ATE127535T1 - Chemische gasphasenabscheidung von diamanten. - Google Patents

Chemische gasphasenabscheidung von diamanten.

Info

Publication number: ATE127535T1
Authority: AT; Austria
Prior art keywords: combustion flame; discharge; dielectric heating; carbon utilization; chemical vapor
Prior art date: 1991-10-25

Application number

AT92309084T

Other languages

English (en)

Inventor

Thomas Richard Anthony

James Fulton Fleischer

Original Assignee

Gen Electric

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-10-25

Filing date

1992-10-06

Publication date

1995-09-15

1992-10-06 Application filed by Gen Electric filed Critical Gen Electric

1995-09-15 Application granted granted Critical

1995-09-15 Publication of ATE127535T1 publication Critical patent/ATE127535T1/de

Links

239000010432 diamond Substances 0.000 title abstract 4
238000005229 chemical vapour deposition Methods 0.000 title 1
238000002485 combustion reaction Methods 0.000 abstract 7
238000000034 method Methods 0.000 abstract 6
230000035425 carbon utilization Effects 0.000 abstract 3
229910003460 diamond Inorganic materials 0.000 abstract 3
238000010438 heat treatment Methods 0.000 abstract 3
239000008246 gaseous mixture Substances 0.000 abstract 2
239000004215 Carbon black (E152) Substances 0.000 abstract 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
230000015572 biosynthetic process Effects 0.000 abstract 1
229930195733 hydrocarbon Natural products 0.000 abstract 1
150000002430 hydrocarbons Chemical class 0.000 abstract 1
229910052739 hydrogen Inorganic materials 0.000 abstract 1
239000001257 hydrogen Substances 0.000 abstract 1
229910052760 oxygen Inorganic materials 0.000 abstract 1
239000001301 oxygen Substances 0.000 abstract 1
239000000126 substance Substances 0.000 abstract 1
238000003786 synthesis reaction Methods 0.000 abstract 1
238000001947 vapour-phase growth Methods 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Plasma & Fusion (AREA)
General Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Combustion & Propulsion (AREA)
General Life Sciences & Earth Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Geology (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)

AT92309084T 1991-10-25 1992-10-06 Chemische gasphasenabscheidung von diamanten. ATE127535T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US78268191A	1991-10-25	1991-10-25

Publications (1)

Publication Number	Publication Date
ATE127535T1 true ATE127535T1 (de)	1995-09-15

Family

ID=25126846

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT92309084T ATE127535T1 (de)	1991-10-25	1992-10-06	Chemische gasphasenabscheidung von diamanten.

Country Status (8)

Country	Link
US (1)	US5464665A (de)
EP (1)	EP0539050B1 (de)
JP (1)	JPH05214533A (de)
KR (1)	KR930007805A (de)
AT (1)	ATE127535T1 (de)
CA (1)	CA2077773A1 (de)
DE (1)	DE69204618T2 (de)
ZA (1)	ZA927791B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6413589B1 (en)	1988-11-29	2002-07-02	Chou H. Li	Ceramic coating method
JPH0827576A (ja) *	1994-07-18	1996-01-30	Canon Inc	ダイヤモンド膜の形成方法
US5542961A (en) *	1995-03-28	1996-08-06	Norton Company	Dielectric curing
US6286206B1 (en)	1997-02-25	2001-09-11	Chou H. Li	Heat-resistant electronic systems and circuit boards
US5937514A (en)	1997-02-25	1999-08-17	Li; Chou H.	Method of making a heat-resistant system
US6676492B2 (en)	1998-12-15	2004-01-13	Chou H. Li	Chemical mechanical polishing
US6458017B1 (en)	1998-12-15	2002-10-01	Chou H. Li	Planarizing method
US6976904B2 (en) *	1998-07-09	2005-12-20	Li Family Holdings, Ltd.	Chemical mechanical polishing slurry
US6344149B1 (en)	1998-11-10	2002-02-05	Kennametal Pc Inc.	Polycrystalline diamond member and method of making the same
US6503366B2 (en) *	2000-12-07	2003-01-07	Axcelis Technologies, Inc.	Chemical plasma cathode
KR100583500B1 (ko) *	2003-11-14	2006-05-24	한국가스공사	마이크로웨이브 플라즈마 반응기를 이용한 카본블랙 및수소의 제조공정
US20140295094A1 (en) *	2013-03-26	2014-10-02	Clearsign Combustion Corporation	Combustion deposition systems and methods of use
GB201912659D0 (en)	2019-09-03	2019-10-16	Univ Bristol	Chemical vapor deposition process for producing diamond

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3677799A (en) *	1970-11-10	1972-07-18	Celanese Corp	Vapor phase boron deposition by pulse discharge
GB1592063A (en) *	1978-05-08	1981-07-01	Chloride Silent Power Ltd	Sodium sulphur cells
US4434188A (en) *	1981-12-17	1984-02-28	National Institute For Researches In Inorganic Materials	Method for synthesizing diamond
DE3574997D1 (de) *	1984-03-03	1990-02-01	Stc Plc	Pulsierendes plasmaverfahren.
JPS60221395A (ja) *	1984-04-19	1985-11-06	Yoshio Imai	ダイヤモンド薄膜の製造方法
CH664768A5 (de) *	1985-06-20	1988-03-31	Balzers Hochvakuum	Verfahren zur beschichtung von substraten in einer vakuumkammer.
US4673589A (en) *	1986-02-18	1987-06-16	Amoco Corporation	Photoconducting amorphous carbon
US4859490A (en) *	1986-07-23	1989-08-22	Sumitomo Electric Industries, Ltd.	Method for synthesizing diamond
JPS63107898A (ja) *	1986-10-23	1988-05-12	Natl Inst For Res In Inorg Mater	プラズマを用いるダイヤモンドの合成法
ZA877921B (en) *	1986-12-22	1988-04-21	General Electric Company	Condensate diamond
US5015528A (en) *	1987-03-30	1991-05-14	Crystallume	Fluidized bed diamond particle growth
US4985227A (en) *	1987-04-22	1991-01-15	Indemitsu Petrochemical Co., Ltd.	Method for synthesis or diamond
US4830702A (en) *	1987-07-02	1989-05-16	General Electric Company	Hollow cathode plasma assisted apparatus and method of diamond synthesis
JP2597497B2 (ja) *	1988-01-14	1997-04-09	洋一広瀬	気相法ダイヤモンドの合成法
JPH0668152B2 (ja) *	1988-01-27	1994-08-31	株式会社半導体エネルギー研究所	薄膜形成装置
US5087434A (en) *	1989-04-21	1992-02-11	The Pennsylvania Research Corporation	Synthesis of diamond powders in the gas phase
US5215788A (en) *	1990-07-06	1993-06-01	Kabushiki Kaisha Toyota Chuo Kenkyusho	Combustion flame method for forming diamond films
EP0491521B1 (de) *	1990-12-15	1997-03-12	Fujitsu Limited	Verfahren zur Herstellung eines Diamant-Überzuges

1992
- 1992-09-09 CA CA002077773A patent/CA2077773A1/en not_active Abandoned
- 1992-10-06 AT AT92309084T patent/ATE127535T1/de not_active IP Right Cessation
- 1992-10-06 DE DE69204618T patent/DE69204618T2/de not_active Expired - Fee Related
- 1992-10-06 EP EP92309084A patent/EP0539050B1/de not_active Expired - Lifetime
- 1992-10-09 ZA ZA927791A patent/ZA927791B/xx unknown
- 1992-10-21 JP JP4282115A patent/JPH05214533A/ja not_active Withdrawn
- 1992-10-24 KR KR1019920019692A patent/KR930007805A/ko not_active Withdrawn
1993
- 1993-06-09 US US08/074,197 patent/US5464665A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR930007805A (ko)	1993-05-20
US5464665A (en)	1995-11-07
EP0539050A1 (de)	1993-04-28
CA2077773A1 (en)	1993-04-26
EP0539050B1 (de)	1995-09-06
JPH05214533A (ja)	1993-08-24
ZA927791B (en)	1993-07-19
DE69204618D1 (de)	1995-10-12
DE69204618T2 (de)	1996-03-21

Legal Events

Date	Code	Title	Description
1996-05-15	UEP	Publication of translation of european patent specification
1997-07-15	REN	Ceased due to non-payment of the annual fee

Publication	Publication Date	Title
ATE127535T1 (de)	1995-09-15	Chemische gasphasenabscheidung von diamanten.
SE8702923L (sv)	1987-07-21	Forfarande for syntes av diamanter
US4985227A (en)	1991-01-15	Method for synthesis or diamond
US6028014A (en)	2000-02-22	Plasma-enhanced oxide process optimization and material and apparatus therefor
MY110039A (en)	1997-11-29	Decomposition reactor
Devid et al.	2020	Dry reforming of methane under mild conditions using radio frequency plasma
IL84526A (en)	1991-09-16	Condensate diamond,apparatus and process for producing same
KR20090087461A (ko)	2009-08-17	플라즈마로부터 증착에 의하여 막을 형성하는 방법
Sweany	1980	Photolysis of matrix-isolated hydridotetracarbonylcobalt (I). Evidence for metal-hydrogen bond homolysis
Seyed-Matin et al.	2010	DC-pulsed plasma for dry reforming of methane to synthesis gas
Bardos et al.	1982	Differences between microwave and RF activation of nitrogen for the PECVD process
JPH0566359B2 (de)	1993-09-21
SU844178A1 (ru)	1981-07-07	Способ плазменной обработки
Fujii et al.	1992	Identification of intermediate radicals in the CH 4 microwave plasma by the Li+ attachment method
AU643724B2 (en)	1993-11-25	Preparation of hetero-atoms(s) containing hydrocarbons
JPH11322638A (ja)	1999-11-24	Ｃ２炭化水素、一酸化炭素および／または水素の製造法
Wang et al.	2003	Conversion of methane to C~ 2 hydrocarbons via cold plasma reaction
JPH0722607B2 (ja)	1995-03-15	プラズマ反応法による有機ハロゲン化合物の分解方法および装置
Wang et al.	2005	Direct conversion of methane into methanol and formaldehyde in an RF plasma environment II: Effects of experimental parameters
Sanchez et al.	1994	Study of the plasma discharges in diamond deposition with different O2 concentrations
Lunsford et al.	1994	The role of water in promoting the oxidative dehydrogenation of ethane
JPH01203297A (ja)	1989-08-16	燃焼炎によるダイヤモンドの合成法
RU93057864A (ru)	1997-01-20	Способ плазмохимического пиролиза углеводородов, преимущественно для получения ацетилена
JPS6442313A (en)	1989-02-14	Production of carbon
Naraoka et al.	1987	Kinetic studies on dehydrogenation reaction of 5, 6-dihydro-2, 4 (1H, 3H)-pyrimidinediones in aqueous solution induced by argon arc plasma or hydrogen-oxygen flame.