WO2026062995A1 - Corps assemblé et dispositif de fabrication de semi-conducteur - Google Patents

Corps assemblé et dispositif de fabrication de semi-conducteur

Info

Publication number
WO2026062995A1
WO2026062995A1 PCT/JP2025/023399 JP2025023399W WO2026062995A1 WO 2026062995 A1 WO2026062995 A1 WO 2026062995A1 JP 2025023399 W JP2025023399 W JP 2025023399W WO 2026062995 A1 WO2026062995 A1 WO 2026062995A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding layer
metal
interface region
ceramic
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2025/023399
Other languages
English (en)
Japanese (ja)
Inventor
智雄 田中
修 吉本
利之 桜井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
Niterra Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Niterra Co Ltd filed Critical Niterra Co Ltd
Priority to KR1020257039929A priority Critical patent/KR20260042070A/ko
Publication of WO2026062995A1 publication Critical patent/WO2026062995A1/fr
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Un corps assemblé comprend : un premier élément formé d'une céramique ; un second élément formé d'une céramique ou d'un métal ; et une couche de jonction, disposée entre le premier élément et le second élément, qui contient soit In (indium) soit Sn (étain) en tant que composant principal et contient l'un quelconque parmi Ti (titane), Hf (hafnium) et Zr (zirconium). La couche de jonction comprend un composé contenant l'un quelconque parmi Ti, Hf et Zr. Dans une section transversale le long de la direction de stratification dans laquelle le premier élément, la couche de jonction et le second élément sont stratifiés, le rapport de surface occupé par le composé dans une première région d'interface formée entre le premier élément et la couche de jonction est de 6 à 60%.
PCT/JP2025/023399 2024-09-18 2025-06-30 Corps assemblé et dispositif de fabrication de semi-conducteur Pending WO2026062995A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257039929A KR20260042070A (ko) 2024-09-18 2025-06-30 접합체 및 반도체 제조 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024-160641 2024-09-18
JP2024160641A JP2026055165A (ja) 2024-09-18 2024-09-18 接合体および半導体製造装置

Publications (1)

Publication Number Publication Date
WO2026062995A1 true WO2026062995A1 (fr) 2026-03-26

Family

ID=99168472

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2025/023399 Pending WO2026062995A1 (fr) 2024-09-18 2025-06-30 Corps assemblé et dispositif de fabrication de semi-conducteur

Country Status (3)

Country Link
JP (1) JP2026055165A (fr)
KR (1) KR20260042070A (fr)
WO (1) WO2026062995A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195893A (ja) * 1987-10-08 1989-04-13 Seiko Instr & Electron Ltd ろう材
JPH08279550A (ja) * 1995-04-07 1996-10-22 Souzou Kagaku:Kk 静電チャック
JPH09108886A (ja) * 1995-10-11 1997-04-28 Miyata R Andeii:Kk 部材の接合構造
JP2019025540A (ja) * 2017-07-25 2019-02-21 有限会社 ナプラ 金属粒子および接合構造部
WO2022049878A1 (fr) * 2020-09-02 2022-03-10 日本特殊陶業株式会社 Corps assemblé, dispositif de support et mandrin électrostatique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195893A (ja) * 1987-10-08 1989-04-13 Seiko Instr & Electron Ltd ろう材
JPH08279550A (ja) * 1995-04-07 1996-10-22 Souzou Kagaku:Kk 静電チャック
JPH09108886A (ja) * 1995-10-11 1997-04-28 Miyata R Andeii:Kk 部材の接合構造
JP2019025540A (ja) * 2017-07-25 2019-02-21 有限会社 ナプラ 金属粒子および接合構造部
WO2022049878A1 (fr) * 2020-09-02 2022-03-10 日本特殊陶業株式会社 Corps assemblé, dispositif de support et mandrin électrostatique

Also Published As

Publication number Publication date
KR20260042070A (ko) 2026-03-30
JP2026055165A (ja) 2026-03-31

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