WO2008108149A1 - アーク式蒸発源 - Google Patents

アーク式蒸発源 Download PDF

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Publication number
WO2008108149A1
WO2008108149A1 PCT/JP2008/052506 JP2008052506W WO2008108149A1 WO 2008108149 A1 WO2008108149 A1 WO 2008108149A1 JP 2008052506 W JP2008052506 W JP 2008052506W WO 2008108149 A1 WO2008108149 A1 WO 2008108149A1
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
arc
evaporation surface
evaporation source
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052506
Other languages
English (en)
French (fr)
Inventor
Katsuhiro Tsuji
Kazuya Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Riken Corp
Nissin Electric Co Ltd
Original Assignee
Riken Corp
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Riken Corp, Nissin Electric Co Ltd filed Critical Riken Corp
Priority to KR1020097018146A priority Critical patent/KR101685700B1/ko
Priority to EP08711336.1A priority patent/EP2116630B1/en
Priority to CN2008800067593A priority patent/CN101636519B/zh
Priority to US12/529,604 priority patent/US8337682B2/en
Publication of WO2008108149A1 publication Critical patent/WO2008108149A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

【課題】アークスポットがカソード蒸発面以外の部分に移動することを抑制することができるアーク式蒸発源を提供する。 【解決手段】磁場によって制御されるアーク放電によってカソード２２のカソード物質を蒸発させるアーク式蒸発源であって、カソード先端の蒸発面２２ａ付近にカソード中心軸Ａｘに平行な成分が強い磁場Ｍを形成し、かつカソードの外側に配置される磁場形成機構４２と、カソードを支持する支持機構２６と、カソードを冷却する冷却機構６１と、円錐台状をなしその軸方向にカソードを貫通させる貫通孔を有し、かつカソードの蒸発面に向かって先細になるよう配置されるテーパーリング６４とを備え、テーパーリングは強磁性体から成り、使用時にテーパーリングの先端６４ａがカソードの蒸発面と面一又は蒸発面よりやや後退するよう位置する。
PCT/JP2008/052506 2007-03-02 2008-02-15 アーク式蒸発源 Ceased WO2008108149A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097018146A KR101685700B1 (ko) 2007-03-02 2008-02-15 아크식 증발원
EP08711336.1A EP2116630B1 (en) 2007-03-02 2008-02-15 Arc evaporation source
CN2008800067593A CN101636519B (zh) 2007-03-02 2008-02-15 电弧式蒸发源
US12/529,604 US8337682B2 (en) 2007-03-02 2008-02-15 Arc plasma source

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-052550 2007-03-02
JP2007052550A JP5063143B2 (ja) 2007-03-02 2007-03-02 アーク式蒸発源

Publications (1)

Publication Number Publication Date
WO2008108149A1 true WO2008108149A1 (ja) 2008-09-12

Family

ID=39738046

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052506 Ceased WO2008108149A1 (ja) 2007-03-02 2008-02-15 アーク式蒸発源

Country Status (6)

Country Link
US (1) US8337682B2 (ja)
EP (1) EP2116630B1 (ja)
JP (1) JP5063143B2 (ja)
KR (1) KR101685700B1 (ja)
CN (1) CN101636519B (ja)
WO (1) WO2008108149A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8337682B2 (en) 2007-03-02 2012-12-25 Kabushiki Kaisha Riken Arc plasma source

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101824596B (zh) * 2010-03-30 2011-12-14 东莞宏威数码机械有限公司 自动冷却式供电装置
UA101443C2 (ru) * 2011-11-29 2013-03-25 Национальный Научный Центр "Харьковский Физико-Технический Институт" Анодный УЗЕЛ вакуумно-дугового ИСТОЧНИКа катодной ПЛАЗМЫ
JP5946337B2 (ja) * 2012-06-20 2016-07-06 株式会社神戸製鋼所 アーク式蒸発源
US20150371833A1 (en) * 2013-01-22 2015-12-24 Nissin Electric Co., Ltd. Plasma device, carbon thin film manufacturing method and coating method using plasma device
CN110158038B (zh) 2014-03-18 2022-01-18 佳能安内华股份有限公司 沉积装置
WO2017196622A2 (en) 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source
SG10201705059TA (en) 2016-06-24 2018-01-30 Veeco Instr Inc Enhanced cathodic arc source for arc plasma deposition
CN110268502B (zh) * 2017-02-14 2021-08-24 欧瑞康表面处理解决方案股份公司普费菲孔 具有预定阴极材料蚀除的阴极电弧蒸发
JP7495882B2 (ja) 2018-04-13 2024-06-05 ビーコ・インストゥルメンツ・インコーポレイテッド マルチゾーンインジェクターブロックを備える化学蒸着装置
SE542687C2 (en) * 2018-06-27 2020-06-23 Impact Coatings Ab Publ Arc source system for a cathode
US10923311B1 (en) * 2019-11-11 2021-02-16 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Cathode for ion source comprising a tapered sidewall
CN114121574B (zh) * 2021-10-15 2025-02-07 中国电子科技集团公司第十二研究所 一种聚焦极控制电子枪、行波管和设计方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0238463A (ja) 1988-06-20 1990-02-07 Ciba Geigy Ag キナクリドン固体溶液の製造方法
JP2001181829A (ja) 1999-12-28 2001-07-03 Nissin Electric Co Ltd アーク式蒸発源
JP2002030422A (ja) 2000-07-11 2002-01-31 Sumitomo Heavy Ind Ltd 成膜装置
JP2005126737A (ja) * 2003-10-21 2005-05-19 Riken Corp アーク式蒸発源

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0238463U (ja) * 1988-08-30 1990-03-14
JP3287163B2 (ja) * 1995-01-23 2002-05-27 日新電機株式会社 アーク式蒸発源
JP3104701B1 (ja) * 1999-08-18 2000-10-30 日新電機株式会社 アーク式蒸発源
JP5063143B2 (ja) 2007-03-02 2012-10-31 株式会社リケン アーク式蒸発源

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0238463A (ja) 1988-06-20 1990-02-07 Ciba Geigy Ag キナクリドン固体溶液の製造方法
JP2001181829A (ja) 1999-12-28 2001-07-03 Nissin Electric Co Ltd アーク式蒸発源
JP2002030422A (ja) 2000-07-11 2002-01-31 Sumitomo Heavy Ind Ltd 成膜装置
JP2005126737A (ja) * 2003-10-21 2005-05-19 Riken Corp アーク式蒸発源

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2116630A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8337682B2 (en) 2007-03-02 2012-12-25 Kabushiki Kaisha Riken Arc plasma source

Also Published As

Publication number Publication date
KR20090116765A (ko) 2009-11-11
EP2116630B1 (en) 2013-09-25
US20100101947A1 (en) 2010-04-29
CN101636519B (zh) 2011-04-20
CN101636519A (zh) 2010-01-27
KR101685700B1 (ko) 2016-12-12
JP5063143B2 (ja) 2012-10-31
EP2116630A4 (en) 2013-02-20
EP2116630A1 (en) 2009-11-11
US8337682B2 (en) 2012-12-25
JP2008214685A (ja) 2008-09-18

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