ATE371250T1 - Programmierung mit verstärktem substrat/tub für flash-speicher - Google Patents

Programmierung mit verstärktem substrat/tub für flash-speicher

Info

Publication number
ATE371250T1
ATE371250T1 AT04784015T AT04784015T ATE371250T1 AT E371250 T1 ATE371250 T1 AT E371250T1 AT 04784015 T AT04784015 T AT 04784015T AT 04784015 T AT04784015 T AT 04784015T AT E371250 T1 ATE371250 T1 AT E371250T1
Authority
AT
Austria
Prior art keywords
tub
substrate
floating gate
programming
gate memory
Prior art date
Application number
AT04784015T
Other languages
English (en)
Inventor
Hagop Nazarian
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE371250T1 publication Critical patent/ATE371250T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Saccharide Compounds (AREA)
AT04784015T 2003-09-16 2004-09-14 Programmierung mit verstärktem substrat/tub für flash-speicher ATE371250T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/663,277 US6977842B2 (en) 2003-09-16 2003-09-16 Boosted substrate/tub programming for flash memories

Publications (1)

Publication Number Publication Date
ATE371250T1 true ATE371250T1 (de) 2007-09-15

Family

ID=34274335

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04784015T ATE371250T1 (de) 2003-09-16 2004-09-14 Programmierung mit verstärktem substrat/tub für flash-speicher

Country Status (9)

Country Link
US (2) US6977842B2 (de)
EP (1) EP1665281B1 (de)
JP (1) JP4417383B2 (de)
KR (1) KR100769795B1 (de)
CN (1) CN100479063C (de)
AT (1) ATE371250T1 (de)
DE (1) DE602004008490T2 (de)
SG (1) SG146620A1 (de)
WO (1) WO2005029501A1 (de)

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CN112201295B (zh) * 2020-09-11 2021-09-17 中天弘宇集成电路有限责任公司 Nand闪存编程方法
CN112365913B (zh) * 2020-09-29 2021-09-03 中天弘宇集成电路有限责任公司 3d nand闪存编程方法
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Also Published As

Publication number Publication date
KR100769795B1 (ko) 2007-10-25
EP1665281A1 (de) 2006-06-07
DE602004008490D1 (de) 2007-10-04
US7149124B2 (en) 2006-12-12
US6977842B2 (en) 2005-12-20
DE602004008490T2 (de) 2008-05-15
EP1665281B1 (de) 2007-08-22
CN100479063C (zh) 2009-04-15
WO2005029501A1 (en) 2005-03-31
KR20060053000A (ko) 2006-05-19
US20050057966A1 (en) 2005-03-17
JP2007506207A (ja) 2007-03-15
US20050111260A1 (en) 2005-05-26
CN1849670A (zh) 2006-10-18
JP4417383B2 (ja) 2010-02-17
SG146620A1 (en) 2008-10-30

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