ATE203356T1 - Durch heisse elektroneninjektion programmierbare und durch tunneleffekt löschbare pmos- speicherzelle - Google Patents

Durch heisse elektroneninjektion programmierbare und durch tunneleffekt löschbare pmos- speicherzelle

Info

Publication number
ATE203356T1
ATE203356T1 AT96307350T AT96307350T ATE203356T1 AT E203356 T1 ATE203356 T1 AT E203356T1 AT 96307350 T AT96307350 T AT 96307350T AT 96307350 T AT96307350 T AT 96307350T AT E203356 T1 ATE203356 T1 AT E203356T1
Authority
AT
Austria
Prior art keywords
well
floating gate
drain
memory cell
electron injection
Prior art date
Application number
AT96307350T
Other languages
English (en)
Inventor
Shang-De T Chang
Original Assignee
Programmable Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Programmable Microelectronics filed Critical Programmable Microelectronics
Application granted granted Critical
Publication of ATE203356T1 publication Critical patent/ATE203356T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
AT96307350T 1995-11-14 1996-10-09 Durch heisse elektroneninjektion programmierbare und durch tunneleffekt löschbare pmos- speicherzelle ATE203356T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/557,589 US5687118A (en) 1995-11-14 1995-11-14 PMOS memory cell with hot electron injection programming and tunnelling erasing

Publications (1)

Publication Number Publication Date
ATE203356T1 true ATE203356T1 (de) 2001-08-15

Family

ID=24226069

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96307350T ATE203356T1 (de) 1995-11-14 1996-10-09 Durch heisse elektroneninjektion programmierbare und durch tunneleffekt löschbare pmos- speicherzelle

Country Status (6)

