ATE123175T1 - Lateraler heterogrenzflächen-bipolartransistor. - Google Patents

Lateraler heterogrenzflächen-bipolartransistor.

Info

Publication number
ATE123175T1
ATE123175T1 AT91301383T AT91301383T ATE123175T1 AT E123175 T1 ATE123175 T1 AT E123175T1 AT 91301383 T AT91301383 T AT 91301383T AT 91301383 T AT91301383 T AT 91301383T AT E123175 T1 ATE123175 T1 AT E123175T1
Authority
AT
Austria
Prior art keywords
bipolar transistor
boundary
base
lateral
lateral hetero
Prior art date
Application number
AT91301383T
Other languages
English (en)
Inventor
Masakazu Morishita
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2042066A external-priority patent/JP3001599B2/ja
Priority claimed from JP2042067A external-priority patent/JP3001600B2/ja
Priority claimed from JP2042068A external-priority patent/JP3001601B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE123175T1 publication Critical patent/ATE123175T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H10D62/184—Base regions of bipolar transistors, e.g. BJTs or IGBTs of lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165—Tunnel injectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
AT91301383T 1990-02-22 1991-02-21 Lateraler heterogrenzflächen-bipolartransistor. ATE123175T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2042066A JP3001599B2 (ja) 1990-02-22 1990-02-22 半導体装置
JP2042067A JP3001600B2 (ja) 1990-02-22 1990-02-22 半導体装置
JP2042068A JP3001601B2 (ja) 1990-02-22 1990-02-22 半導体装置

Publications (1)

Publication Number Publication Date
ATE123175T1 true ATE123175T1 (de) 1995-06-15

Family

ID=27291053

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91301383T ATE123175T1 (de) 1990-02-22 1991-02-21 Lateraler heterogrenzflächen-bipolartransistor.

Country Status (4)

Country Link
US (1) US5734183A (de)
EP (3) EP0642170B1 (de)
AT (1) ATE123175T1 (de)
DE (3) DE69109890T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0616370B1 (de) * 1993-03-16 2004-06-09 Canon Kabushiki Kaisha Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
US6034413A (en) * 1997-02-27 2000-03-07 Texas Instruments Incorporated High speed biCMOS gate power for power MOSFETs incorporating improved injection immunity
EP0881688A1 (de) * 1997-05-30 1998-12-02 STMicroelectronics S.r.l. Elektronisches Bauelement vom Typ lateral-bipolar-pnp
US5912481A (en) 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6423990B1 (en) 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
US6674103B2 (en) * 2000-07-31 2004-01-06 The Regents Of The University Of California HBT with nitrogen-containing current blocking base collector interface and method for current blocking
US6362065B1 (en) * 2001-02-26 2002-03-26 Texas Instruments Incorporated Blocking of boron diffusion through the emitter-emitter poly interface in PNP HBTs through use of a SiC layer at the top of the emitter epi layer
US6459104B1 (en) * 2001-05-10 2002-10-01 Newport Fab Method for fabricating lateral PNP heterojunction bipolar transistor and related structure
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
US7517768B2 (en) * 2003-03-31 2009-04-14 Intel Corporation Method for fabricating a heterojunction bipolar transistor
EP2180517A1 (de) * 2008-10-24 2010-04-28 Epcos Ag Bipolarer PNP-Transistor mit seitlichem Kollektor und Herstellungsverfahren
CN102386219B (zh) * 2010-08-31 2013-07-24 上海华虹Nec电子有限公司 SiGe HBT工艺中的寄生横向型PNP三极管及制造方法
CN102412280B (zh) * 2010-09-21 2013-09-11 上海华虹Nec电子有限公司 锗硅hbt工艺中的横向型寄生pnp器件
CN103377918B (zh) * 2012-04-27 2015-10-21 中芯国际集成电路制造(上海)有限公司 Npn异质结双极晶体管及其制造方法
US8558282B1 (en) 2012-09-08 2013-10-15 International Business Machines Corporation Germanium lateral bipolar junction transistor
CN104919595B (zh) * 2013-06-24 2019-06-07 理想能量有限公司 具有双向双极晶体管的系统、电路、器件和方法
CN110556420B (zh) * 2019-08-23 2022-11-04 北京工业大学 一种掺杂浓度可调的横向SiGe异质结双极晶体管
US12012553B2 (en) * 2020-07-11 2024-06-18 Uop Llc Conversion of plastics to monomers with integrated recovery with a cracking unit
US11462632B2 (en) 2020-12-22 2022-10-04 Globalfoundries U.S. Inc. Lateral bipolar junction transistor device and method of making such a device
US11424349B1 (en) 2021-02-17 2022-08-23 Globalfoundries U.S. Inc. Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672413A (en) * 1984-04-16 1987-06-09 Trw Inc. Barrier emitter transistor
FR2625612B1 (fr) * 1987-12-30 1990-05-04 Labo Electronique Physique Procede de realisation d'un dispositif semiconducteur du type transistor bipolaire a heterojonction
US4987468A (en) * 1988-06-17 1991-01-22 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser

Also Published As

Publication number Publication date
DE69109890D1 (de) 1995-06-29
EP0642171B1 (de) 1998-05-06
EP0642170B1 (de) 1997-12-03
DE69109890T2 (de) 1995-11-02
EP0443852A1 (de) 1991-08-28
EP0642171A3 (de) 1995-08-09
DE69128364T2 (de) 1998-04-09
DE69128364D1 (de) 1998-01-15
EP0443852B1 (de) 1995-05-24
US5734183A (en) 1998-03-31
DE69129376D1 (de) 1998-06-10
EP0642171A2 (de) 1995-03-08
EP0642170A2 (de) 1995-03-08
DE69129376T2 (de) 1998-09-24
EP0642170A3 (de) 1995-08-09

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Legal Events

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