ATE353108T1 - Bordotierte diamant und verfahren zu ihrer herstellung - Google Patents

Bordotierte diamant und verfahren zu ihrer herstellung

Info

Publication number
ATE353108T1
ATE353108T1 AT02790571T AT02790571T ATE353108T1 AT E353108 T1 ATE353108 T1 AT E353108T1 AT 02790571 T AT02790571 T AT 02790571T AT 02790571 T AT02790571 T AT 02790571T AT E353108 T1 ATE353108 T1 AT E353108T1
Authority
AT
Austria
Prior art keywords
board
production
doped diamonds
layer
diamonds
Prior art date
Application number
AT02790571T
Other languages
English (en)
Inventor
Geoffrey Alan Scarsbrook
Philip Maurice Martineau
Daniel James Twitchen
Andrew John Whitehead
Michael Andrew Cooper
Baerbel Susanne Charlotte Dorn
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Application granted granted Critical
Publication of ATE353108T1 publication Critical patent/ATE353108T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
AT02790571T 2001-12-14 2002-12-13 Bordotierte diamant und verfahren zu ihrer herstellung ATE353108T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0130005.2A GB0130005D0 (en) 2001-12-14 2001-12-14 Boron doped diamond

Publications (1)

Publication Number Publication Date
ATE353108T1 true ATE353108T1 (de) 2007-02-15

Family

ID=9927671

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02790571T ATE353108T1 (de) 2001-12-14 2002-12-13 Bordotierte diamant und verfahren zu ihrer herstellung

Country Status (15)

Country Link
US (2) US7160617B2 (de)
EP (2) EP1463849B1 (de)
JP (2) JP5101792B2 (de)
KR (1) KR100847969B1 (de)
CN (1) CN1321227C (de)
AT (1) ATE353108T1 (de)
AU (1) AU2002366413A1 (de)
CA (1) CA2469150C (de)
DE (1) DE60217976T2 (de)
ES (1) ES2279897T3 (de)
GB (2) GB0130005D0 (de)
IL (2) IL162354A0 (de)
RU (1) RU2315826C2 (de)
WO (1) WO2003052174A2 (de)
ZA (1) ZA200404371B (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
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EP1290251B8 (de) * 2000-06-15 2006-02-01 Element Six (PTY) Ltd Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
CZ302228B6 (cs) 2000-06-15 2011-01-05 Element Six (Pty) Ltd Monokrystalická diamantová vrstva pripravená chemickým vylucováním z plynné fáze
DE10153310A1 (de) * 2001-10-29 2003-05-22 Infineon Technologies Ag Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
RU2328563C2 (ru) * 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR101240785B1 (ko) * 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
WO2005061400A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in cvd diamond
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US20100297391A1 (en) * 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US9470485B1 (en) 2004-03-29 2016-10-18 Victor B. Kley Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
US8242511B2 (en) * 2005-06-20 2012-08-14 Nippon Telegraph And Telephone Corporation Field effect transistor using diamond and process for producing the same
GB0512728D0 (en) * 2005-06-22 2005-07-27 Element Six Ltd High colour diamond
AU2006260656A1 (en) * 2005-06-22 2006-12-28 Element Six Limited High colour diamond layer
GB0513932D0 (en) 2005-07-08 2005-08-17 Element Six Ltd Single crystal diamond elements having spherical surfaces
US20070036896A1 (en) * 2005-08-09 2007-02-15 Chien-Min Sung Mosaic diamond substrates
US20090127565A1 (en) * 2005-08-09 2009-05-21 Chien-Min Sung P-n junctions on mosaic diamond substrates
US9133566B2 (en) 2005-12-09 2015-09-15 Element Six Technologies Limited High crystalline quality synthetic diamond
CN100390316C (zh) * 2006-01-19 2008-05-28 上海电机学院 n型CVD共掺杂金刚石薄膜的制备方法
JP5503287B2 (ja) * 2006-09-05 2014-05-28 エレメント シックス リミテッド 固体電極
US7833581B2 (en) * 2006-09-11 2010-11-16 The Hong Kong University Of Science And Technology Method for making a highly stable diamond film on a substrate
GB0622482D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Diamond electrode
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GB0700984D0 (en) 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
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TWI457475B (zh) * 2008-05-05 2014-10-21 Carnegie Inst Of Washington 超韌性單晶型摻硼鑽石
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
AU2009324921A1 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal CVD diamond rapid growth rate
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material
JP5891564B2 (ja) * 2009-06-26 2016-03-23 エレメント シックス リミテッド ファンシーな淡い青色又はファンシーな淡い青色／緑色の単結晶ｃｖｄダイヤモンドの製造方法及び得られた製品
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
KR101481928B1 (ko) 2010-12-23 2015-01-21 엘리멘트 식스 리미티드 합성 다이아몬드 물질의 도핑을 제어하는 방법
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201104579D0 (en) * 2011-03-18 2011-05-04 Element Six Ltd Diamond based electrochemical sensors
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
GB201216697D0 (en) 2012-09-19 2012-10-31 Element Six Ltd Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
US9921017B1 (en) 2013-03-15 2018-03-20 Victor B. Kley User identification for weapons and site sensing fire control
GB201320304D0 (en) 2013-11-18 2014-01-01 Element Six Ltd Methods of fabricating synthetic diamond materials using microwave plasma actived chemical vapour deposition techniques and products obtained using said
CN103938182B (zh) * 2014-04-08 2016-05-04 上海交通大学 硼氮共掺纳米基定向金刚石薄膜的制备方法
WO2015199180A1 (ja) 2014-06-25 2015-12-30 住友電気工業株式会社 ダイヤモンド基板の製造方法、ダイヤモンド基板、及び、ダイヤモンド複合基板
JP6636239B2 (ja) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
JP6594889B2 (ja) * 2014-10-29 2019-10-23 住友電気工業株式会社 単結晶ダイヤモンド材料、ならびにそれを含む工具、放射温度モニター、および赤外光学部品
JP2017010967A (ja) * 2015-06-16 2017-01-12 株式会社Flosfia 成膜方法
KR20170027112A (ko) 2015-09-01 2017-03-09 장상구 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
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GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
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WO2022210934A1 (ja) * 2021-03-31 2022-10-06 住友電気工業株式会社 単結晶ダイヤモンド及びその製造方法
AT525593B1 (de) * 2021-10-22 2024-07-15 Carboncompetence Gmbh Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten
CN116203720B (zh) * 2021-12-01 2026-02-24 港大科桥有限公司 用于使用金刚石的颜色空间相关的拉曼光谱的防伪系统的方法和设备
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Also Published As

Publication number Publication date
JP2010222252A (ja) 2010-10-07
ES2279897T3 (es) 2007-09-01
WO2003052174A3 (en) 2003-10-02
GB2400116B (en) 2005-06-22
JP5101792B2 (ja) 2012-12-19
EP1780315B1 (de) 2015-04-15
EP1780315A3 (de) 2010-02-24
CA2469150A1 (en) 2003-06-26
GB0130005D0 (en) 2002-02-06
KR100847969B1 (ko) 2008-07-22
IL162354A (en) 2009-09-22
KR20040077674A (ko) 2004-09-06
RU2004121782A (ru) 2005-06-10
ZA200404371B (en) 2005-06-03
CN1612955A (zh) 2005-05-04
US20040180205A1 (en) 2004-09-16
HK1076644A1 (en) 2006-01-20
GB2400116A (en) 2004-10-06
AU2002366413A1 (en) 2003-06-30
CA2469150C (en) 2009-09-15
IL162354A0 (en) 2005-11-20
GB0415787D0 (en) 2004-08-18
EP1780315A2 (de) 2007-05-02
JP2005512928A (ja) 2005-05-12
EP1463849A2 (de) 2004-10-06
DE60217976T2 (de) 2007-05-24
RU2315826C2 (ru) 2008-01-27
WO2003052174A2 (en) 2003-06-26
EP1463849B1 (de) 2007-01-31
US7160617B2 (en) 2007-01-09
DE60217976D1 (de) 2007-03-22
CN1321227C (zh) 2007-06-13
US20070092647A1 (en) 2007-04-26

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