ATE508460T1 - Selbst-boost-system für flash-speicherzellen - Google Patents

Selbst-boost-system für flash-speicherzellen

Info

Publication number
ATE508460T1
ATE508460T1 AT05711788T AT05711788T ATE508460T1 AT E508460 T1 ATE508460 T1 AT E508460T1 AT 05711788 T AT05711788 T AT 05711788T AT 05711788 T AT05711788 T AT 05711788T AT E508460 T1 ATE508460 T1 AT E508460T1
Authority
AT
Austria
Prior art keywords
word line
self boosting
band
reduce
word lines
Prior art date
Application number
AT05711788T
Other languages
English (en)
Inventor
Gerrit Jan Hemink
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE508460T1 publication Critical patent/ATE508460T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT05711788T 2004-02-06 2005-01-20 Selbst-boost-system für flash-speicherzellen ATE508460T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/774,014 US7161833B2 (en) 2004-02-06 2004-02-06 Self-boosting system for flash memory cells
PCT/US2005/001962 WO2005078733A2 (en) 2004-02-06 2005-01-20 Self-boosting system for flash memory cells

Publications (1)

Publication Number Publication Date
ATE508460T1 true ATE508460T1 (de) 2011-05-15

Family

ID=34826888

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05711788T ATE508460T1 (de) 2004-02-06 2005-01-20 Selbst-boost-system für flash-speicherzellen

Country Status (9)

Country Link
US (3) US7161833B2 (de)
EP (2) EP1714291B1 (de)
JP (2) JP4819702B2 (de)
KR (1) KR101161152B1 (de)
CN (1) CN100555453C (de)
AT (1) ATE508460T1 (de)
DE (1) DE602005027810D1 (de)
TW (1) TWI328228B (de)
WO (1) WO2005078733A2 (de)

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US20070081384A1 (en) 2007-04-12
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