ES2082191T3 - Monomeros polimerizables por aniones, sus polimeros y uso de tales polimeros en sustancias fotoprotectoras. - Google Patents

Monomeros polimerizables por aniones, sus polimeros y uso de tales polimeros en sustancias fotoprotectoras.

Info

Publication number
ES2082191T3
ES2082191T3 ES91902819T ES91902819T ES2082191T3 ES 2082191 T3 ES2082191 T3 ES 2082191T3 ES 91902819 T ES91902819 T ES 91902819T ES 91902819 T ES91902819 T ES 91902819T ES 2082191 T3 ES2082191 T3 ES 2082191T3
Authority
ES
Spain
Prior art keywords
polymers
monomers
image
silicon
photoprotecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91902819T
Other languages
English (en)
Inventor
John G Woods
Pauline Coakley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Henkel Loctite Corp
Original Assignee
Henkel Loctite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henkel Loctite Corp filed Critical Henkel Loctite Corp
Application granted granted Critical
Publication of ES2082191T3 publication Critical patent/ES2082191T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C07F7/081—Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F30/00—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
    • C08F30/04—Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Dental Preparations (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)

Abstract

MONOMEROS ANIONICAMENTE POLIMERIZABLES QUE CONTIENEN AL MENOS UN ATOMO DE SILICIO O DE TITANIO PARA SUSTANCIAS FOTOENDURECIBLES POLIMERICAS PARA UTILIZARLOS EN UNA MICROLITOGRAFIA. LOS MONOMEROS TIENEN LA FORMULA (I), EN DONDE A ES -H O -CH=CH SUB 2; X ES UN GRUPO FUERTE DE RETIRADA DE ELECTRONES; Y ES UN FUERTE GRUPO DE RETIRADA DE ELECTRONES QUE CONTIENE AL MENOS UN ATOMO DE SILICIO O DE TITANIO. Y ES PREFERENTEMENTE (II), EN DONDE N ES DE 1 A 5 Y R (AL CUADRADO) , R ELEVADO 3 Y R ELEVADO 4 SON ALQUILO C SUB 1 -C SUB 10. UN MONOMERO PARTICULARMENTE PREFERENTE ES 3-TRIMETILSILILPROPIL -2-CIANOACRILATO. SE DESCRIBEN LOS METODOS PARA APLICAR UN REVESTIMIENTO RESISTENTE MEDIANTE UNA DEPOSICION POR VAPOR DE ESTOS MONOMEROS Y LA EXPOSICION A UNA RADIACION. SE PUEDE PRODUCIR UNA IMAGEN DE TONO POSITIVO O NEGATIVO DEPENDIENDO DEL METODO DE FORMACION DE IMAGENES UTILIZADO. LA CAPA FORMADORA DE IMAGENES PUEDE SER APLICADA SOBRE UNA CAPA PLANIFICADORA PARA FORMAR UNA SUSTANCIA FOTOENDURECIBLE MULTICAPA.
ES91902819T 1989-11-21 1990-11-20 Monomeros polimerizables por aniones, sus polimeros y uso de tales polimeros en sustancias fotoprotectoras. Expired - Lifetime ES2082191T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE371389 1989-11-21
US54246490A 1990-06-22 1990-06-22

Publications (1)

Publication Number Publication Date
ES2082191T3 true ES2082191T3 (es) 1996-03-16

Family

ID=26319352

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91902819T Expired - Lifetime ES2082191T3 (es) 1989-11-21 1990-11-20 Monomeros polimerizables por aniones, sus polimeros y uso de tales polimeros en sustancias fotoprotectoras.

Country Status (9)

Country Link
US (1) US5359101A (es)
EP (1) EP0502128B1 (es)
JP (1) JPH05504366A (es)
AT (1) ATE132510T1 (es)
CA (1) CA2019669A1 (es)
DE (1) DE69024661T2 (es)
ES (1) ES2082191T3 (es)
HK (1) HK1005457A1 (es)
WO (1) WO1991007446A1 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5548055A (en) * 1995-01-13 1996-08-20 Sri International Single-ion conducting solid polymer electrolytes
US5504252A (en) * 1995-05-05 1996-04-02 Loctite Corporation Synthesis of cyanoacrylate esters by oxidation of aromatic selenyl cyanopropionates
US6673192B1 (en) 1997-09-25 2004-01-06 Loctite Corporation Multi-amine compound primers for bonding of polyolefins with cyanoacrylate adhesives
KR100363642B1 (ko) * 1999-11-11 2002-12-05 아남반도체 주식회사 반도체 소자의 접촉부 형성 방법
US6245933B1 (en) 1999-11-19 2001-06-12 Closure Medical Corporation Transesterification method for making cyanoacrylates
US7341716B2 (en) * 2002-04-12 2008-03-11 Boston Scientific Scimed, Inc. Occlusive composition
WO2007046646A1 (en) * 2005-10-20 2007-04-26 Lg Chem, Ltd. Novel organic silane compound
KR100840114B1 (ko) 2005-10-20 2008-06-19 주식회사 엘지화학 점착제 조성물
US7867688B2 (en) * 2006-05-30 2011-01-11 Eastman Kodak Company Laser ablation resist
US7745101B2 (en) * 2006-06-02 2010-06-29 Eastman Kodak Company Nanoparticle patterning process
US8686105B2 (en) * 2007-10-24 2014-04-01 Henkel IP & Holding GmbH Adhesive systems using imines and salts thereof, precursors to electron deficient olefins and coreactants therefor
WO2009053484A2 (en) 2007-10-24 2009-04-30 Loctite (R & D) Limited Electron deficient olefins and curable compositions prepared therefrom
US20100086735A1 (en) * 2008-10-03 2010-04-08 The United States Of America As Represented By The Secretary Of The Navy Patterned Functionalization of Nanomechanical Resonators for Chemical Sensing
US10196471B1 (en) 2008-10-24 2019-02-05 Henkel IP & Holding GmbH Curable composition having an electron deficient olefin
WO2015035066A1 (en) 2013-09-04 2015-03-12 President And Fellows Of Harvard College Growing films via sequential liquid/vapor phases
EP3144072A1 (en) * 2015-09-17 2017-03-22 Henkel AG & Co. KGaA Dispenser, kit and method for applying an activator for a curable cyanoacrylate-based component

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2391251A (en) * 1941-08-08 1945-12-18 Wingfoot Corp Derivatives of fatty acids and method of preparing same
US2467926A (en) * 1947-03-01 1949-04-19 Goodrich Co B F Preparation of monomeric alkyl alpha-cyano-acrylates
US2665299A (en) * 1952-05-07 1954-01-05 Goodrich Co B F Stabilized compositions comprising monomeric 1, 1-dicyano ethylene
US2721858A (en) * 1954-03-10 1955-10-25 Eastman Kodak Co Method of making alpha-cyanoacrylates
US2922807A (en) * 1957-02-01 1960-01-26 Dow Corning Preparation of acryloxyalkylorganodisiloxanes
US2985682A (en) * 1958-12-31 1961-05-23 Monsanto Chemicals Method of making cyanoacetic acid esters
US3142698A (en) * 1960-10-03 1964-07-28 Borden Co Cyanoacrylate esters
US3254111A (en) * 1960-12-09 1966-05-31 Eastman Kodak Co Esters of alpha-cyanoacrylic acid and process for the manufacture thereof
US3316227A (en) * 1963-10-18 1967-04-25 Lord Corp Preparation of 1, 1-disubstituted diunsaturated compounds
GB1130638A (en) * 1966-04-06 1968-10-16 Ici Ltd Preparation of -‡-cyanoacrylic esters
US3355482A (en) * 1966-06-20 1967-11-28 Eastman Kodak Co Stabilized cyanoacrylate adhesives
CH540329A (de) * 1967-11-10 1973-08-15 Intercontinental Chem Co Ltd Klebstoff
NL163797C (nl) * 1969-10-10 Loctite Ireland Ltd Werkwijze voor het bereiden van hechtmiddelsamen- stellingen op basis van esters van alfa-cyaanacrylzuur, die een weekmaker bevatten.
US3654340A (en) * 1970-08-27 1972-04-04 Minnesota Mining & Mfg Cyanoacrylate monomer process
US4012402A (en) * 1974-10-04 1977-03-15 Johnson & Johnson Modified cyanoacrylate monomers and methods for preparation
JPS5934296B2 (ja) * 1976-06-16 1984-08-21 松下電器産業株式会社 電子ビ−ムレジストおよびその使用方法
US4081276A (en) * 1976-10-18 1978-03-28 General Electric Company Photographic method
US4153641A (en) * 1977-07-25 1979-05-08 Bausch & Lomb Incorporated Polysiloxane composition and contact lens
DE3036615A1 (de) * 1980-09-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von resiststrukturen
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
US4425471A (en) * 1981-04-23 1984-01-10 Minnesota Mining & Manufacturing Company Novel cyanoacrylate adhesive compositions and methods of bonding
EP0090089B1 (en) * 1981-12-19 1988-10-05 Daikin Kogyo Co., Ltd. Resist material and process for forming fine resist pattern
JPS58108213A (ja) * 1981-12-22 1983-06-28 Toagosei Chem Ind Co Ltd ２−シアノアクリル酸エステル重合体の製造方法
JPS58123727A (ja) * 1982-01-18 1983-07-23 Fujitsu Ltd 半導体装置の製造方法
US4460436A (en) * 1983-09-06 1984-07-17 International Business Machines Corporation Deposition of polymer films by means of ion beams
WO1985002030A1 (en) * 1983-11-02 1985-05-09 Hughes Aircraft Company GRAFT POLYMERIZED SiO2 LITHOGRAPHIC MASKS
JPH0640233B2 (ja) * 1984-04-13 1994-05-25 株式会社リコー 電子写真装置
JPS6160062A (ja) * 1984-08-31 1986-03-27 Nec Corp リモ−ト中継フアクシミリ同報装置
JPS61168607A (ja) * 1985-01-21 1986-07-30 Shin Etsu Chem Co Ltd 一成分型室温硬化性組成物
US4551418A (en) * 1985-02-19 1985-11-05 International Business Machines Corporation Process for preparing negative relief images with cationic photopolymerization
JPH0680066B2 (ja) * 1985-09-30 1994-10-12 日本合成ゴム株式会社 α−シリルアクリル酸エステルの製造法
US4675270A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Imaging method for vapor deposited photoresists of anionically polymerizable monomer
US4675273A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Resists formed by vapor deposition of anionically polymerizable monomer
JPS62215595A (ja) * 1986-03-18 1987-09-22 Shin Etsu Chem Co Ltd 新規α−（シアノメチル）ビニルシラン化合物およびその製法
JPS6395207A (ja) * 1986-10-09 1988-04-26 Daikin Ind Ltd 気体分離膜
JPS6456687A (en) * 1987-08-28 1989-03-03 Toshiba Corp Alpha-chloroacrylate having silicon atom on ester side chain
JPH0730096B2 (ja) * 1989-03-24 1995-04-05 信越化学工業株式会社 α―トリフルオロメチルアクリル酸トリオルガノシリルメチルエステル
IE892044A1 (en) * 1989-06-23 1991-01-02 Loctite Ireland Ltd Photoresists formed by polymerisation of di-unsaturated¹monomers
US5200238A (en) * 1990-06-22 1993-04-06 Loctite (Ireland) Limited Liquid crystal display devices and method of manufacture
JPH0676420B2 (ja) * 1990-11-30 1994-09-28 株式会社スリーボンド 新規なα―シアノアクリレートおよび接着剤組成物

Also Published As

Publication number Publication date
CA2019669A1 (en) 1991-05-21
JPH05504366A (ja) 1993-07-08
DE69024661D1 (de) 1996-02-15
WO1991007446A1 (en) 1991-05-30
HK1005457A1 (en) 1999-01-08
EP0502128A4 (en) 1992-04-02
US5359101A (en) 1994-10-25
DE69024661T2 (de) 1996-08-01
ATE132510T1 (de) 1996-01-15
EP0502128B1 (en) 1996-01-03
EP0502128A1 (en) 1992-09-09

Similar Documents

Publication Publication Date Title
ES2082191T3 (es) Monomeros polimerizables por aniones, sus polimeros y uso de tales polimeros en sustancias fotoprotectoras.
JP3581032B2 (ja) シリコンを含有するポリマー及びこれを含む化学増幅型レジスト組成物
KR100520148B1 (ko) 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
JP3748596B2 (ja) レジスト材料及びレジストパターンの形成方法
TWI361333B (en) Photoresist composition
JPH03223860A (ja) 新規レジスト材料
US6569599B2 (en) Partially crosslinked polymer for bilayer photoresist
HK1005457B (en) Anionically polymerizable monomers, polymers thereof, and use of such polymers in photoresists
JPH026958A (ja) デバイスの製造方法
Shiraishi et al. Novolak resin‐based positive electron‐beam resist system utilizing acid‐sensitive polymeric dissolution inhibitor with solubility reversal reactivity
CA1312843C (en) Fabrication of electronic devices utilizing lithographic techniques
JP3147059B2 (ja) 新規のフォトレジスト用共重合体
ATE126366T1 (de) Gasphasen-aufgebrachte photolacke aus anionisch polymerisierbaren monomeren.
JPS58118641A (ja) 微細パタ−ン形成用放射線ポジ型レジスト
ATE121854T1 (de) Verfahren zur bildung von fotowiderständen durchpolymerisation zweifach ungesättigter monomere.
JPS5515149A (en) Forming method of resist for microfabrication
JP3539792B2 (ja) レジスト材料及びレジストパターンの形成方法
JPH0721055B2 (ja) 二酸化硫黄と核置換スチレン誘導体との共重合体
JP3812056B2 (ja) レジストパターンの製造方法
JPH0377985B2 (es)
KR19980035759A (ko) 신규한 포토레지스트용 공중합체
JPS5912432A (ja) 感光性樹脂組成物
JPH01229243A (ja) ネガ型レジスト組成物
JPS62172342A (ja) パタ−ン形成用材料
JPS5860536A (ja) レジスト像形成方法

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 502128

Country of ref document: ES