WO2012007241A3 - Halbfabrikat und verfahren zur herstellung einer leuchtdiode - Google Patents

Halbfabrikat und verfahren zur herstellung einer leuchtdiode Download PDF

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Publication number
WO2012007241A3
WO2012007241A3 PCT/EP2011/059907 EP2011059907W WO2012007241A3 WO 2012007241 A3 WO2012007241 A3 WO 2012007241A3 EP 2011059907 W EP2011059907 W EP 2011059907W WO 2012007241 A3 WO2012007241 A3 WO 2012007241A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diode
producing
carrier material
semifinished product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/059907
Other languages
English (en)
French (fr)
Other versions
WO2012007241A2 (de
Inventor
Volker Arning
Mikko Meyder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Evonik Goldschmidt GmbH
Original Assignee
Evonik Goldschmidt GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Goldschmidt GmbH filed Critical Evonik Goldschmidt GmbH
Priority to CA2805348A priority Critical patent/CA2805348A1/en
Priority to KR1020137003659A priority patent/KR20130082498A/ko
Priority to EP11727951.3A priority patent/EP2593976A2/de
Priority to CN2011800439808A priority patent/CN103098245A/zh
Priority to US13/810,151 priority patent/US20130193475A1/en
Priority to JP2013519006A priority patent/JP2013531386A/ja
Publication of WO2012007241A2 publication Critical patent/WO2012007241A2/de
Publication of WO2012007241A3 publication Critical patent/WO2012007241A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07637—Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/641—Dispositions of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)

Abstract

Die Erfindung betrifft ein Verfahren und ein Halbfabrikat (1) zur Herstellung einer Leuchtdiode (2) umfassend: ein flexibles Trägermaterial (3), eine erste und eine zweite auf dem Trägermaterial (3) angeordnete Kontaktfläche (4, 5) zur Herstellung von elektrischen Verbindungen, einen auf dem Trägermaterial (3) angeordneten Leuchtdiodenchip (6) oder eine Aufnahme für einen Leuchtdiodenchip (6), eine in das Trägermaterial (3) geformte klappbare Lasche (7), wobei die Lasche (7) so angeordnet ist, dass diese gegen und/oder auf den Leuchtdiodenchip (6) klappbar ist, wobei auf der klappbaren Lasche (7) wenigstens ein erster elektrischer Verbindungssteg (8) angeordnet ist, der mit der ersten Kontaktfläche (4) verbunden ist und durch Klappen der Lasche (7) mit einem ersten Anschluss des Leuchtdiodenchips (6) verbindbar ist.
PCT/EP2011/059907 2010-07-14 2011-06-15 Halbfabrikat und verfahren zur herstellung einer leuchtdiode Ceased WO2012007241A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA2805348A CA2805348A1 (en) 2010-07-14 2011-06-15 Semifinished product and method for producing a light-emitting diode
KR1020137003659A KR20130082498A (ko) 2010-07-14 2011-06-15 발광 다이오드의 제조를 위한 반제품 및 방법
EP11727951.3A EP2593976A2 (de) 2010-07-14 2011-06-15 Halbfabrikat und verfahren zur herstellung einer leuchtdiode
CN2011800439808A CN103098245A (zh) 2010-07-14 2011-06-15 用于制造发光二极管的半成品和方法
US13/810,151 US20130193475A1 (en) 2010-07-14 2011-06-15 Semifinished product and method for producing a light-emitting diode
JP2013519006A JP2013531386A (ja) 2010-07-14 2011-06-15 発光ダイオードを製造するための半製品および方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010031302.5 2010-07-14
DE102010031302A DE102010031302A1 (de) 2010-07-14 2010-07-14 Halbfabrikat und Verfahren zur Herstellung einer Leuchtdiode

Publications (2)

Publication Number Publication Date
WO2012007241A2 WO2012007241A2 (de) 2012-01-19
WO2012007241A3 true WO2012007241A3 (de) 2012-04-26

Family

ID=44510887

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/059907 Ceased WO2012007241A2 (de) 2010-07-14 2011-06-15 Halbfabrikat und verfahren zur herstellung einer leuchtdiode

Country Status (9)

Country Link
US (1) US20130193475A1 (de)
EP (1) EP2593976A2 (de)
JP (1) JP2013531386A (de)
KR (1) KR20130082498A (de)
CN (1) CN103098245A (de)
CA (1) CA2805348A1 (de)
DE (1) DE102010031302A1 (de)
TW (1) TW201210091A (de)
WO (1) WO2012007241A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014110067A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
CN116629762A (zh) * 2022-02-08 2023-08-22 温南夫 基于流程化数据处理系统的产品订购系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19962194A1 (de) * 1999-12-22 2001-06-28 Flexchip Ag Verfahren zur Herstellung von kontaktierbaren Leiterschleifen für Transponder
US6299498B1 (en) * 1999-10-27 2001-10-09 Shin Lung Liu White-light emitting diode structure and manufacturing method
US20020057056A1 (en) * 2000-08-09 2002-05-16 Tadahiro Okazaki Light-emitting diode
US20050151147A1 (en) * 2003-12-22 2005-07-14 Kunihiro Izuno Semiconductor device and method for manufacturing the same
US20050280354A1 (en) * 2004-06-16 2005-12-22 Shin-Lung Liu Light emitting diode
US20090166661A1 (en) * 2007-12-31 2009-07-02 Sheng-Jia Sheu Light-emitting diode packaging structure and module and assembling method thereof
DE102008062211A1 (de) * 2008-12-13 2010-06-17 Mühlbauer Ag Verfahren zum Herstellen eines Halbleiterbauteils und Halbleiterbauteil

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5184890A (en) * 1991-01-10 1993-02-09 Chen Jen H Lamp assembly

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6299498B1 (en) * 1999-10-27 2001-10-09 Shin Lung Liu White-light emitting diode structure and manufacturing method
DE19962194A1 (de) * 1999-12-22 2001-06-28 Flexchip Ag Verfahren zur Herstellung von kontaktierbaren Leiterschleifen für Transponder
US20020057056A1 (en) * 2000-08-09 2002-05-16 Tadahiro Okazaki Light-emitting diode
US20050151147A1 (en) * 2003-12-22 2005-07-14 Kunihiro Izuno Semiconductor device and method for manufacturing the same
US20050280354A1 (en) * 2004-06-16 2005-12-22 Shin-Lung Liu Light emitting diode
US20090166661A1 (en) * 2007-12-31 2009-07-02 Sheng-Jia Sheu Light-emitting diode packaging structure and module and assembling method thereof
DE102008062211A1 (de) * 2008-12-13 2010-06-17 Mühlbauer Ag Verfahren zum Herstellen eines Halbleiterbauteils und Halbleiterbauteil

Also Published As

Publication number Publication date
JP2013531386A (ja) 2013-08-01
CA2805348A1 (en) 2012-01-19
WO2012007241A2 (de) 2012-01-19
CN103098245A (zh) 2013-05-08
US20130193475A1 (en) 2013-08-01
TW201210091A (en) 2012-03-01
EP2593976A2 (de) 2013-05-22
DE102010031302A1 (de) 2012-01-19
KR20130082498A (ko) 2013-07-19

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