WO2020021648A1 - Machine de nettoyage aux ultrasons de type à écoulement de liquide, buse associée et procédé de nettoyage aux ultrasons - Google Patents

Machine de nettoyage aux ultrasons de type à écoulement de liquide, buse associée et procédé de nettoyage aux ultrasons Download PDF

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Publication number
WO2020021648A1
WO2020021648A1 PCT/JP2018/027811 JP2018027811W WO2020021648A1 WO 2020021648 A1 WO2020021648 A1 WO 2020021648A1 JP 2018027811 W JP2018027811 W JP 2018027811W WO 2020021648 A1 WO2020021648 A1 WO 2020021648A1
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WO
WIPO (PCT)
Prior art keywords
ultrasonic
vibrator
nozzle
cleaning liquid
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/027811
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English (en)
Japanese (ja)
Inventor
智美 疋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Electronics Co Ltd
Original Assignee
Honda Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Electronics Co Ltd filed Critical Honda Electronics Co Ltd
Priority to PCT/JP2018/027811 priority Critical patent/WO2020021648A1/fr
Priority to KR1020197031862A priority patent/KR20200012835A/ko
Priority to JP2018553160A priority patent/JP6507358B1/ja
Priority to CN201880027560.2A priority patent/CN110730693A/zh
Publication of WO2020021648A1 publication Critical patent/WO2020021648A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0217—Use of a detergent in high pressure cleaners; arrangements for supplying the same
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
    • B08B2203/0288—Ultra or megasonic jets

Definitions

  • the present invention relates to a flowing-water type ultrasonic cleaner nozzle for ultrasonically cleaning an object to be cleaned by discharging a cleaning liquid to which ultrasonic waves are propagated as running water, a flowing-water type ultrasonic cleaner provided with the nozzle, and the cleaning machine.
  • the present invention relates to an ultrasonic cleaning method using the method.
  • FIG. 8 shows a nozzle 101 in a conventional flowing water type ultrasonic cleaning machine.
  • the nozzle main body 102 constituting the nozzle 101 has a tapered hollow portion 105 forming a part of a flow path 104 through which the cleaning liquid 103 flows.
  • a discharge port 106 for discharging the cleaning liquid 103 in the cavity 105 is provided at the tip of the cavity 105.
  • On the base end side of the cavity 105 a plate-shaped ultrasonic vibrator 107 formed by bonding a protective layer to a vibrator main body made of, for example, ceramic is arranged.
  • the ultrasonic vibrator 107 is driven, and the cleaning liquid 103 is introduced into the cavity 105 through the flow path 104.
  • the ultrasonic vibrator 107 is driven in a state where the inside of the cavity 105 is filled with the cleaning liquid 103, the ultrasonic vibrator 107 is It becomes a no-load operation and becomes an empty-fired state.
  • the adhesive is peeled off from the ultrasonic vibrator 107 due to the heat generated by the vibration, and the ultrasonic vibrator 107 is damaged in a very short time.
  • the present invention has been made in view of the above problems, and its purpose is to not only start ultrasonic waves almost simultaneously with the start of the supply of the cleaning liquid, but also to allow empty heating for a short time. It is an object of the present invention to provide a flowing water type ultrasonic cleaner nozzle and a flowing water type ultrasonic cleaner provided with the same. Another object of the present invention is to provide an ultrasonic cleaning method for efficiently and reliably cleaning a semiconductor wafer or a tool for manufacturing a semiconductor.
  • the invention according to claim 1 is a flowing water type ultrasonic cleaner nozzle for ultrasonically cleaning an object to be cleaned by discharging a cleaning liquid on which ultrasonic waves are superimposed as flowing water
  • a nozzle body having a tapered cavity forming a part of a flow path through which the cleaning liquid flows, and having a discharge port for discharging the cleaning liquid in the cavity at a distal end of the cavity, and a base end side of the cavity;
  • the cleaning liquid flowing through the gap between the outer surface of the vibrator and the inner wall surface of the cavity is discharged from the discharge port as flowing water
  • the cleaning liquid is supplied by the ultrasonic vibrator and the vibrator. Is superimposed on the ultrasonic wave.
  • most of the internal space of the cavity is filled in advance by the vibrator closely fixed to the ultrasonic vibrator, so that the cavity is filled with the cleaning liquid in a very short time after the start of inflow. Therefore, it is possible to start the ultrasonic wave almost simultaneously with the start of the supply of the cleaning liquid.
  • the vibrator closely attached to the ultrasonic vibrator becomes a load when vibrating, even if the ultrasonic vibrator is driven in a state where the inside of the cavity is not filled with the cleaning liquid, the empty firing is performed with no load. Does not generate heat in a short time. Therefore, for a short time, empty heating can be permitted. Since the vibrator is made of a nonmetallic inorganic material having chemical resistance, it is possible to select, for example, a highly corrosive cleaning liquid in order to increase the cleaning power.
  • the vibrating body is a solid body having a shape that becomes thinner toward a distal end side, and a base end surface of the vibrating body is formed of the front end surface of the ultrasonic vibrator.
  • the gist is that it is closely fixed to substantially the entirety.
  • the vibrator can be firmly adhered and fixed to the ultrasonic vibrator, and the vibration of the ultrasonic vibrator can be reliably and efficiently transmitted to the vibrator.
  • the vibrating body has a vibrating body main part having a cone shape.
  • the third aspect of the present invention it is easy to concentrate the ultrasonic wave on the tip of the vibrating body, and it is easy to form a gap having a substantially constant size with the inner wall surface of the tapered hollow portion.
  • the invention of claim 4 is the gist of any one of claims 1 to 3, wherein the vibrating body is made of quartz.
  • the vibrator is made of quartz, not only does it have suitable chemical resistance, but it can transmit ultrasonic waves efficiently.
  • the base end surface of the vibrator is bonded to the front end surface of the ultrasonic vibrator via a heat-resistant adhesive.
  • the gist is that it has been done.
  • the joint between the vibrating body and the ultrasonic vibrator is resistant to heat, so that the resistance to empty heating is improved.
  • the cleaning liquid can be smoothly guided to the discharge port through the gap.
  • the vibrating body occupies a volume of 60% or more and 95% or less of the internal space of the cavity. .
  • the vibrator while securing a certain flow rate of the cleaning liquid, the vibrator can reliably fill most of the internal space of the cavity and allow the vibrator to function as a sufficient load.
  • a nozzle according to any one of the first to seventh aspects, a cleaning liquid supply device configured to supply the cleaning liquid into the hollow portion of the nozzle, and the ultrasonic vibrator of the nozzle.
  • a running water type ultrasonic cleaner characterized by comprising an ultrasonic oscillator for driving the apparatus is provided.
  • the ultrasonic oscillator is driven by the ultrasonic oscillator in a state where the cleaning liquid is supplied into the cavity of the nozzle by the cleaning liquid supply device, so that the cleaning liquid on which the ultrasonic wave is superimposed flows from the nozzle. Can be ejected. Then, the object to be cleaned can be ultrasonically cleaned by applying the cleaning liquid that has become the running water to the object to be cleaned.
  • An invention according to claim 9 is a method for cleaning an object to be cleaned using the flowing water ultrasonic cleaner according to claim 8, wherein the object to be cleaned is a semiconductor wafer or a tool for manufacturing a semiconductor.
  • the gist of the present invention is an ultrasonic cleaning method, wherein the cleaning liquid is a foaming chemical liquid for cleaning the semiconductor wafer or the semiconductor manufacturing tool.
  • the ninth aspect of the present invention even when a foaming chemical solution suitable for cleaning a semiconductor wafer or a tool for manufacturing a semiconductor is used, ultrasonic waves can be reliably superimposed.
  • the object to be cleaned can be efficiently and reliably cleaned by both of these functions.
  • the ultrasonic wave be started almost simultaneously with the start of the supply of the cleaning liquid, but also it is possible to allow empty heating for a short time. It is possible to provide a flowing water type ultrasonic cleaner nozzle and a flowing water type ultrasonic cleaner provided with the nozzle. According to a ninth aspect of the present invention, there is provided an ultrasonic cleaning method for efficiently and reliably cleaning a semiconductor wafer or a tool for manufacturing a semiconductor.
  • FIG. 3 is a perspective view showing a vibrating body provided in the nozzle.
  • FIG. 2 is a block diagram for explaining an electrical configuration and the like in the flowing water type ultrasonic cleaner according to the embodiment.
  • Sectional drawing which shows the principal part which shows the flowing water type ultrasonic cleaner nozzle of another embodiment.
  • Sectional drawing which shows the principal part which shows the flowing water type ultrasonic cleaner nozzle of another embodiment.
  • FIG. 1 is a cross-sectional view of a main portion showing a nozzle 11 of a flowing water type ultrasonic cleaner according to the present embodiment.
  • the nozzle 11 is a component of a flowing water type ultrasonic cleaning machine 1 which is an apparatus for ultrasonically cleaning a silicon wafer (semiconductor wafer) 2 as an object to be cleaned. It plays the role of discharging as running water.
  • a nozzle body 12 constituting a nozzle 11 is a member formed in a cylindrical shape with a bottom, and a cap 13 for sealing an opening at a rear end (upper end in FIG. 1). Is screwed.
  • the nozzle body 12 has a tapered hollow portion 14 that forms a part of a flow path R1 through which the cleaning liquid W1 flows. Further, the nozzle body 12 has a discharge port 15 for discharging the cleaning liquid W1 in the hollow portion 14 at the tip of the hollow portion 14.
  • the material for forming the nozzle body 12 is not particularly limited as long as it is a material having chemical resistance and heat resistance, but a fluororesin (PTFE or the like) is used here.
  • a supply port 16 protrudes from a side surface of the hollow portion 14, and a supply pipe 17 is connected to the supply port 16. The cleaning liquid W1 is supplied to the internal space 18 of the cavity 14 via the supply pipe 17 and the supply port 16.
  • the nozzle 11 includes an ultrasonic vibrator 31 and a vibrator 41 in the nozzle body 12.
  • the ultrasonic vibrator 31 of the present embodiment is a so-called solid element formed in the shape of a disc having a diameter of 20 mm using piezoelectric ceramics such as PZT, and has a relatively high frequency of 200 kHz or more (here, 1 MHz). Is configured to occur.
  • a pair of electrodes (not shown) is formed on the upper end surface 31a side of the ultrasonic transducer 31, and wirings 23 constituting the power supply cable 22 are electrically connected to the electrodes.
  • the power supply cable 22 passes through the center of the cap 13 and is drawn out of the nozzle 11.
  • the ultrasonic vibrator 31 of the present embodiment includes the vibrator 41.
  • the vibrating body 41 is a solid body having a shape that becomes thinner toward the distal end side.
  • a vibrating body main portion 42 having a substantially conical shape and a bottom portion of the vibrating body main portion 42 are provided.
  • a disk-shaped flange 43 provided.
  • the diameter of the flange portion 43 is equal to the diameter of the ultrasonic transducer 31 and is 20 mm ⁇ here.
  • the vibrator 41 is fixedly attached to the ultrasonic vibrator 31. More specifically, the base end face 41b of the vibrator 41 is firmly bonded to the entire lower end face 31b (front end face) of the ultrasonic transducer 31 via the heat-resistant adhesive 47. As a result, the vibrating body 41 vibrates integrally with the ultrasonic vibrator 31.
  • the vibrating body 41 plays a role as a load during vibration. When such a load is provided, there is an advantage that a change in impedance is reduced as compared with a case where the ultrasonic transducer 31 and the cleaning liquid W1 are in direct contact.
  • the vibrator 41 of the present embodiment is made of a nonmetallic inorganic material having chemical resistance and heat resistance, and is made of quartz here. Quartz is suitable as a material for forming the vibrating body 41 because quartz has good chemical resistance and heat resistance and can transmit ultrasonic waves efficiently.
  • “chemical resistance” means that corrosion or the like does not occur even when the silicon wafer 2 is exposed to a strongly acidic or strongly alkaline chemical solution used for cleaning.
  • the term "heat resistance” used herein refers to, for example, corrosion, melting, denaturation, etc., even when the above-mentioned strongly acidic or strongly alkaline chemical solution is heated to 100 ° C. or more (preferably 150 ° C. or more). Does not occur.
  • Examples of the strongly acidic or strongly alkaline chemical solution used as the cleaning solution W1 for cleaning the silicon wafer 2 include a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of hydrochloric acid and hydrogen peroxide, and a mixed solution of hydrofluoric acid and hydrogen peroxide. And a mixed solution of ammonia and hydrogen peroxide, and these have foaming properties.
  • a mixture of sulfuric acid and hydrogen peroxide, which are strongly acidic chemicals, is used as the cleaning liquid W1.
  • a step portion 19 is formed on the inner wall surface of the hollow portion 14 of the nozzle body 12 just above the supply port 16, and a vibrating body 41 is provided near the step portion 19.
  • the ultrasonic transducer 31 provided on the lower side is arranged. More specifically, a ring-shaped packing 21 is disposed on the step portion 19, and the lower end surface of the ultrasonic transducer 31 is provided on the packing 21 via the flange portion 43 of the vibrator 41. The outer peripheral portion on the 31b side is placed.
  • a sleeve-shaped pressing portion 13 a forming a part of the cap 13 is in contact with the outer peripheral portion on the upper end surface 31 a side of the ultrasonic transducer 31.
  • the ultrasonic vibrator 31 and the vibrating body 41 are held and fixed in a state where the ultrasonic vibrator 31 and the vibrating body 41 are sandwiched between the packing 21 and the pressing portion 13a from above and below.
  • the ultrasonic transducer 31 is arranged on the base end side of the cavity 14.
  • the vibrating body 41 occupies a half or more of the volume of the internal space 18 of the hollow portion 14, and preferably occupies a volume of 60% to 95% of the internal space. Good to be. If the occupied volume ratio is too small, not only is it difficult to sufficiently exert the function as a load, but also it is impossible to reliably fill most of the internal space 18 of the cavity 14 with the vibrating body 41, It becomes difficult to fill the interior space 18 with the cleaning liquid W1 within a very short time from the start of inflow. Conversely, if the occupied volume ratio is too large, the gap 46 between the outer surface of the vibrating body 41 and the inner wall surface of the cavity 14 becomes narrower, and the flow of the cleaning liquid W1 becomes difficult.
  • the flow rate of the cleaning liquid W1 is secured. It may not be possible.
  • the occupied volume ratio is set to about 70%.
  • a gap 46 having a size of approximately several mm and a substantially constant size is secured between the outer surface of the vibrating body 41 and the inner wall surface of the cavity 14. Then, the cleaning liquid W1 can flow through the gap 46.
  • FIG. 3 is a block diagram for explaining an electrical configuration and the like in the flowing water type ultrasonic cleaner 1 of the present embodiment.
  • the running water type ultrasonic cleaning machine 1 includes a cleaning liquid supply device 51, an ultrasonic oscillator 61, and an ultrasonic control device 62.
  • the cleaning liquid supply device 51 has a cleaning liquid tank 52 for storing the cleaning liquid W1, and a pump 53 connected to the cleaning liquid tank 52.
