WO2013010896A2 - Système laser comprenant un milieu doté d'un matériau hôte en verre de quartz - Google Patents

Système laser comprenant un milieu doté d'un matériau hôte en verre de quartz Download PDF

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Publication number
WO2013010896A2
WO2013010896A2 PCT/EP2012/063641 EP2012063641W WO2013010896A2 WO 2013010896 A2 WO2013010896 A2 WO 2013010896A2 EP 2012063641 W EP2012063641 W EP 2012063641W WO 2013010896 A2 WO2013010896 A2 WO 2013010896A2
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Prior art keywords
laser
quartz glass
range
wavelength
laser system
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PCT/EP2012/063641
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German (de)
English (en)
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WO2013010896A3 (fr
Inventor
Christian Neumann
Mark STAMMINGER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Quarzglas GmbH and Co KG
Shin Etsu Quartz Products Co Ltd
Original Assignee
Heraeus Quarzglas GmbH and Co KG
Shin Etsu Quartz Products Co Ltd
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Publication of WO2013010896A2 publication Critical patent/WO2013010896A2/fr
Publication of WO2013010896A3 publication Critical patent/WO2013010896A3/fr
Anticipated expiration legal-status Critical
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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/06Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00Compositions for glass with special properties
    • C03C4/0071Compositions for glass with special properties for laserable glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1681Solid materials using colour centres
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00Glass compositions
    • C03C2201/06Doped silica-based glasses
    • C03C2201/20Doped silica-based glasses containing non-metals other than boron or halide
    • C03C2201/23Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094038End pumping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0943Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a gas laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1691Solid materials characterised by additives / sensitisers / promoters as further dopants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/17Solid materials amorphous, e.g. glass
    • H01S3/176Solid materials amorphous, e.g. glass silica or silicate glass

Definitions

  • Laser system comprising a laser medium
  • the invention relates to a laser system comprising a laser medium with a host material of quartz glass, a pump light source acting on the laser medium and an optical resonator.
  • the invention relates to a new use of synthetically produced quartz glass which has oxygen deficiency defects.
  • Solid state lasers are usually in the form of a rod, fiber or disk. If the active laser medium is arranged within an optical resonator, the generated laser light is amplified and emitted as a laser beam. For optical pumping arc lamps, flashlamps, semiconductor lasers or excimer lasers are used.
  • Solid state lasers with a host material of quartz glass are used as fiber lasers or fiber amplifiers in optical communications technology, in medical technology and for material processing.
  • the laser-active quartz glass contains dopants which represent the actual active medium and which are usually rare earth cations (lanthanides, in particular neodymium, erbium, holmium, thulium and ytterbium), but also cations of the so-called transition metals is.
  • Such a fiber laser is known for example from DE 10 2005 042 073 A1.
  • frequency measurement to provide time or frequency standards or to measure atomic electronic energy transitions in spectroscopy ultrashort laser pulses with pulse durations in the one or two-digit fs range are required.
  • US Pat. No. 4,847,843 A also discloses laser materials made of heavy metal fluoride glasses. These glasses contain alkali fluorides, which are considered to be the cause of color centers. Fluoride glasses are multi-component glasses that can not be produced via the gas phase. They tend to crystallize and therefore can be produced only with great effort in small volumes.
  • titanium sapphire lasers are particularly suitable as short-pulse lasers
  • Excitation of the Ti 3+ ion in the sapphire crystal lattice shows a broad absorption band in the range of 490 to 600 nm and results in a broad tunable gain bandwidth between 670 and 1070 nm. From the corresponding difference in wavelength frequencies of 200 THz, it can be seen from the above Equation (1) in the Ti-sapphire laser has a pulse duration of about 5 fs.
  • the titanium sapphire laser Because of the crystalline structure of the sapphire host material, the titanium sapphire laser is subject to limitations in its geometric shape design. It emits from the VIS to the IR wavelength range and is comparatively expensive. - -
  • Disadvantages with regard to shape design and processability also have other crystalline laser-active materials, such as those known from US 4,604,225 A and US 4,963,755 A.
  • crystalline oxide in the form of MgO, CaO, Al2O3 and SrO is proposed.
  • the laser activity is based on vacancies in the crystal lattice, which are generated by oxygen deficiency defects. Their concentration is at least 1 ⁇ 10 16 cm -3 .
  • the crystalline material should contain as little hydrogen as possible ( ⁇ 10 12 protons / cm 3 ).
  • the object of the present invention is to provide an inexpensive laser system with a tunable in a wide wavelength range and easily deformable laser material based on quartz glass, which is suitable for the emission of new laser frequencies into the UV range and also has potential for use in a short pulse laser system ,
  • Another object of the invention is to provide a new use of a synthetic quartz glass with oxygen deficiency defects.
  • this object is achieved on the basis of a laser system of the type mentioned in the introduction in that the host material is synthetically produced quartz glass having a concentration of oxygen deficiency defects of at least 1 ⁇ 10 16 cm -3 and a hydrogen concentration of less than 5 ⁇ 10 16 Having molecules / cm 3 .
  • the network structure of quartz glass can have a variety of defects.
  • One group of such defects are oxygen deficiency defects in which oxygen sites of the network are vacant or occupied by other atoms and which can absorb electromagnetic radiation.
  • oxygen deficiency defects in which oxygen sites of the network are vacant or occupied by other atoms and which can absorb electromagnetic radiation.
  • Well-known examples are:
  • the laser-active quartz glass of the laser system according to the invention has a lower stoichiometric oxygen content and consequently shows the two oxygen deficiency defects specified above in a total concentration of at least 1 x 10 16 cm 3 , preferably a total of at least 1 x 10 17 cm "3.
  • the concentration of these oxygen deficiency defects in quartz glass is determined spectroscopically by the absorption of the E 'center at 210 nm or the ODC center at 245 nm It is to be assumed that the quartz glass present far beyond its stoichiometric composition has, besides the two specified ones, further oxygen deficiency defects, which are determined by their specific photoluminescence ar, without being specifically assigned to a specific type of defect.
  • Oxygen deficiency defects in synthetic quartz glass are usually regarded as disadvantageous and, as far as possible, avoidable structural defects which can impair the optical properties, in particular the resistance to high-energy excimer laser radiation. Therefore, there are a variety of studies in the literature on the origin, properties and structure of these defects. Thus, the luminescence of several known oxygen deficiency defects in quartz glass is described, for example, in the paper by AN Trukhin, H.-J. Fitting. "Investigation of optical and radiation properties of oxygen deficient silica glasses"; Journal of Non-Crystalline Solids, Vol. 248, pp.
  • the frequency interval suitable for amplification is not limited to a few wavelengths but encompasses a large wavelength range, and individual suitable transitions are explained in more detail below.
  • the oxygen deficiency defects can be introduced into the synthetic quartz glass by a subsequent temperature treatment in a reducing atmosphere. However, this results in a gradient of the defect center distribution over the volume of the quartz glass.
  • a silicon-containing feedstock is converted by hydrolysis or oxidation in a reaction zone to SiO 2 particles and deposited on a support.
  • Examples include the so-called OVD method (outside vapor phase deposition), the VAD process (vapor phase axial deposition) or the POD process (plasma outside deposition).
  • Both methods are suitable for the generation of oxygen deficiency defects by setting reducing conditions during the deposition process.
  • a condition "reducing" in this sense if in the formation of the SiO 2 particles in the reaction zone and their deposition,
  • the former happens by conducting the deposition process with such a low oxygen supply that, given stoichiometric reasons, the complete combustion of the silicon compound in the reaction zone is precluded for the given reaction conditions.
  • the latter occurs, for example, by shielding the feedstock from oxygen in the reaction zone, such as by providing a bleed gas stream of inert gas between the stream of feed and an oxygen stream, or by setting too short a reaction zone and / or by generating too high a flow velocity Feedstock in the reaction zone.
  • a substoichiometric synthetic quartz glass is obtained in terms of oxygen content. Measures for adjusting the desired oxygen deficiency defects as a result of reducing conditions during the deposition process can be checked for their suitability on the basis of a few experiments.
  • the soot method also offers the possibility of aftertreatment of the soot body in a reducing atmosphere to produce homogeneously distributed oxygen deficiency defects.
  • An atmosphere "has a reducing effect" in this sense when there is a substance which acts as an electron donor to silicon or S1O 2 , such as hydrogen or hydrocarbons.
  • the laser-active quartz glass according to the invention is characterized by a low hydrogen content of less than 5 ⁇ 10 16 molecules / cm 3 , preferably less than 5 ⁇ 10 15 molecules / cm 3 .
  • Hydrogen is suitable for saturating the existing lack of oxygen deficiency. It reduces or prevents their photoluminescence and thus also affects the effectiveness of the associated with the lack of oxygen deficiency energy transfer.