Country Link
US (1) US5687118A (de)
EP (1) EP0778623B1 (de)
JP (1) JP3124936B2 (de)
AT (1) ATE203356T1 (de)
DE (2) DE69613947T2 (de)
TW (1) TW287321B (de)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5990512A (en) * 1995-03-07 1999-11-23 California Institute Of Technology Hole impact ionization mechanism of hot electron injection and four-terminal ρFET semiconductor structure for long-term learning
US5875126A (en) * 1995-09-29 1999-02-23 California Institute Of Technology Autozeroing floating gate amplifier
US5825063A (en) * 1995-03-07 1998-10-20 California Institute Of Technology Three-terminal silicon synaptic device
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US6144581A (en) * 1996-07-24 2000-11-07 California Institute Of Technology pMOS EEPROM non-volatile data storage
US5898613A (en) * 1996-07-24 1999-04-27 California Institute Of Technology pMOS analog EEPROM cell
JP3878681B2 (ja) * 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US5912842A (en) * 1995-11-14 1999-06-15 Programmable Microelectronics Corp. Nonvolatile PMOS two transistor memory cell and array
JPH09293842A (ja) * 1996-04-26 1997-11-11 Ricoh Co Ltd 半導体記憶装置の製造方法
US5861650A (en) * 1996-08-09 1999-01-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device comprising an FPGA
US5914514A (en) * 1996-09-27 1999-06-22 Xilinx, Inc. Two transistor flash EPROM cell
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5986931A (en) * 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US5973967A (en) * 1997-01-03 1999-10-26 Programmable Microelectronics Corporation Page buffer having negative voltage level shifter
US5856946A (en) * 1997-04-09 1999-01-05 Advanced Micro Devices, Inc. Memory cell programming with controlled current injection
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
US6026026A (en) * 1997-12-05 2000-02-15 Hyundai Electronics America, Inc. Self-convergence of post-erase threshold voltages in a flash memory cell using transient response
JP3378879B2 (ja) * 1997-12-10 2003-02-17 松下電器産業株式会社 不揮発性半導体記憶装置及びその駆動方法
US5903497A (en) * 1997-12-22 1999-05-11 Programmable Microelectronics Corporation Integrated program verify page buffer
DE59913841D1 (de) 1998-02-12 2006-10-26 Infineon Technologies Ag EEPROM und Verfahren zur Ansteuerung eines EEPROM
US6081451A (en) * 1998-04-01 2000-06-27 National Semiconductor Corporation Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages
US6157574A (en) * 1998-04-01 2000-12-05 National Semiconductor Corporation Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data
US6141246A (en) * 1998-04-01 2000-10-31 National Semiconductor Corporation Memory device with sense amplifier that sets the voltage drop across the cells of the device
US6055185A (en) * 1998-04-01 2000-04-25 National Semiconductor Corporation Single-poly EPROM cell with CMOS compatible programming voltages
US6118691A (en) * 1998-04-01 2000-09-12 National Semiconductor Corporation Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor that reduces the voltage across an unprogrammed memory transistor during a read
US5862082A (en) * 1998-04-16 1999-01-19 Xilinx, Inc. Two transistor flash EEprom cell and method of operating same
US6160737A (en) * 1998-08-10 2000-12-12 Aplus Flash Technology, Inc. Bias conditions for repair, program and erase operations of non-volatile memory
JP3344331B2 (ja) * 1998-09-30 2002-11-11 日本電気株式会社 不揮発性半導体記憶装置
WO2000055918A1 (en) * 1999-03-18 2000-09-21 Cavendish Kinetics Limited Flash memory cell having a flexible element
KR20010072189A (ko) * 1999-06-04 2001-07-31 롤페스 요하네스 게라투스 알베르투스 반도체 디바이스
JP2001007227A (ja) 1999-06-23 2001-01-12 Seiko Epson Corp 不揮発性半導体記憶装置
JP3743486B2 (ja) 1999-06-23 2006-02-08 セイコーエプソン株式会社 不揮発性メモリトランジスタを含む半導体装置の製造方法
US6522587B1 (en) 1999-06-23 2003-02-18 Seiko Epson Corporation Non-volatile semiconductor memory devices
JP2001060674A (ja) 1999-08-20 2001-03-06 Seiko Epson Corp 不揮発性メモリトランジスタを含む半導体装置
DE19941684B4 (de) * 1999-09-01 2004-08-26 Infineon Technologies Ag Halbleiterbauelement als Verzögerungselement
JP3587100B2 (ja) 1999-09-17 2004-11-10 セイコーエプソン株式会社 不揮発性メモリトランジスタを含む半導体装置の製造方法
US6307781B1 (en) * 1999-09-30 2001-10-23 Infineon Technologies Aktiengesellschaft Two transistor flash memory cell
KR100379553B1 (ko) * 2001-01-11 2003-04-10 주식회사 하이닉스반도체 플래쉬 메모리 셀의 어레이 및 이를 이용한 데이터프로그램방법 및 소거방법
FR2823363B1 (fr) 2001-04-05 2003-12-12 St Microelectronics Sa Procede d'effacement d'une cellule-memoire de type famos, et cellule-memoire correspondante
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
US20040206999A1 (en) * 2002-05-09 2004-10-21 Impinj, Inc., A Delaware Corporation Metal dielectric semiconductor floating gate variable capacitor
US6958646B1 (en) 2002-05-28 2005-10-25 Impinj, Inc. Autozeroing floating-gate amplifier
US6950342B2 (en) * 2002-07-05 2005-09-27 Impinj, Inc. Differential floating gate nonvolatile memories
US7221596B2 (en) * 2002-07-05 2007-05-22 Impinj, Inc. pFET nonvolatile memory
US20050030827A1 (en) * 2002-09-16 2005-02-10 Impinj, Inc., A Delaware Corporation PMOS memory cell
US7149118B2 (en) * 2002-09-16 2006-12-12 Impinj, Inc. Method and apparatus for programming single-poly pFET-based nonvolatile memory cells
US6853583B2 (en) * 2002-09-16 2005-02-08 Impinj, Inc. Method and apparatus for preventing overtunneling in pFET-based nonvolatile memory cells
US7212446B2 (en) * 2002-09-16 2007-05-01 Impinj, Inc. Counteracting overtunneling in nonvolatile memory cells using charge extraction control
KR100532429B1 (ko) * 2003-04-18 2005-11-30 삼성전자주식회사 바이트 오퍼레이션 비휘발성 반도체 메모리 장치
US7419895B2 (en) * 2003-10-23 2008-09-02 Micron Technology, Inc. NAND memory arrays
US7262457B2 (en) * 2004-01-05 2007-08-28 Ememory Technology Inc. Non-volatile memory cell
TWI228800B (en) * 2003-11-06 2005-03-01 Ememory Technology Inc Non-volatile memory cell and related method
US20050145924A1 (en) * 2004-01-07 2005-07-07 I-Sheng Liu Source/drain adjust implant
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US6965538B1 (en) * 2004-08-03 2005-11-15 Micron Technology, Inc. Programming and evaluating through PMOS injection
JP3962769B2 (ja) 2004-11-01 2007-08-22 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその書込方法
KR100663974B1 (ko) * 2005-02-03 2007-01-02 재단법인서울대학교산학협력재단 복수개의 도핑층을 갖는 전하트랩 메모리 셀의 구조 및 그 제조방법과 동작방법
JP4522879B2 (ja) * 2005-02-07 2010-08-11 株式会社Genusion 不揮発性半導体記憶装置
US7257033B2 (en) * 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
JP4783044B2 (ja) * 2005-03-23 2011-09-28 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置
US7679957B2 (en) * 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
JP4832835B2 (ja) * 2005-09-13 2011-12-07 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置の読み書き制御方法
TWI311796B (en) * 2005-11-17 2009-07-01 Ememory Technology Inc Semiconductor device and manufacturing method thereof
US20070247915A1 (en) * 2006-04-21 2007-10-25 Intersil Americas Inc. Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxide
US7391652B2 (en) * 2006-05-05 2008-06-24 Macronix International Co., Ltd. Method of programming and erasing a p-channel BE-SONOS NAND flash memory
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7505325B2 (en) * 2006-09-28 2009-03-17 Chingis Technology Corporation Low voltage low capacitance flash memory array
KR100861749B1 (ko) * 2006-12-22 2008-10-09 최웅림 2ｔ ｎｏｒ형 비휘발성 메모리 셀 어레이, 2ｔ ｎｏｒ형비휘발성 메모리의 데이터 처리방법
US7903465B2 (en) * 2007-04-24 2011-03-08 Intersil Americas Inc. Memory array of floating gate-based non-volatile memory cells
US7688627B2 (en) * 2007-04-24 2010-03-30 Intersil Americas Inc. Flash memory array of floating gate-based non-volatile memory cells
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
US7515478B2 (en) * 2007-08-20 2009-04-07 Nantronics Semiconductor, Inc. CMOS logic compatible non-volatile memory cell structure, operation, and array configuration
US8339862B2 (en) * 2007-12-25 2012-12-25 Genusion, Inc. Nonvolatile semiconductor memory device
EP2075798A1 (de) * 2007-12-25 2009-07-01 TPO Displays Corp. Speicherdateneinheit basierend auf durch heisse Ladungsträger hervorgerufenen Stress
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
CN101770955B (zh) * 2008-12-31 2011-09-14 北大方正集团有限公司 一种制作p型金属氧化物半导体的方法
KR101591531B1 (ko) * 2009-12-31 2016-02-03 주식회사 동부하이텍 반도체 메모리 소자, 반도체 메모리 소자의 제조 방법 및 반도체 메모리 소자의 셀어레이
US8369154B2 (en) 2010-03-24 2013-02-05 Ememory Technology Inc. Channel hot electron injection programming method and related device
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method
US8536039B2 (en) * 2010-03-25 2013-09-17 Taiwan Semiconductor Manufacturing Co., Ltd. Nano-crystal gate structure for non-volatile memory
US8917551B2 (en) * 2011-01-11 2014-12-23 Aplus Flash Technology, Inc. Flexible 2T-based fuzzy and certain matching arrays
CN102176468A (zh) * 2011-01-28 2011-09-07 上海宏力半导体制造有限公司 P型mos存储单元
JP5238859B2 (ja) * 2011-07-29 2013-07-17 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその読み書き制御方法
JP5888555B2 (ja) * 2012-01-25 2016-03-22 エスアイアイ・セミコンダクタ株式会社 不揮発性半導体記憶装置
US9190148B2 (en) * 2012-03-21 2015-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of UV programming of non-volatile semiconductor memory
US8953380B1 (en) * 2013-12-02 2015-02-10 Cypress Semiconductor Corporation Systems, methods, and apparatus for memory cells with common source lines
EP3002760A1 (de) * 2014-09-30 2016-04-06 Anvo-Systems Dresden GmbH Flash-speicheranordnung
JP6266688B2 (ja) * 2016-04-25 2018-01-24 株式会社フローディア 不揮発性半導体記憶装置
JP7070032B2 (ja) 2018-04-25 2022-05-18 ユナイテッド・セミコンダクター・ジャパン株式会社 不揮発性半導体記憶装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4435790A (en) * 1980-12-24 1984-03-06 Fairchild Camera And Instrument Corporation High speed, nonvolatile, electrically erasable memory cell and system
US4479203A (en) * 1981-11-16 1984-10-23 Motorola, Inc. Electrically erasable programmable read only memory cell
JPS614240A (ja) * 1984-06-18 1986-01-10 Toshiba Corp 半導体装置の製造方法
IT1201834B (it) * 1986-07-10 1989-02-02 Sgs Microelettronica Spa Dispositivo di memoria non volatile a semiconduttore
JP2504599B2 (ja) * 1990-02-23 1996-06-05 株式会社東芝 不揮発性半導体記憶装置
KR960012303B1 (ko) * 1992-08-18 1996-09-18 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
JP2825407B2 (ja) * 1993-04-01 1998-11-18 株式会社東芝 不揮発性半導体記憶装置
US5416738A (en) * 1994-05-27 1995-05-16 Alliance Semiconductor Corporation Single transistor flash EPROM cell and method of operation

Also Published As

Publication number Publication date
TW287321B (en) 1996-10-01
EP0778623A2 (de) 1997-06-11
DE778623T1 (de) 1998-03-05
JP3124936B2 (ja) 2001-01-15
DE69613947D1 (de) 2001-08-23
EP0778623A3 (de) 1997-09-03
DE69613947T2 (de) 2001-11-15
JPH09260518A (ja) 1997-10-03
US5687118A (en) 1997-11-11
EP0778623B1 (de) 2001-07-18

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