ATE211306T1 - Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode - Google Patents

Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode

Info

Publication number
ATE211306T1
ATE211306T1 AT89202351T AT89202351T ATE211306T1 AT E211306 T1 ATE211306 T1 AT E211306T1 AT 89202351 T AT89202351 T AT 89202351T AT 89202351 T AT89202351 T AT 89202351T AT E211306 T1 ATE211306 T1 AT E211306T1
Authority
AT
Austria
Prior art keywords
anode
layer
conductivity type
bipolar transistor
control electrode
Prior art date
Application number
AT89202351T
Other languages
English (en)
Inventor
Satyetdranath Mukherjee
Paul Gin-Yea Tsui
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE211306T1 publication Critical patent/ATE211306T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs

Landscapes

  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
AT89202351T 1988-09-22 1989-09-18 Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode ATE211306T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24902888A 1988-09-22 1988-09-22
US33698289A 1989-04-12 1989-04-12

Publications (1)

Publication Number Publication Date
ATE211306T1 true ATE211306T1 (de) 2002-01-15

Family

ID=26939765

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89202351T ATE211306T1 (de) 1988-09-22 1989-09-18 Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode

Country Status (5)

Country Link
EP (1) EP0361589B1 (de)
JP (1) JPH079990B2 (de)
KR (1) KR0147846B1 (de)
AT (1) ATE211306T1 (de)
DE (1) DE68929359T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5227653A (en) * 1991-08-07 1993-07-13 North American Philips Corp. Lateral trench-gate bipolar transistors
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
JPH10501103A (ja) * 1995-03-23 1998-01-27 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Ｌｉｇｂｔ素子が形成されている半導体装置
JP3824310B2 (ja) * 2002-01-18 2006-09-20 ローム株式会社 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL73328A (en) * 1984-10-26 1990-02-09 Tzora Furniture Ind Ltd Rotatable joint with coaxially assembled parts
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
DE3777576D1 (de) * 1986-12-22 1992-04-23 Philips Nv Komplementaere, laterale silizium-auf-isolatorgleichrichter mit isoliertem gate.
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
EP0361589A1 (de) 1990-04-04
KR0147846B1 (ko) 1998-08-01
DE68929359D1 (de) 2002-01-31
EP0361589B1 (de) 2001-12-19
KR900005596A (ko) 1990-04-14
DE68929359T2 (de) 2002-08-22
JPH02139971A (ja) 1990-05-29
JPH079990B2 (ja) 1995-02-01

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