ATE132657T1 - Abgeschirmte transistoranordnung - Google Patents

Abgeschirmte transistoranordnung

Info

Publication number
ATE132657T1
ATE132657T1 AT90305723T AT90305723T ATE132657T1 AT E132657 T1 ATE132657 T1 AT E132657T1 AT 90305723 T AT90305723 T AT 90305723T AT 90305723 T AT90305723 T AT 90305723T AT E132657 T1 ATE132657 T1 AT E132657T1
Authority
AT
Austria
Prior art keywords
shielded
shielded transistor
gate
transistor arrangement
transistor device
Prior art date
Application number
AT90305723T
Other languages
English (en)
Inventor
Miki Moyal
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE132657T1 publication Critical patent/ATE132657T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Microwave Amplifiers (AREA)
AT90305723T 1989-06-20 1990-05-25 Abgeschirmte transistoranordnung ATE132657T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/369,572 US4994891A (en) 1989-06-20 1989-06-20 Shielded transistor device

Publications (1)

Publication Number Publication Date
ATE132657T1 true ATE132657T1 (de) 1996-01-15

Family

ID=23456010

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90305723T ATE132657T1 (de) 1989-06-20 1990-05-25 Abgeschirmte transistoranordnung

Country Status (5)

Country Link
US (1) US4994891A (de)
EP (1) EP0404360B1 (de)
JP (1) JPH0334712A (de)
AT (1) ATE132657T1 (de)
DE (1) DE69024544T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3406140B2 (ja) * 1996-01-18 2003-05-12 シャープ株式会社 カラー画像読み取り装置
US6274896B1 (en) 2000-01-14 2001-08-14 Lexmark International, Inc. Drive transistor with fold gate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4308549A (en) * 1978-12-18 1981-12-29 Xerox Corporation High voltage field effect transistor
US4290078A (en) * 1979-05-30 1981-09-15 Xerox Corporation High voltage MOSFET without field plate structure
US4288802A (en) * 1979-08-17 1981-09-08 Xerox Corporation HVMOSFET Driver with single-poly gate structure
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4429237A (en) * 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver
NL8103218A (nl) * 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS60103827A (ja) * 1983-11-11 1985-06-08 Fujitsu Ltd 電圧変換回路
US4634894A (en) * 1985-03-04 1987-01-06 Advanced Micro Devices, Inc. Low power CMOS reference generator with low impedance driver
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor

Also Published As

Publication number Publication date
DE69024544D1 (de) 1996-02-15
EP0404360B1 (de) 1996-01-03
DE69024544T2 (de) 1996-08-29
JPH0334712A (ja) 1991-02-14
EP0404360A2 (de) 1990-12-27
EP0404360A3 (de) 1991-09-25
US4994891A (en) 1991-02-19

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee