ATE256916T1 - Planarisierungsverfahren für halbleitende substrate - Google Patents

Planarisierungsverfahren für halbleitende substrate

Info

Publication number
ATE256916T1
ATE256916T1 AT98924839T AT98924839T ATE256916T1 AT E256916 T1 ATE256916 T1 AT E256916T1 AT 98924839 T AT98924839 T AT 98924839T AT 98924839 T AT98924839 T AT 98924839T AT E256916 T1 ATE256916 T1 AT E256916T1
Authority
AT
Austria
Prior art keywords
planarization process
chemical mechanical
semiconducting substrates
mechanical planarization
semiconductor devices
Prior art date
Application number
AT98924839T
Other languages
English (en)
Inventor
Trung T Doan
Guy T Blalock
Mark Durcan
Scott G Meikle
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE256916T1 publication Critical patent/ATE256916T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
AT98924839T 1997-05-23 1998-05-21 Planarisierungsverfahren für halbleitende substrate ATE256916T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/862,752 US6331488B1 (en) 1997-05-23 1997-05-23 Planarization process for semiconductor substrates
PCT/US1998/010479 WO1998053487A1 (en) 1997-05-23 1998-05-21 Planarization process for semiconductor substrates

Publications (1)

Publication Number Publication Date
ATE256916T1 true ATE256916T1 (de) 2004-01-15

Family

ID=25339249

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98924839T ATE256916T1 (de) 1997-05-23 1998-05-21 Planarisierungsverfahren für halbleitende substrate

Country Status (8)

Country Link
US (4) US6331488B1 (de)
EP (1) EP1021824B1 (de)
JP (1) JP2001527699A (de)
KR (1) KR100413139B1 (de)
AT (1) ATE256916T1 (de)
DE (1) DE69820662T2 (de)
TW (1) TW519702B (de)
WO (1) WO1998053487A1 (de)

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US6612901B1 (en) 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6520834B1 (en) 2000-08-09 2003-02-18 Micron Technology, Inc. Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
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US6623329B1 (en) 2000-08-31 2003-09-23 Micron Technology, Inc. Method and apparatus for supporting a microelectronic substrate relative to a planarization pad
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US7438626B2 (en) 2005-08-31 2008-10-21 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US7775785B2 (en) * 2006-12-20 2010-08-17 Brewer Science Inc. Contact planarization apparatus
US7754612B2 (en) 2007-03-14 2010-07-13 Micron Technology, Inc. Methods and apparatuses for removing polysilicon from semiconductor workpieces
US20120064720A1 (en) * 2010-09-10 2012-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Planarization control for semiconductor devices
US8802569B2 (en) * 2012-03-13 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device
JP2014053502A (ja) * 2012-09-07 2014-03-20 Toshiba Corp 半導体装置の製造方法
CN104124179B (zh) * 2013-04-26 2017-08-29 上海和辉光电有限公司 显示器件的封装工艺及装置
JP2013212581A (ja) * 2013-07-24 2013-10-17 Nikon Corp 研磨方法
KR102535126B1 (ko) * 2020-10-15 2023-05-22 (주)휴넷플러스 유체 가압을 이용한 반도체 집적소자의 평탄화 방법
CN113725079A (zh) * 2021-08-11 2021-11-30 长江存储科技有限责任公司 基体的表面处理方法、预处理衬底以及存储器的制作方法
CN115863148B (zh) * 2022-12-08 2026-04-03 西安奕斯伟材料科技股份有限公司 用于改善硅片表面平坦度的方法及系统
CN115863163A (zh) * 2022-12-08 2023-03-28 中国科学院微电子研究所 半导体器件的平坦化方法、电子设备和芯片

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Also Published As

Publication number Publication date
EP1021824A1 (de) 2000-07-26
US20010051430A1 (en) 2001-12-13
US20060249723A1 (en) 2006-11-09
WO1998053487A1 (en) 1998-11-26
EP1021824B1 (de) 2003-12-17
JP2001527699A (ja) 2001-12-25
EP1021824A4 (de) 2000-07-26
US6331488B1 (en) 2001-12-18
KR20010012837A (ko) 2001-02-26
DE69820662D1 (de) 2004-01-29
US20040209475A1 (en) 2004-10-21
DE69820662T2 (de) 2004-10-07
KR100413139B1 (ko) 2003-12-31
TW519702B (en) 2003-02-01
US6743724B2 (en) 2004-06-01

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