ATE136158T1 - Silizium-auf-isolator-halbleiter-komponenten, die dünne schichten aus synthetischem diamant enthalten - Google Patents

Silizium-auf-isolator-halbleiter-komponenten, die dünne schichten aus synthetischem diamant enthalten

Info

Publication number
ATE136158T1
ATE136158T1 AT88310313T AT88310313T ATE136158T1 AT E136158 T1 ATE136158 T1 AT E136158T1 AT 88310313 T AT88310313 T AT 88310313T AT 88310313 T AT88310313 T AT 88310313T AT E136158 T1 ATE136158 T1 AT E136158T1
Authority
AT
Austria
Prior art keywords
silicon
thin layers
semiconductor components
synthetic diamond
components containing
Prior art date
Application number
AT88310313T
Other languages
English (en)
Inventor
Kramadhati Venkata Ravi
Original Assignee
Crystallume
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystallume filed Critical Crystallume
Application granted granted Critical
Publication of ATE136158T1 publication Critical patent/ATE136158T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2903—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3206—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Drying Of Semiconductors (AREA)
AT88310313T 1987-11-16 1988-11-02 Silizium-auf-isolator-halbleiter-komponenten, die dünne schichten aus synthetischem diamant enthalten ATE136158T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12130887A 1987-11-16 1987-11-16

Publications (1)

Publication Number Publication Date
ATE136158T1 true ATE136158T1 (de) 1996-04-15

Family

ID=22395836

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88310313T ATE136158T1 (de) 1987-11-16 1988-11-02 Silizium-auf-isolator-halbleiter-komponenten, die dünne schichten aus synthetischem diamant enthalten

Country Status (5)

Country Link
US (1) US5131963A (de)
EP (1) EP0317124B1 (de)
JP (1) JPH02110968A (de)
AT (1) ATE136158T1 (de)
DE (1) DE3855154D1 (de)

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US5561303A (en) * 1991-11-07 1996-10-01 Harris Corporation Silicon on diamond circuit structure
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
US5300188A (en) * 1992-11-13 1994-04-05 Kobe Development Corp. Process for making substantially smooth diamond
DE69225911T2 (de) * 1992-12-18 1999-02-11 Harris Corp., Melbourne, Fla. Silizium-auf-diamant-schaltungsstruktur und herstellungsverfahren dafür
CA2113336C (en) * 1993-01-25 2001-10-23 David J. Larkin Compound semi-conductors and controlled doping thereof
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
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US5272104A (en) * 1993-03-11 1993-12-21 Harris Corporation Bonded wafer process incorporating diamond insulator
US5376579A (en) * 1993-07-02 1994-12-27 The United States Of America As Represented By The Secretary Of The Air Force Schemes to form silicon-on-diamond structure
US5354717A (en) * 1993-07-29 1994-10-11 Motorola, Inc. Method for making a substrate structure with improved heat dissipation
FR2708794B1 (fr) * 1993-08-04 1995-09-15 Pouyet Int Module d'interconnexion rapide de deux lignes téléphoniques monopaires.
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
US5514242A (en) * 1993-12-30 1996-05-07 Saint Gobain/Norton Industrial Ceramics Corporation Method of forming a heat-sinked electronic component
US5488350A (en) * 1994-01-07 1996-01-30 Michigan State University Diamond film structures and methods related to same
US5474808A (en) * 1994-01-07 1995-12-12 Michigan State University Method of seeding diamond
JP3353987B2 (ja) * 1994-01-10 2002-12-09 株式会社半導体エネルギー研究所 素子作製方法
US5554415A (en) * 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5620754A (en) * 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5731046A (en) * 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
US5507987A (en) * 1994-04-28 1996-04-16 Saint Gobain/Norton Industrial Ceramics Corp. Method of making a free-standing diamond film with reduced bowing
EP0707741A4 (de) * 1994-05-05 1997-07-02 Siliconix Inc Oberflächenmontage und flip-chip-technologie
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DE4426420C1 (de) * 1994-07-26 1996-02-01 Daimler Benz Ag Substrat mit vergrabener Diamantschicht und Verfahren zu dessen Herstellung
DE4427715C1 (de) * 1994-08-05 1996-02-08 Daimler Benz Ag Komposit-Struktur mit auf einer Diamantschicht und/oder einer diamantähnlichen Schicht angeordneter Halbleiterschicht sowie ein Verfahren zu deren Herstellung
US5767578A (en) * 1994-10-12 1998-06-16 Siliconix Incorporated Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation
US5620745A (en) * 1995-12-19 1997-04-15 Saint Gobain/Norton Industrial Ceramics Corp. Method for coating a substrate with diamond film
US5907768A (en) * 1996-08-16 1999-05-25 Kobe Steel Usa Inc. Methods for fabricating microelectronic structures including semiconductor islands
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US6082200A (en) * 1997-09-19 2000-07-04 Board Of Trustees Operating Michigan State University Electronic device and method of use thereof
JP3144387B2 (ja) 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
US6573565B2 (en) * 1999-07-28 2003-06-03 International Business Machines Corporation Method and structure for providing improved thermal conduction for silicon semiconductor devices
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US6770966B2 (en) * 2001-07-31 2004-08-03 Intel Corporation Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
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US6936497B2 (en) * 2002-12-24 2005-08-30 Intel Corporation Method of forming electronic dies wherein each die has a layer of solid diamond
US20050017351A1 (en) * 2003-06-30 2005-01-27 Ravi Kramadhati V. Silicon on diamond wafers and devices
US7012011B2 (en) * 2004-06-24 2006-03-14 Intel Corporation Wafer-level diamond spreader
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JP4641817B2 (ja) * 2005-02-09 2011-03-02 株式会社神戸製鋼所 半導体装置用積層基板の製造方法及び半導体装置
GB0505752D0 (en) * 2005-03-21 2005-04-27 Element Six Ltd Diamond based substrate for gan devices
US20070232074A1 (en) * 2006-03-31 2007-10-04 Kramadhati Ravi Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach
US8236594B2 (en) * 2006-10-20 2012-08-07 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
US7799599B1 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Single crystal silicon carbide layers on diamond and associated methods
US7846767B1 (en) 2007-09-06 2010-12-07 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
US8395168B2 (en) * 2008-06-06 2013-03-12 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Semiconductor wafers and semiconductor devices with polishing stops and method of making the same
US20100200880A1 (en) * 2008-06-06 2010-08-12 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Semiconductor wafers and semiconductor devices and methods of making semiconductor wafers and devices
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Also Published As

Publication number Publication date
DE3855154D1 (de) 1996-05-02
US5131963A (en) 1992-07-21
EP0317124B1 (de) 1996-03-27
EP0317124A2 (de) 1989-05-24
EP0317124A3 (en) 1990-02-14
JPH02110968A (ja) 1990-04-24

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