ATE322741T1 - Verfahren zur regenerierung einer ätzlösung, ätzverfahren und ätzvorrichtung - Google Patents

Verfahren zur regenerierung einer ätzlösung, ätzverfahren und ätzvorrichtung

Info

Publication number
ATE322741T1
ATE322741T1 AT03020972T AT03020972T ATE322741T1 AT E322741 T1 ATE322741 T1 AT E322741T1 AT 03020972 T AT03020972 T AT 03020972T AT 03020972 T AT03020972 T AT 03020972T AT E322741 T1 ATE322741 T1 AT E322741T1
Authority
AT
Austria
Prior art keywords
etching
etching solution
silicon compound
phosphoric acid
solution
Prior art date
Application number
AT03020972T
Other languages
English (en)
Inventor
Nobuhiko Izuta
Mitsugu Murata
Original Assignee
M Fsi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by M Fsi Ltd filed Critical M Fsi Ltd
Application granted granted Critical
Publication of ATE322741T1 publication Critical patent/ATE322741T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
AT03020972T 2002-09-17 2003-09-16 Verfahren zur regenerierung einer ätzlösung, ätzverfahren und ätzvorrichtung ATE322741T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002269405 2002-09-17

Publications (1)

Publication Number Publication Date
ATE322741T1 true ATE322741T1 (de) 2006-04-15

Family

ID=31973197

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03020972T ATE322741T1 (de) 2002-09-17 2003-09-16 Verfahren zur regenerierung einer ätzlösung, ätzverfahren und ätzvorrichtung

Country Status (7)

Country Link
US (1) US7238295B2 (de)
EP (1) EP1403907B1 (de)
KR (1) KR100705881B1 (de)
CN (1) CN100336182C (de)
AT (1) ATE322741T1 (de)
DE (1) DE60304412T2 (de)
TW (1) TWI233157B (de)

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JP4786351B2 (ja) * 2006-01-20 2011-10-05 株式会社東芝 処理装置及び処理方法
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US20080217296A1 (en) * 2007-03-07 2008-09-11 United Microelectronics Corp. Etching apparatus for semiconductor processing apparatus and method thereof for recycling etchant solutions
US8460478B2 (en) * 2007-05-29 2013-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Wet processing apparatuses
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US8298435B2 (en) * 2007-10-19 2012-10-30 International Business Machines Corporation Selective etching bath methods
TWI394501B (zh) * 2009-12-28 2013-04-21 Zhen Ding Technology Co Ltd 蝕刻系統及蝕刻液再生方法
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CN102653451A (zh) * 2011-03-01 2012-09-05 三福化工股份有限公司 玻璃基板连续结晶式化学蚀刻方法与设备
US9573404B2 (en) * 2011-10-28 2017-02-21 Fujifilm Corporation Manufacturing method and manufacturing apparatus of support for planographic printing plate
US8580133B2 (en) * 2011-11-14 2013-11-12 Globalfoundries Inc. Methods of controlling the etching of silicon nitride relative to silicon dioxide
KR101302650B1 (ko) * 2012-02-03 2013-09-10 주식회사 엠엠테크 필터링 기능을 구비한 에칭 탱크
JP2014099480A (ja) * 2012-11-13 2014-05-29 Fujifilm Corp 半導体基板のエッチング方法及び半導体素子の製造方法
CN103043913B (zh) * 2013-01-21 2015-10-21 汕头市拓捷科技有限公司 一种使用可控流体场的玻璃蚀刻设备
US9887095B2 (en) * 2013-03-12 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an etch process with silicon concentration control
WO2014151778A1 (en) * 2013-03-15 2014-09-25 Tel Fsi, Inc Processing system and method for providing a heated etching solution
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
TWI578396B (zh) * 2013-12-11 2017-04-11 斯克林集團公司 基板處理方法及基板處理裝置
JP2016059855A (ja) * 2014-09-17 2016-04-25 株式会社東芝 処理装置、及び、処理液の再利用方法
TW201713751A (zh) * 2015-10-06 2017-04-16 聯華電子股份有限公司 酸槽補酸系統與方法
CN105239145A (zh) * 2015-10-29 2016-01-13 桂林斯壮微电子有限责任公司 一种去溢料装置
CN105568285B (zh) * 2015-12-31 2018-04-13 东旭（昆山）显示材料有限公司 蚀刻装置
KR102547807B1 (ko) * 2016-09-09 2023-06-28 오씨아이 주식회사 식각 용액의 재생 방법 및 시스템
JP7224117B2 (ja) * 2018-06-15 2023-02-17 東京エレクトロン株式会社 基板処理装置および処理液再利用方法
CN109148338A (zh) * 2018-09-04 2019-01-04 杭州中芯晶圆半导体股份有限公司 一种提高腐蚀机混酸换液效率的方法及装置
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
KR102757685B1 (ko) 2019-02-20 2025-01-21 상하이 인스티튜트 오브 아이씨 매터리얼스 습식 화학에 의한 Si3N4 선택성 제거의 필요성
KR102296540B1 (ko) * 2019-11-07 2021-09-01 김재구 폐 에칭액의 불순물 저감 시스템
TWI878533B (zh) * 2020-05-25 2025-04-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
CN112044300B (zh) * 2020-08-25 2022-09-20 福建天甫电子材料有限公司 一种用于电子级二氧化硅蚀刻液的制备装置及制备工艺
CN115148643B (zh) * 2021-10-27 2025-05-13 中国科学院上海微系统与信息技术研究所 湿法蚀刻设备及湿法蚀刻方法
CN116288359A (zh) * 2023-03-28 2023-06-23 福建钰融科技有限公司 一种废铝蚀刻液回收装置及废铝蚀刻液回收方法
CN119176530A (zh) * 2024-11-25 2024-12-24 陕西高科环保科技股份有限公司 一种废磷酸蚀刻液纯化再生磷酸的方法及再生磷酸

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Also Published As

Publication number Publication date
EP1403907B1 (de) 2006-04-05
US7238295B2 (en) 2007-07-03
KR20040025583A (ko) 2004-03-24
TWI233157B (en) 2005-05-21
DE60304412D1 (de) 2006-05-18
CN100336182C (zh) 2007-09-05
TW200405458A (en) 2004-04-01
EP1403907A1 (de) 2004-03-31
US20040200806A1 (en) 2004-10-14
KR100705881B1 (ko) 2007-04-10
CN1495865A (zh) 2004-05-12
DE60304412T2 (de) 2006-09-21

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