ATE126366T1 - Gasphasen-aufgebrachte photolacke aus anionisch polymerisierbaren monomeren. - Google Patents
Gasphasen-aufgebrachte photolacke aus anionisch polymerisierbaren monomeren.Info
- Publication number
- ATE126366T1 ATE126366T1 AT90201328T AT90201328T ATE126366T1 AT E126366 T1 ATE126366 T1 AT E126366T1 AT 90201328 T AT90201328 T AT 90201328T AT 90201328 T AT90201328 T AT 90201328T AT E126366 T1 ATE126366 T1 AT E126366T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- photoresistants
- gas phase
- polymerizable monomers
- anionic polymerizable
- Prior art date
Links
- 239000000178 monomer Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/828,107 US4675273A (en) | 1986-02-10 | 1986-02-10 | Resists formed by vapor deposition of anionically polymerizable monomer |
| US06/828,109 US4675270A (en) | 1986-02-10 | 1986-02-10 | Imaging method for vapor deposited photoresists of anionically polymerizable monomer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE126366T1 true ATE126366T1 (de) | 1995-08-15 |
Family
ID=27125161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT90201328T ATE126366T1 (de) | 1986-02-10 | 1987-02-10 | Gasphasen-aufgebrachte photolacke aus anionisch polymerisierbaren monomeren. |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP0393799B1 (de) |
| JP (1) | JPH07120047B2 (de) |
| AT (1) | ATE126366T1 (de) |
| DE (2) | DE3782833T2 (de) |
| HK (1) | HK1005323A1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2550655B2 (ja) * | 1988-04-26 | 1996-11-06 | 凸版印刷株式会社 | ポジ型電子線レジスト |
| JPH022564A (ja) * | 1988-06-15 | 1990-01-08 | Toagosei Chem Ind Co Ltd | ポジ型電子線レジスト |
| JPH02113253A (ja) * | 1988-10-24 | 1990-04-25 | Toagosei Chem Ind Co Ltd | ポジ型レジスト |
| JP2574458B2 (ja) * | 1989-04-12 | 1997-01-22 | 川崎製鉄株式会社 | 指紋検出方法 |
| US7435353B2 (en) * | 2004-12-09 | 2008-10-14 | President And Fellows Of Harvard College | Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers |
| US7524431B2 (en) | 2004-12-09 | 2009-04-28 | President And Fellows Of Harvard College | Lift-off patterning processing employing energetically-stimulated local removal of solid-condensed-gas layers |
| US8841152B2 (en) | 2011-05-19 | 2014-09-23 | Massachusetts Institute Of Technology | Method of lift-off patterning thin films in situ employing phase change resists |
| WO2021059189A1 (en) * | 2019-09-27 | 2021-04-01 | 3M Innovative Properties Company | Molding process and compositions therefor |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US455041A (en) | 1891-06-30 | Ner-alteneck | ||
| US3922449A (en) * | 1973-11-26 | 1975-11-25 | Loctite Ireland Ltd | Interfitting threaded part and process of preparing same |
| US4081276A (en) * | 1976-10-18 | 1978-03-28 | General Electric Company | Photographic method |
| JPS55105244A (en) * | 1979-02-06 | 1980-08-12 | Victor Co Of Japan Ltd | Electron beam resist |
| US4382985A (en) * | 1980-10-11 | 1983-05-10 | Daikin Kogyo Co., Ltd. | Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film |
| US4348473A (en) * | 1981-03-04 | 1982-09-07 | Xerox Corporation | Dry process for the production of microelectronic devices |
| US4460436A (en) * | 1983-09-06 | 1984-07-17 | International Business Machines Corporation | Deposition of polymer films by means of ion beams |
| JPS60501777A (ja) * | 1983-11-02 | 1985-10-17 | ヒユ−ズ・エアクラフト・カンパニ− | 二酸化ケイ素系グラフト重合リソグラフマスク |
| GB8402937D0 (en) * | 1984-02-03 | 1984-03-07 | Ciba Geigy Ag | Production of images |
| JPH067545B2 (ja) * | 1984-04-20 | 1994-01-26 | 株式会社日立製作所 | パタ−ン形成方法 |
| US4550041A (en) * | 1984-12-14 | 1985-10-29 | Loctite Corporation | Article containing a thixotropic additive and cyanoacrylate monomer employed for developing latent fingerprints |
| US4551418A (en) * | 1985-02-19 | 1985-11-05 | International Business Machines Corporation | Process for preparing negative relief images with cationic photopolymerization |
-
1987
- 1987-02-10 EP EP90201328A patent/EP0393799B1/de not_active Expired - Lifetime
- 1987-02-10 JP JP62029457A patent/JPH07120047B2/ja not_active Expired - Lifetime
- 1987-02-10 DE DE8787301125T patent/DE3782833T2/de not_active Expired - Fee Related
- 1987-02-10 EP EP87301125A patent/EP0233747B1/de not_active Expired
- 1987-02-10 AT AT90201328T patent/ATE126366T1/de not_active IP Right Cessation
- 1987-02-10 DE DE3751453T patent/DE3751453T2/de not_active Expired - Fee Related
-
1998
- 1998-05-22 HK HK98104438A patent/HK1005323A1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0393799A3 (de) | 1992-05-27 |
| EP0233747B1 (de) | 1992-12-02 |
| DE3751453T2 (de) | 1996-04-04 |
| JPS62247356A (ja) | 1987-10-28 |
| DE3782833D1 (de) | 1993-01-14 |
| HK1005323A1 (en) | 1998-12-31 |
| JPH07120047B2 (ja) | 1995-12-20 |
| DE3782833T2 (de) | 1993-05-19 |
| DE3751453D1 (de) | 1995-09-14 |
| EP0233747A3 (en) | 1989-02-08 |
| EP0233747A2 (de) | 1987-08-26 |
| EP0393799A2 (de) | 1990-10-24 |
| EP0393799B1 (de) | 1995-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |