WO2005015308A2 - Procede de fabrication de masques lithographiques haute resolution au moyen de reserves sensibles aux electrons evaporees ou assistees par plasma a inversion de l'image de placage - Google Patents

Procede de fabrication de masques lithographiques haute resolution au moyen de reserves sensibles aux electrons evaporees ou assistees par plasma a inversion de l'image de placage Download PDF

Info

Publication number
WO2005015308A2
WO2005015308A2 PCT/CA2004/001010 CA2004001010W WO2005015308A2 WO 2005015308 A2 WO2005015308 A2 WO 2005015308A2 CA 2004001010 W CA2004001010 W CA 2004001010W WO 2005015308 A2 WO2005015308 A2 WO 2005015308A2
Authority
WO
WIPO (PCT)
Prior art keywords
mask
high resolution
layer
fabricating
resolution lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CA2004/001010
Other languages
English (en)
Other versions
WO2005015308B1 (fr
WO2005015308A3 (fr
Inventor
Eric Lavallee
Jacques Beauvais
Dominique Drouin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quantiscript Inc
Original Assignee
Quantiscript Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quantiscript Inc filed Critical Quantiscript Inc
Publication of WO2005015308A2 publication Critical patent/WO2005015308A2/fr
Publication of WO2005015308A3 publication Critical patent/WO2005015308A3/fr
Publication of WO2005015308B1 publication Critical patent/WO2005015308B1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks

Definitions

  • the present invention relates to the field of fabricating high resolution lithography masks.
  • PXL proximity X-ray lithography
  • a mask is placed in close proximity (10 to 50 ⁇ m) to the exposed wafer. X-rays are projected through the mask to pattern the X-ray sensitive resist coating the semiconductor wafer.
  • the mask is made of a transparent membrane (mostly 2 ⁇ m thick silicon carbide or diamond) on which thick absorber structures are patterned (300 to 500 nm thickness of tantalum (Ta) or tungsten (W) alloys).
  • Ta tantalum
  • W tungsten
  • a major advantage of PXL lithography is the depth of focus of X-rays, which makes it possible to pattern extremely thick resists. This also makes it ideal to pattern via-holes for integrated circuits and high frequency transistor gates.
  • PXL technology has demonstrated the potential for 50 nm resolutions in limited throughput conditions [Kise et al, 2002; Tsuboi et al., 2001], the resolution of PXL technology being mainly limited by the resolution of the masks.
  • An important issue for this technology is to obtain masks with high resolution patterns and high contrast. Since there is no scale reduction factor between the mask and the projected pattern, the critical dimensions on the masks correspond to the critical dimensions of the circuit.
  • an electron beam lithography system can be used to pattern an electron sensitive resist layer, which is deposited on top of a blank mask.
  • the patterns from the resist are then transferred using directional plasma etching such as reactive ion etching to an underlying layer of absorber, typically 300 to 500 nm thickness of tantalum (Ta) or tungsten (W) alloys.
  • an underlying layer of absorber typically 300 to 500 nm thickness of tantalum (Ta) or tungsten (W) alloys.
  • the electron sensitive resist was in liquid form and needed to be spin coated on top of the absorber layer. Spin coating is performed by depositing the resist in liquid form on top of the blank mask, then rotating the mask at several thousands of revolution per minutes.
  • the mask being typically made from a 2 ⁇ m thick silicon carbide or diamond substrate, this process induces deformation of the membranes, which in turn causes image placement errors, i.e. errors in the position of the absorber patterns.
  • LEEPL low energy electron proximity lithography
  • the mask is made of an absorber membrane with a thickness ranging from 200 nm to 500 nm [Nakasuji, M., 2001 ; Shimazu et al., 2002, Yoshizawa, M., 2002]. Holes are patterned in the membranes, which electrons can traverse unhindered.
  • the membrane is brought in the vicinity of the silicon wafer (25 to 100 ⁇ m distance) and low energy electrons (typically 2 keV) are projected through the holes to form patterns on the sensitive coating of the semiconductor wafer.
  • LEEPL has demonstrated resolutions up to 65 nm in non-production environment, the resolution of LEEPL technology being mainly limited by the resolution of the mask.
  • an electron beam lithography system can be used to pattern an electron sensitive resist layer which is deposited on top of a thin membrane (thinner than 2 ⁇ m of silicon, silicon carbide or diamond).
  • the patterns from the resist are then transferred using directional plasma etching such as reactive ion etching, to form patterned holes in the membranes.
  • the electron sensitive resist was spin coated on top of the membrane. Spin coating is performed in similar conditions than for the X-ray mask fabrication. The membrane being in most cases even thinner than 2 ⁇ m, this process causes image placement errors.
  • the membrane is sagging due to gravity. During the projection of the mask on the semiconductor wafer, the membrane is inverted, causing reverse sagging.
  • nanoimprint lithography a mold fabricated to nanometer resolution is brought in direct contact with a soft material, which is typically made of a polymer layer on top of a semiconductor wafer. By applying pressure and some heating to the mold, it is possible to transfer the patterns from the mold to the soft material with nanometer scale resolution. Resolutions better than 50 nm have been demonstrated with this technique using molds with limited area. In this case also, the resolution of the nanoimprint technology is limited by the resolution of the mask.
  • an electron beam lithography system is used to pattern an electron sensitive resist layer which is deposited on top of a hard substrate.
  • This substrate is often quartz or silicon nitride on a silicon wafer.
  • the patterns from the resist are then transferred to the substrate using directional plasma etching such as reactive ion etching, to obtain an embossed mold.
  • the electron sensitive resist was spin coated on top of hard substrate.
  • uniform spreading of the membrane cannot be achieved by spin coating on non planar surfaces. This makes it impossible to fabricate non planar molds.
  • nanoimprint molds with deep non-contact regions and limited patterned regions.
  • a method for fabricating a high resolution lithography mask comprising: providing a blank mask; coating the blank mask with a conductive layer; depositing a negative electron-sensitive resist layer on the conductive layer; applying an electron beam irradiation to the negative electron-sensitive resist layer to form patterns of non-soluble resist; dissolving the negative electron-sensitive resist layer to leave on the conductive layer only the patterns of non-soluble resist; plating an etch-resistant material on the conductive layer to invert the patterns; and conducting a directional etch through the patterns not protected by the plated etch-resistant material to transfer said patterns into the blank mask.
  • the method according to the present invention is capable of, in particular but not exclusively: - fabricating masks for X-ray lithography and masks for electron projection lithography with achievable resolutions below 50 nm; and
  • Figure 1a is a side elevational view of a multi-layer substrate on which a metal seed layer and a negative electron sensitive resist layer have been deposited
  • Figure 1 b is a side elevational view of the multi-layer substrate, the metal seed layer and the resist layer from Figure 1 a showing the formation of a polymer structure from the resist layer by means of a controlled focused or shaped electron beam
  • Figure 1c is a side elevational view of the multi-layer substrate and metal seed layer from Figure 1a on which the non-reacted portion of the resist layer has been removed to leave only the polymer structure on the substrate;
  • Figure 1d is a side elevational view of the multi-layer substrate and metal seed layer from Figure 1a, on which a metal layer is electro-plated on top of the metal seed layer, except in areas protected by the polymer structure; and
  • Figure 1e is a side elevational view of the multi-layer substrate from Figure 1a, on which the polymer structure has been removed and trenches have been etched by directional plasma etching.
  • Appended Figures 1a, 1b, 1c and 1d illustrate the various steps of a non restrictive illustrative embodiment of the method according to the present invention, for fabricating etched structures 7 (Figure 1e) on a high resolution lithography mask 3.
  • This method uses a controlled electron beam 4 ( Figure 1 b) to form polymer 5 from a layer of negative electron-sensitive resist 1.
  • the illustrative embodiment of this method also uses plating to obtain an inverted pattern layer 6 ( Figure 1d).
  • the non-restrictive illustrative embodiment of this method further uses directional etching to transfer the patterns from the plated layer 6 to the substrate 3 as etched structures 7 ( Figure 1e).
  • non-restrictive illustrative embodiment of the method according to the invention for fabricating a high resolution lithography mask using a negative electron-sensitive resist layer, an inversion plating procedure and a directional etch to form the patterned structures 7 on a mask
  • Figure 1a A seed layer of metal 2 and a layer of negative electron-sensitive resist
  • the substrate 3 is a blank mask for X-ray lithography, low energy electron proximity projection lithography, electron projection lithography or nanoimprint lithography.
  • the substrate 3 is a multi-layer substrate usually including an X-ray transparent membrane formed, for example, of a 2 ⁇ m thick diamond or SiC membrane, on which a 300 nm to 500 nm thick layer of X-ray absorbing material is deposited by sputtering.
  • the X-ray absorbing material comprises, for example, a tantalum (Ta) compound such as a compound of tantalum and boron (TaB).
  • Ta tantalum
  • TaB tantalum
  • the X-ray transparent membrane can be held flat and rigid through a mono-crystalline silicon ring located on the same side of the membrane as the layer of X-ray absorbing material.
  • the substrate 3 is usually a 200 nm to 500 nm thick Si, SiC or diamond membrane.
  • the substrate 3 is, for example, selected from the group consisting of a quartz plate, a silicon (Si) wafer with or without a layer of Si 3 N 4 on top, a glass plate, and a glass cylinder.
  • the metal seed layer 2 is advantageously a highly conductive metal layer. It is deposited on the top face of the substrate 3 for example by evaporation or sputtering. For example, a typical deposition method is evaporation using a Joule effect evaporator, under a 10 "7 torr vacuum, to deposit a 50 nm thick layer of silver (Ag). Aluminum (Al) could also be used to form the metal seed layer 2.
  • the thickness of the metal seed layer 2 is located between 5 nm and 100 nm.
  • a negative electron-sensitive resist layer 1 is deposited on the top face of this metal seed layer 2.
  • a typical resist deposition consists of evaporating a 30 nm thick sterol layer by organic Joule effect evaporation, at a controlled temperature of 130°C to 145°C, with a 10 '7 torr pre-deposition vacuum (see Figure 1a).
  • a plasma-assisted deposition of fluoropolymer could also be used for depositing the negative electron-sensitive resist layer 1.
  • the negative electron-sensitive resist layer can be selected from the group consisting of: a sterol layer deposited by evaporation [Lavallee,
  • Figure 1b The layer of negative electron sensitive resist 1 is polymerized by applying an electron beam 4 to the layer 1 to locally break chemical bonds in the molecules, creating free radicals to form bonds between the molecules, thus forming patterned structures of non-soluble polymer 5.
  • the negative electron-sensitive resist is cross-linked at the molecular level to make it less soluble.
  • the electron beam 4 is either focused through a series of electromagnetic lenses or electrostatic lenses in order to achieve a minimal beam size on the surface of the layer 1 , or shaped by projection through a stencil to project this shape on the surface of the resist layer.
  • the electron beam is also displaced, for example under the control of a computer, to expose a desired pattern to be given by the completed mask.
  • typical electron-beam lithography parameters with a sterol layer as the negative electron sensitive resist can use a 3 keV focused gaussian electron beam, with a 2 nA current, and with electron doses for the exposed areas of 200 ⁇ C/cm 2 .
  • a 25 keV or 50 keV focused electron beam can be used, with currents up to 20 nA, to pattern the resist.
  • a low energy electron proximity projection lithography (LEEPL) system can be used to bombard the blank mask with 2 keV electrons at a dose of 200 ⁇ C/cm 2 through a stencil opening in a membrane, thus transferring the patterns from the stencil opening to the blank mask (see Figure 1b).
  • the dose is between 20 mC/cm 2 and 400 mC/cm 2 at an energy level between 1 keV and 100 keV.
  • the sample of Figure 1b is immersed into a solvent solution (development solution) that is able to dissolve the negative electron-sensitive resist layer 1 , but not the etch- resistant polymer 5.
  • a solvent solution that is able to dissolve the negative electron-sensitive resist layer 1 , but not the etch- resistant polymer 5.
  • the wet solvent solution is typically a mixture of propanediol and another stronger solvent (see Figure 1c).
  • the bland mask is then rinsed in de-ionized water in order to remove dust particles or residues from the development solution. For that purpose, the blank mask is fully immersed in de-ionized water.
  • the wet development solution cannot be brought into direct contact with the negative electron-sensitive resist layer only through full immersion of the blank mask in the wet development solution but also by spraying the wet development solution on the resist layer 1 while the blank mask rotates.
  • Oxygen plasma can also be used to remove the negative electron- sensitive resist layer 1 except the etch-resistant polymer 5.
  • FIG. 1d The top face metal seed layer 2 of Figure 1c is electro-plated, using an alternating current between a metal electrode and the mask, both immersed in a wet plating solution, for example a wet nickel plating solution of nickel sulphamate or a wet copper plating solution.
  • a wet plating solution for example a wet nickel plating solution of nickel sulphamate or a wet copper plating solution.
  • the reverse cycle of the current is adjusted in time duration and in voltage amplitude to remove the top portion of the metal deposited in the forward biasing cycle, thus reducing the grain size of the plated metallic layer 6.
  • Plating is done by cycling a forward (plating) bias at a voltage superior or equal to the threshold plating voltage, with a reverse (removing) bias at a voltage which is larger than the forward bias by a factor of 3/2.
  • square shaped electrical waveforms are used to produce this cycling, at a frequency in the range of 20 kHz to 100 kHz, with the reverse cycle shorter in time duration than the forward cycle.
  • the reverse bias cycles are adjusted in time duration and in voltage amplitude to remove during the reverse bias cycles the top portion of the material deposited during the forward bias cycles, in order to obtain a smooth uniform plated layer of etch-resistant material.
  • Higher frequency is preferable as it limits the time the atoms, for example nickel atoms, plated in the forward cycle have to relax to a stable state, making it more difficult to remove in the reverse bias cycle (see Figure 1d).
  • Figure 1e The sample of Figure 1d is inserted in a directional plasma etch system, in order to remove first the etch-resistant polymer 5, and to etch trenches such as 7 in the metal seed layer 2 and the substrate 3.
  • the electroplated metallic layer 6 is etch-resistant to the selected etching gases, thus resulting in patterned trenches 7 in the multi-layer mask.
  • a reactive ion etching system can be used for this purpose, using an initial O 2 gas followed by a mixture of CH 4 and SF 6 .
  • the pressure of gas in the chamber is of the order of 50 to 80 millitorr.
  • the ratio of CH 4 over SF 6 is adjusted in order to control the angle of the sides of the structures formed by the pattern transferred to the underlying layers.
  • the proportion of gases is CH 4 :SF 6 2:1.
  • the etch time is approximately 60 minutes.
  • Vertical pattern transfer from the Ni etch mask to the underlying TaB layer is then possible. Such vertical transfer is generally required by high resolution mask fabrication to avoid blurring during the exposure of the mask.
  • the substrate 3 is usually placed in direct contact on a controlled temperature plate (not shown). This plate cools the substrate 3 during the etching process, in order to avoid distortion of the said substrate due to heating by the plasma bombardment (see Figure 1e).
  • the directional etch is selected from the group consisting of: reactive ion etching, electron cyclotron resonance reactive ion etching and inductively coupled plasma etching;
  • the directional plasma etch can be created using gas selected from the group consisting of: O 2 , CF 4 , SF 6 , CH , or a combination thereof;
  • the gas is selected so as to create a plasma gas capable of etching the patterns 5 of non-soluble resist, the metal layer 2, and at least one layer of the substrate 3, except in areas protected by the plated etch-resistant layer 6.
  • Non-restrictive illustrative example In this example, the non-restrictive, illustrative embodiment of the method according to the present invention will be applied to the production of masks for X-ray lithography.
  • the X-ray lithography blank mask in this example consists of a multilayer substrate of diamond membrane, held flat and rigid by a silicon mono- crystalline ring, the membrane being coated by a 300 nm thick TaB layer.
  • the silicon ring applies a moderate tensile stress to the membrane, preventing it from curving.
  • the TaB layer is deposited by sputter coating in controlled temperature conditions, so the membrane remains flat with the TaB layer on top.
  • the TaB layer is coated on the same side of the membrane that stands the silicon ring, i.e.
  • the top face of the TaB layer of the blank mask is subsequently first coated by a 50 nm thick silver layer, using deposition by Joule effect evaporation.
  • the initial pressure during the evaporation is of the order of 10 '7 torr.
  • the silver layer is evaporated at the minimal temperature for silver evaporation in order to keep the grain size of this layer inferior to 20 nm.
  • a sterol negative electron sensitive layer (resist layer) is then deposited on top of the silver and TaB layers, also by Joule effect evaporation. This resist layer is 30 nm thick.
  • Electron beam lithography is performed to pattern this sterol layer, using a low energy electron beam lithography system.
  • a 3 keV electron energy is chosen in order to achieve polymerization of the entire thickness of the resist layer during exposure, while keeping a minimal ratio of backscattered electrons (electrons that reach the TaB layer and are backscattered to the resist layer). Backscattered electrons in such a case would cause deformation of the patterns from electron beam lithography, since such electrons can cause reaction of the resist material in unwanted areas.
  • the electron beam causes the molecules of the sterol layer to cross-link, making it non-soluble.
  • the electron beam is displaced using a computer-controlled pattern generator.
  • patterns correspond to the desired patterns for the completed mask.
  • Such patterns can be for example via-holes or gate levels for integrated circuits.
  • the mask is immersed in a standard nickel plating solution (such as used for plating in the disk or protective coating industries), with a nickel electrode.
  • An alternating current is used for plating.
  • the current biasing in the forward direction has to be greater than in the reverse direction, in order for a nickel layer to be plated on the surface.
  • the reverse biasing is adjusted to be shorter in time period but higher in voltage amplitude compared to the forward biasing conditions.
  • nickel is deposited on top of the silver seed layer, and during the reverse biasing cycle, roughness of the nickel layer is reduced by removing protruding nickel atoms from the surface.
  • Plating does not occur in the regions where there are patterned structures of sterol resist, the resist not being conductive. The plating therefore covers the silver layer, producing a nickel layer with inverted patterns from the sterol resist structures.
  • the sample is removed from the plating solution, dried and placed in a reactive ion etching plasma chamber.
  • Vacuum is obtained in the reactive ion etching chamber by using a pumping system in order to eliminate contamination from gases present in the atmosphere from the process.
  • An oxygen (O 2 ) plasma at 100W is used for 2 minutes to remove the non-soluble resist structures formed by resist exposure to the electron beam.
  • a SF 6 :CH plasma, at 80W for 100 minutes is then used to etch through the silver layer and the TaB layer, except in areas protected by the plated nickel layer. These regions become transparent to X-rays, while the rest of the mask remains absorbent to X-rays.
  • masks for electron projection lithography can be fabricated, by substituting the TaB layer by the appropriate layer absorption for the given technology.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un procédé permettant de fabriquer un masque lithographique haute résolution. Ce procédé consiste à utiliser un masque vierge, à recouvrir le masque vierge d'une couche conductrice, à déposer une couche de réserve négative sensible aux électrons sur la couche conductrice, à appliquer un rayonnement de faisceaux électroniques sur la couche de réserve de manière à former des motifs de réserve non soluble, à dissoudre la couche de réserve de manière à ne laisser que les motifs de réserve non soluble, à plaquer un matériau résistant à la gravure sur la couche conductrice de manière à inverser les motifs, puis à effectuer une gravure directionnelle à travers les motifs non protégés par le matériau résistant à la gravure plaqué afin de transférer ces motifs sur le masque vierge.
PCT/CA2004/001010 2003-08-08 2004-07-08 Procede de fabrication de masques lithographiques haute resolution au moyen de reserves sensibles aux electrons evaporees ou assistees par plasma a inversion de l'image de placage Ceased WO2005015308A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49336803P 2003-08-08 2003-08-08
US60/493,368 2003-08-08

