ATE354851T1 - Verfahren zur herstellung einer ferroelektrischen speicherzelle in einem ferroelektrischen speicherbaustein und ferroelektrischer speicherbaustein - Google Patents

Verfahren zur herstellung einer ferroelektrischen speicherzelle in einem ferroelektrischen speicherbaustein und ferroelektrischer speicherbaustein

Info

Publication number
ATE354851T1
ATE354851T1 AT03760179T AT03760179T ATE354851T1 AT E354851 T1 ATE354851 T1 AT E354851T1 AT 03760179 T AT03760179 T AT 03760179T AT 03760179 T AT03760179 T AT 03760179T AT E354851 T1 ATE354851 T1 AT E354851T1
Authority
AT
Austria
Prior art keywords
ferroelectric
layer
electrode
ferroelectric storage
electrodes
Prior art date
Application number
AT03760179T
Other languages
English (en)
Inventor
Henrik Ljungcrantz
Niclas Edvardsson
Johan Carlsson
Goeran Gustafsson
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE354851T1 publication Critical patent/ATE354851T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
AT03760179T 2002-06-18 2003-06-16 Verfahren zur herstellung einer ferroelektrischen speicherzelle in einem ferroelektrischen speicherbaustein und ferroelektrischer speicherbaustein ATE354851T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20022910A NO322192B1 (no) 2002-06-18 2002-06-18 Fremgangsmate til fremstilling av elektrodelag av ferroelektriske minneceller i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning

Publications (1)

Publication Number Publication Date
ATE354851T1 true ATE354851T1 (de) 2007-03-15

Family

ID=19913735

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03760179T ATE354851T1 (de) 2002-06-18 2003-06-16 Verfahren zur herstellung einer ferroelektrischen speicherzelle in einem ferroelektrischen speicherbaustein und ferroelektrischer speicherbaustein

Country Status (11)

Country Link
US (2) US20040209420A1 (de)
EP (1) EP1550133B1 (de)
JP (1) JP2006510193A (de)
CN (1) CN1662994A (de)
AT (1) ATE354851T1 (de)
AU (1) AU2003263671A1 (de)
CA (1) CA2488829A1 (de)
DE (1) DE60312014D1 (de)
NO (1) NO322192B1 (de)
RU (1) RU2281567C2 (de)
WO (1) WO2003107351A1 (de)

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Also Published As

Publication number Publication date
JP2006510193A (ja) 2006-03-23
CA2488829A1 (en) 2003-12-24
NO322192B1 (no) 2006-08-28
WO2003107351A1 (en) 2003-12-24
AU2003263671A1 (en) 2003-12-31
NO20022910D0 (no) 2002-06-18
EP1550133A1 (de) 2005-07-06
NO20022910L (no) 2003-12-19
RU2281567C2 (ru) 2006-08-10
US20040209420A1 (en) 2004-10-21
DE60312014D1 (de) 2007-04-05
RU2005100834A (ru) 2005-07-10
CN1662994A (zh) 2005-08-31
EP1550133B1 (de) 2007-02-21
US20060073658A1 (en) 2006-04-06

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