ATE443164T1 - Verfahren und vorrichtung zur behandlung von halbleitersubstraten mit hydroxylradikalen - Google Patents

Verfahren und vorrichtung zur behandlung von halbleitersubstraten mit hydroxylradikalen

Info

Publication number
ATE443164T1
ATE443164T1 AT01303631T AT01303631T ATE443164T1 AT E443164 T1 ATE443164 T1 AT E443164T1 AT 01303631 T AT01303631 T AT 01303631T AT 01303631 T AT01303631 T AT 01303631T AT E443164 T1 ATE443164 T1 AT E443164T1
Authority
AT
Austria
Prior art keywords
precursor
hydroxyl radicals
semiconductor substrates
hydroxyl
treating semiconductor
Prior art date
Application number
AT01303631T
Other languages
English (en)
Inventor
Himanshu Pokhama
Srinivas D Nemani
Francimar Campana
Li-Qun Xia
Shankar Chandran
Chen-An Chen
Ellie Yieh
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE443164T1 publication Critical patent/ATE443164T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT01303631T 2000-04-21 2001-04-20 Verfahren und vorrichtung zur behandlung von halbleitersubstraten mit hydroxylradikalen ATE443164T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/557,079 US6596343B1 (en) 2000-04-21 2000-04-21 Method and apparatus for processing semiconductor substrates with hydroxyl radicals

Publications (1)

Publication Number Publication Date
ATE443164T1 true ATE443164T1 (de) 2009-10-15

Family

ID=24223973

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01303631T ATE443164T1 (de) 2000-04-21 2001-04-20 Verfahren und vorrichtung zur behandlung von halbleitersubstraten mit hydroxylradikalen

Country Status (6)

