AP2180A - Group I-III-VI quaternary or higher alloy semiconductor films. - Google Patents

Group I-III-VI quaternary or higher alloy semiconductor films.

Info

Publication number
AP2180A
AP2180A AP2006003507A AP2006003507A AP2180A AP 2180 A AP2180 A AP 2180A AP 2006003507 A AP2006003507 A AP 2006003507A AP 2006003507 A AP2006003507 A AP 2006003507A AP 2180 A AP2180 A AP 2180A
Authority
AP
ARIPO
Prior art keywords
quaternary
iii
group
semiconductor films
alloy semiconductor
Prior art date
Application number
AP2006003507A
Other languages
English (en)
Other versions
AP2006003507A0 (en
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AP2180(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Publication of AP2006003507A0 publication Critical patent/AP2006003507A0/xx
Application granted granted Critical
Publication of AP2180A publication Critical patent/AP2180A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Particle Accelerators (AREA)
AP2006003507A 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films. AP2180A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051459 WO2005017979A2 (en) 2003-08-14 2004-08-13 Group i-iii-vi quaternary or higher alloy semiconductor films

Publications (2)

Publication Number Publication Date
AP2006003507A0 AP2006003507A0 (en) 2006-02-28
AP2180A true AP2180A (en) 2010-11-29

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
AP2006003507A AP2180A (en) 2003-08-14 2004-08-13 Group I-III-VI quaternary or higher alloy semiconductor films.
AP2006003508A AP2149A (en) 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Family Applications After (1)

Application Number Title Priority Date Filing Date
AP2006003508A AP2149A (en) 2003-08-14 2004-08-13 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films.

Country Status (19)

Country Link
US (3) US7682939B2 (de)
EP (3) EP1654769B2 (de)
JP (2) JP4994032B2 (de)
KR (2) KR101004452B1 (de)
AP (2) AP2180A (de)
AT (1) ATE510304T2 (de)
AU (2) AU2004301075B2 (de)
BR (2) BRPI0413567A (de)
CA (2) CA2535703C (de)
CY (1) CY1111940T1 (de)
DE (1) DE202004021800U1 (de)
DK (1) DK1654769T4 (de)
EA (2) EA010171B1 (de)
EG (1) EG25410A (de)
ES (1) ES2366888T5 (de)
IL (2) IL173694A0 (de)
MX (2) MXPA06001726A (de)
OA (2) OA13236A (de)
WO (2) WO2005017978A2 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
MX2008008977A (es) * 2006-01-12 2008-12-19 Heliovolt Corp Metodos de elaboracion de estructuras de dominios de fases segregadas controladas.
US20080057203A1 (en) * 2006-06-12 2008-03-06 Robinson Matthew R Solid group iiia particles formed via quenching
DE102006055662B3 (de) * 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
WO2008121997A2 (en) * 2007-03-30 2008-10-09 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
WO2009017172A1 (ja) * 2007-08-02 2009-02-05 Showa Shell Sekiyu K. K. Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
US8258001B2 (en) * 2007-10-26 2012-09-04 Solopower, Inc. Method and apparatus for forming copper indium gallium chalcogenide layers
US8779283B2 (en) * 2007-11-29 2014-07-15 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP4620105B2 (ja) * 2007-11-30 2011-01-26 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の製造方法
KR101447113B1 (ko) * 2008-01-15 2014-10-07 삼성전자주식회사 화합물 반도체 수직 적층 이미지 센서
US20090215224A1 (en) * 2008-02-21 2009-08-27 Film Solar Tech Inc. Coating methods and apparatus for making a cigs solar cell
DE102008024230A1 (de) * 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
EP2144026B1 (de) † 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) * 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
CN102471061B (zh) * 2009-09-04 2014-09-24 大阳日酸株式会社 太阳能电池用硒化氢混合气体的供给方法以及供给装置
TW201124544A (en) * 2009-11-24 2011-07-16 Applied Quantum Technology Llc Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
KR20110060139A (ko) * 2009-11-30 2011-06-08 삼성전자주식회사 태양 전지 제조 방법
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
TWI411121B (zh) * 2010-03-11 2013-10-01 Ind Tech Res Inst 光吸收層之製造方法及應用其之太陽能電池結構
EP2548218A1 (de) 2010-03-17 2013-01-23 Dow Global Technologies LLC Auf chalcogenid basierende materialien und verbesserte verfahren zur herstellung derartiger materialien
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
JP2013529378A (ja) * 2010-04-19 2013-07-18 韓国生産技術研究院 太陽電池の製造方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
KR20130100907A (ko) * 2010-04-30 2013-09-12 다우 글로벌 테크놀로지스 엘엘씨 칼코게나이드계 태양광발전 셀의 제조 방법
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
KR20110128580A (ko) 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 제조 방법
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
WO2012023519A1 (ja) 2010-08-17 2012-02-23 凸版印刷株式会社 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、およびその太陽電池の製造方法
JP2012079997A (ja) * 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
JP5451899B2 (ja) * 2010-11-22 2014-03-26 京セラ株式会社 光電変換装置
JP2012160514A (ja) * 2011-01-31 2012-08-23 Kyocera Corp 金属カルコゲナイド層の製造方法および光電変換装置の製造方法
EA020377B1 (ru) * 2011-05-12 2014-10-30 Общество С Ограниченной Ответственностью "Изовак" Способ формирования тонких пленок cigs для солнечных батарей и устройство для его реализации
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2013021231A (ja) * 2011-07-13 2013-01-31 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
WO2013089630A1 (en) * 2011-12-15 2013-06-20 Midsummer Ab Recycling of copper indium gallium diselenide
US20130344646A1 (en) * 2011-12-21 2013-12-26 Intermolecular, Inc. Absorbers for High-Efficiency Thin-Film PV
DE102012205378A1 (de) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule
ITFI20120090A1 (it) * 2012-05-10 2013-11-11 Advanced Res On Pv Tech S R L Processo per la produzione di celle solari a film sottili
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
WO2014064823A1 (ja) * 2012-10-26 2014-05-01 株式会社日立製作所 半導体膜の製造方法、太陽電池及びカルコパイライト化合物
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9768015B2 (en) * 2015-06-11 2017-09-19 Alliance For Sustainable Energy, Llc Methods of forming CIGS films
US11881536B2 (en) 2018-02-16 2024-01-23 Newsouth Innovations Pty Limited Adamantine semiconductor and uses thereof
KR102015985B1 (ko) * 2018-04-17 2019-08-29 한국과학기술연구원 태양전지용 cigs 박막의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555615A (ja) * 1991-08-28 1993-03-05 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
US5436204A (en) 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
US5674555A (en) 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
JPH1012635A (ja) * 1996-04-26 1998-01-16 Yazaki Corp Ｉ−ｉｉｉ−ｖｉ２系薄膜層の形成方法及びその形成装置
JP2922466B2 (ja) 1996-08-29 1999-07-26 時夫 中田 薄膜太陽電池
US5985691A (en) 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
JP4177480B2 (ja) 1998-05-15 2008-11-05 インターナショナル ソーラー エレクトリック テクノロジー，インコーポレイテッド 化合物半導体フィルムおよび関連電子装置の製造方法
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
AU2249201A (en) 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
US20030008493A1 (en) * 2001-07-03 2003-01-09 Shyh-Dar Lee Interconnect structure manufacturing

