ATE211295T1 - Speicherzelle - Google Patents

Speicherzelle

Info

Publication number
ATE211295T1
ATE211295T1 AT96300716T AT96300716T ATE211295T1 AT E211295 T1 ATE211295 T1 AT E211295T1 AT 96300716 T AT96300716 T AT 96300716T AT 96300716 T AT96300716 T AT 96300716T AT E211295 T1 ATE211295 T1 AT E211295T1
Authority
AT
Austria
Prior art keywords
conducting layers
memory cell
conducting
layers
application means
Prior art date
Application number
AT96300716T
Other languages
English (en)
Inventor
Yasunao Katayama
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE211295T1 publication Critical patent/ATE211295T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/853—Complementary IGFETs, e.g. CMOS comprising FinFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
AT96300716T 1995-02-22 1996-02-01 Speicherzelle ATE211295T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7033998A JP2986057B2 (ja) 1995-02-22 1995-02-22 メモリセル

Publications (1)

Publication Number Publication Date
ATE211295T1 true ATE211295T1 (de) 2002-01-15

Family

ID=12402137

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96300716T ATE211295T1 (de) 1995-02-22 1996-02-01 Speicherzelle

Country Status (8)

Country Link
US (1) US5625589A (de)
EP (1) EP0729156B1 (de)
JP (1) JP2986057B2 (de)
KR (1) KR0184629B1 (de)
AT (1) ATE211295T1 (de)
DE (1) DE69618044T2 (de)
ES (1) ES2167515T3 (de)
TW (1) TW270995B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0797182A1 (de) * 1996-03-19 1997-09-24 Hitachi, Ltd. Flüssigkristallanzeige mit aktiver Matrix und mit Datenhalteschaltung in jedem Pixel
US7534710B2 (en) * 2005-12-22 2009-05-19 International Business Machines Corporation Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0225698B1 (de) * 1985-10-12 1990-08-01 Fujitsu Limited Logische Schaltung
JP2588590B2 (ja) * 1988-07-20 1997-03-05 富士通株式会社 半導体記憶装置
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
JPH05190922A (ja) * 1992-01-09 1993-07-30 Hitachi Ltd 量子メモリ装置
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5390145A (en) * 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory

Also Published As

Publication number Publication date
DE69618044T2 (de) 2002-08-29
TW270995B (en) 1996-02-21
JPH08250672A (ja) 1996-09-27
EP0729156A2 (de) 1996-08-28
ES2167515T3 (es) 2002-05-16
DE69618044D1 (de) 2002-01-31
EP0729156A3 (de) 1999-07-28
US5625589A (en) 1997-04-29
KR960032764A (ko) 1996-09-17
KR0184629B1 (ko) 1999-03-20
JP2986057B2 (ja) 1999-12-06
EP0729156B1 (de) 2001-12-19

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties