ATE155286T1 - Bilderzeugung und kontrolle eines prozesses, der einen fokussierten ionenstrahl verwendet - Google Patents

Bilderzeugung und kontrolle eines prozesses, der einen fokussierten ionenstrahl verwendet

Info

Publication number
ATE155286T1
ATE155286T1 AT89903363T AT89903363T ATE155286T1 AT E155286 T1 ATE155286 T1 AT E155286T1 AT 89903363 T AT89903363 T AT 89903363T AT 89903363 T AT89903363 T AT 89903363T AT E155286 T1 ATE155286 T1 AT E155286T1
Authority
AT
Austria
Prior art keywords
ion beam
target
focused ion
imaging
control
Prior art date
Application number
AT89903363T
Other languages
English (en)
Inventor
Billy W Ward
Michael L Ward
Original Assignee
Micrion Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micrion Corp filed Critical Micrion Corp
Application granted granted Critical
Publication of ATE155286T1 publication Critical patent/ATE155286T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Drying Of Semiconductors (AREA)
AT89903363T 1988-02-26 1989-02-09 Bilderzeugung und kontrolle eines prozesses, der einen fokussierten ionenstrahl verwendet ATE155286T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/160,578 US4874947A (en) 1988-02-26 1988-02-26 Focused ion beam imaging and process control

Publications (1)

Publication Number Publication Date
ATE155286T1 true ATE155286T1 (de) 1997-07-15

Family

ID=22577471

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89903363T ATE155286T1 (de) 1988-02-26 1989-02-09 Bilderzeugung und kontrolle eines prozesses, der einen fokussierten ionenstrahl verwendet

Country Status (6)

Country Link
US (1) US4874947A (de)
EP (1) EP0408602B1 (de)
JP (1) JP3001596B2 (de)
AT (1) ATE155286T1 (de)
DE (1) DE68928167T2 (de)
WO (1) WO1989008322A1 (de)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01154064A (ja) * 1987-12-10 1989-06-16 Fujitsu Ltd 微細パターンの形成方法
JP2569139B2 (ja) * 1988-08-24 1997-01-08 株式会社日立製作所 イオンビーム加工方法
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
JP2811073B2 (ja) * 1988-11-01 1998-10-15 セイコーインスツルメンツ株式会社 断面加工観察装置
JPH0316125A (ja) * 1989-03-30 1991-01-24 Mitsubishi Electric Corp 半導体装置の製造方法
DE3910491C1 (de) * 1989-03-31 1990-06-28 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
JPH0463433A (ja) * 1990-07-02 1992-02-28 Mitsubishi Electric Corp 半導体素子の配線装置およびそれを用いた配線方法
US5126576A (en) * 1990-12-13 1992-06-30 Applied Materials, Inc. Method and apparatus for controlling the rate of emission of electrons used for charge neutralization in ion implantation
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
JP2965739B2 (ja) * 1991-03-28 1999-10-18 大日本印刷株式会社 集束イオンビーム装置
US5146098A (en) * 1991-04-05 1992-09-08 Vlsi Technology, Inc. Ion beam contamination sensor
WO1994013010A1 (en) * 1991-04-15 1994-06-09 Fei Company Process of shaping features of semiconductor devices
GB2258083A (en) * 1991-07-25 1993-01-27 Kratos Analytical Ltd Sample analysis apparatus and method.
KR960012334B1 (ko) * 1992-03-31 1996-09-18 가부시끼가이샤 히다찌세이사꾸쇼 하전빔과 반응성가스를 사용해서 시료를 처리하는 방법 및 장치
US5272338A (en) * 1992-05-21 1993-12-21 The Pennsylvania Research Corporation Molecular imaging system
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US5840630A (en) * 1996-12-20 1998-11-24 Schlumberger Technologies Inc. FBI etching enhanced with 1,2 di-iodo-ethane
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US6332962B1 (en) * 1997-06-13 2001-12-25 Micrion Corporation Thin-film magnetic recording head manufacture using selective imaging
JP3260663B2 (ja) * 1997-07-23 2002-02-25 沖電気工業株式会社 ホール内表面の組成分布検出方法
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
US6453063B1 (en) 1998-01-28 2002-09-17 Chipworks Automatic focused ion beam imaging system and method
FR2793951B1 (fr) * 1999-05-21 2001-08-17 Centre Nat Etd Spatiales Procede et installation de traitement d'un substrat tel qu'un circuit integre par un faisceau focalise de particules electriquement neutres
US6414307B1 (en) * 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
RU2164718C1 (ru) * 2000-07-04 2001-03-27 Общество с ограниченной ответственностью "Агентство маркетинга научных разработок" Установка для формирования наноструктур на поверхности полупроводниковых пластин ионными пучками
US6629292B1 (en) 2000-10-06 2003-09-30 International Business Machines Corporation Method for forming graphical images in semiconductor devices
US6838389B2 (en) * 2002-08-02 2005-01-04 Veeco Instruments, Inc. High selectivity etching of a lead overlay structure
JP4141785B2 (ja) * 2002-10-07 2008-08-27 株式会社アドバンテスト パターン幅測長装置、パターン幅測長方法、及び電子ビーム露光装置
US7008803B2 (en) * 2002-10-24 2006-03-07 International Business Machines Corporation Method of reworking structures incorporating low-k dielectric materials
US7557361B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7554097B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7495232B2 (en) * 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7521693B2 (en) 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7518122B2 (en) 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US7321118B2 (en) * 2005-06-07 2008-01-22 Alis Corporation Scanning transmission ion microscope
US7485873B2 (en) * 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US7414243B2 (en) * 2005-06-07 2008-08-19 Alis Corporation Transmission ion microscope
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7511280B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7488952B2 (en) * 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7504639B2 (en) * 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7557358B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7368727B2 (en) * 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7320170B2 (en) * 2004-04-20 2008-01-22 Headway Technologies, Inc. Xenon ion beam to improve track width definition
US7075094B2 (en) * 2004-08-30 2006-07-11 Hitachi Global Storage Technologies Netherlands B.V. System, method, and apparatus for ion beam etching process stability using a reference for time scaling subsequent steps
US20070116373A1 (en) * 2005-11-23 2007-05-24 Sonosite, Inc. Multi-resolution adaptive filtering
US20070227883A1 (en) * 2006-03-20 2007-10-04 Ward Billy W Systems and methods for a helium ion pump
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
US10493559B2 (en) * 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
US8168961B2 (en) 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
KR101104213B1 (ko) 2009-09-28 2012-01-09 한국표준과학연구원 입자 빔 질량 분석기
US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
US20140295584A1 (en) * 2013-03-27 2014-10-02 International Business Machines Corporation Low energy collimated ion milling of semiconductor structures
US9201112B2 (en) 2013-12-09 2015-12-01 International Business Machines Corporation Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
US9881817B1 (en) 2016-06-02 2018-01-30 Multibeam Corporation Precision substrate material multi-processing using miniature-column charged particle beam arrays
US10665421B2 (en) * 2018-10-10 2020-05-26 Applied Materials, Inc. In-situ beam profile metrology
MX2021011721A (es) * 2019-03-27 2021-10-22 Sgs North America Inc Dispositivo para probar molienda de una muestra de mena.
US20230095798A1 (en) * 2021-09-30 2023-03-30 Fei Company Methods and systems for elemental mapping
WO2025002791A1 (en) * 2023-06-27 2025-01-02 Carl Zeiss Smt Gmbh Improved method and apparatus for charge compensation during 3d tomography

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces
US3644044A (en) * 1970-05-20 1972-02-22 Bell Telephone Labor Inc Method of analyzing a solid surface from photon emissions of sputtered particles
US3767925A (en) * 1972-03-08 1973-10-23 Bell Telephone Labor Inc Apparatus and method for determining the spatial distribution of constituents and contaminants of solids
US4135097A (en) * 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
FR2443085A1 (fr) * 1978-07-24 1980-06-27 Thomson Csf Dispositif de microlithographie par bombardement electronique
US4393311A (en) * 1980-06-13 1983-07-12 Bell Telephone Laboratories, Incorporated Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS58106750A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法
JPS58110956U (ja) * 1982-01-22 1983-07-28 株式会社日立製作所 荷電粒子照射装置
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
US4532402A (en) * 1983-09-02 1985-07-30 Xrl, Inc. Method and apparatus for positioning a focused beam on an integrated circuit
US4661702A (en) * 1984-10-24 1987-04-28 The Perkin-Elmer Corporation Primary ion beam raster gating technique for secondary ion mass spectrometer system
US4633084A (en) * 1985-01-16 1986-12-30 The United States Of America As Represented By The United States Department Of Energy High efficiency direct detection of ions from resonance ionization of sputtered atoms
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing

Also Published As

Publication number Publication date
DE68928167T2 (de) 1998-02-19
US4874947A (en) 1989-10-17
DE68928167D1 (de) 1997-08-14
WO1989008322A1 (en) 1989-09-08
JP3001596B2 (ja) 2000-01-24
EP0408602A1 (de) 1991-01-23
EP0408602B1 (de) 1997-07-09
JPH03505647A (ja) 1991-12-05

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