ATE127288T1 - Optisches halbleiterbauelement mit einer grösseren ausgangsfeldfleckverteilung und sein herstellungsverfahren. - Google Patents

Optisches halbleiterbauelement mit einer grösseren ausgangsfeldfleckverteilung und sein herstellungsverfahren.

Info

Publication number
ATE127288T1
ATE127288T1 AT92403264T AT92403264T ATE127288T1 AT E127288 T1 ATE127288 T1 AT E127288T1 AT 92403264 T AT92403264 T AT 92403264T AT 92403264 T AT92403264 T AT 92403264T AT E127288 T1 ATE127288 T1 AT E127288T1
Authority
AT
Austria
Prior art keywords
mode
production process
optical semiconductor
semiconductor component
guide
Prior art date
Application number
AT92403264T
Other languages
English (en)
Inventor
Pierre Doussiere
Original Assignee
Alsthom Cge Alcatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Cge Alcatel filed Critical Alsthom Cge Alcatel
Application granted granted Critical
Publication of ATE127288T1 publication Critical patent/ATE127288T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
AT92403264T 1991-12-04 1992-12-03 Optisches halbleiterbauelement mit einer grösseren ausgangsfeldfleckverteilung und sein herstellungsverfahren. ATE127288T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9115040A FR2684823B1 (fr) 1991-12-04 1991-12-04 Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.

Publications (1)

Publication Number Publication Date
ATE127288T1 true ATE127288T1 (de) 1995-09-15

Family

ID=9419673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92403264T ATE127288T1 (de) 1991-12-04 1992-12-03 Optisches halbleiterbauelement mit einer grösseren ausgangsfeldfleckverteilung und sein herstellungsverfahren.

Country Status (9)

Country Link
US (1) US5278926A (de)
EP (1) EP0545820B1 (de)
JP (1) JP3202082B2 (de)
AT (1) ATE127288T1 (de)
CA (1) CA2084355A1 (de)
DE (1) DE69204432T2 (de)
ES (1) ES2076018T3 (de)
FR (1) FR2684823B1 (de)
NO (1) NO308817B1 (de)

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US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation
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US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
US6310995B1 (en) * 1998-11-25 2001-10-30 University Of Maryland Resonantly coupled waveguides using a taper
US6829276B1 (en) * 1999-10-22 2004-12-07 Trumpf Photonics, Inc. Integrated high power semiconductor laser
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US6498873B1 (en) 2000-08-31 2002-12-24 Agere Systems Inc. Photo detector assembly
JP2002107681A (ja) * 2000-09-29 2002-04-10 Fujitsu Quantum Devices Ltd 光半導体装置
US7068870B2 (en) 2000-10-26 2006-06-27 Shipley Company, L.L.C. Variable width waveguide for mode-matching and method for making
US7251406B2 (en) * 2000-12-14 2007-07-31 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
WO2002095453A2 (en) * 2000-12-14 2002-11-28 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
US7158701B2 (en) * 2001-02-21 2007-01-02 Shipley Company, L.L.C. Method for making optical devices with a moving mask and optical devices made thereby
EP1245971B1 (de) * 2001-03-29 2003-12-17 Interuniversitair Microelektronica Centrum Vzw Sich verjüngender Wellenleiter (Taper) mit lateralen strahlbegrenzenden Rippenwellenleitern
US6912345B2 (en) * 2001-03-30 2005-06-28 Shipley Company, L.L.C. Tapered optical fiber for coupling to diffused optical waveguides
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US6999662B2 (en) * 2001-11-15 2006-02-14 UNIVERSITé LAVAL Segmented waveguide array grating filters
US6993224B1 (en) 2001-11-15 2006-01-31 UNIVERSITé LAVAL Segmented waveguide array gratings (SWAG)-based archival optical memory
ITMI20020267A1 (it) * 2002-02-12 2003-08-12 Bavelloni Z Spa Macchina automatica per la lavorazione di materiali in lastra in particolare lastre di vetro
FR2836724B1 (fr) * 2002-03-01 2004-07-23 Silios Technologies Adaptateur de mode optique pourvu de deux canaux distincts
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KR100958338B1 (ko) * 2007-12-18 2010-05-17 한국전자통신연구원 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저
US8320721B2 (en) 2008-02-29 2012-11-27 Google Inc. Optical mode transformer, in particular for coupling an optical fiber and a high-index contrast waveguide
CA2719342C (en) * 2008-02-29 2016-04-26 Pgt Photonics S.P.A Optical mode transformer, in particular for coupling an optical fiber and a high-index contrast waveguide
US8078020B2 (en) * 2008-04-08 2011-12-13 Alcatel Lucent Optical mode-converter structure
JP6315600B2 (ja) * 2015-03-12 2018-04-25 日本電信電話株式会社 半導体光素子
CN108351467B (zh) 2015-07-22 2020-10-30 Bb光电公司 具有介质波导的化合物半导体光子集成电路
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
WO2019156189A1 (ja) * 2018-02-08 2019-08-15 古河電気工業株式会社 光集積素子および光モジュール
JP6981291B2 (ja) * 2018-02-14 2021-12-15 住友電気工業株式会社 ハイブリッド光装置、ハイブリッド光装置を作製する方法
US20240332907A1 (en) * 2023-03-29 2024-10-03 Tin Komljenovic Heterogeneous lasers with facets optimized for high power

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Also Published As

Publication number Publication date
JP3202082B2 (ja) 2001-08-27
FR2684823A1 (fr) 1993-06-11
EP0545820A1 (de) 1993-06-09
US5278926A (en) 1994-01-11
NO924648L (no) 1993-06-07
NO308817B1 (no) 2000-10-30
DE69204432D1 (de) 1995-10-05
JPH05243679A (ja) 1993-09-21
DE69204432T2 (de) 1996-02-22
ES2076018T3 (es) 1995-10-16
CA2084355A1 (fr) 1993-06-05
FR2684823B1 (fr) 1994-01-21
EP0545820B1 (de) 1995-08-30
NO924648D0 (no) 1992-12-02

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee