WO2009148253A3 - 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자 - Google Patents

반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자 Download PDF

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Publication number
WO2009148253A3
WO2009148253A3 PCT/KR2009/002938 KR2009002938W WO2009148253A3 WO 2009148253 A3 WO2009148253 A3 WO 2009148253A3 KR 2009002938 W KR2009002938 W KR 2009002938W WO 2009148253 A3 WO2009148253 A3 WO 2009148253A3
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WIPO (PCT)
Prior art keywords
light emitting
wafer
emitting device
semiconductor light
supporting substrate
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Ceased
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PCT/KR2009/002938
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English (en)
French (fr)
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WO2009148253A2 (ko
Inventor
성태연
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Industry Academy Collaboration Foundation of Korea University
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Industry Academy Collaboration Foundation of Korea University
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Priority claimed from KR20080068521A external-priority patent/KR101171855B1/ko
Priority claimed from KR1020080068525A external-priority patent/KR101231118B1/ko
Priority to US12/995,998 priority Critical patent/US20110127567A1/en
Application filed by Industry Academy Collaboration Foundation of Korea University filed Critical Industry Academy Collaboration Foundation of Korea University
Priority to JP2011512377A priority patent/JP5189681B2/ja
Priority to CN200980130052.8A priority patent/CN102106006B/zh
Priority to EP09758506.1A priority patent/EP2302705B1/en
Publication of WO2009148253A2 publication Critical patent/WO2009148253A2/ko
Publication of WO2009148253A3 publication Critical patent/WO2009148253A3/ko
Anticipated expiration legal-status Critical
Priority to US14/024,129 priority patent/US8877530B2/en
Priority to US14/481,993 priority patent/US9224910B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

본 발명은 다층 발광구조체 박막을 이용한 반도체 발광소자 제조용 지지기판및 상기 반도체 발광소자 제조용 지지기판을 이용하여 반도체 발광소자를 제조하는 방법에 관한 것이다. 상기 반도체 발광소자 제조용 지지기판은 선택지지기판 위에 순차적으로 적층 형성된 희생층, 히트 씽크층 및 본딩층으로 이루어진다. 상기 반도체 발광소자 제조용 지지기판을 이용한 반도체 발광소자 제조 방법은, 최초 성장기판의 상부에 반도체 다층 발광구조체가 적층/성장된 제 1 웨이퍼를 준비하는 단계; 반도체 발광소자 제조용 지지기판(prepared supporting substrate)인 제 2 웨이퍼를 준비하는 단계; 상기 제 1 웨이퍼의 상부에 상기 제 2 웨이퍼를 본딩하는 단계; 상기 본딩된 결과물로부터 제 1 웨이퍼의 최초 성장기판을 분리하는 단계; 상기 최초 성장기판이 분리된 제1 웨이퍼의 상부에 제 1 오믹접촉 전극을 형성하고 패시베이션(passivation)하는 단계; 및 상기 패시베이션 결과물을 절단하여 단일 칩으로 제작하는 단계를 구비한다.
PCT/KR2009/002938 2008-06-02 2009-06-02 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자 Ceased WO2009148253A2 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP09758506.1A EP2302705B1 (en) 2008-06-02 2009-06-02 Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
CN200980130052.8A CN102106006B (zh) 2008-06-02 2009-06-02 用于制备半导体发光装置的支撑衬底和使用支撑衬底的半导体发光装置
US12/995,998 US20110127567A1 (en) 2008-06-02 2009-06-02 Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
JP2011512377A JP5189681B2 (ja) 2008-06-02 2009-06-02 半導体発光素子製造用支持基板及びこの支持基板を用いた半導体発光素子
US14/024,129 US8877530B2 (en) 2008-06-02 2013-09-11 Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
US14/481,993 US9224910B2 (en) 2008-06-02 2014-09-10 Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR20080051397 2008-06-02
KR10-2008-0051397 2008-06-02
KR10-2008-0051396 2008-06-02
KR20080051396 2008-06-02
KR20080068521A KR101171855B1 (ko) 2008-06-02 2008-07-15 반도체 발광소자용 지지기판 및 상기 지지기판을 이용한고성능 수직구조의 반도체 발광소자
KR10-2008-0068521 2008-07-15
KR1020080068525A KR101231118B1 (ko) 2008-06-02 2008-07-15 반도체 발광소자용 지지기판 및 상기 지지기판을 이용한고성능 수직구조의 반도체 발광소자
KR10-2008-0068525 2008-07-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/995,998 A-371-Of-International US20110127567A1 (en) 2008-06-02 2009-06-02 Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
US14/024,129 Division US8877530B2 (en) 2008-06-02 2013-09-11 Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates

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Publication Number Publication Date
WO2009148253A2 WO2009148253A2 (ko) 2009-12-10
WO2009148253A3 true WO2009148253A3 (ko) 2010-03-18

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PCT/KR2009/002938 Ceased WO2009148253A2 (ko) 2008-06-02 2009-06-02 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자

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US (3) US20110127567A1 (ko)
EP (1) EP2302705B1 (ko)
JP (2) JP5189681B2 (ko)
CN (2) CN102106006B (ko)
WO (1) WO2009148253A2 (ko)

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