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Chashi D et al. Solar Energy/Materials and Solar Cells *
Turco M. et al: Journal of Applied Physics, Vol.91 No. 3 *

Also Published As

Publication number Publication date
BRPI0413572A (pt) 2006-10-17
EA200600406A1 (ru) 2006-08-25
US20070004078A1 (en) 2007-01-04
MXPA06001723A (es) 2007-04-25
US8735214B2 (en) 2014-05-27
JP2007502247A (ja) 2007-02-08
AP2006003507A0 (en) 2006-02-28
JP2007503708A (ja) 2007-02-22
OA13236A (en) 2006-12-13
EA009012B1 (ru) 2007-10-26
CY1111940T1 (el) 2015-11-04
US20060222558A1 (en) 2006-10-05
WO2005017978A3 (en) 2005-10-13
KR101027318B1 (ko) 2011-04-06
US7744705B2 (en) 2010-06-29
AP2149A (en) 2010-09-01
AU2004301076A1 (en) 2005-02-24
EA200600407A1 (ru) 2006-08-25
ES2366888T5 (es) 2018-05-17
JP4994032B2 (ja) 2012-08-08
CA2535703A1 (en) 2005-02-24
KR101004452B1 (ko) 2010-12-28
CA2539556A1 (en) 2005-02-24
EP1654769B2 (de) 2018-02-07
AU2004301075B2 (en) 2009-10-08
ES2366888T3 (es) 2011-10-26
KR20060082075A (ko) 2006-07-14
CA2539556C (en) 2010-10-26
HK1097105A1 (zh) 2007-06-15
AP2006003508A0 (en) 2006-02-28
EP1654751A2 (de) 2006-05-10
EA010171B1 (ru) 2008-06-30
IL173693A0 (en) 2006-07-05
MXPA06001726A (es) 2007-05-04
AU2004301076B2 (en) 2009-11-05
AU2004301075A1 (en) 2005-02-24
KR20060058717A (ko) 2006-05-30
EG25410A (en) 2012-01-02
WO2005017979A3 (en) 2006-06-01
OA13237A (en) 2006-12-13
DE202004021800U1 (de) 2011-04-21
BRPI0413567A (pt) 2006-10-17
DK1654769T4 (en) 2018-05-22
DK1654769T3 (da) 2011-09-12
JP4864705B2 (ja) 2012-02-01
IL173693A (en) 2014-01-30
EP1654769B1 (de) 2011-05-18
CA2535703C (en) 2011-04-19
WO2005017978A2 (en) 2005-02-24
EP1654769A2 (de) 2006-05-10
US7682939B2 (en) 2010-03-23
ATE510304T2 (de) 2011-06-15
US20100190292A1 (en) 2010-07-29
EP2284905A2 (de) 2011-02-16
WO2005017979A2 (en) 2005-02-24
IL173694A0 (en) 2006-07-05

Similar Documents

Publication Publication Date Title
AP2180A (en) Group I-III-VI quaternary or higher alloy semiconductor films.
SG116534A1 (en) Turbine element.
GB2415202B (en) An Al-Zn-Mg-Cu alloy
IL155867A0 (en) Solar tracking system
AU2003299900A8 (en) Internet-based messaging system
GB0305175D0 (en) Navigator 2.0 features
AU2003286867A8 (en) E.x.o. rimwear
AU2003235106A1 (en) Semiconductor memory
EP1548469A4 (de) Antireflexfilm
MXPA03007695A (es) Placa de teclas.
AU2003235412A1 (en) Claw-pole type generator
ZA200301246B (en) Three-dimensional apertured films.
MXPA03003376A (es) Celda.
AP2006003524A0 (en) Photovoltaic cell.
AU2003235414A1 (en) Claw-pole type generator
AU2003227363A1 (en) Semiconductor memory
ZA200206269B (en) Motorcycle structure.
ZA200602141B (en) Photovoltaic element
ZA200210368B (en) Diving fins.
ZA200405563B (en) Alloys.
ZA200409663B (en) Tee.
ZA200305758B (en) Raft foundation.
ZA200207788B (en) An embrocation.
ZA200307137B (en) Storage facility.
ZA200406179B (en) Frame.