AT395272B - Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat - Google Patents

Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat Download PDF

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Publication number
AT395272B
AT395272B AT0318985A AT318985A AT395272B AT 395272 B AT395272 B AT 395272B AT 0318985 A AT0318985 A AT 0318985A AT 318985 A AT318985 A AT 318985A AT 395272 B AT395272 B AT 395272B
Authority
AT
Austria
Prior art keywords
type
epitaxial layer
zone
impurity concentration
vertical
Prior art date
Application number
AT0318985A
Other languages
German (de)
English (en)
Other versions
ATA318985A (de
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA318985A publication Critical patent/ATA318985A/de
Application granted granted Critical
Publication of AT395272B publication Critical patent/AT395272B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
AT0318985A 1984-11-05 1985-11-05 Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat AT395272B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59232870A JPH0638476B2 (ja) 1984-11-05 1984-11-05 半導体装置

Publications (2)

Publication Number Publication Date
ATA318985A ATA318985A (de) 1992-03-15
AT395272B true AT395272B (de) 1992-11-10

Family

ID=16946115

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0318985A AT395272B (de) 1984-11-05 1985-11-05 Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat

Country Status (10)

Country Link
JP (1) JPH0638476B2 (ja)
KR (1) KR940005447B1 (ja)
CN (1) CN1004845B (ja)
AT (1) AT395272B (ja)
AU (1) AU572005B2 (ja)
CA (1) CA1254671A (ja)
DE (1) DE3539208C2 (ja)
FR (1) FR2572850B1 (ja)
GB (1) GB2167231B (ja)
NL (1) NL194711C (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768183B2 (en) * 2001-04-20 2004-07-27 Denso Corporation Semiconductor device having bipolar transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1520515A (fr) * 1967-02-07 1968-04-12 Radiotechnique Coprim Rtc Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS58212159A (ja) * 1982-06-02 1983-12-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE DE PHYSIQUE APPLIQUEE, VOL. 13, NR. 12, DEZ. 1978, SEITEN 845-850 *

Also Published As

Publication number Publication date
FR2572850B1 (fr) 1988-09-09
AU572005B2 (en) 1988-04-28
KR940005447B1 (ko) 1994-06-18
CN85108134A (zh) 1986-07-02
JPS61111575A (ja) 1986-05-29
JPH0638476B2 (ja) 1994-05-18
DE3539208C2 (de) 1998-04-09
AU4931585A (en) 1986-05-15
GB2167231A (en) 1986-05-21
ATA318985A (de) 1992-03-15
NL194711C (nl) 2002-12-03
FR2572850A1 (fr) 1986-05-09
GB2167231B (en) 1988-03-02
GB8526749D0 (en) 1985-12-04
CN1004845B (zh) 1989-07-19
DE3539208A1 (de) 1986-05-15
NL8503033A (nl) 1986-06-02
KR860004472A (ko) 1986-06-23
CA1254671A (en) 1989-05-23
NL194711B (nl) 2002-08-01

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ELJ Ceased due to non-payment of the annual fee
ELJ Ceased due to non-payment of the annual fee