ATE371956T1 - Halbleiterbauelemente und ihr peripherieabschluss - Google Patents
Halbleiterbauelemente und ihr peripherieabschlussInfo
- Publication number
- ATE371956T1 ATE371956T1 AT02711147T AT02711147T ATE371956T1 AT E371956 T1 ATE371956 T1 AT E371956T1 AT 02711147 T AT02711147 T AT 02711147T AT 02711147 T AT02711147 T AT 02711147T AT E371956 T1 ATE371956 T1 AT E371956T1
- Authority
- AT
- Austria
- Prior art keywords
- voltage
- peripheral area
- peripheral
- sustaining zone
- regions
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Electrotherapy Devices (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Small-Scale Networks (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0103715.9A GB0103715D0 (en) | 2001-02-15 | 2001-02-15 | Semicondutor devices and their peripheral termination |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE371956T1 true ATE371956T1 (de) | 2007-09-15 |
Family
ID=9908785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02711147T ATE371956T1 (de) | 2001-02-15 | 2002-02-13 | Halbleiterbauelemente und ihr peripherieabschluss |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6724021B2 (de) |
| EP (1) | EP1364410B1 (de) |
| JP (1) | JP2004519103A (de) |
| KR (1) | KR100847991B1 (de) |
| AT (1) | ATE371956T1 (de) |
| DE (1) | DE60222094T2 (de) |
| GB (1) | GB0103715D0 (de) |
| WO (1) | WO2002065552A2 (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0214618D0 (en) * | 2002-06-25 | 2002-08-07 | Koninkl Philips Electronics Nv | Semiconductor device with edge structure |
| US6900523B2 (en) * | 2002-07-03 | 2005-05-31 | International Rectifier Corporation | Termination structure for MOSgated power devices |
| US6987305B2 (en) * | 2003-08-04 | 2006-01-17 | International Rectifier Corporation | Integrated FET and schottky device |
| GB0407363D0 (en) * | 2004-03-31 | 2004-05-05 | Koninkl Philips Electronics Nv | Trench semiconductor device and method of manufacturing it |
| CN101180739B (zh) * | 2005-05-24 | 2010-11-17 | Nxp股份有限公司 | 具有边缘末端的半导体器件 |
| WO2007066037A1 (fr) * | 2005-12-06 | 2007-06-14 | Stmicroelectronics Sa | Resistance dans un circuit integre |
| US8080848B2 (en) * | 2006-05-11 | 2011-12-20 | Fairchild Semiconductor Corporation | High voltage semiconductor device with lateral series capacitive structure |
| CN100544028C (zh) * | 2006-09-19 | 2009-09-23 | 电子科技大学 | 利用场板达到最佳表面横向通量的横向高压器件 |
| US7564099B2 (en) * | 2007-03-12 | 2009-07-21 | International Rectifier Corporation | Monolithic MOSFET and Schottky diode device |
| JP5049744B2 (ja) * | 2007-11-05 | 2012-10-17 | 株式会社日立製作所 | 配線基板の製造方法およびその配線基板 |
| JP5531620B2 (ja) * | 2010-01-05 | 2014-06-25 | 富士電機株式会社 | 半導体装置 |
| US8502346B2 (en) * | 2010-12-23 | 2013-08-06 | Alpha And Omega Semiconductor Incorporated | Monolithic IGBT and diode structure for quasi-resonant converters |
| KR101248669B1 (ko) * | 2011-08-01 | 2013-04-03 | 주식회사 케이이씨 | 전력 반도체 소자 |
| KR101248664B1 (ko) * | 2011-08-01 | 2013-03-28 | 주식회사 케이이씨 | 전력 반도체 소자 |
| KR101279216B1 (ko) | 2011-08-17 | 2013-06-26 | 주식회사 케이이씨 | 반도체 장치의 제조 방법 |
| US8466492B1 (en) | 2012-01-31 | 2013-06-18 | Infineon Technologies Austria Ag | Semiconductor device with edge termination structure |