  • the cleaning liquid supply device 51 is connected to the supply port 16 of the nozzle 11 via the supply pipe 17. By driving the pump 53, the cleaning liquid W1 in the cleaning liquid tank 52 is supplied to the internal space 18 of the cavity 14 of the nozzle 11.
  • the ultrasonic oscillator 61 is electrically connected to the ultrasonic transducer 31 provided on the nozzle 11 via the power supply cable 22.
  • the ultrasonic oscillator 61 drives the ultrasonic transducer 31 by outputting a drive signal having a predetermined oscillation frequency (here, 1 MHz).
  • a predetermined oscillation frequency here, 1 MHz.
  • the ultrasonic controller 62 is constituted by a known computer including a CPU 63, a ROM 64, a RAM 65, and the like, and controls the ultrasonic oscillator 61 and the pump 53.
  • FIG. 4 is a schematic perspective view for explaining an installation state when the nozzle 11 is used. As shown in FIG. 4, the nozzle 11 is installed so as to face obliquely downward above the vicinity of the outer peripheral portion of the silicon wafer 2 to be cleaned, and is fixed to a nozzle support (not shown). You.
  • the ultrasonic cleaning method using the flowing water ultrasonic cleaning machine 1 is as follows. With the nozzle 11 installed as described above, a start switch (not shown) is turned on, and the flowing water type ultrasonic cleaner 1 is operated. Then, the ultrasonic oscillator 61 starts operating according to the control signal from the ultrasonic control device 62, and outputs a drive signal to the ultrasonic transducer 31. As a result, the ultrasonic vibrator 31 ultrasonically vibrates, and the vibrating body 41 that is tightly fixed to the ultrasonic vibrator 31 also ultrasonically vibrates integrally therewith.
  • the pump 53 starts operating according to a control signal from the ultrasonic control device 62, and sends the cleaning liquid W ⁇ b> 1 in the cleaning liquid tank 52 toward the nozzle 11 under pressure. Then, the cleaning liquid W ⁇ b> 1 that has entered the cavity 14 from the supply port 16 of the nozzle 11 flows through the gap 46 between the outer surface of the vibrator 41 and the inner wall surface of the cavity 14, and the discharge port 15 on the tip end side of the nozzle 11. Move towards. Then, at the time of the movement, the ultrasonic waves are superposed on the cleaning liquid W1 by the vibrating body 41 that ultrasonically vibrates.
  • the cleaning liquid W1 on which the ultrasonic waves are superposed is discharged as flowing water from the discharge port 15, and the surface of the silicon wafer 2 thereunder is exposed to the cleaning liquid W1 to perform ultrasonic cleaning.
  • the flow rate from the tip of the nozzle 11 is not particularly limited, and is appropriately set according to the size and type of the object to be cleaned. In the present embodiment, the flow rate is, for example, about 0.1 L / min to 0.5 L / min. Is set to
  • the cleaning liquid W1 flowing through the gap 46 between the outer surface of the vibrator 41 and the inner wall surface of the cavity 14 is discharged from the discharge port 15 as flowing water. Then, at the time of the ejection, the ultrasonic wave is superimposed on the cleaning liquid W1 by the ultrasonic vibrator 31 and the vibrator 41. In this case, most of the internal space 18 of the cavity 14 is buried in advance by the vibrator 41 fixedly attached to the ultrasonic transducer 31. It is filled with the cleaning liquid W1. Therefore, it is possible to start the ultrasonic wave almost simultaneously with the start of the supply of the cleaning liquid W1.
  • the vibrator 41 closely fixed to the ultrasonic vibrator 31 becomes a load when vibrating, even if the ultrasonic vibrator 31 is driven in a state where the inside of the cavity 14 is not filled with the cleaning liquid W1, no load is applied. Does not generate heat in a short time as compared to when it is fired in the air. Therefore, for a short time, empty heating can be permitted. Since the vibrating body 41 is made of a nonmetallic inorganic material having chemical resistance and heat resistance, it is possible to use, for example, a highly corrosive cleaning liquid W1 in a heated state in order to increase the cleaning power. Become.
  • the present embodiment not only the use of the foaming chemical solution for cleaning the semiconductor becomes possible, but also the amount of use thereof can be reduced, so that the cleaning cost can be reduced. Further, since the amount of waste liquid can be reduced, there is an advantage that the influence on the environment is small.
  • the vibrating body 41 is a solid body having a shape that becomes thinner toward the distal end side, and the base end face 41 b of the vibrating body 41 is substantially the same as the lower end face 31 b of the ultrasonic vibrator 31. Closely fixed. Accordingly, the vibrator 41 can be firmly fixed to the ultrasonic vibrator 31 and the vibration of the ultrasonic vibrator 31 can be transmitted to the vibrator 41 reliably and efficiently.
  • the vibrating body 41 has the vibrating body main portion 42 in the shape of a cone. For this reason, while making it easy to concentrate an ultrasonic wave on the front-end
  • the base end face 41 b of the vibrating body 41 is bonded to the lower end face 31 b of the ultrasonic vibrator 31 via the heat-resistant adhesive 47. Therefore, since the joint between the vibrating body 41 and the ultrasonic vibrator 31 is resistant to heat, the resistance to empty heating is improved, and the ultrasonic vibrator 31 is hardly damaged.
  • the cleaning liquid W1 can be smoothly guided to the discharge port 15 through the gap 46 even when the relatively large vibrator 41 is used. Can be.
  • a relatively large vibrator 41 occupying a volume of 60% or more and 95% or less of the internal space 18 of the hollow portion 14 is used, the flow rate of the cleaning liquid W1 is secured to some extent. 41 can reliably fill most of the internal space 18 and allow the vibrating body 41 to function as a sufficient load.
  • the object to be cleaned is the silicon wafer 2, and the ultrasonic cleaning is performed using the foaming chemical solution suitable for cleaning the silicon wafer 2 as the cleaning liquid W1. ing. Even in this case, since the ultrasonic wave can be reliably superimposed on the foaming chemical solution, the silicon wafer 2 can be efficiently and reliably cleaned by both the chemical action and the physical action.
  • the nozzle 11 of the above-described embodiment has the vibrating body main portion 42 having a substantially conical shape.
  • the substantially conical shape for example, a substantially triangular pyramid, a substantially quadrangular pyramid, a substantially hexagonal pyramid, a substantially eight
  • the vibrating body main portion 42 having a pyramid shape such as a pyramid may of course be provided.
  • the vibrating body 41 has the vibrating body main part 42 having a substantially conical shape, but the shape of the vibrating body main part 42 is not limited to this.
  • it may be shaped like the nozzle 11A of another embodiment shown in FIG.
  • the base-side half of the vibrating body main part 42A has a cylindrical shape, and the distal-side half has a substantially conical shape.
  • the gap 46 has a constant size further than in the above embodiment.
  • it may be shaped like the nozzle 11B of another embodiment shown in FIG.
  • the base-side half of the vibrating body main part 42B has a cylindrical shape, and the distal-side half has a hemispherical shape. Furthermore, it may be shaped like the nozzle 11C of another embodiment shown in FIG. In the case of the vibrating body 41C of the nozzle 11C, the vibrating body main portion 42C is formed in a stepped shape, and becomes thinner toward the tip end.
  • the vibrating body 41 has the flange portion 43, but the flange portion 43 is not an essential structure and may be omitted.
  • the vibrating body 41 is made of quartz.
  • the vibrating body 41 may be formed by using a mineral material other than quartz (for example, sapphire) instead of quartz.
  • the vibrating body 41 may be formed using a ceramic material (for example, alumina, titania, silica, silicon carbide, or the like) which is a nonmetallic inorganic material other than the mineral-based material.
  • the base end surface 41b of the vibrator 41 and the lower end surface 31b of the ultrasonic vibrator 31 are joined by using the heat-resistant adhesive 47, but they are joined by an adhesive other than the heat-resistant adhesive 47. May be. Alternatively, it is a matter of course that these may be joined by a method other than adhesion using an adhesive.
  • the ultrasonic cleaning of the silicon wafer 2 was performed using a foaming chemical as the cleaning liquid W1, but the ultrasonic cleaning may be performed using a non-foaming chemical (eg, ultrapure water).
  • a foaming chemical e.g, ultrapure water
  • the example in which the ultrasonic cleaning of the silicon wafer 2 is performed using the flowing water ultrasonic cleaning machine 1 has been described.
  • a semiconductor manufacturing tool such as a dicing blade is used. Ultrasonic cleaning may be performed.
  • the object to be cleaned is not limited to a plate-like object such as the silicon wafer 2 or a dicing blade, but may be of various shapes.

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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

L'invention concerne une buse d'une machine de nettoyage aux ultrasons de type à écoulement de liquide qui est capable d'initier des ondes ultrasonores presque simultanément avec l'alimentation de démarrage d'un liquide de nettoyage et qui peut permettre une courte période de chauffage sans liquide. Cette buse (11) d'une machine de nettoyage de type liquide s'écoulant évacue un liquide de nettoyage (W1), sur lequel des ondes ultrasonores ont été superposées, sous la forme d'un flux et nettoie par ultrasons un objet (2). La buse est pourvue d'un corps de buse principal (12), d'un vibreur ultrasonore en forme de plaque (31), et d'un corps vibrant 41. Le corps de buse principal (12) a : une cavité conique (14) qui forme une partie d'un canal d'écoulement (R1) à travers lequel s'écoule le liquide de nettoyage (W1); et un orifice de décharge (15) pour décharger le liquide de nettoyage (W1) dans la cavité (14). Le vibreur ultrasonore en forme de plaque (31) est disposé sur le côté d'extrémité de base de la cavité (14). Le corps vibrant (41) comprend un matériau inorganique non métallique chimiquement résistant. Le corps vibrant (41) est fermement fixé à la face d'extrémité avant (31b) du vibreur ultrasonore (31) et occupe au moins la moitié du volume de l'espace interne (18) de la cavité (14). Le liquide de nettoyage (W1) s'écoule dans l'espace (46) entre la surface extérieure du corps vibrant (41) et la surface de paroi interne de la cavité (14).
PCT/JP2018/027811 2018-07-25 2018-07-25 Machine de nettoyage aux ultrasons de type à écoulement de liquide, buse associée et procédé de nettoyage aux ultrasons Ceased WO2020021648A1 (fr)

Priority Applications (4)

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PCT/JP2018/027811 WO2020021648A1 (fr) 2018-07-25 2018-07-25 Machine de nettoyage aux ultrasons de type à écoulement de liquide, buse associée et procédé de nettoyage aux ultrasons
KR1020197031862A KR20200012835A (ko) 2018-07-25 2018-07-25 유수식 초음파 세정기 및 그 노즐, 초음파 세정 방법
JP2018553160A JP6507358B1 (ja) 2018-07-25 2018-07-25 流水式超音波洗浄機及びそのノズル、超音波洗浄方法
CN201880027560.2A CN110730693A (zh) 2018-07-25 2018-07-25 水流式超声波清洗机及其喷头、超声波清洗方法

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JP7088461B1 (ja) * 2021-04-16 2022-06-21 守 笹川 超音波洗浄装置

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KR102446082B1 (ko) * 2020-08-12 2022-09-23 한국기계연구원 초음파를 이용한 유체 분사 모듈
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JP7282472B2 (ja) * 2020-09-28 2023-05-29 株式会社カイジョー 超音波シャワー洗浄装置
CN113996593B (zh) * 2021-11-15 2024-06-21 东莞市佳源达科技有限公司 一种用于半导体表面清洁的超声波清洗装置

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