WO2005017908A1 - Memoire de stockage d'informations - Google Patents

Memoire de stockage d'informations Download PDF

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Publication number
WO2005017908A1
WO2005017908A1 PCT/US2003/024550 US0324550W WO2005017908A1 WO 2005017908 A1 WO2005017908 A1 WO 2005017908A1 US 0324550 W US0324550 W US 0324550W WO 2005017908 A1 WO2005017908 A1 WO 2005017908A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
electrodes
information
memory apparatus
electrochemical modification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/024550
Other languages
English (en)
Inventor
George Radominski
Timothy L. Weber
Steven D. Leith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Development Co LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co LP filed Critical Hewlett Packard Development Co LP
Priority to PCT/US2003/024550 priority Critical patent/WO2005017908A1/fr
Priority to AU2003254322A priority patent/AU2003254322A1/en
Publication of WO2005017908A1 publication Critical patent/WO2005017908A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits

Definitions

  • the invention is in the microelectronics and memory fields.
  • the invention particularly concerns programmable memories for storing data, as well as methods for storing data.
  • Memories such as programmable memories are used in the electronic and computer arts to store information in the form of binary data consisting of bits. Examples of memories include magnetic and optical media organized into discrete sections. Data is stored in these memory media by inducing a discernable change in a selected section, with the changed or unchanged state of the section indicative of a binary bit.
  • demands on memory apparatuses have steadily increased. For example, the amount of data desired to be stored on devices has substantially increased.
  • An embodiment of a method of the invention is directed to causing an electrical current to flow through an electrolyte solution separating a first electrode from a second electrode to cause an electrochemical modification of the second electrode to thereby store the information, and then reading the information by detecting the electrochemical modification with a sensor.
  • FIG. 1 is a cross section of a portion of a preferred embodiment memory apparatus of the invention
  • FIG. 2 is a perspective of a portion of the preferred embodiment memory apparatus of FIG. 1
  • FIG. 3 is a top plan view of a portion of the preferred embodiment memory apparatus of FIG. 1
  • FIG. 4 is a cross section of a second exemplary preferred embodiment memory apparatus of the invention
  • FIG. 5 is a flow chart of a preferred embodiment method of the invention.
  • FIG. 1 is a cross section of a portion of a preferred memory apparatus of the invention, shown generally at 10.
  • the memory apparatus 10 has a plurality of first electrodes 12 that are spatially arranged with respect to one another and are individually addressable.
  • a second electrode 14 is separated from the first electrodes 12 by a liquid electrolyte solution 16. Walls or other structure may be provided to create a chamber or other enclosure for containing the electrodes 12 and 14 and the electrolyte 16.
  • An individually addressable and generally circular sensor electrode 18 surrounds each of the first electrodes 12, with the sensor electrode 18 supported on a dielectric material 20.
  • the spatial configuration of a sensor electrode 18 and a first electrode 12 is further illustrated in the perspective view of FIG. 2 showing one generally circular sensor electrode 18 surrounding the tip of a first electrode 12.
  • the first electrodes 12, second electrode 14, and sensor electrodes 18 all preferably comprise noble electrodes.
  • the preferred memory apparatus of FIG. 1 further comprises a controller
  • the controller 22 may facilitate electrically linking any one of the first electrodes 12 or the sensor electrodes 18 to the second electrode 14 in order to cause an electrical current to flow through the electrolyte 16 between a selected first electrode 12 or sensor electrode 18 and the second electrode 14.
  • the controller 22 may comprise, for example, a chip or a microprocessor.
  • the memory apparatus 10 may be used to store, read, and erase information.
  • the controller 22 causes an electric current to flow between one or more selected first electrodes 12 and the second electrode 14, the surface of the second electrode 14 is electrochemically modified.
  • an electrochemically active material 26 is electrodeposited from the electrolyte on the second electrode 14.
  • information may be coded in a binary matter. That is, each first electrode 12 and corresponding location on the second electrode 14 may be thought of as a bit, and the presence or absence of an electrochemically active material 26 in that location corresponding to a high or low state for the bit (i.e., a 1 or O).
  • the first electrodes 12 preferably have the general shape of a cone so as to more precisely direct the location of deposited solid on the second electrode 14. Also, the dielectric 20 supporting the sensor electrode 18 is provided to help minimize "cross talk" between the individual first electrodes 12.
  • the electrochemically active material 26 preferably comprises a metal deposit.
  • the electrolyte solution may contain ions of one or more of many materials capable of being electrodeposited, with metal ions comprising preferred examples.
  • metals such as Zn, Co, Ni, Fe, Cu, Al, Ag, Cr, Mn, V, Ti, Sn, In, Rh, Pd, Cd and/or Mo may be useful for practice of invention embodiments.
  • switching speed is proportional to the square of the number of electrons transferred in the reaction, materials such as Ag that require the transfer of only one electron are preferred.
  • the switching speed with a Ag solution is 4 times as fast as that of a solution using, for example, Al, Co, Cu, Fe, Ni, Cr or Zn (all of which require two electrons).
  • a desired concentration of ion in the electrolyte solution, the magnitude of the electrical current required to electrodeposit the solid, and other factors concerning the electrodeposition may be calculated using well known electrochemical relationships, such as, for example, Faraday's Law, Fick's Second Law of diffusion, and the Debye-Huckel or Guoy-Chapman model of double layer charging.
  • an aqueous solution of Ag+ ions (as silver cyanide, AgCN) with a concentration of between about 0.1 and about 1.5 mol/l, and a temperature in the range of about 20 to about 75°C is believed to be useful with practice of the invention.
  • the electrolyte may also contain additives such as potassium cyanide (KCN) in the concentration range of about 0.5 to about 2.5 mol/l, potassium carbonate (K 2 CO 3 ) in the concentration range of about 0.1 to about 1.0 mol/l, potassium nitrate (KNO 3 ) in the concentration range of about 0.1 to about 1.0 mol/I and potassium hydroxide (KOH) in the concentration range of about 0.05 to about 0.5 mol/l.
  • KCN potassium cyanide
  • K 2 CO 3 potassium carbonate
  • KNO 3 potassium nitrate
  • KOH potassium hydroxide
  • a number of organic brighteners in ppm concentrations may also be present.
  • other invention embodiments may comprise deposits of other electrochemically active materials.
  • a magnetic material such as NiFe could be electrodeposited and detected through measurement of magnetic field.
  • some invention embodiments may not deposit a material at all, but instead may store information by causing an electrochemical modification on one of the selected first or second electrodes. For example, by causing a current to flow through the electrolyte, the oxidation state of the surface of one of the electrodes could be modified.
  • the controller 22 may cause the memory apparatus 10 to read information by causing the sensor electrodes 18 to sense the electrochemical modification to the second electrode 14.
  • the sensor electrode 18 may measure an electrical property such as resistance between it and the second electrode 14. Presence of the metal deposit 26 will result in a lower resistance between the sensing electrode 18 and the second electrode 14 since the metal deposit 26 has a higher conductivity than the electrolyte 16.
  • the generally circular shape of the sensor electrode 18 is advantageous for focusing of an electric field proximate the location of the deposit 26.
  • a sensor may measure a magnetic field strength to detect the presence of a deposited magnetic material. Presence of an electrochemically active material such as the metal deposit 26 in a particular region of the second electrode 14 may be interpreted as a change of state in a particular bit. That is, for each portion of the second electrode 14 that corresponds to one of the plurality of first electrodes 12, a binary "high” state may be indicated by the presence of a metal deposit 26, and a binary "low” state indicated by the absence of a metal deposit 26.
  • an electrochemically active deposit may store more than a 1 or 0 state, and may, for instance, store a 1 , 2, 3 or 4 state, a byte, or other amount of information.
  • x, y, and z dimensions of the deposit 26 could be further used to store additional bits of information.
  • different deposit materials in combination could be used to store additional bits of information.
  • the controller 22 may also cause the memory apparatus 10 to erase information through change of a particular bit from a high to a low state. In particular, the controller 22 may cause an electric current to flow between one or more a selected of the sensing electrodes 18 and the second electrode 14 to cause a selected metal deposit 26 to go back into solution.
  • the controller 22 may cause one or more selected sensing electrodes 18 to function as anodes so as to ionize the metal deposit 26.
  • Other means for erasing information could be provided.
  • erasing information could be accomplished by causing a current to flow between a first electrode 12 and the second electrode 14 (i.e., reverse the polarity of the writing current). It is preferred to use a separate electrode, such as a sensor electrode 18, however, so as to not foul the tip of the first electrode 12. It will be appreciated that a spatial arrangement of the plurality of first electrodes 12, sensor electrodes 18, and sections of the second electrode 14 may allow for additional coding of information.
  • the plurality of first electrodes 12 and sensor electrodes 18 may be spatially arranged in a plurality of rows and columns, as generally illustrated in the top plan view of FIG. 3 showing a plurality of first electrodes 12 and sensor electrodes 18.
  • the numbers of first electrodes 12 and sensor electrodes 18 shown in FIGS. 1 and 3 are for illustration purposes only, and that in practice it may be desirable to practice the invention using great multiplicities of electrodes to achieve high memory storage capacities.
  • the first electrodes 12, second electrode 14, and sensor electrodes 18 may be provided on a micro scale so as to accomplish a desirably high density of memory with a memory apparatus of the invention.
  • first electrodes 12 having a base width of between about 250 and about 500 nm and a height of approximately the same dimensions could be used. Spacing between the first electrodes 12 and the second electrode 14 is preferably about 1 micron or less.
  • Example preferred dimensions for the generally ring shaped sensor electrode 18 include an inside diameter about the same as or slightly larger than the base width of the first electrode 12, a height of about 100 nm or less, and a width of about 50 to about 100 nm. Using electrodes of this scale, a memory density of the order of about 4 bits per micron may be achieved. The operational speed of the memory apparatus 10 is believed to generally be limited by ionic diffusion in the electrolyte 16.
  • the actual current realized depends on how readily the current is carried between the electrodes 12 and 14.
  • the flow of current through the electrolyte 16, and thus information write/erase speeds depends on a number of factors including chemical species, size, mobility, charge, concentration, electrolyte temperature, electrode 12 and 14 spacing, minimum deposit thickness, and the like.
  • the thickness of the metal deposit 26 will vary with the time of current flow. It is believed that a deposit thickness of between about 5 nm and about 100 nm will be useful with practice of the preferred apparatus of the invention.
  • the record and erase speeds may each be on the order of 10 millisecond for a typical nickel salt electrolyte at 50°C.
  • the controlling variables could be manipulated to improve the speed, with a maximum record speed of the order of about 1 millisecond believed to be achievable.
  • Sensing speeds are generally much faster than those of the write/erase functions. Sensing resistivity for example could be performed at speeds greater than 1 millisecond. Accordingly, it is estimated that a complete write/read/erase cycle for information could likely be achieved using the preferred apparatus of the invention on the order of between about 2 and about 5 milliseconds.
  • FIG. 4 illustrates an additional exemplary preferred memory apparatus 110 of the invention that is useful to further increase information storage density. Generally, the apparatus 110 is consistent in most respects with the apparatus 10.
  • a plurality of first electrodes 112 is separated from an opposing second electrode 114 by an electrolyte 116.
  • an electric current flows across the electrolyte to cause an electrochemically active material 126 to deposit on the surface of the second electrode 114.
  • a sensor electrode 118 may be used to detect the presence of the electrochemically active material 126 to thereby read the information, and also to erase the information by causing the electrochemically active material 126 to be ionized back into the electrolyte.
  • a controller 122 and control circuit 124 controls the first electrodes 112 and second electrode 114.
  • the apparatus 110 further comprises a mover 170 attached to the plurality of first electrodes for selectively moving the electrodes in relation to the second electrode 114.
  • a mover control 172 linked to the mover 170 causes the electrodes 112 to move laterally as indicated by the arrow in predetermined distances.
  • movers 170 are generally known.
  • the mover 170 may be a micro-motion motor and carriage mechanism.
  • description of a suitable mover may be found in the commonly assigned and pending U.S. patent application with serial no. 10/157,254 entitled "A Movable Micro- Electromechanical Device,” filed on May 28, 2002.
  • the mover 170 could alternatively or additionally be connected to the second electrode 114. It will still further be appreciated that although FIG. 4 illustrates first electrodes along the X-axis only, they preferably also extend along a Y-axis to form an array of rows and columns, and that movement may likewise occur along the Y-axis.
  • the mover control 172 is preferably connected to the controller 122 and controller circuit 124. Using the mover 170, any one of the plurality of first electrodes 112 may be used to electrochemically modify different discrete portions of the second electrode 114 surface. Preferably, the mover 170 is capable of accurately moving the electrodes 112 very small distances of the order of 100 nm or less.
  • the second electrode surface may have discrete modifications separated by about 100 nm or less. It is believed that with the mover 170 the apparatus 110 may accordingly be capable of storing information at a density of up to about 10 bits per micron.
  • the memory apparatus of the invention may further comprise integrated circuitry.
  • a memory apparatus such as the that shown generally at 10 may be connected to integrated circuitry for use in a handheld electronic device such as a laptop or palmtop computer device, a communications device such as a cellular phone, or the like.
  • Another embodiment of the invention is directed to a method for storing information.
  • FIG. 5 is a flowchart illustrating steps of a preferred embodiment method of the invention for writing, reading, and erasing information from a memory apparatus.
  • the dashed line block 402 includes steps for writing the information.
  • At least one first electrode is selected from a plurality of first electrodes (block 404), and then moved using a mover to a desired position relative to a second electrode (block 405).
  • the dashed line block 408 includes a step of reading the information.
  • the presence of the solid is detected using a sensor (block 410).
  • a sensor Preferably, a plurality of sensors is provided, with one each corresponding to one each of the first electrodes.
  • the sensor preferably detects the presence of the solid by measuring an electrical property such as resistance or magnetic field.
  • the sensor comprises an electrode that substantially surrounds the first electrode.
  • the dashed line block 412 includes steps for erasing the information.
  • the solid may be removed from the second electrode by causing a current to flow between that electrode and the sensor electrode to cause the metal to ionize back into solution (block 414).

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Abstract

La présente invention concerne un dispositif de mémoire (10) qui possède une pluralité de premières électrodes (12) et au moins une seconde électrode (14) séparées par une solution d'électrolyte (16). On peut enregistrer les informations en faisant en sorte qu'un courant électrique s'écoule entre une des premières électrodes sélectionnée (12) et la seconde électrode (14) de façon à déposer un matériau actif de manière électrochimique (26) sur l'une des deux électrodes sélectionnées (12,14). Cette invention concerne aussi un procédé d'enregistrement et de lecture d'informations qui consiste à écrire les informations en faisant en sorte qu'un courant s'écoule entre une première (12) et une seconde électrode (14) à travers une solution d'électrolyte (16) de façon à électrodéposer un matériau (26) et, à lire les informations en captant ce matériau (26) avec un capteur (18).
PCT/US2003/024550 2003-08-06 2003-08-06 Memoire de stockage d'informations Ceased WO2005017908A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/US2003/024550 WO2005017908A1 (fr) 2003-08-06 2003-08-06 Memoire de stockage d'informations
AU2003254322A AU2003254322A1 (en) 2003-08-06 2003-08-06 Memory for storing information

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/024550 WO2005017908A1 (fr) 2003-08-06 2003-08-06 Memoire de stockage d'informations

Publications (1)

Publication Number Publication Date
WO2005017908A1 true WO2005017908A1 (fr) 2005-02-24

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PCT/US2003/024550 Ceased WO2005017908A1 (fr) 2003-08-06 2003-08-06 Memoire de stockage d'informations

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AU (1) AU2003254322A1 (fr)
WO (1) WO2005017908A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172083A (en) * 1962-01-12 1965-03-02 Ibm Electrolytic memory
EP0325056A2 (fr) * 1988-01-22 1989-07-26 International Business Machines Corporation Dispositif de stockage de données
JPH02146128A (ja) * 1988-11-28 1990-06-05 Canon Inc 記録再生装置
JPH0476840A (ja) * 1990-07-18 1992-03-11 Seiko Instr Inc 高密度メモリ作成方法
JPH0628841A (ja) * 1992-07-08 1994-02-04 Makoto Yano 化学反応を利用した記憶素子
EP0871165A2 (fr) * 1991-07-17 1998-10-14 Canon Kabushiki Kaisha Appareil d'enregistrement / de reproduction d'informations ou méthode d'enregistrement / reproduction d'informations sur milieu d'enregistrement d'information au moyen d'une pluralité d'électrodes de sondes

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172083A (en) * 1962-01-12 1965-03-02 Ibm Electrolytic memory
EP0325056A2 (fr) * 1988-01-22 1989-07-26 International Business Machines Corporation Dispositif de stockage de données
JPH02146128A (ja) * 1988-11-28 1990-06-05 Canon Inc 記録再生装置
JPH0476840A (ja) * 1990-07-18 1992-03-11 Seiko Instr Inc 高密度メモリ作成方法
EP0871165A2 (fr) * 1991-07-17 1998-10-14 Canon Kabushiki Kaisha Appareil d'enregistrement / de reproduction d'informations ou méthode d'enregistrement / reproduction d'informations sur milieu d'enregistrement d'information au moyen d'une pluralité d'électrodes de sondes
JPH0628841A (ja) * 1992-07-08 1994-02-04 Makoto Yano 化学反応を利用した記憶素子

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
F.C. GAUDET, E.J. LORENZ AND S.L. PHILLIPS: "Electrochemical Memory", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 9, no. 3, 1 August 1966 (1966-08-01), New York, US, pages 230, XP002265478 *
INTERNATIONAL BUSINESS MACHINES CORPORATION: "Flash memory based on electrolytic plating", RESEARCH DISCLOSURE, KENNETH MASON PUBLICATIONS, HAMPSHIRE, GB, vol. 448, no. 173, August 2001 (2001-08-01), XP007128848, ISSN: 0374-4353 *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 389 (P - 1095) 22 August 1990 (1990-08-22) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 292 (P - 1377) 29 June 1992 (1992-06-29) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 250 (P - 1736) 12 May 1994 (1994-05-12) *

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