| CN103531628B (zh) * | 2012-07-02 | 2017-08-08 | 朱江 | 一种沟槽肖特基mos半导体装置 |
| CN103579371A (zh) * | 2012-07-27 | 2014-02-12 | 朱江 | 一种沟槽终端结构肖特基器件及其制备方法 |
| US11081554B2 (en) * | 2017-10-12 | 2021-08-03 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having trench termination structure and method |
| CN109166923B (zh) * | 2018-08-28 | 2021-03-30 | 电子科技大学 | 一种屏蔽栅mosfet |
| JP7510295B2 (ja) * | 2020-02-18 | 2024-07-03 | 株式会社東芝 | 半導体装置 |
| CN116799028A (zh) * | 2022-03-16 | 2023-09-22 | 华为数字能源技术有限公司 | 一种二极管和功率电路 |
| CN115295627B (zh) * | 2022-08-25 | 2023-09-05 | 中国电子科技集团公司第二十四研究所 | 高压功率半导体器件及其制造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2071411B (en) | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
| GB2089119A (en) | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US5430324A (en) * | 1992-07-23 | 1995-07-04 | Siliconix, Incorporated | High voltage transistor having edge termination utilizing trench technology |
| DE19638437C2 (de) * | 1996-09-19 | 2002-02-21 | Infineon Technologies Ag | Durch Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
| JP2000513877A (ja) * | 1997-04-28 | 2000-10-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 横形ｍｏｓトランジスタデバイス |
| JP3322852B2 (ja) * | 1998-06-26 | 2002-09-09 | 日清紡績株式会社 | 連続気泡硬質ポリウレタンフォーム成形体およびその製造方法 |
| GB9815021D0 (en) * | 1998-07-11 | 1998-09-09 | Koninkl Philips Electronics Nv | Semiconductor power device manufacture |
| DE19848828C2 (de) * | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit |
| US6452230B1 (en) * | 1998-12-23 | 2002-09-17 | International Rectifier Corporation | High voltage mosgated device with trenches to reduce on-resistance |
| JP4774580B2 (ja) * | 1999-08-23 | 2011-09-14 | 富士電機株式会社 | 超接合半導体素子 |
| GB0003186D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device |
| GB0003184D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device and a method of fabricating material for a semiconductor device |
| GB0003185D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | An insulated gate field effect device |
| JP4357753B2 (ja) * | 2001-01-26 | 2009-11-04 | 株式会社東芝 | 高耐圧半導体装置 |
-
2001
- 2001-02-15 GB GBGB0103715.9A patent/GB0103715D0/en not_active Ceased
-
2002
- 2002-02-05 US US10/067,205 patent/US6724021B2/en not_active Expired - Fee Related
- 2002-02-13 JP JP2002564766A patent/JP2004519103A/ja active Pending
- 2002-02-13 AT AT02711147T patent/ATE371956T1/de not_active IP Right Cessation
- 2002-02-13 DE DE60222094T patent/DE60222094T2/de not_active Expired - Lifetime
- 2002-02-13 EP EP02711147A patent/EP1364410B1/de not_active Expired - Lifetime
- 2002-02-13 WO PCT/IB2002/000431 patent/WO2002065552A2/en not_active Ceased
- 2002-02-13 KR KR1020027013774A patent/KR100847991B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1364410B1 (de) | 2007-08-29 |
| GB0103715D0 (en) | 2001-04-04 |
| KR100847991B1 (ko) | 2008-07-22 |
| KR20020092432A (ko) | 2002-12-11 |
| DE60222094D1 (de) | 2007-10-11 |
| WO2002065552A3 (en) | 2002-12-19 |
| DE60222094T2 (de) | 2008-05-21 |
| JP2004519103A (ja) | 2004-06-24 |
| WO2002065552A2 (en) | 2002-08-22 |
| EP1364410A2 (de) | 2003-11-26 |
| US6724021B2 (en) | 2004-04-20 |
| US20020134998A1 (en) | 2002-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |