IL162354A0 - Boron doped diamond - Google Patents

Boron doped diamond

Info

Publication number
IL162354A0
IL162354A0 IL16235402A IL16235402A IL162354A0 IL 162354 A0 IL162354 A0 IL 162354A0 IL 16235402 A IL16235402 A IL 16235402A IL 16235402 A IL16235402 A IL 16235402A IL 162354 A0 IL162354 A0 IL 162354A0
Authority
IL
Israel
Prior art keywords
doped diamond
boron doped
layer
exceeding
cvd
Prior art date
Application number
IL16235402A
Other languages
English (en)
Original Assignee
Element Six Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Ltd filed Critical Element Six Ltd
Publication of IL162354A0 publication Critical patent/IL162354A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Respiratory Apparatuses And Protective Means (AREA)
IL16235402A 2001-12-14 2002-12-13 Boron doped diamond IL162354A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0130005.2A GB0130005D0 (en) 2001-12-14 2001-12-14 Boron doped diamond
PCT/IB2002/005324 WO2003052174A2 (en) 2001-12-14 2002-12-13 Boron doped diamond

Publications (1)

Publication Number Publication Date
IL162354A0 true IL162354A0 (en) 2005-11-20

Family

ID=9927671

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16235402A IL162354A0 (en) 2001-12-14 2002-12-13 Boron doped diamond
IL162354A IL162354A (en) 2001-12-14 2004-06-03 A drugged diamond in Boron

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL162354A IL162354A (en) 2001-12-14 2004-06-03 A drugged diamond in Boron

Country Status (15)

Country Link
US (2) US7160617B2 (de)
EP (2) EP1463849B1 (de)
JP (2) JP5101792B2 (de)
KR (1) KR100847969B1 (de)
CN (1) CN1321227C (de)
AT (1) ATE353108T1 (de)
AU (1) AU2002366413A1 (de)
CA (1) CA2469150C (de)
DE (1) DE60217976T2 (de)
ES (1) ES2279897T3 (de)
GB (2) GB0130005D0 (de)
IL (2) IL162354A0 (de)
RU (1) RU2315826C2 (de)
WO (1) WO2003052174A2 (de)
ZA (1) ZA200404371B (de)

