ATE300628T1 - Sputtertargets auf pt-co-basis - Google Patents
Sputtertargets auf pt-co-basisInfo
- Publication number
- ATE300628T1 ATE300628T1 AT02762011T AT02762011T ATE300628T1 AT E300628 T1 ATE300628 T1 AT E300628T1 AT 02762011 T AT02762011 T AT 02762011T AT 02762011 T AT02762011 T AT 02762011T AT E300628 T1 ATE300628 T1 AT E300628T1
- Authority
- AT
- Austria
- Prior art keywords
- alloy
- sputter target
- based sputter
- densify
- hip
- Prior art date
Links
- 239000000956 alloy Substances 0.000 abstract 5
- 229910045601 alloy Inorganic materials 0.000 abstract 5
- 239000000843 powder Substances 0.000 abstract 2
- UGGYKLULVSLVBW-UHFFFAOYSA-N [Pt].[B].[Cr].[Co] Chemical compound [Pt].[B].[Cr].[Co] UGGYKLULVSLVBW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 1
- 238000000717 platinum sputter deposition Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Micro-Capsules (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/832,181 US6797137B2 (en) | 2001-04-11 | 2001-04-11 | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
| PCT/US2002/010909 WO2002083974A1 (en) | 2001-04-11 | 2002-04-08 | Pt-co based sputtering targets |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE300628T1 true ATE300628T1 (de) | 2005-08-15 |
Family
ID=25260918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02762011T ATE300628T1 (de) | 2001-04-11 | 2002-04-08 | Sputtertargets auf pt-co-basis |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6797137B2 (de) |
| EP (2) | EP1395689B1 (de) |
| JP (2) | JP3962690B2 (de) |
| KR (2) | KR100668790B1 (de) |
| CN (2) | CN1827843A (de) |
| AT (1) | ATE300628T1 (de) |
| DE (1) | DE60205251T2 (de) |
| WO (1) | WO2002083974A1 (de) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
| US6797137B2 (en) | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
| US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
| US7404877B2 (en) | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
| US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
| US7378356B2 (en) | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
| JP2005529239A (ja) * | 2002-06-07 | 2005-09-29 | ヘラエウス インコーポレーテッド | 処理従順な金属間化合物スパッタリングターゲットの製造方法 |
| US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
| US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
| US7993773B2 (en) | 2002-08-09 | 2011-08-09 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
| US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
| US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
| US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
| US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
| US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
| AU2003261463A1 (en) | 2002-08-27 | 2004-03-19 | Symmorphix, Inc. | Optically coupling into highly uniform waveguides |
| US7205662B2 (en) | 2003-02-27 | 2007-04-17 | Symmorphix, Inc. | Dielectric barrier layer films |
| US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
| US7238628B2 (en) | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
| FR2859618B1 (fr) * | 2003-09-11 | 2006-01-20 | Seb Sa | Surface de cuisson facile a nettoyer et article electromenager comportant une telle surface |
| JP4110533B2 (ja) * | 2004-02-27 | 2008-07-02 | 日立金属株式会社 | Mo系ターゲット材の製造方法 |
| SG119249A1 (en) * | 2004-08-05 | 2006-02-28 | Agency Science Tech & Res | An alloying system |
| KR101127370B1 (ko) | 2004-12-08 | 2012-03-29 | 인피니트 파워 솔루션스, 인크. | LiCoO2의 증착 |
| US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
| US7494617B2 (en) * | 2005-04-18 | 2009-02-24 | Heraeus Inc. | Enhanced formulation of cobalt alloy matrix compositions |
| US20060289294A1 (en) * | 2005-06-24 | 2006-12-28 | Heraeus, Inc. | Enhanced oxygen non-stoichiometry compensation for thin films |
| US20070017803A1 (en) * | 2005-07-22 | 2007-01-25 | Heraeus, Inc. | Enhanced sputter target manufacturing method |
| US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
| WO2007062089A1 (en) * | 2005-11-22 | 2007-05-31 | Bodycote Imt, Inc. | Fabrication of ruthenium and ruthenium alloy sputtering targets with low oxygen content |
| US20070169853A1 (en) * | 2006-01-23 | 2007-07-26 | Heraeus, Inc. | Magnetic sputter targets manufactured using directional solidification |
| CN101523571A (zh) | 2006-09-29 | 2009-09-02 | 无穷动力解决方案股份有限公司 | 柔性基板上沉积的电池层的掩模和材料限制 |
| US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
| JP4970003B2 (ja) * | 2006-11-17 | 2012-07-04 | 山陽特殊製鋼株式会社 | Co−B系ターゲット材およびその製造方法 |
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| JP5155565B2 (ja) * | 2007-01-04 | 2013-03-06 | 三井金属鉱業株式会社 | CoCrPt系スパッタリングターゲットおよびその製造方法 |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| JP2009001861A (ja) * | 2007-06-21 | 2009-01-08 | Mitsubishi Materials Corp | 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット |
| US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
| CN101903560B (zh) | 2007-12-21 | 2014-08-06 | 无穷动力解决方案股份有限公司 | 用于电解质膜的溅射靶的方法 |
| CN100549199C (zh) * | 2007-12-26 | 2009-10-14 | 安泰科技股份有限公司 | 一种磁控溅射Co-Cr-Ta合金靶的制造方法 |
| US8518581B2 (en) | 2008-01-11 | 2013-08-27 | Inifinite Power Solutions, Inc. | Thin film encapsulation for thin film batteries and other devices |
| JP5359890B2 (ja) * | 2008-02-18 | 2013-12-04 | 日立金属株式会社 | 軟磁性膜形成用Fe−Co系合金スパッタリングターゲット材 |
| WO2009124191A2 (en) | 2008-04-02 | 2009-10-08 | Infinite Power Solutions, Inc. | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
| US8968528B2 (en) * | 2008-04-14 | 2015-03-03 | United Technologies Corporation | Platinum-modified cathodic arc coating |
| US8394243B1 (en) | 2008-07-24 | 2013-03-12 | Wd Media, Inc. | Sputtered cobalt oxide for perpendicular magnetic recording medium with low media noise |
| JP2012500610A (ja) | 2008-08-11 | 2012-01-05 | インフィニット パワー ソリューションズ, インコーポレイテッド | 電磁エネルギー獲得ための統合コレクタ表面を有するエネルギーデバイスおよびその方法 |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| CN102150185B (zh) | 2008-09-12 | 2014-05-28 | 无穷动力解决方案股份有限公司 | 具有经由电磁能进行数据通信的组成导电表面的能量装置及其方法 |
| US8488276B1 (en) | 2008-09-30 | 2013-07-16 | WD Media, LLC | Perpendicular magnetic recording medium with grain isolation magnetic anistropy layer |
| WO2010042594A1 (en) | 2008-10-08 | 2010-04-15 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
| US20110003177A1 (en) * | 2009-07-06 | 2011-01-06 | Solar Applied Materials Technology Corp. | Method for producing sputtering target containing boron, thin film and magnetic recording media |
| CN102576828B (zh) | 2009-09-01 | 2016-04-20 | 萨普拉斯特研究有限责任公司 | 具有集成薄膜电池的印刷电路板 |
| FI20105340A0 (fi) * | 2010-03-31 | 2010-03-31 | Metso Minerals Inc | Menetelmä ja järjestelmä kappaleen valmistamiseksi kuumaisostaattisella puristuksella, keerna, pinnoitteen esivalmiste, sekä keernan käyttö |