Publications (3)

Publication Number Publication Date
WO2005015308A2 true WO2005015308A2 (fr) 2005-02-17
WO2005015308A3 WO2005015308A3 (fr) 2005-07-28
WO2005015308B1 WO2005015308B1 (fr) 2005-11-10

Family

ID=34135238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2004/001010 Ceased WO2005015308A2 (fr) 2003-08-08 2004-07-08 Procede de fabrication de masques lithographiques haute resolution au moyen de reserves sensibles aux electrons evaporees ou assistees par plasma a inversion de l'image de placage

Country Status (1)

Country Link
WO (1) WO2005015308A2 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100435285C (zh) * 2006-02-09 2008-11-19 中国科学院微电子研究所 一种用负性电子抗蚀剂制备纳米电极的方法
CN103436853A (zh) * 2013-09-04 2013-12-11 苏州锦元纳米科技有限公司 掺氟类金刚石薄膜、其制备方法及包含该薄膜的压印模板
WO2014014843A1 (fr) * 2012-07-16 2014-01-23 Seagate Technology Llc Analyse de caractéristiques de motif
US20160041471A1 (en) * 2014-08-07 2016-02-11 International Business Machines Corporation Acidified conductive water for developer residue removal
WO2019200049A1 (fr) * 2018-04-11 2019-10-17 Wisys Technology Foundation, Inc. Tamis macromoléculaires faits à partir de membranes semi-conductrices et servant à la séparation et à la détection basées sur la forme
RU205508U1 (ru) * 2021-03-11 2021-07-19 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Маска для взрывной фотолитографии

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176817A (en) * 1981-04-24 1982-10-30 Citizen Watch Co Ltd Manufacture of flat type crystal oscillator
WO1996007954A1 (fr) * 1994-09-09 1996-03-14 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Microstructures et procede de fabrication de microstructures
KR0165413B1 (ko) * 1995-07-18 1999-02-01 이대원 패턴 에칭 방법
JPH0992602A (ja) * 1995-09-26 1997-04-04 Canon Inc マスク構造体及びその製造方法
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
JPH10142438A (ja) * 1996-11-15 1998-05-29 Nippon Telegr & Teleph Corp <Ntt> 高分子光導波路の製造方法
KR20020031799A (ko) * 2000-10-24 2002-05-03 박종섭 반도체장치의 퓨즈 및 배선 형성방법
CA2377081A1 (fr) * 2002-03-15 2003-09-15 Quantiscript Inc. Methode de production d'une structure de polymere resistant a la gravure au moyen de la lithographie par faisceau electronique