  • Quartz glass as a host material of the laser system according to the invention can be easily processed. It can be produced in high purity by means of vapor deposition and, in particular, it is easily and without danger of deforming a crystallization, for example into a fiber for use in a fiber laser.
  • the synthetic quartz glass consists exclusively of silicon and oxygen and contains no foreign substances. However, foreign substances are inevitable in practice. Foreign substances in the synthetic quartz glass can influence the lasing energy transitions or absorb the pump radiation or the emitted radiation.
  • Carbon which can form, for example, by using organic silicon-containing feedstock as a result of reducing conditions in the deposition process or in a reducing aftertreatment of a SiO 2 soot body, does not have this detrimental effect - just as little as nitrogen, so that these substances are not classified as "foreign substance" subsumed above.
  • the quartz glass contains foreign substances, with the exception of carbon and nitrogen, in a total concentration of less than 30 ppm by weight, preferably less than 3 ppm by weight
  • hydroxyl groups are also suitable for saturating oxygen deficiency defects. You can therefore change the lasing energy transfer or even prevent it. Therefore, the quartz glass of the - -
  • Host material preferably has a hydroxyl group content of less than 30 ppm by weight, preferably less than 3 ppm by weight.
  • halogens also have this effect, their concentration in the quartz glass of the host material should be as low as possible.
  • the content of halogens in the quartz glass is preferably less than 30 ppm by weight, more preferably less than 3 ppm by weight, and ideally equal to zero.
  • Metallic foreign substances are in particular alkali metals and alkaline earth metals, as well as the internal transition metals of the periodic table and the lanthanides. These include the above-mentioned laser-active dopants in quartz glass for conventional fiber lasers and fiber amplifiers. In quartz glass, these substances typically exist in ionic form. In particular, at substoichiometric oxygen content but it can also lead to reduced, metallic impurities. Irrespective of this, metallic foreign substances can produce pronounced absorptions which reduce the pumping or emission radiation or impair the energy transitions of the intrinsic defects.
  • the content of metallic foreign substances in the quartz glass of the host material is therefore preferably less than 1 ppm by weight in total, more preferably less than 100 ppm by weight.
  • the pumping light source emits excitation radiation having a wavelength in the range from 190 nm to 320 nm.
  • Suitable pump light sources are, for example, excimer radiators such as
  • attractive laser-active transitions in the oxygen-deficient quartz glass are characterized by the wavelength range of their excitation radiation and the bandwidth of the radiation emission that can be achieved in this case according to the wavelength of the laser radiation:
  • the pumping light source emits excitation radiation having a wavelength in the range of 190 to 230 nm, wherein the resonator is tuned to an emission wavelength of the laser medium in the range of 310 to 400 nm. , ,
  • the pumping light source emits excitation radiation having a wavelength in the range of 190 to 230 nm, wherein the resonator is tuned to an emission wavelength of the laser medium in the range of 400 to 600nm.
  • the pumping light source emits excitation radiation having a wavelength in the range of 230 to 260 nm, wherein the resonator is tuned to an emission wavelength of the laser medium in the range of 420 to 520 nm.
  • the pumping light source emits excitation radiation having a wavelength in the range of 290 to 310 nm, the resonator being tuned to an emission wavelength of the laser medium in the range of 480 to 520 nm.
  • quartz glass is proposed to be used as an active laser medium, with the proviso that the quartz glass has a concentration of oxygen deficiency defects of at least 1 ⁇ 10 16 cm -3 and a hydrogen concentration of less than 5 ⁇ 10 16 molecules / cm 3 Quartz glass is the E'-center with only three-coordinate silicon atom and a paramagnetic electron with an absorption maximum at a wavelength of 210 nm, and the ODC center with a direct -Si-Si bond with absorption maxima at wavelengths of 163 nm and 243
  • the concentration of these two oxygen deficiency defects in the quartz glass is in total at least 1 ⁇ 10 16 cm -3 , preferably at least 1 ⁇ 10 17 cm -3 Atoms are occupied and the electromagnetic radiation abso can rape.
  • the fused silica has a hydrogen concentration of less than 5 x 10 16 molecules / cm 3 , preferably less than 5 x 10 15 molecules / cm 3 , on. - -
  • the active laser medium is in the form of a laser fiber.
  • the laser fiber has a core of the laser-active quartz glass, which is usually enveloped by one or more cladding glass layers of undoped or doped quartz glass.
  • a particular advantage lies in the fact that the laser-active quartz glass is long stretched in the fiber with a large surface and therefore easy to cool.
  • the coolability of the lasing quartz glass is particularly necessary because of its low thermal conductivity.
  • FIG. 2 shows a two-dimensional emission excitation spectrum of quartz glass with oxygen deficiency defects at excitation wavelengths in the range from 200 to 380 nm and emission wavelengths in the range from 310 to 400 nm
  • FIG. 3 shows a two-dimensional emission excitation spectrum of quartz glass with oxygen deficiency defects at excitation wavelengths in FIG Range of 200 to 500 nm and emission wavelengths in the range of 400 to 600 nm, and
  • Figure 4 shows a schematic representation of an embodiment of the laser system according to the invention using a fiber laser with a fiber core made of quartz glass, which contains intrinsic color centers.
  • a porous SiO 2 soot body with an outer diameter of 100 mm and a weight of 1 kg is first prepared by flame hydrolysis of SiCI 4 in the usual manner. This is introduced into a treatment furnace, the furnace chamber evacuated and heated to a temperature of 500 ° C. After a holding time of 60 minutes, hexamethyldisilazane is introduced into the furnace chamber at a rate of 1 mol / h with nitrogen as the carrier gas, and the soot body is treated in this atmosphere for 3 hours.
  • the thus treated soot body is placed in a vacuum oven and therein under vacuum (0.001 mmHg) first heated to 800 ° C and after one hour to a temperature of 1600 ° C and sintered to quartz glass.
  • vacuum 0.001 mmHg
  • a transparent, high-purity synthetic quartz having a hydroxyl group content below 1 ppm by weight, a chlorine content of less than 30 ppm by weight, a carbon content of 100 ppm by weight, a nitrogen content of 80 ppm by weight and a hydrogen content of less than 5 x 10 16 molecules / cm 3 .
  • the concentration of Li is less than 2 parts by weight ppb and the continuous following metallic impurities are each less than 5 parts by weight ppb: Na, K, Mg, Al, K, Ca, Ti, Cr, Fe, Ni, Cu, Mo, W, V, Zn.
  • the total concentration of metallic impurities is less than 100 wppb. - -
  • EP 1 580 170 A1 aims at setting the highest possible viscosity of the quartz glass.
  • the low hydroxyl group content of the resulting silica glass contributes to this goal.
  • the aftertreatment of the porous SiO 2 soot body proposed therein in a reducing atmosphere-due to the action of the organic, silicon-containing compound hexamethyldisilazane- also leads to a large number of different oxygen deficiency defects in the synthetic quartz glass. This is also reflected in the fact that the thus treated quartz glass has a high absorption at a wavelength of about 245 nm. The concentration of the ODC centers absorbing at this wavelength is determined spectroscopically and is more than 1 ⁇ 10 17 cm -3 .
  • a sample of the synthetic quartz glass containing oxygen deficiency defects is tempered in a cryostat.
  • the sample is optically excited by means of a deuterium lamp with a continuous emission spectrum.
  • the excitation wavelength is changed by monochromator in 5nm steps and the exciting light beam is focused on the sample.
  • the luminescence of the sample is spectrally decomposed in a monochromator and the components of two detectors are measured and the measured values are fed via an amplifier to a computer for evaluation.
  • FIGS. 1 to 3 show the photoluminescence spectra thus obtained in the form of two-dimensional PL / PLE diagrams.
  • the excitation wavelength ⁇ ⁇ (in nm) is plotted against the emission wavelength ⁇ ⁇ (in nm) of the measured photoluminescence. Points of the same emission intensities are connected by iso-lines.
  • FIG. 1 shows a pronounced photoluminescence in the excitation field between 230 nm and approximately 270 nm.
  • the radiation emitted thereby extends over the wavelength range from approximately 260 nm to over 300 nm. This corresponds to a bandwidth of the photon energy of more than 0.64 eV, which is the Suitability of this transition Ü1 for a short pulse laser suggests.
  • the density of the iso-lines shows the high intensity of the photoluminescence at the transition Ü1, which can be associated with an ODC center, but also a superposition of several transitions can be considered the..
  • short life of the photoluminescence makes it difficult to achieve a population inversion, so that the transition Ü1 is rather unsuitable for laser emission.
  • the high intensity of the transition Ü1 or of the transitions within this measurement field is so dominant that further photoluminescence is lost in the same measurement window and therefore does not appear in FIG.
  • the relevant transition Ü2 is shown in FIG. 2 and shows itself as a particularly broadband emission in the wavelength range from 310 to 400 nm with excitation radiation in the wavelength range from 190 to 230 nm. This corresponds to a bandwidth of the photon energy of more than 0.65 eV, which makes the transition Ü2 in combination with the lifetime of 10 s of the photoluminescence appear to be suitable for a short pulse laser.
  • FIG. 3 shows a plurality of photoluminescence regions at excitation wavelengths between 200 and 300 nm. Particularly interesting is a transition U3 or a superposition of several transitions at an emission wavelength in the range of 400 to 600 nm, which results at excitation wavelengths in the range from 190 to 230 nm.
  • the high density of the iso-lines indicates the high intensity of the luminescence, which is attributed here to an E 'center of the quartz glass.
  • the measuring field of FIG. 3 shows a further pronounced transition U4 with an excitation radiation in the range from 230 to 260 nm and an emission wavelength in the range from 420 to 520 nm.
  • This luminescence can likewise be assigned to an oxygen deficiency defect in the form of an ODC center. It decays with a duration of about 10 "3 s, and the bandwidth of the photon energy (from 430 nm to 500 nm) extends over about 0.4 eV.
  • the excitation radiation emits with a wavelength in the range from 290 to - -
  • a rod of the oxygen-deficient quartz glass is coated in a POD (Plasma Outside Deposition) process with a jacket glass of fluorine-doped quartz glass.
  • the preform thus obtained becomes an optical one
  • FIG. 4 shows schematically the structure of the fiber laser 1.
  • This comprises the active fiber 2, an excimer laser 3 which serves as a pump light source 2 and whose radiation is coupled via an optic 4 as a pump light frontally into the core of the active fiber 2.
  • the pumping light is coupled in through a first resonator mirror 5, which is arranged on the coupling surface of the fiber 2.
  • the amplified radiation 7 emerges from the coupling-out end of the active fiber 2 and is focused by means of a lens 8 onto a second resonator mirror 9. Depending on the position of the lens 8 or of the second resonator mirror 9, the focus results only for a specific wavelength on the resonator mirror 9. Because the resonator chamber is only stable for that radiation whose wavelength is one - - -
  • the lens 8, the coupling-out end of the active fiber 2 and / or the second resonator mirror 9 are displaced axially relative to one another along the optical axis 11.
  • the above-explained photoluminescence transitions Ü2 to Ü5 are excited in the active fiber 2. If the energy supply is sufficiently high, a population inversion will be generated and the relevant transition (Ü2 to Ü5) will be started in this way.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Glass Compositions (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne un système laser connu comprenant un milieu doté d'un matériau hôte en verre de quartz, une source de lumière de pompage agissant sur le milieu laser et un résonateur optique. L'invention vise à fournir un système laser peu onéreux comprenant un matériau laser à base de verre de quartz pouvant être défini dans une large plage de longueurs d'onde, facilement déformable, adapté à émettre de nouvelles fréquences laser jusque dans le domaine des ultraviolets et ayant par ailleurs le potentiel d'être utilisé dans un système laser à impulsion courte. A cet effet, le matériau hôte est un verre de quartz produit de manière synthétique et présentant une concentration de déficits en oxygène d'au moins 1 x 1016 cm-3 et une concentration d'hydrogène inférieure à 5 x 1016 molécules/cm3.
PCT/EP2012/063641 2011-07-19 2012-07-12 Système laser comprenant un milieu doté d'un matériau hôte en verre de quartz Ceased WO2013010896A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011107917.7 2011-07-19
DE201110107917 DE102011107917A1 (de) 2011-07-19 2011-07-19 Lasersystem, umfassend ein Lasermedium mit einem Wirtsmaterial aus Quarzglas

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WO2013010896A2 true WO2013010896A2 (fr) 2013-01-24
WO2013010896A3 WO2013010896A3 (fr) 2013-05-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4030204B1 (fr) 2021-01-19 2023-09-20 Heraeus Quarzglas GmbH & Co. KG Fibre optique microstructurée et préforme associée

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US4963755A (en) 1988-09-12 1990-10-16 The United States Of America As Represented By The Department Of Energy Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers
EP1580170A1 (fr) 2002-11-29 2005-09-28 Shin-Etsu Quartz Products Co., Ltd. Procede de production de verre de quartz synthetique et article en verre de quartz synthetique
DE102005042073A1 (de) 2005-08-31 2007-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Faserlaser

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