ATE170330T1 - Diagnostische scheibe - Google Patents

Diagnostische scheibe

Info

Publication number
ATE170330T1
ATE170330T1 AT95117154T AT95117154T ATE170330T1 AT E170330 T1 ATE170330 T1 AT E170330T1 AT 95117154 T AT95117154 T AT 95117154T AT 95117154 T AT95117154 T AT 95117154T AT E170330 T1 ATE170330 T1 AT E170330T1
Authority
AT
Austria
Prior art keywords
wafer
grid
central aperture
discriminator
plate
Prior art date
Application number
AT95117154T
Other languages
English (en)
Inventor
Peter K Loewenhardt
Hiroji Hanawa
Gerald Zheyao Yin
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE170330T1 publication Critical patent/ATE170330T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Lubrication Of Internal Combustion Engines (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Holo Graphy (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
AT95117154T 1994-10-31 1995-10-31 Diagnostische scheibe ATE170330T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/331,836 US5451784A (en) 1994-10-31 1994-10-31 Composite diagnostic wafer for semiconductor wafer processing systems

Publications (1)

Publication Number Publication Date
ATE170330T1 true ATE170330T1 (de) 1998-09-15

Family

ID=23295570

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95117154T ATE170330T1 (de) 1994-10-31 1995-10-31 Diagnostische scheibe

Country Status (6)

Country Link
US (1) US5451784A (de)
EP (1) EP0709874B1 (de)
JP (1) JPH08213374A (de)
KR (1) KR100353957B1 (de)
AT (1) ATE170330T1 (de)
DE (1) DE69504275T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
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US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
US5565681A (en) * 1995-03-23 1996-10-15 Applied Materials, Inc. Ion energy analyzer with an electrically controlled geometric filter
US5801386A (en) * 1995-12-11 1998-09-01 Applied Materials, Inc. Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same
GB9620151D0 (en) * 1996-09-27 1996-11-13 Surface Tech Sys Ltd Plasma processing apparatus
JP3006535B2 (ja) * 1997-04-07 2000-02-07 日本電気株式会社 イオン注入方法および装置
US5989349A (en) * 1997-06-24 1999-11-23 Applied Materials, Inc. Diagnostic pedestal assembly for a semiconductor wafer processing system
US6406785B1 (en) * 1998-07-16 2002-06-18 Schlegel Corporation Weatherseal having a contact layer with thermoplastic particles in a thermoset carrier
WO2000055900A1 (en) * 1999-03-17 2000-09-21 Hitachi, Ltd. Ion current density measuring method and instrument, and semiconductor device manufacturing method
KR100674624B1 (ko) * 1999-05-07 2007-01-25 동경 엘렉트론 주식회사 센서기판, 기판처리방법 및 기판처리장치
US6409896B2 (en) 1999-12-01 2002-06-25 Applied Materials, Inc. Method and apparatus for semiconductor wafer process monitoring
TW525213B (en) * 2000-02-16 2003-03-21 Hitachi Ltd Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units
AU2001259055A1 (en) 2000-05-05 2001-11-20 Tokyo Electron Limited Measuring plasma uniformity in-situ at wafer level
US6741446B2 (en) * 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
US7960670B2 (en) * 2005-05-03 2011-06-14 Kla-Tencor Corporation Methods of and apparatuses for measuring electrical parameters of a plasma process
US20030139043A1 (en) * 2001-12-11 2003-07-24 Steve Marcus Apparatus and method for monitoring a plasma etch process
US6812725B2 (en) 2002-02-27 2004-11-02 Hitachi, Ltd. Semiconductor processing apparatus and wafer sensor module
JP4175456B2 (ja) 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
KR100450979B1 (ko) * 2002-05-02 2004-10-02 강대환 플라즈마 진단용 웨이퍼 제조 방법
US20050011611A1 (en) * 2002-07-12 2005-01-20 Mahoney Leonard J. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
DE10258118A1 (de) * 2002-12-06 2004-07-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Messen und zur Bestimmung von Ladungsträgerströmen und davon ableitbaren Größen in ionen- und plasmagestützten Prozessen
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
JP4008899B2 (ja) * 2003-09-08 2007-11-14 株式会社東芝 半導体装置の製造システムおよび半導体装置の製造方法
JP3868427B2 (ja) 2004-02-23 2007-01-17 株式会社半導体理工学研究センター プラズマプロセスのリアルタイムモニタ装置
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US20050284570A1 (en) * 2004-06-24 2005-12-29 Doran Daniel B Diagnostic plasma measurement device having patterned sensors and features
US20060043063A1 (en) * 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
US20060049036A1 (en) * 2004-09-09 2006-03-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for real-time control and monitor of deposition processes
US20060171848A1 (en) * 2005-01-31 2006-08-03 Advanced Energy Industries, Inc. Diagnostic plasma sensors for endpoint and end-of-life detection
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
KR100782370B1 (ko) * 2006-08-04 2007-12-07 삼성전자주식회사 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템
US7867409B2 (en) * 2007-03-29 2011-01-11 Tokyo Electron Limited Control of ion angular distribution function at wafer surface
US7875859B2 (en) * 2008-03-31 2011-01-25 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing and operating
US7777179B2 (en) * 2008-03-31 2010-08-17 Tokyo Electron Limited Two-grid ion energy analyzer and methods of manufacturing and operating
US8361610B2 (en) 2009-07-02 2013-01-29 E I Du Pont De Nemours And Company Composite with low content of metal
SG177442A1 (en) 2009-07-02 2012-02-28 Du Pont Semiconductor manufacture component
KR101967490B1 (ko) 2011-03-28 2019-04-09 도쿄엘렉트론가부시키가이샤 이온 에너지 분석기, 그 내부에서의 전기 신호화 방법, 그 제작 방법 및 작동 방법
TW201705183A (zh) * 2015-07-31 2017-02-01 逢甲大學 超高頻電漿模擬裝置與超高頻電漿特性量測方法
JP2017188236A (ja) * 2016-04-03 2017-10-12 国立大学法人東北大学 プラズマ処理装置におけるプラズマ状態の計測方法及びその計測方法に使用されるプラズマ計測装置
EP3968353A1 (de) 2020-09-10 2022-03-16 Impedans Ltd Vorrichtung zur ionenenergieanalyse von plasmaprozessen
US11264212B1 (en) 2020-09-29 2022-03-01 Tokyo Electron Limited Ion angle detector
EP4177928B1 (de) * 2021-11-09 2024-01-03 Impedans Ltd Verfahren zur zweistufigen ionenstrommessung in einer vorrichtung zur analyse von plasmaprozessen
CN119487618A (zh) * 2022-06-30 2025-02-18 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置
CN119422231A (zh) * 2022-06-30 2025-02-11 东京毅力科创株式会社 调节方法和等离子体处理装置
EP4625471A3 (de) * 2022-11-25 2025-12-31 Applied Materials, Inc. Abgeschirmte vorrichtung zur ionenenergieanalyse von plasmaprozessen

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1596105A (en) * 1978-02-20 1981-08-19 Nat Res Dev Electrostatic engergy analysis
JPS56126918A (en) * 1980-03-11 1981-10-05 Hitachi Ltd Injecting device for ion
US4680468A (en) * 1985-08-05 1987-07-14 Canadian Patents And Development Limited-Societe Canadienne Des Brevets Et D'exploitation Limitee Particle detector
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4731538A (en) * 1986-06-20 1988-03-15 Galileo Electro-Optics Corp. Microchannel plate ion detector
JPS63126148A (ja) * 1986-11-14 1988-05-30 Hiroshi Daimon 荷電粒子アナライザ−
US4831267A (en) * 1987-02-16 1989-05-16 Siemens Aktiengesellschaft Detector for charged particles
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
GB2262649B (en) * 1991-12-13 1995-03-01 Marconi Gec Ltd Energy analyser
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems

Also Published As

Publication number Publication date
US5451784A (en) 1995-09-19
EP0709874B1 (de) 1998-08-26
DE69504275T2 (de) 1999-05-06
KR960015837A (ko) 1996-05-22
DE69504275D1 (de) 1998-10-01
EP0709874A1 (de) 1996-05-01
KR100353957B1 (ko) 2002-12-26
JPH08213374A (ja) 1996-08-20

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