WO2018166802A3 - Beschichtetes produkt und verfahren zur herstellung - Google Patents
Beschichtetes produkt und verfahren zur herstellung Download PDFInfo
- Publication number
- WO2018166802A3 WO2018166802A3 PCT/EP2018/055020 EP2018055020W WO2018166802A3 WO 2018166802 A3 WO2018166802 A3 WO 2018166802A3 EP 2018055020 W EP2018055020 W EP 2018055020W WO 2018166802 A3 WO2018166802 A3 WO 2018166802A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- product
- surface layer
- manufacturing
- coated product
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020197027319A KR20190125349A (ko) | 2017-03-14 | 2018-03-01 | 코팅된 제품 및 제조방법 |
| CN201880016991.9A CN110418858A (zh) | 2017-03-14 | 2018-03-01 | 涂覆产品和生产方法 |
| JP2019550666A JP2020514552A (ja) | 2017-03-14 | 2018-03-01 | コーティングされた製品及びその製造方法 |
| EP18711237.0A EP3596247A2 (de) | 2017-03-14 | 2018-03-01 | Beschichtetes produkt und verfahren zur herstellung |
| US16/489,632 US11932937B2 (en) | 2017-03-14 | 2018-03-01 | Coated product and production method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017204257.5 | 2017-03-14 | ||
| DE102017204257.5A DE102017204257A1 (de) | 2017-03-14 | 2017-03-14 | Beschichtetes Produkt und Verfahren zur Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2018166802A2 WO2018166802A2 (de) | 2018-09-20 |
| WO2018166802A3 true WO2018166802A3 (de) | 2019-01-17 |
Family
ID=61655723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2018/055020 Ceased WO2018166802A2 (de) | 2017-03-14 | 2018-03-01 | Beschichtetes produkt und verfahren zur herstellung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11932937B2 (de) |
| EP (1) | EP3596247A2 (de) |
| JP (1) | JP2020514552A (de) |
| KR (1) | KR20190125349A (de) |
| CN (1) | CN110418858A (de) |
| DE (1) | DE102017204257A1 (de) |
| TW (1) | TWI776860B (de) |
| WO (1) | WO2018166802A2 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102761515B1 (ko) * | 2019-02-27 | 2025-02-04 | 삼성디스플레이 주식회사 | 증착원 증발 장치 및 그 제조방법 |
| CN116589284A (zh) * | 2023-05-20 | 2023-08-15 | 西北工业大学 | 一种高强高纯氮化硅坩埚及其制备方法和应用 |
| CN118084517A (zh) * | 2024-02-18 | 2024-05-28 | 阳泉银宇新材料有限责任公司 | 一种特种锂电池正极材料用匣钵及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239819A (en) * | 1978-12-11 | 1980-12-16 | Chemetal Corporation | Deposition method and products |
| JPH05263255A (ja) * | 1992-03-19 | 1993-10-12 | Hitachi Electron Eng Co Ltd | プラズマcvd装置 |
| US5300322A (en) * | 1992-03-10 | 1994-04-05 | Martin Marietta Energy Systems, Inc. | Molybdenum enhanced low-temperature deposition of crystalline silicon nitride |
| DE69630484T2 (de) * | 1995-06-09 | 2004-08-19 | Ebara Corp. | Reaktivgasinjektor für Vorrichtung zur chemischen Gasphasenabscheidung |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6047202B2 (ja) * | 1976-01-13 | 1985-10-21 | 東北大学金属材料研究所長 | 超硬高純度の配向多結晶質窒化珪素 |
| US4580524A (en) * | 1984-09-07 | 1986-04-08 | The United States Of America As Represented By The United States Department Of Energy | Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition |
| US5286565A (en) * | 1984-09-24 | 1994-02-15 | Air Products And Chemicals, Inc. | Oxidation resistant carbon and method for making same |
| US4741925A (en) | 1987-09-14 | 1988-05-03 | Gte Products Corporation | Method of forming silicon nitride coating |
| AU664824B1 (en) | 1989-09-11 | 1995-12-07 | Air Products And Chemicals Inc. | Oxidation resistant carbon and method for making same |
| DE3933039A1 (de) | 1989-10-04 | 1991-04-18 | Sintec Keramik Gmbh | Verfahren zur herstellung von oxidationsgeschuetzten cfc-formkoerpern |
| US5283089A (en) | 1989-11-13 | 1994-02-01 | Norton Company | Non-porous diffusion furnace components |
| JPH05296999A (ja) | 1992-04-24 | 1993-11-12 | Amano Pharmaceut Co Ltd | グルココルチコイドの効果判定マーカーとしてのヒトリポコルチンi及びその定量法 |
| EP0623571A4 (de) | 1992-11-26 | 1997-07-02 | Tonen Corp | Verfahren zur herstellung keramischer produkte. |
| US6284357B1 (en) | 1995-09-08 | 2001-09-04 | Georgia Tech Research Corp. | Laminated matrix composites |
| WO2007139142A1 (ja) | 2006-05-31 | 2007-12-06 | Tokyo Electron Limited | プラズマcvd方法、窒化珪素膜の形成方法、半導体装置の製造方法およびプラズマcvd装置 |
| CN101555014A (zh) | 2009-05-11 | 2009-10-14 | 福建丰力机械科技有限公司 | 组合式多晶硅提纯凝固坩埚 |
| CN102859049B (zh) | 2010-03-30 | 2016-01-20 | 瑞科斯太阳能源私人有限公司 | 制造半导体级硅晶锭的方法、可再使用的坩埚及其制造方法 |
| EP2714960B1 (de) * | 2011-06-03 | 2018-02-28 | Versum Materials US, LLC | Zusammensetzungen und verfahren zur ablagerung von kohlenstoffdotierten siliciumhaltigen filmen |
| CN102221293B (zh) * | 2011-06-08 | 2013-05-08 | 大连理工大学 | 一种熔炼坩埚用涂层的制备方法 |
| CN102515851B (zh) | 2011-12-26 | 2013-04-03 | 天津大学 | 一种多孔陶瓷表面氮化硅基涂层的制备方法 |
| CN103058696B (zh) | 2012-12-14 | 2015-04-29 | 西北工业大学 | 一种氮化硅基体的制备方法 |
| US9982345B2 (en) * | 2015-07-14 | 2018-05-29 | Applied Materials, Inc. | Deposition of metal films using beta-hydrogen free precursors |
| US10118828B2 (en) * | 2015-10-02 | 2018-11-06 | Asm Ip Holding B.V. | Tritertbutyl aluminum reactants for vapor deposition |
-
2017
- 2017-03-14 DE DE102017204257.5A patent/DE102017204257A1/de active Granted
-
2018
- 2018-03-01 CN CN201880016991.9A patent/CN110418858A/zh active Pending
- 2018-03-01 JP JP2019550666A patent/JP2020514552A/ja active Pending
- 2018-03-01 US US16/489,632 patent/US11932937B2/en active Active
- 2018-03-01 KR KR1020197027319A patent/KR20190125349A/ko not_active Ceased
- 2018-03-01 EP EP18711237.0A patent/EP3596247A2/de active Pending
- 2018-03-01 WO PCT/EP2018/055020 patent/WO2018166802A2/de not_active Ceased
- 2018-03-05 TW TW107107166A patent/TWI776860B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239819A (en) * | 1978-12-11 | 1980-12-16 | Chemetal Corporation | Deposition method and products |
| US5300322A (en) * | 1992-03-10 | 1994-04-05 | Martin Marietta Energy Systems, Inc. | Molybdenum enhanced low-temperature deposition of crystalline silicon nitride |
| JPH05263255A (ja) * | 1992-03-19 | 1993-10-12 | Hitachi Electron Eng Co Ltd | プラズマcvd装置 |
| DE69630484T2 (de) * | 1995-06-09 | 2004-08-19 | Ebara Corp. | Reaktivgasinjektor für Vorrichtung zur chemischen Gasphasenabscheidung |
Also Published As
| Publication number | Publication date |
|---|---|
| US11932937B2 (en) | 2024-03-19 |
| DE102017204257A1 (de) | 2018-09-20 |
| TW201839163A (zh) | 2018-11-01 |
| WO2018166802A2 (de) | 2018-09-20 |
| US20200024732A1 (en) | 2020-01-23 |
| CN110418858A (zh) | 2019-11-05 |
| EP3596247A2 (de) | 2020-01-22 |
| JP2020514552A (ja) | 2020-05-21 |
| KR20190125349A (ko) | 2019-11-06 |
| TWI776860B (zh) | 2022-09-11 |
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