| EP2577777B1 (de) | 2010-06-07 | 2016-12-28 | Sapurast Research LLC | Wiederaufladbare elektrochemische vorrichtung von hoher dichte |
| JP4871406B1 (ja) * | 2010-08-06 | 2012-02-08 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
| MY158512A (en) * | 2010-12-09 | 2016-10-14 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
| US8993133B1 (en) | 2010-12-23 | 2015-03-31 | WD Media, LLC | Intermediate layer for perpendicular magnetic recording medium with high permeability grain boundaries |
| TWI421353B (zh) * | 2011-03-18 | 2014-01-01 | 國立臺灣大學 | 具奈米級釘紮效應的磁性材料 |
| US8703233B2 (en) | 2011-09-29 | 2014-04-22 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets by cold spray |
| CN102343437B (zh) * | 2011-11-11 | 2014-03-26 | 宁波江丰电子材料有限公司 | 钨靶材的制作方法 |
| JP5748639B2 (ja) * | 2011-11-17 | 2015-07-15 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
| JP5863411B2 (ja) * | 2011-11-17 | 2016-02-16 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
| US20160276143A1 (en) * | 2013-10-29 | 2016-09-22 | Tanaka Kikinzoku Kogyo K.K. | Target for magnetron sputtering |
| CN106133185B (zh) * | 2014-03-27 | 2018-09-28 | 捷客斯金属株式会社 | 包含Ni-P合金或Ni-Pt-P合金的溅射靶及其制造方法 |
| CN104032274B (zh) * | 2014-06-12 | 2016-07-20 | 贵研铂业股份有限公司 | 一种CoCrPt系合金溅射靶材和薄膜及其制备方法 |
| US9685184B1 (en) | 2014-09-25 | 2017-06-20 | WD Media, LLC | NiFeX-based seed layer for magnetic recording media |
| JP7086514B2 (ja) * | 2015-12-28 | 2022-06-20 | Jx金属株式会社 | コバルト製又はコバルト基合金製スパッタリングターゲット及びその製造方法 |
| TWI636149B (zh) * | 2016-09-12 | 2018-09-21 | Jx Nippon Mining & Metals Corporation | 強磁性材濺鍍靶 |
| CN113039298B (zh) * | 2018-11-22 | 2022-07-08 | 田中贵金属工业株式会社 | 医疗用Pt-Co系合金 |
| US11881238B1 (en) | 2022-08-03 | 2024-01-23 | Western Digital Technologies, Inc. | Sector mapout of low coercivity media for enhancing aerial density |
| CN116121700B (zh) * | 2022-12-30 | 2025-03-18 | 南京航空航天大学 | 一种耐火元素掺杂的耐磨梯度HfMSiCN陶瓷层及其制备方法 |
| WO2024214353A1 (ja) * | 2023-04-13 | 2024-10-17 | Jx金属株式会社 | スパッタリングターゲット、スパッタリングターゲットの製造方法、積層膜、積層膜の製造方法、磁気記録媒体、及び、磁気記録媒体の製造方法 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4135286A (en) | 1977-12-22 | 1979-01-23 | United Technologies Corporation | Sputtering target fabrication method |
| US4331476A (en) | 1980-01-31 | 1982-05-25 | Tektronix, Inc. | Sputtering targets with low mobile ion contamination |
| JPS6066425A (ja) | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Lsi電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法 |
| AT383758B (de) | 1985-12-23 | 1987-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines sputter-targets |
| JPH0791636B2 (ja) | 1987-03-09 | 1995-10-04 | 日立金属株式会社 | スパツタリングタ−ゲツトおよびその製造方法 |
| US4820393A (en) | 1987-05-11 | 1989-04-11 | Tosoh Smd, Inc. | Titanium nitride sputter targets |
| DE3716852C1 (de) | 1987-05-20 | 1988-07-14 | Demetron | Sputtertarget zur Erzeugung optisch transparenter Schichten und Verfahren zur Herstellung dieser Targets |
| JPH0254760A (ja) | 1988-08-19 | 1990-02-23 | Hitachi Metals Ltd | ターゲットの製造方法 |
| US5306569A (en) | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
| US5160534A (en) | 1990-06-15 | 1992-11-03 | Hitachi Metals Ltd. | Titanium-tungsten target material for sputtering and manufacturing method therefor |
| JPH0539566A (ja) | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| JP3494302B2 (ja) | 1991-03-26 | 2004-02-09 | 日立金属株式会社 | Co−Cr−Pt系磁気記録媒体用ターゲット |
| US5234487A (en) | 1991-04-15 | 1993-08-10 | Tosoh Smd, Inc. | Method of producing tungsten-titanium sputter targets and targets produced thereby |
| JPH0598433A (ja) | 1991-08-30 | 1993-04-20 | Mitsubishi Materials Corp | スパツタリング用ターゲツトの製造方法 |
| JPH05148631A (ja) | 1991-10-31 | 1993-06-15 | Mitsubishi Materials Corp | スパツタリング用ターゲツト |
| US5342571A (en) | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
| JPH05295531A (ja) | 1992-04-21 | 1993-11-09 | Toshiba Corp | Ti−W系スパッタリングターゲットおよびその製造方法 |
| US5415829A (en) | 1992-12-28 | 1995-05-16 | Nikko Kyodo Co., Ltd. | Sputtering target |
| US5561833A (en) | 1993-03-11 | 1996-10-01 | Japan Metals & Chemicals Co., Ltd. | Method of making high oxygen chromium target |
| US5464520A (en) | 1993-03-19 | 1995-11-07 | Japan Energy Corporation | Silicide targets for sputtering and method of manufacturing the same |
| JP2794382B2 (ja) | 1993-05-07 | 1998-09-03 | 株式会社ジャパンエナジー | スパッタリング用シリサイドターゲット及びその製造方法 |
| JP2806228B2 (ja) * | 1993-10-25 | 1998-09-30 | 株式会社神戸製鋼所 | 難加工性Co合金の低透磁率化方法 |
| DE4438202A1 (de) * | 1994-10-26 | 1996-05-02 | Leybold Materials Gmbh | Target für eine Magnetron-Kathodenzerstäubungsvorrichtung |
| DE19508535A1 (de) * | 1995-03-10 | 1996-09-12 | Leybold Materials Gmbh | Sputtertarget aus einer Kobalt-Basislegierung mit hohem Magnetfelddurchgriff |
| JP3458871B2 (ja) | 1995-03-31 | 2003-10-20 | 日立金属株式会社 | クロムタ−ゲットおよびその製造方法 |
| US5778302A (en) | 1995-09-14 | 1998-07-07 | Tosoh Smd, Inc. | Methods of making Cr-Me sputter targets and targets produced thereby |
| JP3816595B2 (ja) * | 1996-09-18 | 2006-08-30 | 三井金属鉱業株式会社 | スパッタリングターゲットの製造方法 |
| JP2989169B2 (ja) | 1997-08-08 | 1999-12-13 | 日立金属株式会社 | Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
| US20020014406A1 (en) | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
| JP2000038660A (ja) | 1998-07-21 | 2000-02-08 | Hitachi Metals Ltd | CoPt系スパッタリングターゲットおよびその製造方法ならびにCoPt系磁気記録媒体 |
| JP2000038661A (ja) | 1998-07-21 | 2000-02-08 | Hitachi Metals Ltd | Co合金系ターゲット、その製造方法、スパッタリング装置、磁気記録膜および磁気記録装置 |
| JP2000282229A (ja) | 1999-03-29 | 2000-10-10 | Hitachi Metals Ltd | CoPt系スパッタリングターゲットおよびその製造方法ならびにこれを用いた磁気記録膜およびCoPt系磁気記録媒体 |
| US6042777A (en) | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
| JP3527939B2 (ja) | 2000-03-16 | 2004-05-17 | 独立行政法人産業技術総合研究所 | スパッタリングターゲット組立体 |
| US6514358B1 (en) * | 2000-04-05 | 2003-02-04 | Heraeus, Inc. | Stretching of magnetic materials to increase pass-through-flux (PTF) |
| US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
-
2001
- 2001-04-11 US US09/832,181 patent/US6797137B2/en not_active Expired - Lifetime
-
2002
- 2002-04-08 KR KR1020037013298A patent/KR100668790B1/ko not_active Expired - Fee Related
- 2002-04-08 JP JP2002581711A patent/JP3962690B2/ja not_active Expired - Fee Related
- 2002-04-08 EP EP02762011A patent/EP1395689B1/de not_active Expired - Lifetime
- 2002-04-08 KR KR1020057021065A patent/KR100682617B1/ko not_active Expired - Fee Related
- 2002-04-08 DE DE60205251T patent/DE60205251T2/de not_active Expired - Fee Related
- 2002-04-08 WO PCT/US2002/010909 patent/WO2002083974A1/en not_active Ceased
- 2002-04-08 EP EP05011333A patent/EP1595971A1/de not_active Withdrawn
- 2002-04-08 CN CNA2005101204543A patent/CN1827843A/zh active Pending
- 2002-04-08 AT AT02762011T patent/ATE300628T1/de not_active IP Right Cessation
- 2002-04-08 CN CNB028082052A patent/CN100344789C/zh not_active Expired - Fee Related
-
2004
- 2004-01-13 US US10/755,229 patent/US7229588B2/en not_active Expired - Fee Related
-
2005
- 2005-10-31 JP JP2005316988A patent/JP2006144124A/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN100344789C (zh) | 2007-10-24 |
| EP1395689B1 (de) | 2005-07-27 |
| CN1827843A (zh) | 2006-09-06 |
| US20020170821A1 (en) | 2002-11-21 |
| JP3962690B2 (ja) | 2007-08-22 |
| KR20050110046A (ko) | 2005-11-22 |
| KR20040007493A (ko) | 2004-01-24 |
| DE60205251D1 (en) | 2005-09-01 |
| JP2006144124A (ja) | 2006-06-08 |
| CN1503854A (zh) | 2004-06-09 |
| HK1064130A1 (en) | 2005-01-21 |
| DE60205251T2 (de) | 2006-05-24 |
| EP1595971A1 (de) | 2005-11-16 |
| WO2002083974A1 (en) | 2002-10-24 |
| EP1395689A1 (de) | 2004-03-10 |
| KR100682617B1 (ko) | 2007-02-15 |
| US7229588B2 (en) | 2007-06-12 |
| KR100668790B1 (ko) | 2007-01-16 |
| US20040188249A1 (en) | 2004-09-30 |
| JP2004532931A (ja) | 2004-10-28 |
| US6797137B2 (en) | 2004-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE300628T1 (de) | Sputtertargets auf pt-co-basis | |
| EP1956103B8 (de) | Pulver für interne Elektroden von mehrschichtigen Keramikkondensatoren | |
| DK1423550T3 (da) | Höjbestandige, ved rumtemperatur plastisk deformerbare berylliumfrie formstöbte elementer af zirkonlegeringer | |
| EP1600517A3 (de) | Bleifreie Automatenkupferlegierung | |
| ATE363549T1 (de) | Lotlegierung | |
| DE502004010622D1 (de) | Al-Mg-Si-Aluminium-Gusslegierung mit Scandium | |
| CA2587237A1 (en) | Titanium aluminide based alloy | |
| EP1403884A3 (de) | Rasch erstarrte Legierung für Herstellung eines anisotropen Magnetpulvers und eines Verbundmagnets | |
| TW200619397A (en) | Near β-type titanium alloy | |
| DE69208520D1 (de) | Karbonitrid auf Titanbasis mit Anreicherung der Bindemetallphase | |
| WO2003027355A1 (en) | Soft metal and method for preparation thereof, and exterior part of watch and method for preparation thereof | |
| ATE125576T1 (de) | Gesinterte karbonitridlegierung mit hochlegierter bindemetallphase. | |
| EP1130125A3 (de) | Gut wärmeleitende Aluminium-Legierung zum Druckgiessen und hergestelltes Gussstück | |
| CA2300625A1 (en) | Abradable quasicrystalline coating | |
| SE9202837L (sv) | Sintrad titanbaserad karbonitridlegering med hårdämnen med kärna-bård-struktur och sätt att tillverka denna | |
| ID26231A (id) | Paduan logam dua fasa titanium aluminida | |
| TW200637922A (en) | Enhanced formulation of cobalt alloy matrix compositions | |
| WO2001055465A1 (en) | Dental alloys | |
| JPS6439341A (en) | Al-si-mn sintered alloy for forging | |
| US4447392A (en) | Ductile silver based brazing alloys containing a reactive metal and manganese or germanium or mixtures thereof | |
| SG141423A1 (en) | Advanced erosion resistant carbonitride cermets | |
| RU2001125968A (ru) | Сплав на основе титана и изделие, выполненное из него | |
| EP0512968A3 (en) | Sintered carbonitride with improved wear resistance | |
| RU94008725A (ru) | Жаропрочный сплав на основе никеля | |
| Alekseeva | Phase structure of alloys of the C-Fe-U system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |