ATE231197T1 - Herstellung von einkristallen aus aluminiumnitrid,siliziumkarbid und aluminiumnitrid-siliziumkarbid legierung - Google Patents

Herstellung von einkristallen aus aluminiumnitrid,siliziumkarbid und aluminiumnitrid-siliziumkarbid legierung

Info

Publication number
ATE231197T1
ATE231197T1 AT99961511T AT99961511T ATE231197T1 AT E231197 T1 ATE231197 T1 AT E231197T1 AT 99961511 T AT99961511 T AT 99961511T AT 99961511 T AT99961511 T AT 99961511T AT E231197 T1 ATE231197 T1 AT E231197T1
Authority
AT
Austria
Prior art keywords
silicon carbide
aluminum nitride
single crystals
sic
production
Prior art date
Application number
AT99961511T
Other languages
English (en)
Inventor
Charles Eric Hunter
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE231197T1 publication Critical patent/ATE231197T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
AT99961511T 1998-10-09 1999-10-08 Herstellung von einkristallen aus aluminiumnitrid,siliziumkarbid und aluminiumnitrid-siliziumkarbid legierung ATE231197T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/169,401 US6063185A (en) 1998-10-09 1998-10-09 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
PCT/US1999/023487 WO2000022203A2 (en) 1998-10-09 1999-10-08 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy

Publications (1)

Publication Number Publication Date
ATE231197T1 true ATE231197T1 (de) 2003-02-15

Family

ID=22615524

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99961511T ATE231197T1 (de) 1998-10-09 1999-10-08 Herstellung von einkristallen aus aluminiumnitrid,siliziumkarbid und aluminiumnitrid-siliziumkarbid legierung

Country Status (12)

Country Link
US (1) US6063185A (de)
EP (1) EP1144737B1 (de)
JP (1) JP4530542B2 (de)
KR (1) KR100651149B1 (de)
CN (1) CN1174126C (de)
AT (1) ATE231197T1 (de)
AU (1) AU1807000A (de)
CA (1) CA2344342C (de)
DE (1) DE69904965T2 (de)
ES (1) ES2191479T3 (de)
MY (1) MY121858A (de)
WO (1) WO2000022203A2 (de)

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US20070110657A1 (en) * 2005-11-14 2007-05-17 Hunter Charles E Unseeded silicon carbide single crystals
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US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
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Also Published As

Publication number Publication date
CA2344342C (en) 2009-05-12
EP1144737A3 (de) 2002-09-11
MY121858A (en) 2006-02-28
US6063185A (en) 2000-05-16
KR20010079970A (ko) 2001-08-22
ES2191479T3 (es) 2003-09-01
CN1174126C (zh) 2004-11-03
CN1344336A (zh) 2002-04-10
DE69904965T2 (de) 2003-11-13
CA2344342A1 (en) 2000-04-20
JP2002527342A (ja) 2002-08-27
EP1144737A2 (de) 2001-10-17
WO2000022203A3 (en) 2001-09-27
JP4530542B2 (ja) 2010-08-25
WO2000022203A2 (en) 2000-04-20
EP1144737B1 (de) 2003-01-15
DE69904965D1 (de) 2003-02-20
KR100651149B1 (ko) 2006-11-28
AU1807000A (en) 2000-05-01

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