ATE136399T1 - Elektronemittierende vorrichtung und elektronenstrahlerzeugungsgerät und diese vorrichtung verwendendes bilderzeugungsgerät - Google Patents

Elektronemittierende vorrichtung und elektronenstrahlerzeugungsgerät und diese vorrichtung verwendendes bilderzeugungsgerät

Info

Publication number
ATE136399T1
ATE136399T1 AT92117137T AT92117137T ATE136399T1 AT E136399 T1 ATE136399 T1 AT E136399T1 AT 92117137 T AT92117137 T AT 92117137T AT 92117137 T AT92117137 T AT 92117137T AT E136399 T1 ATE136399 T1 AT E136399T1
Authority
AT
Austria
Prior art keywords
electron
region
emitting device
beam generating
electron beam
Prior art date
Application number
AT92117137T
Other languages
English (en)
Inventor
Yoshikazu C O Canon Kabu Banno
Ichiro C O Canon Kabush Nomura
Hidetoshi C O Canon Kab Suzuki
Takashi C O Canon Kabushi Noma
Rie C O Canon Kabushiki K Ueno
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE136399T1 publication Critical patent/ATE136399T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/316Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123Flat display tubes
    • H01J31/125Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/027Manufacture of electrodes or electrode systems of cold cathodes of thin film cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/316Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
    • H01J2201/3165Surface conduction emission type cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
AT92117137T 1991-10-08 1992-10-07 Elektronemittierende vorrichtung und elektronenstrahlerzeugungsgerät und diese vorrichtung verwendendes bilderzeugungsgerät ATE136399T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26036091A JP3072795B2 (ja) 1991-10-08 1991-10-08 電子放出素子と該素子を用いた電子線発生装置及び画像形成装置

Publications (1)

Publication Number Publication Date
ATE136399T1 true ATE136399T1 (de) 1996-04-15

Family

ID=17346861

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92117137T ATE136399T1 (de) 1991-10-08 1992-10-07 Elektronemittierende vorrichtung und elektronenstrahlerzeugungsgerät und diese vorrichtung verwendendes bilderzeugungsgerät

Country Status (7)

Country Link
US (2) US5530314A (de)
EP (1) EP0536731B1 (de)
JP (1) JP3072795B2 (de)
AT (1) ATE136399T1 (de)
AU (2) AU667833B2 (de)
CA (1) CA2080091C (de)
DE (1) DE69209607T2 (de)

Families Citing this family (71)

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USRE40062E1 (en) 1987-07-15 2008-02-12 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
USRE39633E1 (en) 1987-07-15 2007-05-15 Canon Kabushiki Kaisha Display device with electron-emitting device with electron-emitting region insulated from electrodes
AU655677B2 (en) 1991-10-08 1995-01-05 Canon Kabushiki Kaisha Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device
CA2134543C (en) * 1993-10-28 2001-04-17 Aoji Isono Electron source, image forming apparatus using the same, method of manufacturing the same, and method of driving the same
AU724811B2 (en) * 1993-12-27 2000-09-28 Canon Kabushiki Kaisha Electron-emitting device
AU747313B2 (en) * 1993-12-27 2002-05-16 Canon Kabushiki Kaisha Electron source and image-forming apparatus
CA2299957C (en) * 1993-12-27 2003-04-29 Canon Kabushiki Kaisha Electron-emitting device and method of manufacturing the same as well as electron source and image-forming apparatus
JP3200270B2 (ja) * 1993-12-27 2001-08-20 キヤノン株式会社 表面伝導型電子放出素子、電子源、及び、画像形成装置の製造方法
AU747308B2 (en) * 1993-12-27 2002-05-16 Canon Kabushiki Kaisha Method of manufacturing an electron-emitting device
US6802752B1 (en) 1993-12-27 2004-10-12 Canon Kabushiki Kaisha Method of manufacturing electron emitting device
JP3072825B2 (ja) * 1994-07-20 2000-08-07 キヤノン株式会社 電子放出素子、電子源、及び、画像形成装置の製造方法
AU712966B2 (en) * 1994-09-22 1999-11-18 Canon Kabushiki Kaisha Electron-emitting device and method of manufacturing the same as well as electron source and image forming apparatus comprising such electron-emitting device
JP2916887B2 (ja) * 1994-11-29 1999-07-05 キヤノン株式会社 電子放出素子、電子源、画像形成装置の製造方法
JPH0982214A (ja) 1994-12-05 1997-03-28 Canon Inc 電子放出素子、電子源、及び画像形成装置
JP2909719B2 (ja) 1995-01-31 1999-06-23 キヤノン株式会社 電子線装置並びにその駆動方法
US5905335A (en) * 1995-02-03 1999-05-18 Canon Kabushiki Kaisha Electron generation using a fluorescent element and image forming using such electron generation
JP3083076B2 (ja) * 1995-04-21 2000-09-04 キヤノン株式会社 画像形成装置
JP3311246B2 (ja) 1995-08-23 2002-08-05 キヤノン株式会社 電子発生装置、画像表示装置およびそれらの駆動回路、駆動方法
US6140761A (en) * 1996-01-31 2000-10-31 Canon Kabushiki Kaisha Electron generation using a fluorescent element and image forming using such electron generation
JP3278375B2 (ja) 1996-03-28 2002-04-30 キヤノン株式会社 電子線発生装置、それを備える画像表示装置、およびそれらの駆動方法
US6231412B1 (en) * 1996-09-18 2001-05-15 Canon Kabushiki Kaisha Method of manufacturing and adjusting electron source array
US6208071B1 (en) * 1996-12-26 2001-03-27 Canon Kabushiki Kaisha Electron source substrate with low sodium upper surface
JP3352385B2 (ja) * 1997-03-21 2002-12-03 キヤノン株式会社 電子源基板およびそれを用いた電子装置の製造方法
JP3025249B2 (ja) 1997-12-03 2000-03-27 キヤノン株式会社 素子の駆動装置及び素子の駆動方法及び画像形成装置
KR100464294B1 (ko) * 1998-01-12 2005-05-27 삼성에스디아이 주식회사 저항체층겸용음극층을갖는필드에미션어레이및그제조방법
JP3323847B2 (ja) 1999-02-22 2002-09-09 キヤノン株式会社 電子放出素子、電子源および画像形成装置の製造方法
JP3323848B2 (ja) * 1999-02-26 2002-09-09 キヤノン株式会社 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置
JP3323851B2 (ja) * 1999-02-26 2002-09-09 キヤノン株式会社 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置
JP3323852B2 (ja) * 1999-02-26 2002-09-09 キヤノン株式会社 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置
US6376149B2 (en) 1999-05-26 2002-04-23 Yale University Methods and compositions for imaging acids in chemically amplified photoresists using pH-dependent fluorophores
KR100346548B1 (ko) * 2000-01-05 2002-07-26 삼성에스디아이 주식회사 표면 전도형 전자 방출원을 갖는 평판 디스플레이 장치
JP2001319564A (ja) * 2000-05-08 2001-11-16 Canon Inc 電子源形成用基板、該基板を用いた電子源並びに画像表示装置
US6963598B1 (en) 2000-05-23 2005-11-08 Finisar Corporation System and method for VCSEL polarization control
US6660074B1 (en) 2000-11-16 2003-12-09 Egl Company, Inc. Electrodes for gas discharge lamps; emission coatings therefore; and methods of making the same
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US20040247250A1 (en) * 2003-06-03 2004-12-09 Honeywell International Inc. Integrated sleeve pluggable package
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
KR20050014430A (ko) * 2003-07-31 2005-02-07 삼성에스디아이 주식회사 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
KR20050049842A (ko) * 2003-11-24 2005-05-27 삼성에스디아이 주식회사 전계 방출 표시장치
JP3840251B2 (ja) * 2004-03-10 2006-11-01 キヤノン株式会社 電子放出素子、電子源、画像表示装置及び該画像表示装置を用いた情報表示再生装置及びそれらの製造方法
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
KR20060104652A (ko) * 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
KR20060104657A (ko) * 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
JP4143665B2 (ja) * 2005-12-13 2008-09-03 キヤノン株式会社 電子放出素子の製造方法、及びそれを用いた、電子源並びに画像表示装置の製造方法
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
JP5936374B2 (ja) * 2011-02-15 2016-06-22 キヤノン株式会社 圧電振動型力センサ及びロボットハンド並びにロボットアーム
JP6335460B2 (ja) 2013-09-26 2018-05-30 キヤノン株式会社 ロボットシステムの制御装置及び指令値生成方法、並びにロボットシステムの制御方法
EP3366433B1 (de) 2017-02-09 2022-03-09 Canon Kabushiki Kaisha Verfahren zur steuerung eines roboters, verfahren zum lehren eines roboters und robotersystem
JP6964989B2 (ja) 2017-02-09 2021-11-10 キヤノン株式会社 制御方法、ロボットシステム、物品の製造方法、プログラム、及び記録媒体

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Also Published As

Publication number Publication date
JP3072795B2 (ja) 2000-08-07
EP0536731A1 (de) 1993-04-14
US5530314A (en) 1996-06-25
AU4576996A (en) 1996-05-16
CA2080091C (en) 1999-08-03
AU667833B2 (en) 1996-04-18
AU2629392A (en) 1993-04-22
US5645462A (en) 1997-07-08
EP0536731B1 (de) 1996-04-03
DE69209607T2 (de) 1996-08-29
CA2080091A1 (en) 1993-04-09
AU678121B2 (en) 1997-05-15
DE69209607D1 (de) 1996-05-09
JPH05101769A (ja) 1993-04-23

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