ATE157482T1 - Elektrode für einen vertikalen feldeffekttransistor und verfahren zu deren herstellung - Google Patents

Elektrode für einen vertikalen feldeffekttransistor und verfahren zu deren herstellung

Info

Publication number
ATE157482T1
ATE157482T1 AT91304828T AT91304828T ATE157482T1 AT E157482 T1 ATE157482 T1 AT E157482T1 AT 91304828 T AT91304828 T AT 91304828T AT 91304828 T AT91304828 T AT 91304828T AT E157482 T1 ATE157482 T1 AT E157482T1
Authority
AT
Austria
Prior art keywords
area
semiconductor
electrode
conductive type
production
Prior art date
Application number
AT91304828T
Other languages
English (en)
Inventor
Hayao Ohzu
Tetsunobu Kochi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE157482T1 publication Critical patent/ATE157482T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
AT91304828T 1990-05-31 1991-05-29 Elektrode für einen vertikalen feldeffekttransistor und verfahren zu deren herstellung ATE157482T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13961890 1990-05-31
JP20814590 1990-08-08

Publications (1)

Publication Number Publication Date
ATE157482T1 true ATE157482T1 (de) 1997-09-15

Family

ID=26472367

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91304828T ATE157482T1 (de) 1990-05-31 1991-05-29 Elektrode für einen vertikalen feldeffekttransistor und verfahren zu deren herstellung

Country Status (10)

Country Link
US (2) US5378914A (de)
EP (1) EP0459771B1 (de)
JP (1) JP3067263B2 (de)
CN (1) CN1052343C (de)
AT (1) ATE157482T1 (de)
DE (1) DE69127402T2 (de)
DK (1) DK0459771T3 (de)
ES (1) ES2104668T3 (de)
GR (1) GR3025139T3 (de)
MY (1) MY107475A (de)

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Also Published As

Publication number Publication date
ES2104668T3 (es) 1997-10-16
US5583075A (en) 1996-12-10
DE69127402D1 (de) 1997-10-02
CN1057736A (zh) 1992-01-08
MY107475A (en) 1995-12-30
EP0459771A3 (en) 1992-02-05
US5378914A (en) 1995-01-03
EP0459771A2 (de) 1991-12-04
GR3025139T3 (en) 1998-02-27
CN1052343C (zh) 2000-05-10
JP3067263B2 (ja) 2000-07-17
EP0459771B1 (de) 1997-08-27
DE69127402T2 (de) 1998-01-02
JPH04226075A (ja) 1992-08-14
DK0459771T3 (da) 1997-09-22

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Legal Events

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UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee