WO2009077199A3 - Procédé et installation de traitement ou de purification de blocs de silicium - Google Patents

Procédé et installation de traitement ou de purification de blocs de silicium Download PDF

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Publication number
WO2009077199A3
WO2009077199A3 PCT/EP2008/010871 EP2008010871W WO2009077199A3 WO 2009077199 A3 WO2009077199 A3 WO 2009077199A3 EP 2008010871 W EP2008010871 W EP 2008010871W WO 2009077199 A3 WO2009077199 A3 WO 2009077199A3
Authority
WO
WIPO (PCT)
Prior art keywords
blocks
cleaning
treating
installation
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/010871
Other languages
German (de)
English (en)
Other versions
WO2009077199A2 (fr
Inventor
Heinz Kappler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Publication of WO2009077199A2 publication Critical patent/WO2009077199A2/fr
Anticipated expiration legal-status Critical
Publication of WO2009077199A3 publication Critical patent/WO2009077199A3/fr
Ceased legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08Etching
    • C30B33/10Etching in solutions or melts
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne le traitement ou la purification de blocs de silicium (17) pour la fabrication de tranches destinées à des cellules solaires, les blocs de silicium (17) étant transportés sur une bande transporteuse (14) horizontale en continu à travers différents modules de traitement (16, 30, 37, 45, 55). Lors d'une première opération ou bien dans un module de purification (16), les blocs de silicium (17) sont soumis à un nettoyage alcalin et à un rinçage, puis lors d'une deuxième opération ou bien dans un module d'attaque chimique et de polissage (30), ils subissent une attaque chimique lors de laquelle les quatre faces des blocs de silicium sont mises en contact avec une solution d'attaque, avant d'être rincées dans un module de rinçage (37).
PCT/EP2008/010871 2007-12-19 2008-12-19 Procédé et installation de traitement ou de purification de blocs de silicium Ceased WO2009077199A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007063169.5 2007-12-19
DE200710063169 DE102007063169A1 (de) 2007-12-19 2007-12-19 Verfahren und Anlage zum Bearbeiten bzw. Reinigen von Si-Blöcken

Publications (2)

Publication Number Publication Date
WO2009077199A2 WO2009077199A2 (fr) 2009-06-25
WO2009077199A3 true WO2009077199A3 (fr) 2010-11-18

Family

ID=40546094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/010871 Ceased WO2009077199A2 (fr) 2007-12-19 2008-12-19 Procédé et installation de traitement ou de purification de blocs de silicium

Country Status (2)

Country Link
DE (1) DE102007063169A1 (fr)
WO (1) WO2009077199A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008053598A1 (de) * 2008-10-15 2010-04-22 Gebr. Schmid Gmbh & Co. Verfahren zum Lösen von Wafern von einem Waferträger und Vorrichtung dafür
DE102012209902A1 (de) * 2012-06-13 2013-12-19 Singulus Stangl Solar Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleiterstäben mit einer Flüssigkeit oder einem Gas
JP6542202B2 (ja) 2013-09-18 2019-07-10 フリント、グループ、ジャーマニー、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング デジタル的に露光可能なフレキソ印刷要素、及びフレキソ印刷版を生産するための方法
CN114212796B (zh) * 2021-12-31 2024-01-30 隆基绿能科技股份有限公司 一种硅料的处理装置和硅料的处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4119519A1 (de) * 1991-06-13 1992-12-17 Wacker Chemitronic Verfahren und vorrichtung zum transport und zur oberflaechenbehandlung von polykristallinem halbleitermaterial
EP1643545A1 (fr) * 2003-05-28 2006-04-05 SUMCO Corporation Procede de traitement de plaquettes de silicium
WO2007082772A2 (fr) * 2006-01-23 2007-07-26 Gebr. Schmid Gmbh + Co. Procédé et dispositif de préparation et de traitement de matériau de silicium

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003164816A (ja) * 2001-11-29 2003-06-10 Fine Machine Kataoka Kk 洗浄装置と、そのワーク搬送方法
US7287535B2 (en) * 2003-05-01 2007-10-30 Fine Machine Kataoka Co., Ltd. Work washing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4119519A1 (de) * 1991-06-13 1992-12-17 Wacker Chemitronic Verfahren und vorrichtung zum transport und zur oberflaechenbehandlung von polykristallinem halbleitermaterial
EP1643545A1 (fr) * 2003-05-28 2006-04-05 SUMCO Corporation Procede de traitement de plaquettes de silicium
WO2007082772A2 (fr) * 2006-01-23 2007-07-26 Gebr. Schmid Gmbh + Co. Procédé et dispositif de préparation et de traitement de matériau de silicium

Also Published As

Publication number Publication date
DE102007063169A1 (de) 2009-06-25
WO2009077199A2 (fr) 2009-06-25

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