ATE208537T1 - Schottky-gleichrichter mit mos-gräben - Google Patents

Schottky-gleichrichter mit mos-gräben

Info

Publication number
ATE208537T1
ATE208537T1 AT94922051T AT94922051T ATE208537T1 AT E208537 T1 ATE208537 T1 AT E208537T1 AT 94922051 T AT94922051 T AT 94922051T AT 94922051 T AT94922051 T AT 94922051T AT E208537 T1 ATE208537 T1 AT E208537T1
Authority
AT
Austria
Prior art keywords
mesa
face
conductivity type
anode electrode
insulating regions
Prior art date
Application number
AT94922051T
Other languages
English (en)
Inventor
Manjo Mehrotra
Bantval Jayant Baliga
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE208537T1 publication Critical patent/ATE208537T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
AT94922051T 1993-07-06 1994-06-29 Schottky-gleichrichter mit mos-gräben ATE208537T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/088,204 US5365102A (en) 1993-07-06 1993-07-06 Schottky barrier rectifier with MOS trench
PCT/US1994/007348 WO1995002258A1 (en) 1993-07-06 1994-06-29 Schottky barrier rectifier with mos trench

Publications (1)

Publication Number Publication Date
ATE208537T1 true ATE208537T1 (de) 2001-11-15

Family

ID=22209988

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94922051T ATE208537T1 (de) 1993-07-06 1994-06-29 Schottky-gleichrichter mit mos-gräben

Country Status (7)

Country Link
US (1) US5365102A (de)
EP (1) EP0707744B1 (de)
JP (1) JP2911605B2 (de)
AT (1) ATE208537T1 (de)
AU (1) AU7252994A (de)
DE (1) DE69428996T2 (de)
WO (1) WO1995002258A1 (de)

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686753A (en) * 1994-11-11 1997-11-11 Murata Manufacturing Co., Ltd. Schottky barrier diode having a mesa structure
JPH08139341A (ja) * 1994-11-11 1996-05-31 Murata Mfg Co Ltd ショットキ−バリアダイオ−ド
US6078090A (en) * 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
JPH0964381A (ja) * 1995-08-25 1997-03-07 Murata Mfg Co Ltd ショットキーバリアダイオード
US5612567A (en) * 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
JP2001508946A (ja) * 1997-01-20 2001-07-03 エービービー リサーチ リミテッド ＳｉＣを使用したショットキー・ダイオードとその製造方法
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
FR2764117B1 (fr) * 1997-05-30 1999-08-13 Sgs Thomson Microelectronics Contact sur une region de type p
JP3618517B2 (ja) * 1997-06-18 2005-02-09 三菱電機株式会社 半導体装置およびその製造方法
DE19800647C1 (de) * 1998-01-09 1999-05-27 Siemens Ag SOI-Hochspannungsschalter
DE19819590C1 (de) * 1998-04-30 1999-06-24 Siemens Ag MOS-Leistungstransistor
JP3498580B2 (ja) * 1998-07-27 2004-02-16 日産自動車株式会社 単極性整流素子
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6855983B1 (en) * 1998-11-10 2005-02-15 Toyota Jidosha Kabushiki Kaisha Semiconductor device having reduced on resistance
JP3494063B2 (ja) * 1999-02-24 2004-02-03 トヨタ自動車株式会社 半導体装置
US6204073B1 (en) * 1998-12-09 2001-03-20 Texas Instruments Incorporated Shallow trench isolation with conductive hard mask for in-line moat/trench width electrical measurements
US6351018B1 (en) 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
US6191447B1 (en) 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
US6768177B1 (en) * 1999-08-30 2004-07-27 Institute Of Biophysics, Chinese Academy Of Sciences Parallel plate diode
US6368514B1 (en) 1999-09-01 2002-04-09 Luminous Intent, Inc. Method and apparatus for batch processed capacitors using masking techniques
JP2001077379A (ja) * 1999-09-03 2001-03-23 Nippon Inter Electronics Corp ショットキーバリア半導体装置
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US7186609B2 (en) 1999-12-30 2007-03-06 Siliconix Incorporated Method of fabricating trench junction barrier rectifier
GB0002235D0 (en) * 2000-02-02 2000-03-22 Koninkl Philips Electronics Nv Trenched schottky rectifiers
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6707127B1 (en) * 2000-08-31 2004-03-16 General Semiconductor, Inc. Trench schottky rectifier
US6593620B1 (en) 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6420768B1 (en) 2000-12-15 2002-07-16 General Semiconductor, Inc. Trench schottky barrier rectifier and method of making the same
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6498108B2 (en) 2001-02-12 2002-12-24 Fairchild Semiconductor Corporation Method for removing surface contamination on semiconductor substrates
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US6580141B2 (en) 2001-06-01 2003-06-17 General Semiconductor, Inc. Trench schottky rectifier
US6683363B2 (en) * 2001-07-03 2004-01-27 Fairchild Semiconductor Corporation Trench structure for semiconductor devices
GB0120595D0 (en) * 2001-08-24 2001-10-17 Koninkl Philips Electronics Nv A semiconductor rectifier
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US6642738B2 (en) 2001-10-23 2003-11-04 Fairchild Semiconductor Corporation Method and apparatus for field-effect transistor current sensing using the voltage drop across drain to source resistance that eliminates dependencies on temperature of the field-effect transistor and/or statistical distribution of the initial value of drain to source resistance
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
GB0214618D0 (en) * 2002-06-25 2002-08-07 Koninkl Philips Electronics Nv Semiconductor device with edge structure
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US6855593B2 (en) * 2002-07-11 2005-02-15 International Rectifier Corporation Trench Schottky barrier diode
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6998694B2 (en) * 2003-08-05 2006-02-14 Shye-Lin Wu High switching speed two mask Schottky diode with high field breakdown
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7183610B2 (en) 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
US7683433B2 (en) * 2004-07-07 2010-03-23 Semi Solution, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US8247840B2 (en) * 2004-07-07 2012-08-21 Semi Solutions, Llc Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
US7375402B2 (en) * 2004-07-07 2008-05-20 Semi Solutions, Llc Method and apparatus for increasing stability of MOS memory cells
US7224205B2 (en) * 2004-07-07 2007-05-29 Semi Solutions, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
DE102004053760A1 (de) * 2004-11-08 2006-05-11 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
DE102004056663A1 (de) 2004-11-24 2006-06-01 Robert Bosch Gmbh Halbleitereinrichtung und Gleichrichteranordnung
US7651905B2 (en) * 2005-01-12 2010-01-26 Semi Solutions, Llc Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
DE112006000832B4 (de) 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
JP2006295062A (ja) * 2005-04-14 2006-10-26 Rohm Co Ltd 半導体装置
DE112006001516T5 (de) 2005-06-10 2008-04-17 Fairchild Semiconductor Corp. Feldeffekttransistor mit Ladungsgleichgewicht
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US8039328B2 (en) * 2005-10-18 2011-10-18 International Rectifier Corporation Trench Schottky device with single barrier
US7488673B2 (en) * 2006-02-24 2009-02-10 International Rectifier Corporation Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7863689B2 (en) * 2006-09-19 2011-01-04 Semi Solutions, Llc. Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor
US7777257B2 (en) * 2007-02-14 2010-08-17 Freescale Semiconductor, Inc. Bipolar Schottky diode and method
US8138033B2 (en) * 2007-05-09 2012-03-20 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
JP2010541212A (ja) 2007-09-21 2010-12-24 フェアチャイルド・セミコンダクター・コーポレーション 電力デバイスのための超接合構造及び製造方法
DE102007045185A1 (de) 2007-09-21 2009-04-02 Robert Bosch Gmbh Halbleitervorrichtung und Verfahren zu deren Herstellung
US7741693B1 (en) 2007-11-16 2010-06-22 National Semiconductor Corporation Method for integrating trench MOS Schottky barrier devices into integrated circuits and related semiconductor devices
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US7745846B2 (en) * 2008-01-15 2010-06-29 Ciclon Semiconductor Device Corp. LDMOS integrated Schottky diode
TWI376752B (en) * 2008-04-22 2012-11-11 Pfc Device Co Mos pn junction schottky diode and method for manufacturing the same
TWI381455B (zh) 2008-04-22 2013-01-01 Pfc Device Co 金氧半ｐ－ｎ接面二極體結構及其製作方法
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
IT1394649B1 (it) * 2009-06-01 2012-07-05 St Microelectronics Srl Fotodiodo con contatto schottky sulle pareti di trincee parallele e relativo metodo di fabbricazione
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
TWI469221B (zh) * 2009-06-26 2015-01-11 Pfc Device Co 溝渠式蕭基二極體及其製作方法
DE102009028246A1 (de) * 2009-08-05 2011-02-10 Robert Bosch Gmbh Gleichrichteranordnung
DE102009028248A1 (de) 2009-08-05 2011-02-10 Robert Bosch Gmbh Halbleiteranordnung
DE102009046606A1 (de) 2009-11-11 2011-05-12 Robert Bosch Gmbh Schutzelement für elektronische Schaltungen
US20110121387A1 (en) * 2009-11-23 2011-05-26 Francois Hebert Integrated guarded schottky diode compatible with trench-gate dmos, structure and method
US20110156810A1 (en) * 2009-12-30 2011-06-30 Intersil Americas Inc. Integrated dmos and schottky
US8492225B2 (en) * 2009-12-30 2013-07-23 Intersil Americas Inc. Integrated trench guarded schottky diode compatible with powerdie, structure and method
US20110156682A1 (en) * 2009-12-30 2011-06-30 Dev Alok Girdhar Voltage converter with integrated schottky device and systems including same
US8896084B2 (en) 2010-02-23 2014-11-25 Yoshitaka Sugawara Semiconductor device
DE102010003166A1 (de) 2010-03-23 2011-09-29 Robert Bosch Gmbh Vorrichtung zur Stromerzeugung mit Solarzellen
DE102010028783A1 (de) 2010-05-10 2011-11-10 Robert Bosch Gmbh Gleichrichter-Brückenschaltung
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN101901807B (zh) * 2010-06-23 2011-11-09 苏州硅能半导体科技股份有限公司 沟槽式肖特基势垒二极管整流器件及制造方法
CN101901808B (zh) * 2010-06-23 2011-11-09 苏州硅能半导体科技股份有限公司 一种沟槽式肖特基势垒二极管整流器件及制造方法
JP2012023199A (ja) 2010-07-14 2012-02-02 Rohm Co Ltd ショットキバリアダイオード
CN101916723B (zh) * 2010-07-23 2015-01-07 上海华虹宏力半导体制造有限公司 一种肖特基二极管的制备方法
DE102010038879A1 (de) 2010-08-04 2012-02-09 Robert Bosch Gmbh Gleichrichteranordnung, welche Einpressdioden aufweist
JP5810522B2 (ja) * 2010-12-14 2015-11-11 日産自動車株式会社 異種材料接合型ダイオード及びその製造方法
TWI497602B (zh) * 2011-02-15 2015-08-21 Tzu Hsiung Chen 溝渠式蕭基二極體及其製作方法
TWI422043B (zh) 2011-04-15 2014-01-01 節能元件股份有限公司 直立式金氧半整流二極體及其製作方法
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8502336B2 (en) 2011-05-17 2013-08-06 Semiconductor Components Industries, Llc Semiconductor diode and method of manufacture
US9331065B2 (en) 2011-05-17 2016-05-03 Semiconductor Components Industries, Llc Semiconductor diode and method of manufacture
CN102789977B (zh) * 2011-05-20 2014-12-31 英属维京群岛商节能元件股份有限公司 直立式金属氧化物半导体整流二极管及其制作方法
JP5865016B2 (ja) * 2011-10-31 2016-02-17 株式会社 日立パワーデバイス トレンチ型ショットキー接合型半導体装置及びその製造方法
TWI503891B (zh) 2011-12-06 2015-10-11 陳自雄 溝渠式蕭基二極體及其製作方法
US8680590B2 (en) 2012-03-02 2014-03-25 Pfc Device Corp. Multi-trench termination structure for semiconductor device
US8928116B2 (en) 2012-07-31 2015-01-06 Silanna Semiconductor U.S.A., Inc. Power device integration on a common substrate
KR101585537B1 (ko) 2012-07-31 2016-01-14 실라나 아시아 피티이 리미티드 공통 기판 상의 파워 소자 집적
US8994105B2 (en) 2012-07-31 2015-03-31 Azure Silicon LLC Power device integration on a common substrate
US8674440B2 (en) 2012-07-31 2014-03-18 Io Semiconductor Inc. Power device integration on a common substrate
US10290702B2 (en) 2012-07-31 2019-05-14 Silanna Asia Pte Ltd Power device on bulk substrate
US8847310B1 (en) 2012-07-31 2014-09-30 Azure Silicon LLC Power device integration on a common substrate
US9412881B2 (en) 2012-07-31 2016-08-09 Silanna Asia Pte Ltd Power device integration on a common substrate
TWI521693B (zh) 2012-11-27 2016-02-11 財團法人工業技術研究院 蕭基能障二極體及其製造方法
TWI469341B (zh) * 2012-12-20 2015-01-11 Ind Tech Res Inst 碳化矽溝槽式蕭基能障元件
CN103022137A (zh) * 2012-12-27 2013-04-03 淄博美林电子有限公司 一种高效率肖特基芯片
US9331197B2 (en) 2013-08-08 2016-05-03 Cree, Inc. Vertical power transistor device
CN103441152A (zh) * 2013-08-28 2013-12-11 中国科学院半导体研究所 沟槽型mos势垒肖特基二极管及制作方法
US10868169B2 (en) 2013-09-20 2020-12-15 Cree, Inc. Monolithically integrated vertical power transistor and bypass diode
US9318597B2 (en) 2013-09-20 2016-04-19 Cree, Inc. Layout configurations for integrating schottky contacts into a power transistor device
US10600903B2 (en) 2013-09-20 2020-03-24 Cree, Inc. Semiconductor device including a power transistor device and bypass diode
US20150084063A1 (en) * 2013-09-20 2015-03-26 Cree, Inc. Semiconductor device with a current spreading layer
US9716151B2 (en) 2013-09-24 2017-07-25 Semiconductor Components Industries, Llc Schottky device having conductive trenches and a multi-concentration doping profile therebetween
EP2858117A1 (de) 2013-10-02 2015-04-08 Nxp B.V. Halbleitervorrichtung und Herstellungsverfahren
US9224854B2 (en) * 2013-10-03 2015-12-29 Texas Instruments Incorporated Trench gate trench field plate vertical MOSFET
US9123802B2 (en) * 2013-10-03 2015-09-01 Texas Instruments Incorporated Vertical trench MOSFET device in integrated power technologies
US9136368B2 (en) * 2013-10-03 2015-09-15 Texas Instruments Incorporated Trench gate trench field plate semi-vertical semi-lateral MOSFET
US9419116B2 (en) 2014-01-22 2016-08-16 Alexei Ankoudinov Diodes and methods of manufacturing diodes
US9252293B2 (en) 2014-01-22 2016-02-02 Alexei Ankoudinov Trench field effect diodes and methods of manufacturing those diodes
US9263598B2 (en) 2014-02-14 2016-02-16 Semiconductor Components Industries, Llc Schottky device and method of manufacture
CN104393056B (zh) * 2014-11-10 2017-02-15 电子科技大学 一种积累型二极管
CN104409519A (zh) * 2014-11-10 2015-03-11 电子科技大学 一种具有浮岛结构的二极管
EP3032586A1 (de) 2014-12-10 2016-06-15 Nxp B.V. Halbleiteranordnung mit Graben und Verfahren zu deren Herstellung
US9716187B2 (en) 2015-03-06 2017-07-25 Semiconductor Components Industries, Llc Trench semiconductor device having multiple trench depths and method
US10431699B2 (en) 2015-03-06 2019-10-01 Semiconductor Components Industries, Llc Trench semiconductor device having multiple active trench depths and method
DE102015106688B4 (de) * 2015-04-29 2020-03-12 Infineon Technologies Ag Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten
JP2016096351A (ja) * 2015-12-17 2016-05-26 ローム株式会社 ショットキバリアダイオード
US10083897B2 (en) 2017-02-20 2018-09-25 Silanna Asia Pte Ltd Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
US9923059B1 (en) 2017-02-20 2018-03-20 Silanna Asia Pte Ltd Connection arrangements for integrated lateral diffusion field effect transistors
JP7291331B2 (ja) * 2017-02-27 2023-06-15 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7116409B2 (ja) * 2017-02-27 2022-08-10 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7179276B2 (ja) * 2017-09-29 2022-11-29 株式会社タムラ製作所 電界効果トランジスタ
US10818788B2 (en) 2017-12-15 2020-10-27 Alpha And Omega Semiconductor (Cayman) Ltd. Schottky diode integrated into superjunction power MOSFETs
US10388801B1 (en) * 2018-01-30 2019-08-20 Semiconductor Components Industries, Llc Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
US10608122B2 (en) 2018-03-13 2020-03-31 Semicondutor Components Industries, Llc Schottky device and method of manufacture
CN110504326B (zh) * 2018-05-17 2022-10-14 联华电子股份有限公司 萧特基二极管
US10566466B2 (en) 2018-06-27 2020-02-18 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US10439075B1 (en) 2018-06-27 2019-10-08 Semiconductor Components Industries, Llc Termination structure for insulated gate semiconductor device and method
US11532758B2 (en) 2019-09-24 2022-12-20 Texas Instruments Incorporated Low leakage Schottky diode
CN112909076B (zh) * 2021-02-07 2022-07-12 河北工业大学 一种具有p型氧化镍材料的混合式肖特基势垒二极管结构
JP7468432B2 (ja) * 2021-03-30 2024-04-16 トヨタ自動車株式会社 半導体装置
CN114566551A (zh) * 2022-02-21 2022-05-31 先之科半导体科技(东莞)有限公司 一种宽沟槽大功率肖特基二极管及其制备方法
CN116169182A (zh) * 2023-01-04 2023-05-26 董子玉 电源件、电源件加工系统及电源件加工方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232677A (en) * 1975-09-09 1977-03-12 Nec Corp Schottky barrier diode
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
US5040034A (en) * 1989-01-18 1991-08-13 Nissan Motor Co., Ltd. Semiconductor device
US4982260A (en) * 1989-10-02 1991-01-01 General Electric Company Power rectifier with trenches
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor

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EP0707744B1 (de) 2001-11-07
US5365102A (en) 1994-11-15
JPH08512430A (ja) 1996-12-24
DE69428996T2 (de) 2002-06-20
JP2911605B2 (ja) 1999-06-23
AU7252994A (en) 1995-02-06
DE69428996D1 (de) 2001-12-13
EP0707744A1 (de) 1996-04-24
WO1995002258A1 (en) 1995-01-19

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