ATE240588T1 - Siliziumkarbid feldgesteuerter zweipoliger schalter - Google Patents

Siliziumkarbid feldgesteuerter zweipoliger schalter

Info

Publication number
ATE240588T1
ATE240588T1 AT98911876T AT98911876T ATE240588T1 AT E240588 T1 ATE240588 T1 AT E240588T1 AT 98911876 T AT98911876 T AT 98911876T AT 98911876 T AT98911876 T AT 98911876T AT E240588 T1 ATE240588 T1 AT E240588T1
Authority
AT
Austria
Prior art keywords
epitaxial layer
silicon carbide
conductivity type
type silicon
ohmic
Prior art date
Application number
AT98911876T
Other languages
English (en)
Inventor
Ranbir Singh
John W Palmour
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE240588T1 publication Critical patent/ATE240588T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Contacts (AREA)
  • Push-Button Switches (AREA)
  • Keying Circuit Devices (AREA)
AT98911876T 1997-04-30 1998-03-20 Siliziumkarbid feldgesteuerter zweipoliger schalter ATE240588T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/846,286 US6011279A (en) 1997-04-30 1997-04-30 Silicon carbide field controlled bipolar switch
PCT/US1998/005487 WO1998049731A1 (en) 1997-04-30 1998-03-20 Silicon carbide field conrolled bipolar switch

Publications (1)

Publication Number Publication Date
ATE240588T1 true ATE240588T1 (de) 2003-05-15

Family

ID=25297449

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98911876T ATE240588T1 (de) 1997-04-30 1998-03-20 Siliziumkarbid feldgesteuerter zweipoliger schalter

Country Status (10)

Country Link
US (1) US6011279A (de)
EP (1) EP0979531B1 (de)
JP (1) JP4680330B2 (de)
KR (1) KR100514398B1 (de)
CN (1) CN1166001C (de)
AT (1) ATE240588T1 (de)
AU (1) AU6572898A (de)
CA (1) CA2285067C (de)
DE (1) DE69814619T2 (de)
WO (1) WO1998049731A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1014455B1 (de) 1997-07-25 2006-07-12 Nichia Corporation Halbleitervorrichtung aus einer nitridverbindung
DE19833214C1 (de) * 1998-07-23 1999-08-12 Siemens Ag J-FET-Halbleiteranordnung
US6884644B1 (en) 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (en) 1999-03-04 2000-09-08 Nichia Corporation Nitride semiconductor laser element
SE9901410D0 (sv) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US6909119B2 (en) * 2001-03-15 2005-06-21 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6514779B1 (en) * 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
CN100433256C (zh) * 2004-03-18 2008-11-12 克里公司 减少堆垛层错成核位置的顺序光刻方法和具有减少的堆垛层错成核位置的结构
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
DE102004047313B3 (de) * 2004-09-29 2006-03-30 Siced Electronics Development Gmbh & Co. Kg Halbleiteranordnung mit einem Tunnelkontakt und Verfahren zu deren Herstellung
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP2011199306A (ja) * 2011-06-03 2011-10-06 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
CN104201211B (zh) * 2014-08-27 2016-03-30 温州大学 制备SiC超快恢复二极管及工艺
SE541290C2 (en) * 2017-09-15 2019-06-11 Ascatron Ab A method for manufacturing a grid
CN113097298B (zh) * 2021-03-30 2024-09-17 全球能源互联网研究院有限公司 一种绝缘栅双极型晶体管及其制备方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171995A (en) * 1975-10-20 1979-10-23 Semiconductor Research Foundation Epitaxial deposition process for producing an electrostatic induction type thyristor
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
JPS53127272A (en) * 1977-04-13 1978-11-07 Semiconductor Res Found Electrostatic induction transistor
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
JPS55105342A (en) * 1979-02-06 1980-08-12 Seiko Instr & Electronics Ltd Semiconductor integrated circuit
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
US4466173A (en) * 1981-11-23 1984-08-21 General Electric Company Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques
JP2587722B2 (ja) * 1984-08-08 1997-03-05 新技術事業団 トンネル注入型静電誘導トランジスタ
JPH0652793B2 (ja) * 1984-10-29 1994-07-06 新技術事業団 静電誘導トランジスタの製造方法
JPS63185055A (ja) * 1987-01-28 1988-07-30 Hitachi Ltd 半導体基板を有する回路素子
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
JP2888877B2 (ja) * 1989-05-17 1999-05-10 株式会社東芝 半導体記憶装置
US4994883A (en) * 1989-10-02 1991-02-19 General Electric Company Field controlled diode (FCD) having MOS trench gates
US5202750A (en) * 1990-04-09 1993-04-13 U.S. Philips Corp. MOS-gated thyristor
EP0619921A1 (de) * 1991-12-23 1994-10-19 Forschungszentrum Jülich Gmbh Elektronisches bauelement und verfahren zu dessen herstellung
JP2777994B2 (ja) * 1993-03-02 1998-07-23 東洋電機製造株式会社 分布型主電極構造を有する静電誘導型半導体素子
JPH06260631A (ja) * 1993-03-03 1994-09-16 Matsushita Electric Works Ltd 半導体装置
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5554561A (en) * 1993-04-30 1996-09-10 Texas Instruments Incorporated Epitaxial overgrowth method
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
JPH0730111A (ja) * 1993-07-15 1995-01-31 Hitachi Ltd 絶縁ゲート形電界効果トランジスタ
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
DE9411601U1 (de) * 1993-09-08 1994-10-13 Siemens AG, 80333 München Strombegrenzender Schalter
AU4942993A (en) * 1993-09-08 1995-03-27 Siemens Aktiengesellschaft Current limiting device
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5387805A (en) * 1994-01-05 1995-02-07 Metzler; Richard A. Field controlled thyristor
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
WO1995034915A1 (en) * 1994-06-13 1995-12-21 Abb Research Ltd. Semiconductor device in silicon carbide
JP3277075B2 (ja) * 1994-09-07 2002-04-22 日本碍子株式会社 半導体装置およびその製造方法
JPH08130312A (ja) * 1994-09-08 1996-05-21 Fuji Electric Co Ltd 横型半導体装置およびその使用方法
JPH08153868A (ja) * 1994-11-29 1996-06-11 Yazaki Corp 半導体装置
JPH08321625A (ja) * 1995-05-26 1996-12-03 Matsushita Electric Works Ltd 静電誘導型半導体装置の製造方法
JP3369793B2 (ja) * 1995-05-26 2003-01-20 日本碍子株式会社 逆導通半導体装置
JP2795220B2 (ja) * 1995-06-09 1998-09-10 日本電気株式会社 電界効果トランジスタ
SE9601176D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd A method for producing a semiconductor device having semiconductor layers of SiC by the use of an implanting step and a device produced thereby
DE19644821C1 (de) * 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften

Also Published As

Publication number Publication date
KR20010006559A (ko) 2001-01-26
WO1998049731A1 (en) 1998-11-05
CA2285067C (en) 2006-05-02
JP4680330B2 (ja) 2011-05-11
JP2001522533A (ja) 2001-11-13
EP0979531A1 (de) 2000-02-16
AU6572898A (en) 1998-11-24
DE69814619D1 (de) 2003-06-18
CN1254442A (zh) 2000-05-24
US6011279A (en) 2000-01-04
CN1166001C (zh) 2004-09-08
CA2285067A1 (en) 1998-11-05
KR100514398B1 (ko) 2005-09-13
EP0979531B1 (de) 2003-05-14
DE69814619T2 (de) 2004-03-18

Similar Documents

Publication Publication Date Title
ATE240588T1 (de) Siliziumkarbid feldgesteuerter zweipoliger schalter
AU3234597A (en) Silicon carbide metal-insulator semiconductor field effect transistor
US4495513A (en) Bipolar transistor controlled by field effect by means of an isolated gate
SE9700141D0 (sv) A schottky diode of SiC and a method for production thereof
SE9802909D0 (sv) A Method för producing a pn-junction for a semiconductor device of SIC as well as a semiconductor device of SIC having a pn-junction
JP2001527296A5 (de)
FR2738394B1 (fr) Dispositif a semi-conducteur en carbure de silicium, et son procede de fabrication
CA2336933A1 (en) Silicon carbide horizontal channel buffered gate semiconductor devices
US6552363B2 (en) Polysilicon FET built on silicon carbide diode substrate
KR970024265A (ko) 반도체 장치
WO2002035611A3 (en) Unipolar spin diode and transistor and the applications of the same
ATE452426T1 (de) Leistungshalbleiteranordnung mit halbisolierendem substrat
KR890011026A (ko) 반도체 소자 제조방법
SE9600199D0 (sv) A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
TW343385B (en) Power transistor
WO2001069685A3 (en) Trench-gate semiconductor devices
KR970054357A (ko) 반도체장치 및 그 제조방법
JP2000269354A5 (de)
JPH02237162A (ja) 絶縁ゲートバイポーラトランジスタ
KR860008625A (ko) 절연게이트 반도체 장치
JP2768362B2 (ja) Ｍｏｓ型半導体装置
WO1991017570A1 (en) Insulated gate bipolar transistor
GB1517251A (en) Semiconductor devices
EP1267417A3 (de) Halbleiteranordnungen mit Schichten aus Verbundmaterial der III-V Gruppe
TW200501435A (en) Semiconductor component and method of manufacturing same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties