NO308817B1 - Optisk halvlederkomponent med utvidet utgangsmodus samt fremgangsmÕte for dens fremstilling - Google Patents

Optisk halvlederkomponent med utvidet utgangsmodus samt fremgangsmÕte for dens fremstilling Download PDF

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Publication number
NO308817B1
NO308817B1 NO924648A NO924648A NO308817B1 NO 308817 B1 NO308817 B1 NO 308817B1 NO 924648 A NO924648 A NO 924648A NO 924648 A NO924648 A NO 924648A NO 308817 B1 NO308817 B1 NO 308817B1
Authority
NO
Norway
Prior art keywords
mode
waveguide
width
active
broad
Prior art date
Application number
NO924648A
Other languages
English (en)
Norwegian (no)
Other versions
NO924648L (no
NO924648D0 (no
Inventor
Pierre Doussiere
Original Assignee
Alsthom Cge Alkatel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alsthom Cge Alkatel filed Critical Alsthom Cge Alkatel
Publication of NO924648D0 publication Critical patent/NO924648D0/no
Publication of NO924648L publication Critical patent/NO924648L/no
Publication of NO308817B1 publication Critical patent/NO308817B1/no

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
NO924648A 1991-12-04 1992-12-02 Optisk halvlederkomponent med utvidet utgangsmodus samt fremgangsmÕte for dens fremstilling NO308817B1 (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9115040A FR2684823B1 (fr) 1991-12-04 1991-12-04 Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.

Publications (3)

Publication Number Publication Date
NO924648D0 NO924648D0 (no) 1992-12-02
NO924648L NO924648L (no) 1993-06-07
NO308817B1 true NO308817B1 (no) 2000-10-30

Family

ID=9419673

Family Applications (1)

Application Number Title Priority Date Filing Date
NO924648A NO308817B1 (no) 1991-12-04 1992-12-02 Optisk halvlederkomponent med utvidet utgangsmodus samt fremgangsmÕte for dens fremstilling

Country Status (9)

Country Link
US (1) US5278926A (de)
EP (1) EP0545820B1 (de)
JP (1) JP3202082B2 (de)
AT (1) ATE127288T1 (de)
CA (1) CA2084355A1 (de)
DE (1) DE69204432T2 (de)
ES (1) ES2076018T3 (de)
FR (1) FR2684823B1 (de)
NO (1) NO308817B1 (de)

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US6088500A (en) * 1997-04-11 2000-07-11 Trw Inc. Expanded mode wave guide semiconductor modulation
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US6310995B1 (en) * 1998-11-25 2001-10-30 University Of Maryland Resonantly coupled waveguides using a taper
US6829276B1 (en) 1999-10-22 2004-12-07 Trumpf Photonics, Inc. Integrated high power semiconductor laser
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US6498873B1 (en) 2000-08-31 2002-12-24 Agere Systems Inc. Photo detector assembly
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US7068870B2 (en) 2000-10-26 2006-06-27 Shipley Company, L.L.C. Variable width waveguide for mode-matching and method for making
US7251406B2 (en) * 2000-12-14 2007-07-31 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
WO2002095453A2 (en) * 2000-12-14 2002-11-28 Shipley Company, L.L.C. Optical waveguide termination with vertical and horizontal mode shaping
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ATE256875T1 (de) 2001-03-29 2004-01-15 Imec Inter Uni Micro Electr Sich verjüngender wellenleiter (taper) mit lateralen strahlbegrenzenden rippenwellenleitern
US6912345B2 (en) * 2001-03-30 2005-06-28 Shipley Company, L.L.C. Tapered optical fiber for coupling to diffused optical waveguides
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US6993224B1 (en) 2001-11-15 2006-01-31 UNIVERSITé LAVAL Segmented waveguide array gratings (SWAG)-based archival optical memory
US6999662B2 (en) * 2001-11-15 2006-02-14 UNIVERSITé LAVAL Segmented waveguide array grating filters
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FR2836724B1 (fr) * 2002-03-01 2004-07-23 Silios Technologies Adaptateur de mode optique pourvu de deux canaux distincts
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US8285092B2 (en) 2007-03-20 2012-10-09 Nec Corporation Optical waveguide and spot size converter using the same
KR100958338B1 (ko) * 2007-12-18 2010-05-17 한국전자통신연구원 광 증폭기가 집적된 슈퍼루미네슨트 다이오드 및 이를이용한 외부 공진 레이저
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CA2719342C (en) * 2008-02-29 2016-04-26 Pgt Photonics S.P.A Optical mode transformer, in particular for coupling an optical fiber and a high-index contrast waveguide
US8078020B2 (en) * 2008-04-08 2011-12-13 Alcatel Lucent Optical mode-converter structure
JP6315600B2 (ja) * 2015-03-12 2018-04-25 日本電信電話株式会社 半導体光素子
WO2017015578A1 (en) 2015-07-22 2017-01-26 Miroslaw Florjanczyk Compound semiconductor photonic integrated circuit with dielectric waveguide
WO2018117077A1 (ja) * 2016-12-19 2018-06-28 古河電気工業株式会社 光集積素子および光送信機モジュール
CN111684342B (zh) * 2018-02-08 2023-07-28 古河电气工业株式会社 光集成元件以及光模块
JP6981291B2 (ja) * 2018-02-14 2021-12-15 住友電気工業株式会社 ハイブリッド光装置、ハイブリッド光装置を作製する方法
US20240332907A1 (en) * 2023-03-29 2024-10-03 Tin Komljenovic Heterogeneous lasers with facets optimized for high power

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Also Published As

Publication number Publication date
EP0545820B1 (de) 1995-08-30
DE69204432T2 (de) 1996-02-22
ES2076018T3 (es) 1995-10-16
FR2684823B1 (fr) 1994-01-21
JPH05243679A (ja) 1993-09-21
FR2684823A1 (fr) 1993-06-11
JP3202082B2 (ja) 2001-08-27
NO924648L (no) 1993-06-07
NO924648D0 (no) 1992-12-02
CA2084355A1 (fr) 1993-06-05
ATE127288T1 (de) 1995-09-15
DE69204432D1 (de) 1995-10-05
EP0545820A1 (de) 1993-06-09
US5278926A (en) 1994-01-11

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Free format text: LAPSED IN JUNE 2002