ATE343844T1 - Niobkondensator und verfahren zu dessen herstellung - Google Patents

Niobkondensator und verfahren zu dessen herstellung

Info

Publication number
ATE343844T1
ATE343844T1 AT99959774T AT99959774T ATE343844T1 AT E343844 T1 ATE343844 T1 AT E343844T1 AT 99959774 T AT99959774 T AT 99959774T AT 99959774 T AT99959774 T AT 99959774T AT E343844 T1 ATE343844 T1 AT E343844T1
Authority
AT
Austria
Prior art keywords
nbox
layer
niobium
electrodes
capacitor
Prior art date
Application number
AT99959774T
Other languages
English (en)
Inventor
Kazumi Naito
Atsushi Shimojima
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27480751&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE343844(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP10355767A external-priority patent/JP2000182899A/ja
Priority claimed from JP36388398A external-priority patent/JP4263795B2/ja
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE343844T1 publication Critical patent/ATE343844T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Powder Metallurgy (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT99959774T 1998-12-15 1999-12-13 Niobkondensator und verfahren zu dessen herstellung ATE343844T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP10355767A JP2000182899A (ja) 1998-12-15 1998-12-15 コンデンサの製造方法
JP36388398A JP4263795B2 (ja) 1998-12-22 1998-12-22 コンデンサ
US11548699P 1999-01-11 1999-01-11
US11730699P 1999-01-26 1999-01-26

Publications (1)

Publication Number Publication Date
ATE343844T1 true ATE343844T1 (de) 2006-11-15

Family

ID=27480751

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99959774T ATE343844T1 (de) 1998-12-15 1999-12-13 Niobkondensator und verfahren zu dessen herstellung

Country Status (9)

Country Link
US (2) US6529367B1 (de)
EP (1) EP1158552B2 (de)
KR (1) KR100636563B1 (de)
CN (1) CN1201349C (de)
AT (1) ATE343844T1 (de)
AU (1) AU1684600A (de)
CA (1) CA2360789C (de)
DE (1) DE69933792T3 (de)
WO (1) WO2000036617A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051044A (en) 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
US6529367B1 (en) * 1998-12-15 2003-03-04 Showa Denko Kabushiki Kaisha Niobium capacitor and method of manufacture thereof
US6375704B1 (en) 1999-05-12 2002-04-23 Cabot Corporation High capacitance niobium powders and electrolytic capacitor anodes
BR0108905A (pt) 2000-03-01 2003-03-18 Cabot Corp Metais nitrificados para válvula e processos para fabricação dos mesmos
US7110244B2 (en) * 2001-04-12 2006-09-19 Showa Denko K.K. Production process for niobium capacitor
US7149074B2 (en) * 2001-04-19 2006-12-12 Cabot Corporation Methods of making a niobium metal oxide
EP1411151A4 (de) 2001-07-18 2007-06-06 Showa Denko Kk Metallfolie aus erdsäuremetall-legierung und damit versehener kondensator
JP3971266B2 (ja) * 2002-08-02 2007-09-05 ローム株式会社 Ｎｂコンデンサおよびこれの製造方法
JP2004143477A (ja) * 2002-10-22 2004-05-20 Cabot Supermetal Kk ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ
JP2004265951A (ja) * 2003-02-25 2004-09-24 Sanyo Electric Co Ltd 固体電解コンデンサ
US7655214B2 (en) * 2003-02-26 2010-02-02 Cabot Corporation Phase formation of oxygen reduced valve metal oxides and granulation methods
JP4131709B2 (ja) * 2003-03-28 2008-08-13 三洋電機株式会社 固体電解コンデンサの製造方法
EP2455340A1 (de) * 2003-05-19 2012-05-23 Cabot Corporation Ventil-metall suboxidpulver sowie daraus hergestellte kondensatoren und gesintertes anodematerial
US7142409B2 (en) * 2003-07-28 2006-11-28 Cabot Corporation Nitrided valve metal material and method of making same
JP4383228B2 (ja) * 2004-03-31 2009-12-16 三洋電機株式会社 固体電解コンデンサ
JP4804235B2 (ja) * 2005-08-29 2011-11-02 三洋電機株式会社 固体電解コンデンサ素子、その製造方法および固体電解コンデンサ
US20080272421A1 (en) * 2007-05-02 2008-11-06 Micron Technology, Inc. Methods, constructions, and devices including tantalum oxide layers
KR101036032B1 (ko) * 2008-08-06 2011-05-19 신재혁 출입문의 급속 닫힘 방지용 안전장치
US8107218B2 (en) * 2009-06-02 2012-01-31 Micron Technology, Inc. Capacitors
CN113168966B (zh) * 2018-11-29 2024-01-16 京瓷Avx元器件公司 含有顺序气相沉积的电介质膜的固体电解电容器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1219748A (en) 1969-06-13 1971-01-20 Standard Telephones Cables Ltd Producing niobium or tantalum powder
JPS5647687B2 (de) 1971-11-17 1981-11-11
JPS5383064A (en) 1976-12-28 1978-07-22 Fujitsu Ltd Method of making electrolytic capacitor
US4084965A (en) 1977-01-05 1978-04-18 Fansteel Inc. Columbium powder and method of making the same
JPS60121207A (ja) 1983-12-01 1985-06-28 Toyo Soda Mfg Co Ltd 超微粒子の製造方法
JPH01167206A (ja) * 1987-12-22 1989-06-30 Kobe Steel Ltd ニオブ窒化物の製造方法
DE3820960A1 (de) 1988-06-22 1989-12-28 Starck Hermann C Fa Feinkoernige hochreine erdsaeuremetallpulver, verfahren zu ihrer herstellung sowie deren verwendung
JPH03150822A (ja) 1989-11-07 1991-06-27 Nippon Chemicon Corp 電解コンデンサ用アルミニウム電極
JPH059710A (ja) 1991-07-02 1993-01-19 Nippon Chemicon Corp 電解コンデンサ用アルミニウム電極の製造方法
JP3106559B2 (ja) 1991-07-05 2000-11-06 日本ケミコン株式会社 表面に金属酸化物を有する基材の製造方法
JPH0653088A (ja) 1992-08-03 1994-02-25 Toyo Alum Kk 電解コンデンサ用アルミニウム電極とその製造方法
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
JP3150822B2 (ja) 1993-04-30 2001-03-26 オークマ株式会社 リニアモータ
US6165623A (en) 1996-11-07 2000-12-26 Cabot Corporation Niobium powders and niobium electrolytic capacitors
JP3254163B2 (ja) 1997-02-28 2002-02-04 昭和電工株式会社 コンデンサ
US6529367B1 (en) * 1998-12-15 2003-03-04 Showa Denko Kabushiki Kaisha Niobium capacitor and method of manufacture thereof

Also Published As

Publication number Publication date
US6529367B1 (en) 2003-03-04
CN1334957A (zh) 2002-02-06
EP1158552A1 (de) 2001-11-28
KR100636563B1 (ko) 2006-10-19
DE69933792T3 (de) 2012-09-27
DE69933792D1 (de) 2006-12-07
AU1684600A (en) 2000-07-03
EP1158552A4 (de) 2005-08-17
CN1201349C (zh) 2005-05-11
CA2360789C (en) 2008-03-18
EP1158552B2 (de) 2011-05-18
WO2000036617A1 (en) 2000-06-22
KR20010080767A (ko) 2001-08-22
DE69933792T2 (de) 2007-09-13
EP1158552B1 (de) 2006-10-25
US6661646B2 (en) 2003-12-09
US20030147203A1 (en) 2003-08-07
CA2360789A1 (en) 2000-06-22

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