ATE368302T1 - Solarzelle mit rückseite-kontakt und herstellungsverfahren dazu - Google Patents

Solarzelle mit rückseite-kontakt und herstellungsverfahren dazu

Info

Publication number
ATE368302T1
ATE368302T1 AT02787830T AT02787830T ATE368302T1 AT E368302 T1 ATE368302 T1 AT E368302T1 AT 02787830 T AT02787830 T AT 02787830T AT 02787830 T AT02787830 T AT 02787830T AT E368302 T1 ATE368302 T1 AT E368302T1
Authority
AT
Austria
Prior art keywords
solar cell
doping
diffusion zone
production process
back contact
Prior art date
Application number
AT02787830T
Other languages
English (en)
Inventor
Adolf Muenzer
Original Assignee
Shell Solar Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shell Solar Gmbh filed Critical Shell Solar Gmbh
Application granted granted Critical
Publication of ATE368302T1 publication Critical patent/ATE368302T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AT02787830T 2001-11-26 2002-11-26 Solarzelle mit rückseite-kontakt und herstellungsverfahren dazu ATE368302T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10157960 2001-11-26

Publications (1)

Publication Number Publication Date
ATE368302T1 true ATE368302T1 (de) 2007-08-15

Family

ID=7707011

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02787830T ATE368302T1 (de) 2001-11-26 2002-11-26 Solarzelle mit rückseite-kontakt und herstellungsverfahren dazu

Country Status (9)

Country Link
US (1) US7217883B2 (de)
EP (1) EP1449261B1 (de)
JP (1) JP2005510885A (de)
CN (1) CN100401532C (de)
AT (1) ATE368302T1 (de)
AU (1) AU2002352156B2 (de)
DE (1) DE60221426T2 (de)
ES (1) ES2289168T3 (de)
WO (1) WO2003047005A2 (de)

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US7820532B2 (en) * 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
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US8298850B2 (en) * 2009-05-01 2012-10-30 Silicor Materials Inc. Bifacial solar cells with overlaid back grid surface
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JP5627243B2 (ja) * 2010-01-28 2014-11-19 三洋電機株式会社 太陽電池及び太陽電池の製造方法
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US10396229B2 (en) * 2011-05-09 2019-08-27 International Business Machines Corporation Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal
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WO2013054396A1 (ja) * 2011-10-11 2013-04-18 三菱電機株式会社 光起電力装置の製造方法および光起電力装置
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JP2014056875A (ja) * 2012-09-11 2014-03-27 Sharp Corp 光電変換素子および光電変換素子の製造方法
JP2014078618A (ja) * 2012-10-11 2014-05-01 Sharp Corp 光電変換素子および光電変換素子の製造方法
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9472702B1 (en) 2012-11-19 2016-10-18 Sandia Corporation Photovoltaic cell with nano-patterned substrate
US9035172B2 (en) 2012-11-26 2015-05-19 Sunpower Corporation Crack resistant solar cell modules
US9312406B2 (en) 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
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Also Published As

Publication number Publication date
US7217883B2 (en) 2007-05-15
ES2289168T3 (es) 2008-02-01
EP1449261A2 (de) 2004-08-25
EP1449261B1 (de) 2007-07-25
DE60221426T2 (de) 2007-11-29
CN1592972A (zh) 2005-03-09
AU2002352156B2 (en) 2007-08-09
JP2005510885A (ja) 2005-04-21
AU2002352156A1 (en) 2003-06-10
WO2003047005A3 (en) 2004-02-19
US20050016585A1 (en) 2005-01-27
DE60221426D1 (de) 2007-09-06
WO2003047005A2 (en) 2003-06-05
CN100401532C (zh) 2008-07-09

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