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100435285C (zh) * 2006-02-09 2008-11-19 中国科学院微电子研究所 一种用负性电子抗蚀剂制备纳米电极的方法
WO2014014843A1 (fr) * 2012-07-16 2014-01-23 Seagate Technology Llc Analyse de caractéristiques de motif
CN104470701A (zh) * 2012-07-16 2015-03-25 希捷科技有限公司 图案特征的分析
CN104470701B (zh) * 2012-07-16 2016-09-28 希捷科技有限公司 图案特征的分析
CN103436853A (zh) * 2013-09-04 2013-12-11 苏州锦元纳米科技有限公司 掺氟类金刚石薄膜、其制备方法及包含该薄膜的压印模板
US20160041471A1 (en) * 2014-08-07 2016-02-11 International Business Machines Corporation Acidified conductive water for developer residue removal
WO2019200049A1 (fr) * 2018-04-11 2019-10-17 Wisys Technology Foundation, Inc. Tamis macromoléculaires faits à partir de membranes semi-conductrices et servant à la séparation et à la détection basées sur la forme
US12002674B2 (en) 2018-04-11 2024-06-04 Wisys Technology Foundation, Inc. Macromolecular sieves from semiconductor membranes for shape-based separation and sensing
RU205508U1 (ru) * 2021-03-11 2021-07-19 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Маска для взрывной фотолитографии

Also Published As

Publication number Publication date
WO2005015308B1 (fr) 2005-11-10
WO2005015308A3 (fr) 2005-07-28

Similar Documents

Publication Publication Date Title
US8030620B2 (en) System and method for nano-pantography
US6893966B2 (en) Method of patterning the surface of an article using positive microcontact printing
TWI557518B (zh) 直流電流重疊凍結
WO2004099875A2 (fr) Mordançage de couches de chrome sur des photomasques au moyen du plasma a densite elevee et d&#39;une polarisation rf basse frequence
KR20010075196A (ko) 무저항 전자빔 평판인쇄를 이용한 서브-미크론에치-저항성 금속/반도체 구조체의 제조방법
CN115440585A (zh) 金属纳米结构及其离子束刻蚀加工方法
US7985530B2 (en) Etch-enhanced technique for lift-off patterning
KR19980702064A (ko) 포토리소그래픽 구조물 생성 방법
JP2002303992A (ja) 微小構造の製造方法
Howard et al. Nanometer-scale fabrication techniques
WO2005015308A2 (fr) Procede de fabrication de masques lithographiques haute resolution au moyen de reserves sensibles aux electrons evaporees ou assistees par plasma a inversion de l&#39;image de placage
JP2010274650A (ja) 複製技術のための金属製スタンプの製造
US6514877B1 (en) Method using sub-micron silicide structures formed by direct-write electron beam lithography for fabricating masks for extreme ultra-violet and deep ultra-violet lithography
CN118244575A (zh) 一种提高纳米压印胶粘附性的纳米压印子版基片及其制备方法和纳米压印方法
US6777167B2 (en) Method of producing an etch-resistant polymer structure using electron beam lithography
CN119356042B (zh) 基于聚焦离子束-扫描电子显微镜双束系统的纳米光刻方法
KR101226076B1 (ko) 나노자성체의 2차원 배열구조 제조방법
Cui Nanoscale Pattern Transfer
Sheu et al. Fabrication of intermediate mask for deep x-ray lithography
WO2025210016A1 (fr) Procédés de formation de motifs pour gravure chimique assistée par catalyseur à rapport de forme élevé
Cui Nanoscale Pattern Transfer by Deposition
EP1485757B1 (fr) Procede de production de structure polymere resistant a la gravure utilisant la lithographie par faisceau d&#39;electrons
Lavallee et al. Fabrication of masks for DUV and EUV lithography using silicide direct-write electron beam lithography process
JP3076837B2 (ja) 微細加工方法
KR100238237B1 (ko) 전자빔 셀 투영 리소그래피용 마스크 및 그 제조방법

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
B Later publication of amended claims

Effective date: 20050729

122 Ep: pct application non-entry in european phase