WO2009077199A2 - Procédé et installation de traitement ou de purification de blocs de silicium - Google Patents

Procédé et installation de traitement ou de purification de blocs de silicium Download PDF

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Publication number
WO2009077199A2
WO2009077199A2 PCT/EP2008/010871 EP2008010871W WO2009077199A2 WO 2009077199 A2 WO2009077199 A2 WO 2009077199A2 EP 2008010871 W EP2008010871 W EP 2008010871W WO 2009077199 A2 WO2009077199 A2 WO 2009077199A2
Authority
WO
WIPO (PCT)
Prior art keywords
rinsing
blocks
polishing
cleaning
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/010871
Other languages
German (de)
English (en)
Other versions
WO2009077199A3 (fr
Inventor
Heinz Kappler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Publication of WO2009077199A2 publication Critical patent/WO2009077199A2/fr
Anticipated expiration legal-status Critical
Publication of WO2009077199A3 publication Critical patent/WO2009077199A3/fr
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the invention relates to a method for processing or for cleaning of silicon blocks and a system designed for this purpose.
  • ingots are first of all cast from silicon and then divided into individual blocks of the desired edge length. From these blocks, the individual wafers are then produced or sawed out.
  • the problem often arises when sawing, the silicon blocks break or larger cracks that can make the wafer unusable. There is also the problem that cracks caused by sawing can be triggers for further cracks.
  • the invention is based on the object to provide an aforementioned method for processing or cleaning of silicon blocks and a corresponding system with which problems of the prior art can be eliminated and in particular after dividing the silicon ingots into silicon Blocks a treatment of the exposed outsides of the silicon blocks is possible.
  • the silicon blocks for the process are transported on a continuous, horizontal transport path.
  • a first step an alkaline cleaning and rinsing of the silicon blocks takes place, this advantageously taking place one after the other, and particularly advantageously so that rinsing takes place only after the end of the alkaline cleaning.
  • a polishing step is performed in a second step, wherein the polishing etching a corresponding etching solution is brought from all four sides or on all sides of the silicon blocks. After polishing, a further rinse of the silicon blocks takes place. This can happen immediately afterwards, but it does not have to.
  • an intermediate step can be carried out between the first step and the second step.
  • the above-described first step can be designed so that a silicon block is first cleaned alkaline with a cleaning solution and then just, as has been described, is rinsed clean or is rinsed with water. This is advantageously carried out in a treatment module or a first treatment module of a correspondingly constructed system according to the invention for processing or cleaning silicon blocks.
  • liquid is removed from the silicon blocks in each case, which takes place by air circulation or targeted and possibly strong blow-off. As a result, the silicon blocks can even be completely dried, if desired or needed, so that the liquid is completely removed.
  • the etching solution is removed before a subsequent step for cleaning rinsing, so that the liquid is loaded or polluted for cleaning rinsing with less etching solution.
  • etching solution can be largely completely removed, with a cleaning rinsing is still necessary for good cleaning.
  • blowing off can also be provided for removing the etching solution.
  • a so-called KOH process step can take place after the step of cleaning rinsing after polishing.
  • a silicon block is wetted with KOH etching solution, which may for example be 5% to achieve a further advantageous treatment of the outsides of the silicon block.
  • KOH etching solution which may for example be 5% to achieve a further advantageous treatment of the outsides of the silicon block.
  • this KOH solution can be rinsed off again, advantageously again with water. This can be done in a single treatment module of a corresponding plant to save space.
  • the silicon blocks along the transport path are not transported continuously, but run at intervals through the plant.
  • the silicon blocks are moved into a treatment module and there either remain dormant or else are moved back and forth intermittently during the respective step.
  • the length of the system compared to a pure, continuous flow system can be kept lower.
  • a sufficiently long treatment time at high throughput to achieve this, two or even more treatment modules can be provided in parallel or in succession for a higher throughput.
  • the step of rinsing after the step of polishing etch in a separate treatment module takes place, in a treatment module for rinsing or on a specially designed collection container.
  • multiple treatment modules for polishing etching it is also possible with multiple treatment modules for polishing etching to provide a single treatment module for rinsing.
  • polishing etch it is possible, at least in the step of polishing etch, to spray or spray the silicon blocks from above and along the longitudinal sides and also from below with etching solution, which under certain circumstances can also take place with large amounts of etching solution.
  • etching solution can also be used circulating, so that the total vorzuhaltende amount of etching solution is not too large.
  • at least the polishing etching can be carried out by at least partially immersing a silicon block in the etching solution or an etching bath. This can be done either from a further spraying of the silicon block from above.
  • a silicon block can be completely immersed in an etching bath. This can be done such that the silicon block is introduced into a chamber of the treatment module for polishing etching, in particular at the same height of the horizontal transport path of the system. Subsequently, advantageously without lowering the silicon block, the chamber is sealed laterally and downwardly, for example by flaps, in particular in the case of rigid side walls by inlet flaps and outlet flaps. After sealing the chamber, the etching solution can be introduced, advantageously as mentioned above from above and with increasing fill level, particularly advantageously until a silicon block is completely immersed. When the desired treatment time has been reached, the etching solution is drained off, then the flaps are opened and the silicon block is removed.
  • the volume of the chamber of the treatment module is only slightly larger than the silicon block itself. Especially this is advantageously about 10% to 30%, so that when the silicon block is completely immersed in the etching solution, its total amount required is not too great.
  • the treatment module is advantageously considerably larger form, since spray nozzles or the like. must be provided.
  • a rinsing process either after the alkaline cleaning or polishing, possibly also after the KOH process, is advantageously carried out with water, it being particularly advantageous for water of different purity to be used. It is possible, for example, to perform a last rinse in a rinsing sequence on a silicon block with fresh water, which is collected after rinsing. In the next flushing sequence at the next silicon block, this water is then used for a penultimate rinse, and then used, for example, in the next cycle in the next rinse sequence as the third last or first rinse.
  • a final rinse each with fresh water. It can also be provided that for this last rinse less water is used as for the rinses before, which also the fresh water consumption can be lowered.
  • a system according to the invention with a plurality of treatment modules each have corresponding water tanks or basins and corresponding valves and pumps to provide the waterways and use.
  • the intermittent movement of a silicon ingot during a process step is advantageously provided in polishing etching.
  • this is relatively easy to accomplish that a transport path is formed for example by appropriate transport rollers and they are driven accordingly.
  • the etching solution for polishing etching and under certain circumstances also the alkaline cleaning liquor or the KOH treatment liquid, is sprayed onto the silicon blocks in a recirculating system , This achieves the absolutely required amount of treatment liquid. It can be provided that always a certain part is removed or always new treatment liquid is tracked. Alternatively, permanent cleaning options such as filters or the like. possible, depending on the type of treatment liquid.
  • the system according to the invention for carrying out the above-described method has several own treatment modules, wherein in each case a treatment module is provided at least for the alkaline cleaning and the polishing etching.
  • a separate treatment module is provided for the KOH process.
  • the treatment modules are designed essentially like conventional treatment modules for such wet processes in the in-line method.
  • the rinsing step can be installed with water through appropriate nozzles and corresponding water tank.
  • a separate rinsing module is provided behind the treatment module for polishing etching and before the treatment module for the KOH process, in particular also in order to increase the throughput precisely at the time-consuming step with the polishing etching.
  • a drying module for removing treatment liquid from a silicon block or also for direct drying advantageously has at least one fan, possibly also thermal dryers such as heat radiators or heaters.
  • 1 is a schematic side view of a system consisting of several modules for cleaning silicon blocks
  • Fig. 2 is a schematic functional representation of a cleaning module with different liquid tanks
  • Fig. 3 is a schematic representation of a Polier obviously module with immersion of the silicon blocks in a Polierford liquid.
  • Fig. 1 is a side view of a system 11 according to the invention for performing the method described above.
  • the system 11 consists of several treatment modules, which are explained in detail below.
  • an infeed module 13 which consists essentially of a transport track 14 with conventional transport rollers. Before the inlet module 13 is, for example, a shape of the silicon blocks from the aforementioned silicon ingots.
  • a cleaning module 16 which is formed with a closed housing, as is conventional and known per se.
  • the cleaning module 16 has two spray devices 18a and 18b with the spray device 18a above the transport path 14 and thus over the silicon blocks and the spray device 18b below. Further spraying devices, not shown, can be arranged on the longitudinal sides.
  • the spray devices 18 are fed from a tank 21 for alkaline cleaning liquor 21 and from a tank 23 for rinsing water 24 and from a fresh water connection 26. Via two pumps 27a and 27b and valves 28a-c, the feed to the spray devices 18 is controlled.
  • the drain from the cleaning module 16 or a corresponding trough into the tanks 20 or 23 is controlled via valves 28 d and e.
  • the process here is such that first by means of the pump 27a and opened valves 28a and d and otherwise closed valves, the silicon blocks 17 are sprayed with the cleaning liquor 21 from the tank 20 for a predetermined time.
  • the silicon blocks can either stand still on the transport path 14 or be moved intermittently forward and backward.
  • valves 28b and e and otherwise closed valves in a first rinse with the rinse water 24 from the rinsing water tank 23 via the spray devices 18 a first time. Thereafter, the valves are closed again. Then, the valves 28c and 28e are opened and the other valves are closed, so that is sprayed from the fresh water connection 26 or with fresh water on the spray devices 18. The contaminated by the flushing fresh water then passes through the valve 28e in the flushing water tank 23, so that only slightly polluted water is supplied here. A cleaning or renewal of both the cleaning liquor 21 and the rinse water 24 is easily possible for the expert. Thus, the above-described two-stage rinsing is performed.
  • a polishing etching module 30 has flaps 31a and b which can be moved downwards and form a sealed basin with a bottom 32 below the transport path 14 and in cooperation with side walls (not shown) , After retracting the silicon blocks 17, the flaps 31 are driven down to produce the liquid-tight pool. Then, by means of the spraying devices 33, etching solution for polishing etching from a liquid tank 34 is applied to the silicon blocks 17, thereby filling the basin with a filling level beyond the blocks. Under certain circumstances, with a movement of the silicon blocks 17 in an intermittent manner, a predetermined period of time is awaited. About 25 ⁇ m are removed from the silicon material of the silicon blocks. Then, the etching solution is discharged and returned to the liquid tank 34, and then the flaps
  • a flushing module 37 This is similar to the cleaning module 16 and has a spray device 38 above the silicon blocks and, similarly as shown in Fig. 2, corresponding spray devices below the silicon blocks 17 fed the spray device 38 or is flushed with rinse water 41 from a rinse water tank 40 and fresh water from a fresh water connection 43. This can be done at least two stages as described with reference to FIG. 2 and the cleaning module.
  • the KOH process module 45 follows again with a similar structure as the cleaning module 16. It has spraying devices 46, advantageously both above and below the silicon blocks 17 and the transport path 14.
  • a drying module 55 is provided.
  • the flushed silicon blocks 17 are retracted by the KOH process and blown dry by means of fans 56 and air nozzles 57.
  • filters 58 are provided for filtering the air.
  • Behind the drying module 55 is an outlet module 60, with which the silicon blocks 17 are transported further for further processing after cleaning and drying.
  • an alkaline cleaning liquid from the prior art can be used.
  • the etching solution for polishing etching may be a mixture of 49% HF solution and 69% HNO 3 solution in a ratio of 1: 4 to 1: 7.
  • the process temperature can be between 15 ° C and 25 ° C, ie essentially at room temperature.
  • KOH process 5% KOH solution is used, also at a temperature of 15 ° C to 25 ° C.
  • the cycle time for such a system can be about two and a half minutes.
  • the etching time in each case during the alkaline cleaning as well as during polishing, in some circumstances also during the KOH process can be about one and a half minutes.
  • the continuous transport path 14 is important and advantageous.
  • the intermittent movement of the silicon blocks in the individual treatment modules is also advantageous in order to increase the exposure time or the process time.
  • the rinsing in the rinsing module 37 therefore takes place separately from the polishing etching module 30, in order to increase the throughput in this process, which actually requires the longest process time, and also to prevent too much polishing etching solution 35 from entering the wastewater. This is less critical in the KOH process module 45.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne le traitement ou la purification de blocs de silicium (17) pour la fabrication de tranches destinées à des cellules solaires, les blocs de silicium (17) étant transportés sur une bande transporteuse (14) horizontale en continu à travers différents modules de traitement (16, 30, 37, 45, 55). Lors d'une première opération ou bien dans un module de purification (16), les blocs de silicium (17) sont soumis à un nettoyage alcalin et à un rinçage, puis lors d'une deuxième opération ou bien dans un module d'attaque chimique et de polissage (30), ils subissent une attaque chimique lors de laquelle les quatre faces des blocs de silicium sont mises en contact avec une solution d'attaque, avant d'être rincées dans un module de rinçage (37).
PCT/EP2008/010871 2007-12-19 2008-12-19 Procédé et installation de traitement ou de purification de blocs de silicium Ceased WO2009077199A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007063169.5 2007-12-19
DE200710063169 DE102007063169A1 (de) 2007-12-19 2007-12-19 Verfahren und Anlage zum Bearbeiten bzw. Reinigen von Si-Blöcken

Publications (2)

Publication Number Publication Date
WO2009077199A2 true WO2009077199A2 (fr) 2009-06-25
WO2009077199A3 WO2009077199A3 (fr) 2010-11-18

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Application Number Title Priority Date Filing Date
PCT/EP2008/010871 Ceased WO2009077199A2 (fr) 2007-12-19 2008-12-19 Procédé et installation de traitement ou de purification de blocs de silicium

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DE (1) DE102007063169A1 (fr)
WO (1) WO2009077199A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010043596A1 (fr) * 2008-10-15 2010-04-22 Gebr. Schmid Gmbh & Co. Procédé destiné à séparer des tranches d’un support de tranche et dispositif associé
CN114212796A (zh) * 2021-12-31 2022-03-22 隆基绿能科技股份有限公司 一种硅料的处理装置和硅料的处理方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012209902A1 (de) * 2012-06-13 2013-12-19 Singulus Stangl Solar Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleiterstäben mit einer Flüssigkeit oder einem Gas
JP6542202B2 (ja) 2013-09-18 2019-07-10 フリント、グループ、ジャーマニー、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング デジタル的に露光可能なフレキソ印刷要素、及びフレキソ印刷版を生産するための方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4119519A1 (de) * 1991-06-13 1992-12-17 Wacker Chemitronic Verfahren und vorrichtung zum transport und zur oberflaechenbehandlung von polykristallinem halbleitermaterial
JP2003164816A (ja) * 2001-11-29 2003-06-10 Fine Machine Kataoka Kk 洗浄装置と、そのワーク搬送方法
US7287535B2 (en) * 2003-05-01 2007-10-30 Fine Machine Kataoka Co., Ltd. Work washing apparatus
JP2004356252A (ja) * 2003-05-28 2004-12-16 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの加工方法
DE102006003990A1 (de) * 2006-01-23 2007-08-02 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zum Aufbereiten bzw. Bearbeiten von Siliziummaterial

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010043596A1 (fr) * 2008-10-15 2010-04-22 Gebr. Schmid Gmbh & Co. Procédé destiné à séparer des tranches d’un support de tranche et dispositif associé
CN114212796A (zh) * 2021-12-31 2022-03-22 隆基绿能科技股份有限公司 一种硅料的处理装置和硅料的处理方法
CN114212796B (zh) * 2021-12-31 2024-01-30 隆基绿能科技股份有限公司 一种硅料的处理装置和硅料的处理方法

Also Published As

Publication number Publication date
DE102007063169A1 (de) 2009-06-25
WO2009077199A3 (fr) 2010-11-18

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