Country Link
US (2) US6596343B1 (de)
EP (1) EP1148150B1 (de)
JP (1) JP4739577B2 (de)
KR (1) KR100715074B1 (de)
AT (1) ATE443164T1 (de)
DE (1) DE60139912D1 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals
JP2002110611A (ja) * 2000-10-04 2002-04-12 Texas Instr Japan Ltd 半導体ウェハの洗浄方法及び装置
US20020127763A1 (en) * 2000-12-28 2002-09-12 Mohamed Arafa Sidewall spacers and methods of making same
US8749054B2 (en) 2010-06-24 2014-06-10 L. Pierre de Rochemont Semiconductor carrier with vertical power FET module
EP2249413A3 (de) * 2002-04-01 2011-02-02 Konica Corporation Träger und organisches elektrolumineszentes Bauelement mit einem solchen Träger
JP4843611B2 (ja) 2004-10-01 2011-12-21 デ，ロシェモント，エル．，ピエール セラミックアンテナモジュール及びその製造方法
US8163087B2 (en) * 2005-03-31 2012-04-24 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
JP4808436B2 (ja) * 2005-05-18 2011-11-02 株式会社神戸製鋼所 機能膜形成方法
US8350657B2 (en) 2005-06-30 2013-01-08 Derochemont L Pierre Power management module and method of manufacture
CN101213638B (zh) 2005-06-30 2011-07-06 L·皮尔·德罗什蒙 电子元件及制造方法
JP2007194582A (ja) * 2005-12-20 2007-08-02 Tokyo Electron Ltd 高誘電体薄膜の改質方法及び半導体装置
US7763917B2 (en) * 2006-01-24 2010-07-27 De Rochemont L Pierre Photovoltaic devices with silicon dioxide encapsulation layer and method to make same
US8354294B2 (en) 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US20080020549A1 (en) * 2006-07-20 2008-01-24 Qc Solutions, Inc. Method and apparatus for forming an oxide layer on semiconductors
US20090305515A1 (en) * 2008-06-06 2009-12-10 Dustin Ho Method and apparatus for uv curing with water vapor
US7959598B2 (en) 2008-08-20 2011-06-14 Asante Solutions, Inc. Infusion pump systems and methods
US8952858B2 (en) 2009-06-17 2015-02-10 L. Pierre de Rochemont Frequency-selective dipole antennas
US8922347B1 (en) 2009-06-17 2014-12-30 L. Pierre de Rochemont R.F. energy collection circuit for wireless devices
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8465587B2 (en) * 2009-12-30 2013-06-18 Cbl Technologies, Inc. Modern hydride vapor-phase epitaxy system and methods
KR101143631B1 (ko) * 2010-04-30 2012-05-09 에스케이하이닉스 주식회사 소자분리층을 포함하는 반도체 소자 형성 방법
US8552708B2 (en) 2010-06-02 2013-10-08 L. Pierre de Rochemont Monolithic DC/DC power management module with surface FET
US9023493B2 (en) 2010-07-13 2015-05-05 L. Pierre de Rochemont Chemically complex ablative max-phase material and method of manufacture
EP2609626B1 (de) 2010-08-23 2024-04-03 L. Pierre De Rochemont Power-fet mit einem resonanz-transistor-gate
CN103415925A (zh) 2010-11-03 2013-11-27 L·皮尔·德罗什蒙 具有单片集成的量子点器件的半导体芯片载体及其制造方法
DE102011001642B4 (de) * 2011-03-29 2014-12-31 Universität Bremen Verfahren zum Herstellen einer Polymerschicht
KR101373061B1 (ko) * 2013-03-04 2014-03-17 백경림 지퍼가 구비된 모자
US9561324B2 (en) 2013-07-19 2017-02-07 Bigfoot Biomedical, Inc. Infusion pump system and method
JP6354539B2 (ja) * 2014-11-25 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、記憶媒体
KR101727259B1 (ko) 2015-03-18 2017-04-17 연세대학교 산학협력단 산화물 박막 형성 방법 및 산화물 박막 형성 장치
TWI570263B (zh) * 2015-08-10 2017-02-11 炬力奈米科技有限公司 光輔助原子層沉積方法
WO2017123525A1 (en) 2016-01-13 2017-07-20 Bigfoot Biomedical, Inc. User interface for diabetes management system
US10806859B2 (en) 2016-01-14 2020-10-20 Bigfoot Biomedical, Inc. Adjusting insulin delivery rates
HK1256995A1 (zh) 2016-01-14 2019-10-11 Bigfoot Biomedical, Inc. 药物输送设备、系统和方法中的阻塞解决方案
US12383166B2 (en) 2016-05-23 2025-08-12 Insulet Corporation Insulin delivery system and methods with risk-based set points
US10363374B2 (en) 2016-05-26 2019-07-30 Insulet Corporation Multi-dose drug delivery device
US10858727B2 (en) 2016-08-19 2020-12-08 Applied Materials, Inc. High density, low stress amorphous carbon film, and process and equipment for its deposition
US11096624B2 (en) 2016-12-12 2021-08-24 Bigfoot Biomedical, Inc. Alarms and alerts for medication delivery devices and systems
US10881792B2 (en) 2017-01-13 2021-01-05 Bigfoot Biomedical, Inc. System and method for adjusting insulin delivery
US11033682B2 (en) 2017-01-13 2021-06-15 Bigfoot Biomedical, Inc. Insulin delivery methods, systems and devices
US10758675B2 (en) 2017-01-13 2020-09-01 Bigfoot Biomedical, Inc. System and method for adjusting insulin delivery
US10500334B2 (en) 2017-01-13 2019-12-10 Bigfoot Biomedical, Inc. System and method for adjusting insulin delivery
US10583250B2 (en) 2017-01-13 2020-03-10 Bigfoot Biomedical, Inc. System and method for adjusting insulin delivery
EP3568860B1 (de) 2017-01-13 2025-12-10 Insulet Corporation Insulinverabreichungsverfahren, -systeme und -vorrichtungen
KR101987705B1 (ko) * 2017-02-28 2019-06-11 (주)엔피홀딩스 Uv 램프를 이용한 기판 세정 노즐
USD874471S1 (en) 2017-06-08 2020-02-04 Insulet Corporation Display screen with a graphical user interface
USD928199S1 (en) 2018-04-02 2021-08-17 Bigfoot Biomedical, Inc. Medication delivery device with icons
US12562251B1 (en) 2018-05-09 2026-02-24 Bigfoot Biomedical, Inc. Computing architecture for assuring the provenance of medication therapy related parameters, and related systems, methods and devices
USD920343S1 (en) 2019-01-09 2021-05-25 Bigfoot Biomedical, Inc. Display screen or portion thereof with graphical user interface associated with insulin delivery
USD977502S1 (en) 2020-06-09 2023-02-07 Insulet Corporation Display screen with graphical user interface
CA3201894A1 (en) 2020-12-18 2022-06-23 Matthew Alles Integration of a medicament delivery device with a smartwatch and a vehicle infotainment system
US12514980B2 (en) 2021-06-30 2026-01-06 Insulet Corporation Adjustment of medicament delivery by a medicament delivery device based on menstrual cycle phase
US12521486B2 (en) 2021-07-16 2026-01-13 Insulet Corporation Method for modification of insulin delivery during pregnancy in automatic insulin delivery systems
EP4646726A1 (de) 2023-01-06 2025-11-12 Insulet Corporation Automatisch oder manuell initiierte mahlzeitbolusabgabe mit anschliessender automatischer sicherheitseinschränkungsrelaxation

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279705A (en) * 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
US5126111A (en) * 1990-12-05 1992-06-30 Nutech Energy Systems Inc. Fluid purification
JP2989063B2 (ja) * 1991-12-12 1999-12-13 キヤノン株式会社 薄膜形成装置および薄膜形成方法
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2870307B2 (ja) * 1992-07-10 1999-03-17 日本電気株式会社 移動通信制御局および多重接続方式
JPH086181B2 (ja) * 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
US5395522A (en) * 1993-02-23 1995-03-07 Anatel Corporation Apparatus for removal of organic material from water
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
FR2734402B1 (fr) * 1995-05-15 1997-07-18 Brouquet Pierre Procede pour l'isolement electrique en micro-electronique, applicable aux cavites etroites, par depot d'oxyde a l'etat visqueux et dispositif correspondant
JPH09232296A (ja) * 1996-02-23 1997-09-05 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
WO1997031391A1 (en) * 1996-02-23 1997-08-28 Ebara Corporation Chemical vapor deposition method and chemical vapor deposition apparatus
US5792369A (en) * 1996-04-04 1998-08-11 Johnson; Dennis E. J. Apparatus and processes for non-chemical plasma ion disinfection of water
US5710079A (en) * 1996-05-24 1998-01-20 Lsi Logic Corporation Method and apparatus for forming dielectric films
JPH1081588A (ja) * 1996-09-05 1998-03-31 Matsushita Electric Ind Co Ltd 半導体ダイヤモンド及びその形成方法
JPH10321610A (ja) * 1997-03-19 1998-12-04 Fujitsu Ltd 半導体装置の製造方法
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6413583B1 (en) * 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
FI108375B (fi) * 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
US6200387B1 (en) * 1998-10-30 2001-03-13 Dangsheng P. E. Ni Method and system for processing substrates using nebulized chemicals created by heated chemical gases
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals

Also Published As

Publication number Publication date
KR20010098803A (ko) 2001-11-08
DE60139912D1 (de) 2009-10-29
EP1148150B1 (de) 2009-09-16
JP2002064095A (ja) 2002-02-28
US20030221621A1 (en) 2003-12-04
EP1148150A2 (de) 2001-10-24
US6596343B1 (en) 2003-07-22
JP4739577B2 (ja) 2011-08-03
KR100715074B1 (ko) 2007-05-07
EP1148150A3 (de) 2006-06-28

Similar Documents

Publication Publication Date Title
ATE443164T1 (de) Verfahren und vorrichtung zur behandlung von halbleitersubstraten mit hydroxylradikalen
DE69404564D1 (de) Verfahren zum Herstellen verbesserter CVD Kupferfilme
KR930001347A (ko) 산화 규소 막을 형성시키기 위한 화학 증착법
DE59304913D1 (de) Verfahren und vorrichtung zur biologischen behandlung von organisch belastetem abwasser und organischem abfall
ATE64237T1 (de) Verfahren zum herstellen von mit bor und phosphor dotierten siliziumoxid-schichten fuer integrierte halbleiterschaltungen.
DE59409931D1 (de) Verfahren und vorrichtung zur chemischen behandlung von substraten
DE69326651D1 (de) Verfahren zur Herstellung von Mustern
DE3785749D1 (de) Enrichtung zum herstellen eines plasmas und zur behandlung von substraten darin.
DE69432175D1 (de) Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen
ATE92438T1 (de) Verfahren und anlage zur behandlung von mit schadstoffen belasteten fluessigkeiten.
DE60230242D1 (de) Verfahren und Vorrichtung zur Diamantsynthese durch chemische Dampfabscheidung
ATE326556T1 (de) Vorrichtung und verfahren zur herstellung von flexiblen halbleiter-einrichtungen
ATE86794T1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
SE8902391D0 (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
KR960026408A (ko) TiN막의 형성 방법
ATE151670T1 (de) Sperrfilm und verfahren zu seiner herstellung
DE3686571D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
TW427952B (en) Procedure for drying silicon
ATE134070T1 (de) Verfahren zum herstellen einer abgeschiedenen schicht und verfahren zum herstellen einer halbleitervorrichtung
ATE342268T1 (de) Verfahren zur herstellung von aminoalkylsilanen
JPH01239933A (ja) アッシング方法
ATE275646T1 (de) Vorrichtung und verfahren zur plasmagestützten oberflächenbehandlung von substraten im vakuum
DE3784547D1 (de) Herstellungsverfahren einer niedergeschlagenen schicht.
JPS62235295A (ja) ダイヤモンドの合成法
JPS6243132A (ja) プラズマ処理方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties