ATE299957T1 - Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre - Google Patents

Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre

Info

Publication number
ATE299957T1
ATE299957T1 AT00410038T AT00410038T ATE299957T1 AT E299957 T1 ATE299957 T1 AT E299957T1 AT 00410038 T AT00410038 T AT 00410038T AT 00410038 T AT00410038 T AT 00410038T AT E299957 T1 ATE299957 T1 AT E299957T1
Authority
AT
Austria
Prior art keywords
radiation
controlled atmosphere
treatment
treating
deposit
Prior art date
Application number
AT00410038T
Other languages
English (en)
Inventor
Papet Emmanuelle Touchais
Rene-Pierre Ducret
Original Assignee
Joint Industrial Processors For Electronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Industrial Processors For Electronics filed Critical Joint Industrial Processors For Electronics
Application granted granted Critical
Publication of ATE299957T1 publication Critical patent/ATE299957T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
AT00410038T 1999-04-26 2000-04-14 Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre ATE299957T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9905413A FR2792774B1 (fr) 1999-04-26 1999-04-26 Procede et dispositif de traitement d'un materiau par rayonnement electromagnetique et sous atmosphere controlee

Publications (1)

Publication Number Publication Date
ATE299957T1 true ATE299957T1 (de) 2005-08-15

Family

ID=9544997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00410038T ATE299957T1 (de) 1999-04-26 2000-04-14 Verfahren und vorrichtung zur behandlung eines werkstoffes mit elektromagnetischer strahlung in einer kontrollierten atmosphäre

Country Status (7)

Country Link
US (1) US6259066B1 (de)
EP (1) EP1048747B1 (de)
JP (1) JP2001023916A (de)
KR (1) KR100607895B1 (de)
AT (1) ATE299957T1 (de)
DE (1) DE60021302T2 (de)
FR (1) FR2792774B1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267155B1 (ko) * 1996-09-13 2000-10-16 아끼구사 나오유끼 반도체 장치의 제조 방법 및 제조 장치
DE10060987B4 (de) * 2000-09-22 2006-08-03 Schott Ag Verfahren und Vorrichtung zum Keramisieren des Ausgangsglases einer Glaskeramik sowie Verwendungen von Verfahren und Vorrichtung
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US20060032846A1 (en) * 2004-07-27 2006-02-16 Dieter Haas Infrared heating element and a substrate type vacuum chamber, particularly for vacuum coating facilities
US20140003800A1 (en) * 2004-09-24 2014-01-02 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
CN101208770B (zh) * 2005-06-22 2010-10-27 艾克塞利斯技术公司 用于处理介电材料的设备和方法
US7547633B2 (en) * 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7822324B2 (en) * 2006-08-14 2010-10-26 Applied Materials, Inc. Load lock chamber with heater in tube
TWM413957U (en) * 2010-10-27 2011-10-11 Tangteck Equipment Inc Diffusion furnace apparatus
KR101224059B1 (ko) * 2012-02-28 2013-01-21 (주)앤피에스 기판 처리 장치 및 그 처리 방법
TWI494174B (zh) * 2012-05-16 2015-08-01 核心能源實業有限公司 基板表面處理設備
US20170194162A1 (en) * 2016-01-05 2017-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing equipment and method for treating wafer
DE102020208184B4 (de) 2020-06-30 2025-02-20 Singulus Technologies Aktiengesellschaft Heizsystem und Verfahren zum Aufheizen von großflächigen Substraten
CN119368125B (zh) * 2024-11-27 2025-09-19 哈尔滨工业大学 高温与辐射协同可控的新型热辐射催化反应装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158914A (ja) * 1982-03-16 1983-09-21 Semiconductor Res Found 半導体製造装置
CH670171A5 (de) 1986-07-22 1989-05-12 Bbc Brown Boveri & Cie
JPH06333917A (ja) * 1993-05-20 1994-12-02 Fujitsu Ltd 半導体ウエーハの酸化前処理方法
US5441569A (en) * 1993-11-29 1995-08-15 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for laser deposition of durable coatings
JPH08264472A (ja) * 1995-03-24 1996-10-11 Hitachi Ltd 半導体装置の製造方法及び半導体製造装置
US5863327A (en) * 1997-02-10 1999-01-26 Micron Technology, Inc. Apparatus for forming materials
JP4252634B2 (ja) * 1997-03-11 2009-04-08 株式会社半導体エネルギー研究所 薄膜の加熱処理方法

Also Published As

Publication number Publication date
DE60021302D1 (de) 2005-08-25
EP1048747B1 (de) 2005-07-20
FR2792774A1 (fr) 2000-10-27
KR20010014814A (ko) 2001-02-26
JP2001023916A (ja) 2001-01-26
KR100607895B1 (ko) 2006-08-03
EP1048747A1 (de) 2000-11-02
US6259066B1 (en) 2001-07-10
FR2792774B1 (fr) 2003-08-01
DE60021302T2 (de) 2006-05-24

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