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GB2379451B (en) * 2000-06-15 2004-05-05 Element Six Thick single crystal diamond layer method for making it and gemstones produced from the layer
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GB0130005D0 (en) 2001-12-14 2002-02-06 Diamanx Products Ltd Boron doped diamond
GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
EP2253746B1 (de) * 2002-09-06 2015-07-22 Element Six Technologies Limited Gefärbter diamant
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
KR101240785B1 (ko) * 2003-12-12 2013-03-07 엘리멘트 식스 리미티드 화학적 증착 다이아몬드에 마크를 통합시키는 방법
AU2004303615A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in CVD diamond
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US9470485B1 (en) 2004-03-29 2016-10-18 Victor B. Kley Molded plastic cartridge with extended flash tube, sub-sonic cartridges, and user identification for firearms and site sensing fire control
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
EP2790207B1 (de) * 2005-06-20 2016-01-06 Nippon Telegraph And Telephone Corporation Diamantenhalbleiterelement und Verfahren zu dessen Herstellung
GB0512728D0 (en) * 2005-06-22 2005-07-27 Element Six Ltd High colour diamond
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GB0622482D0 (en) 2006-11-10 2006-12-20 Element Six Ltd Diamond electrode
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GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
US9255009B2 (en) * 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material
EP2446070B1 (de) * 2009-06-26 2018-08-08 Element Six Technologies Limited Verfahren zur herstellung eines extravaganten blassblauen oder blassblau/grünen cvd-einkristalldiamants und gewonnenes produkt
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
US8997900B2 (en) 2010-12-15 2015-04-07 National Oilwell DHT, L.P. In-situ boron doped PDC element
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
JP5913362B2 (ja) * 2010-12-23 2016-04-27 エレメント シックス リミテッド 合成ダイヤモンド材料のドーピングの制御
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201104579D0 (en) * 2011-03-18 2011-05-04 Element Six Ltd Diamond based electrochemical sensors
GB201121642D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
GB201216697D0 (en) 2012-09-19 2012-10-31 Element Six Ltd Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
US9921017B1 (en) 2013-03-15 2018-03-20 Victor B. Kley User identification for weapons and site sensing fire control
GB201320304D0 (en) 2013-11-18 2014-01-01 Element Six Ltd Methods of fabricating synthetic diamond materials using microwave plasma actived chemical vapour deposition techniques and products obtained using said
CN103938182B (zh) * 2014-04-08 2016-05-04 上海交通大学 硼氮共掺纳米基定向金刚石薄膜的制备方法
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JP6636239B2 (ja) * 2014-08-29 2020-01-29 国立大学法人電気通信大学 単結晶ダイヤモンドの製造方法、単結晶ダイヤモンド、単結晶ダイヤモンド基板の製造方法、単結晶ダイヤモンド基板及び半導体デバイス
EP3214208B1 (de) * 2014-10-29 2021-08-04 Sumitomo Electric Industries, Ltd. Einkristallines diamantmaterial und werkzeug, strahlungstemperaturmonitor und infrarot- und optische komponente mit besagtem diamantmaterial
JP2017010967A (ja) * 2015-06-16 2017-01-12 株式会社Flosfia 成膜方法
KR20170027112A (ko) 2015-09-01 2017-03-09 장상구 3차원 기공성 나노 다이아몬드를 담체로 하는 촉매의 제조방법
GB201516814D0 (en) 2015-09-23 2015-11-04 Element Six Technologies Ltd Method of fabricating a plurality of single crystal CVD synthetic diamonds
CN108602699B (zh) 2016-02-05 2021-04-27 西门子能源美国公司 在升高的压力下的电氧化
GB201620413D0 (en) 2016-12-01 2017-01-18 Element Six Tech Ltd Single crystal synthetic diamond material via chemical vapour deposition
US12215438B2 (en) * 2017-09-19 2025-02-04 Sumitomo Electric Industries, Ltd. Single-crystal diamond and method of manufacturing the same
US20240175167A1 (en) * 2021-03-31 2024-05-30 Sumitomo Electric Industries, Ltd. Single-crystal diamond and method of manufacturing the same
AT525593B1 (de) * 2021-10-22 2024-07-15 Carboncompetence Gmbh Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten
US12467871B2 (en) * 2021-12-01 2025-11-11 Versitech Limited Methods and apparatus for an anti- counterfeiting system using color space correlated raman spectroscopy of diamond
US12160533B2 (en) * 2022-04-20 2024-12-03 EllansaLabs Inc. System and method for etching internal surfaces of transparent gemstones with information pertaining to a blockchain
WO2023063996A1 (en) * 2022-04-20 2023-04-20 EllansaLabs Inc. System and method for etching internal surfaces of transparent gemstones with information pertaining to a blockchain
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用
CN115261984A (zh) * 2022-09-29 2022-11-01 北京芯美达科技有限公司 一种单晶金刚石晶格外延补偿方法
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GB0130004D0 (en) * 2001-12-14 2002-02-06 Diamanx Products Ltd Coloured diamond
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Also Published As

Publication number Publication date
RU2004121782A (ru) 2005-06-10
CA2469150A1 (en) 2003-06-26
JP2010222252A (ja) 2010-10-07
KR100847969B1 (ko) 2008-07-22
KR20040077674A (ko) 2004-09-06
EP1780315A2 (de) 2007-05-02
JP2005512928A (ja) 2005-05-12
IL162354A (en) 2009-09-22
EP1463849B1 (de) 2007-01-31
GB0130005D0 (en) 2002-02-06
EP1780315A3 (de) 2010-02-24
US20040180205A1 (en) 2004-09-16
CN1612955A (zh) 2005-05-04
EP1780315B1 (de) 2015-04-15
JP5101792B2 (ja) 2012-12-19
RU2315826C2 (ru) 2008-01-27
CA2469150C (en) 2009-09-15
DE60217976T2 (de) 2007-05-24
EP1463849A2 (de) 2004-10-06
GB2400116A (en) 2004-10-06
CN1321227C (zh) 2007-06-13
ES2279897T3 (es) 2007-09-01
GB2400116B (en) 2005-06-22
AU2002366413A1 (en) 2003-06-30
ATE353108T1 (de) 2007-02-15
GB0415787D0 (en) 2004-08-18
HK1076644A1 (en) 2006-01-20
US20070092647A1 (en) 2007-04-26
US7160617B2 (en) 2007-01-09
ZA200404371B (en) 2005-06-03
WO2003052174A2 (en) 2003-06-26
WO2003052174A3 (en) 2003-10-02
DE60217976D1 (de) 2007-03-22

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