ATA318985A - Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat - Google Patents
Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substratInfo
- Publication number
- ATA318985A ATA318985A AT0318985A AT318985A ATA318985A AT A318985 A ATA318985 A AT A318985A AT 0318985 A AT0318985 A AT 0318985A AT 318985 A AT318985 A AT 318985A AT A318985 A ATA318985 A AT A318985A
- Authority
- AT
- Austria
- Prior art keywords
- vertical
- semiconductor device
- common substrate
- pnp transistors
- lateral npn
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/63—Combinations of vertical and lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59232870A JPH0638476B2 (ja) | 1984-11-05 | 1984-11-05 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA318985A true ATA318985A (de) | 1992-03-15 |
| AT395272B AT395272B (de) | 1992-11-10 |
Family
ID=16946115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT0318985A AT395272B (de) | 1984-11-05 | 1985-11-05 | Halbleitereinrichtung mit vertikalen und lateralen npn- und pnp-transistoren auf einem gemeinsamen substrat |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPH0638476B2 (de) |
| KR (1) | KR940005447B1 (de) |
| CN (1) | CN1004845B (de) |
| AT (1) | AT395272B (de) |
| AU (1) | AU572005B2 (de) |
| CA (1) | CA1254671A (de) |
| DE (1) | DE3539208C2 (de) |
| FR (1) | FR2572850B1 (de) |
| GB (1) | GB2167231B (de) |
| NL (1) | NL194711C (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768183B2 (en) * | 2001-04-20 | 2004-07-27 | Denso Corporation | Semiconductor device having bipolar transistors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1520515A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication |
| JPS5710964A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Manufacture of semiconductor device |
| EP0093304B1 (de) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Integrierte Halbleiterschaltung und Verfahren zur Herstellung derselben |
| JPS58212159A (ja) * | 1982-06-02 | 1983-12-09 | Matsushita Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
-
1984
- 1984-11-05 JP JP59232870A patent/JPH0638476B2/ja not_active Expired - Lifetime
-
1985
- 1985-10-15 KR KR1019850007581A patent/KR940005447B1/ko not_active Expired - Lifetime
- 1985-10-28 CA CA000493970A patent/CA1254671A/en not_active Expired
- 1985-10-30 GB GB08526749A patent/GB2167231B/en not_active Expired
- 1985-11-02 CN CN85108134.7A patent/CN1004845B/zh not_active Expired
- 1985-11-04 AU AU49315/85A patent/AU572005B2/en not_active Expired
- 1985-11-05 AT AT0318985A patent/AT395272B/de not_active IP Right Cessation
- 1985-11-05 NL NL8503033A patent/NL194711C/nl not_active IP Right Cessation
- 1985-11-05 FR FR8516362A patent/FR2572850B1/fr not_active Expired
- 1985-11-05 DE DE3539208A patent/DE3539208C2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2572850B1 (fr) | 1988-09-09 |
| AU572005B2 (en) | 1988-04-28 |
| KR940005447B1 (ko) | 1994-06-18 |
| CN85108134A (zh) | 1986-07-02 |
| JPS61111575A (ja) | 1986-05-29 |
| JPH0638476B2 (ja) | 1994-05-18 |
| DE3539208C2 (de) | 1998-04-09 |
| AU4931585A (en) | 1986-05-15 |
| GB2167231A (en) | 1986-05-21 |
| NL194711C (nl) | 2002-12-03 |
| FR2572850A1 (fr) | 1986-05-09 |
| GB2167231B (en) | 1988-03-02 |
| GB8526749D0 (en) | 1985-12-04 |
| CN1004845B (zh) | 1989-07-19 |
| DE3539208A1 (de) | 1986-05-15 |
| NL8503033A (nl) | 1986-06-02 |
| AT395272B (de) | 1992-11-10 |
| KR860004472A (ko) | 1986-06-23 |
| CA1254671A (en) | 1989-05-23 |
| NL194711B (nl) | 2002-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee | ||
| ELJ | Ceased due to non-payment of the annual fee |