ATE160181T1 - Vorrichtung zur elektrolytischen oxidation von silizium-wafern - Google Patents

Vorrichtung zur elektrolytischen oxidation von silizium-wafern

Info

Publication number: ATE160181T1
Authority: AT; Austria
Prior art keywords: silicon wafer; anode; pct; cathode; electrolytic oxidation
Prior art date: 1993-03-17

Application number

AT94910635T

Other languages

English (en)

Inventor

Herman Georg Grimmeiss

Anders Christer Lindbladh

Carl-Frederik Anton Mandenius

Mats Otto Persson

Original Assignee

Daimler Benz Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-03-17

Filing date

1994-03-17

Publication date

1997-11-15

1994-03-17 Application filed by Daimler Benz Ag filed Critical Daimler Benz Ag

1997-11-15 Application granted granted Critical

1997-11-15 Publication of ATE160181T1 publication Critical patent/ATE160181T1/de

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 7
229910052710 silicon Inorganic materials 0.000 title abstract 7
239000010703 silicon Substances 0.000 title abstract 7
235000012431 wafers Nutrition 0.000 title abstract 7
230000003647 oxidation Effects 0.000 title abstract 2
238000007254 oxidation reaction Methods 0.000 title abstract 2
125000006850 spacer group Chemical group 0.000 abstract 2
239000003792 electrolyte Substances 0.000 abstract 1
230000005484 gravity Effects 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Formation Of Insulating Films (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Weting (AREA)
Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

AT94910635T 1993-03-17 1994-03-17 Vorrichtung zur elektrolytischen oxidation von silizium-wafern ATE160181T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
SE9300881A SE500333C2 (sv)	1993-03-17	1993-03-17	Anordning för elektrolytisk oxidation av kiselskivor

Publications (1)

Publication Number	Publication Date
ATE160181T1 true ATE160181T1 (de)	1997-11-15

Family

ID=20389257

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT94910635T ATE160181T1 (de)	1993-03-17	1994-03-17	Vorrichtung zur elektrolytischen oxidation von silizium-wafern

Country Status (7)

Country	Link
US (1)	US5725742A (de)
EP (1)	EP0689621B1 (de)
JP (1)	JPH08507829A (de)
AT (1)	ATE160181T1 (de)
DE (1)	DE69406777T2 (de)
SE (1)	SE500333C2 (de)
WO (1)	WO1994021845A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19914905A1 (de) *	1999-04-01	2000-10-05	Bosch Gmbh Robert	Elektrochemische Ätzanlage und Verfahren zur Ätzung eines Ätzkörpers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3324015A (en) *	1963-12-03	1967-06-06	Hughes Aircraft Co	Electroplating process for semiconductor devices
US3419480A (en) *	1965-03-12	1968-12-31	Westinghouse Electric Corp	Anodic oxidation
DE1496883A1 (de) *	1965-09-20	1969-08-14	Licentia Gmbh	Anordnung zur elektrolytischen Oxydation von Siliciumscheiben unter Einbau von Dotierungsmitteln
US4043894A (en) *	1976-05-20	1977-08-23	Burroughs Corporation	Electrochemical anodization fixture for semiconductor wafers
FR2444500A1 (fr) *	1978-12-20	1980-07-18	Ecopol	Dispositif d'electrolyse
JP2737416B2 (ja) *	1991-01-31	1998-04-08	日本電気株式会社	めっき処理装置
JP2734269B2 (ja) *	1991-12-26	1998-03-30	日本電気株式会社	半導体製造装置
JP3200468B2 (ja) *	1992-05-21	2001-08-20	日本エレクトロプレイテイング・エンジニヤース株式会社	ウエーハ用めっき装置
DE69312636T2 (de) *	1992-11-09	1998-02-05	Canon Kk	Anodisierungsapparat mit einer Trägervorrichtung für das zu behandelnde Substrat

1993
- 1993-03-17 SE SE9300881A patent/SE500333C2/sv unknown
1994
- 1994-03-17 AT AT94910635T patent/ATE160181T1/de active
- 1994-03-17 JP JP6520940A patent/JPH08507829A/ja active Pending
- 1994-03-17 US US08/522,406 patent/US5725742A/en not_active Expired - Fee Related
- 1994-03-17 WO PCT/SE1994/000237 patent/WO1994021845A1/en not_active Ceased
- 1994-03-17 EP EP94910635A patent/EP0689621B1/de not_active Expired - Lifetime
- 1994-03-17 DE DE69406777T patent/DE69406777T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH08507829A (ja)	1996-08-20
SE9300881D0 (sv)	1993-03-17
WO1994021845A1 (en)	1994-09-29
EP0689621B1 (de)	1997-11-12
DE69406777D1 (de)	1997-12-18
DE69406777T2 (de)	1998-05-28
EP0689621A1 (de)	1996-01-03
SE9300881L (sv)	1994-06-06
US5725742A (en)	1998-03-10
SE500333C2 (sv)	1994-06-06

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