AT517039A3 - Verfahren und Vorrichtung zum zumindest teilweisen Aushärten eines auf ein Substrat aufgebrachten Fotolacks - Google Patents

Verfahren und Vorrichtung zum zumindest teilweisen Aushärten eines auf ein Substrat aufgebrachten Fotolacks Download PDF

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Publication number
AT517039A3
AT517039A3 ATA50316/2016A AT503162016A AT517039A3 AT 517039 A3 AT517039 A3 AT 517039A3 AT 503162016 A AT503162016 A AT 503162016A AT 517039 A3 AT517039 A3 AT 517039A3
Authority
AT
Austria
Prior art keywords
substrate
photoresist
curing
partial curing
base
Prior art date
Application number
ATA50316/2016A
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English (en)
Other versions
AT517039A2 (de
Original Assignee
Suss Microtec Lithography Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suss Microtec Lithography Gmbh filed Critical Suss Microtec Lithography Gmbh
Publication of AT517039A2 publication Critical patent/AT517039A2/de
Publication of AT517039A3 publication Critical patent/AT517039A3/de

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Atmospheric Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Control Of Resistance Heating (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zum zumindest teilweisen Aushärten eines auf ein Substrat (14) aufgebrachten Fotolacks (12), wobei die folgenden Schritte ausgeführt werden: Das mit dem Fotolack (12) beschichtete Substrat (14) wird auf einer Unterlage (16) angeordnet. Der Fotolack (12) wird für eine erste vorbestimmte Zeitdauer einer zum Aushärten des Fotolacks (12) geeigneten Temperatur ausgesetzt. Nach Ablauf der ersten vorbestimmten Zeitdauer wird das Substrat (14) von der Unterlage abgehoben, gedreht, wieder auf der Unterlage (16) abgesetzt und für eine zweite vorbestimmte Zeitdauer einer zum Aushärten des Fotolacks (12) geeigneten Temperatur ausgesetzt. Die Erfindung betrifft auch eine Vorrichtung zum zumindest teilweisen Aushärten eines auf einem Substrat (14) aufgebrachten Fotolacks (12), mit einer Kammer (20), einer Unterlage (16), die in der Kammer (20) angeordnet ist und auf der das Substrat (14) angeordnet werden kann, und einer Vorrichtung (22) zum Drehen des Substrats (14) zwischen einer ersten und einer zweiten Phase des Aushärtens des Fotolacks (12).
ATA50316/2016A 2015-04-15 2016-04-13 Verfahren und Vorrichtung zum zumindest teilweisen Aushärten eines auf ein Substrat aufgebrachten Fotolacks AT517039A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL2014642A NL2014642B1 (en) 2015-04-15 2015-04-15 Method and device for curing at least in part a photoresist applied to a substrate.

Publications (2)

Publication Number Publication Date
AT517039A2 AT517039A2 (de) 2016-10-15
AT517039A3 true AT517039A3 (de) 2021-05-15

Family

ID=53783825

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA50316/2016A AT517039A3 (de) 2015-04-15 2016-04-13 Verfahren und Vorrichtung zum zumindest teilweisen Aushärten eines auf ein Substrat aufgebrachten Fotolacks

Country Status (9)

Country Link
US (1) US9960061B2 (de)
JP (1) JP6739216B2 (de)
KR (1) KR20160123247A (de)
CN (1) CN106054540A (de)
AT (1) AT517039A3 (de)
CH (1) CH711013B1 (de)
DE (1) DE102016106653A1 (de)
NL (1) NL2014642B1 (de)
TW (1) TWI713515B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108213016B (zh) * 2017-12-28 2020-07-24 德淮半导体有限公司 晶圆清洗装置及晶圆清洗方法
US12087601B2 (en) 2019-05-08 2024-09-10 International Business Machines Corporation Reducing line edge roughness and mitigating defects by wafer freezing
CN110090788B (zh) * 2019-05-15 2024-04-16 广东瑞谷光网通信股份有限公司 一种用于光学器件固胶的恒温旋转加热台结构
CN110475393B (zh) * 2019-08-12 2021-12-07 百隆智能家居有限公司 一种多角度旋转烤灯
KR102226849B1 (ko) 2019-10-21 2021-03-12 순천향대학교 산학협력단 편마비 환자를 위한 보행 보조기
KR20210099891A (ko) 2020-02-05 2021-08-13 주식회사 아이티바이오 편마비 환자를 위한 보행 보조기

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289126A (ja) * 1990-04-05 1991-12-19 Nec Corp レジスト膜形成装置
US6381873B1 (en) * 2000-08-04 2002-05-07 Vladimir Peremychtchev Method for drying a polymer coating on a substrate
US20070295276A1 (en) * 2004-12-22 2007-12-27 Sokudo Co., Ltd. Bake plate having engageable thermal mass
US20100151696A1 (en) * 2008-12-11 2010-06-17 Takayuki Ito Manufacturing method for semiconductor device and heat treatment apparatus
US20110034015A1 (en) * 2009-08-10 2011-02-10 Kabushiki Kaisha Toshiba Heat treatment apparatus and method for manufacturing semiconductor device

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US5766824A (en) * 1993-07-16 1998-06-16 Semiconductor Systems, Inc. Method and apparatus for curing photoresist
JPH08222503A (ja) * 1995-02-14 1996-08-30 Hitachi Ltd 加熱処理方法および装置
JPH10261571A (ja) * 1997-03-19 1998-09-29 Hitachi Ltd パターン形成方法
JP2003068598A (ja) * 2001-08-30 2003-03-07 Nec Kagoshima Ltd ベーキング方法及びベーキング装置
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03289126A (ja) * 1990-04-05 1991-12-19 Nec Corp レジスト膜形成装置
US6381873B1 (en) * 2000-08-04 2002-05-07 Vladimir Peremychtchev Method for drying a polymer coating on a substrate
US20070295276A1 (en) * 2004-12-22 2007-12-27 Sokudo Co., Ltd. Bake plate having engageable thermal mass
US20100151696A1 (en) * 2008-12-11 2010-06-17 Takayuki Ito Manufacturing method for semiconductor device and heat treatment apparatus
US20110034015A1 (en) * 2009-08-10 2011-02-10 Kabushiki Kaisha Toshiba Heat treatment apparatus and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP6739216B2 (ja) 2020-08-12
JP2017011258A (ja) 2017-01-12
KR20160123247A (ko) 2016-10-25
TW201642051A (zh) 2016-12-01
TWI713515B (zh) 2020-12-21
CH711013B1 (de) 2020-03-13
US20160306280A1 (en) 2016-10-20
NL2014642B1 (en) 2016-12-20
AT517039A2 (de) 2016-10-15
CH711013A2 (de) 2016-10-31
CN106054540A (zh) 2016-10-26
NL2014642A (en) 2016-10-19
US9960061B2 (en) 2018-05-01
DE102016106653A1 (de) 2016-10-20

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Effective date: 20221115