ATE130466T1 - Verfahren zur herstellung eines siliziumoxydfilmes. - Google Patents

Verfahren zur herstellung eines siliziumoxydfilmes.

Info

Publication number
ATE130466T1
ATE130466T1 AT90907409T AT90907409T ATE130466T1 AT E130466 T1 ATE130466 T1 AT E130466T1 AT 90907409 T AT90907409 T AT 90907409T AT 90907409 T AT90907409 T AT 90907409T AT E130466 T1 ATE130466 T1 AT E130466T1
Authority
AT
Austria
Prior art keywords
oxygen
oxide film
producing
film
substrate
Prior art date
Application number
AT90907409T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Mizuho Morita
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Application granted granted Critical
Publication of ATE130466T1 publication Critical patent/ATE130466T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/903—Catalyst aided deposition

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Chemically Coating (AREA)
AT90907409T 1989-05-07 1990-05-07 Verfahren zur herstellung eines siliziumoxydfilmes. ATE130466T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11395889 1989-05-07

Publications (1)

Publication Number Publication Date
ATE130466T1 true ATE130466T1 (de) 1995-12-15

Family

ID=14625472

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90907409T ATE130466T1 (de) 1989-05-07 1990-05-07 Verfahren zur herstellung eines siliziumoxydfilmes.

Country Status (7)

Country Link
US (1) US5360768A (de)
EP (1) EP0471845B1 (de)
JP (1) JP3122125B2 (de)
KR (1) KR920702020A (de)
AT (1) ATE130466T1 (de)
DE (1) DE69023644T2 (de)
WO (1) WO1990013911A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09251995A (ja) * 1989-05-07 1997-09-22 Tadahiro Omi 絶縁酸化膜の形成方法
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
CN1075243C (zh) * 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
JP3169114B2 (ja) * 1995-05-29 2001-05-21 信越半導体株式会社 単結晶薄膜の製造方法
WO1997015946A1 (en) * 1995-10-26 1997-05-01 Philips Electronics N.V. Method of manufacturing a semiconductor device
TW577128B (en) * 1997-03-05 2004-02-21 Hitachi Ltd Method for fabricating semiconductor integrated circuit device
KR100468665B1 (ko) * 1997-05-16 2005-08-29 삼성전자주식회사 산화막형성방법
JP3808975B2 (ja) * 1997-06-17 2006-08-16 忠弘 大見 半導体製造用水分の発生方法
JPH11283924A (ja) * 1998-03-27 1999-10-15 Super Silicon Kenkyusho:Kk 半導体ウエハ製造方法
US6644324B1 (en) * 2000-03-06 2003-11-11 Cymer, Inc. Laser discharge chamber passivation by plasma
GB2370043A (en) * 2000-12-12 2002-06-19 Mitel Corp Chemical treatment of silica films
JP4095326B2 (ja) * 2002-03-29 2008-06-04 株式会社東芝 半導体装置の製造方法及び半導体装置
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法
CN119742231A (zh) * 2024-11-07 2025-04-01 北方集成电路技术创新中心(北京)有限公司 一种氧化层的制造方法及半导体器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1189655B (de) * 1960-05-25 1965-03-25 Siemens Ag Verfahren zum Erzeugen einer stabilisierenden Oxydschicht auf einer Halbleiteroberflaeche
US3850687A (en) * 1971-05-26 1974-11-26 Rca Corp Method of densifying silicate glasses
CA954426A (en) * 1971-06-25 1974-09-10 Robert E. Albano Chemical growth of insulating layers on gallium arsenide
US3791862A (en) * 1971-12-22 1974-02-12 Bell Telephone Labor Inc Chemical growth of insulating layers on gallium arsenide
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3925107A (en) * 1974-11-11 1975-12-09 Ibm Method of stabilizing mos devices
JPS51114875A (en) * 1975-04-01 1976-10-08 Mitsubishi Electric Corp Semiconductor device manufacturing method
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
JPS5466075A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS55121653A (en) * 1979-03-14 1980-09-18 Fujitsu Ltd Method of treating surface of semiconductor substrate
JPS6329516A (ja) * 1986-07-22 1988-02-08 Mitsubishi Electric Corp 半導体装置の製造方法
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide

Also Published As

Publication number Publication date
EP0471845A1 (de) 1992-02-26
KR920702020A (ko) 1992-08-12
JP3122125B2 (ja) 2001-01-09
US5360768A (en) 1994-11-01
EP0471845B1 (de) 1995-11-15
DE69023644D1 (de) 1995-12-21
DE69023644T2 (de) 1996-04-18
EP0471845A4 (en) 1992-04-22
WO1990013911A1 (fr) 1990-11-15

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