ATE388489T1 - Feldeffekttransistor mit isoliertem graben-gate - Google Patents
Feldeffekttransistor mit isoliertem graben-gateInfo
- Publication number
- ATE388489T1 ATE388489T1 AT04799251T AT04799251T ATE388489T1 AT E388489 T1 ATE388489 T1 AT E388489T1 AT 04799251 T AT04799251 T AT 04799251T AT 04799251 T AT04799251 T AT 04799251T AT E388489 T1 ATE388489 T1 AT E388489T1
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- trench gate
- isolated trench
- sub
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/63—Vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0327791.0A GB0327791D0 (en) | 2003-11-29 | 2003-11-29 | Trench insulated gate field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE388489T1 true ATE388489T1 (de) | 2008-03-15 |
Family
ID=29798070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04799251T ATE388489T1 (de) | 2003-11-29 | 2004-11-26 | Feldeffekttransistor mit isoliertem graben-gate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7408223B2 (de) |
| EP (1) | EP1692725B1 (de) |
| JP (1) | JP2007512699A (de) |
| CN (1) | CN100459158C (de) |
| AT (1) | ATE388489T1 (de) |
| DE (1) | DE602004012311T2 (de) |
| GB (1) | GB0327791D0 (de) |
| WO (1) | WO2005053031A2 (de) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7786533B2 (en) * | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
| US6838722B2 (en) | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
| DE102005052734B4 (de) | 2005-10-06 | 2012-02-23 | Infineon Technologies Ag | Halbleiterstruktur, Verfahren zum Betreiben einer Halbleiterstruktur und Verfahren zum Herstellen einer Halbleiterstruktur |
| JP4817827B2 (ja) * | 2005-12-09 | 2011-11-16 | 株式会社東芝 | 半導体装置 |
| US7554153B2 (en) * | 2006-03-07 | 2009-06-30 | International Rectifier Corporation | Power semiconductor device |
| US8159024B2 (en) * | 2007-04-20 | 2012-04-17 | Rensselaer Polytechnic Institute | High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance |
| US8901638B2 (en) * | 2008-07-25 | 2014-12-02 | Nxp B.V. | Trench-gate semiconductor device |
| US8022470B2 (en) * | 2008-09-04 | 2011-09-20 | Infineon Technologies Austria Ag | Semiconductor device with a trench gate structure and method for the production thereof |
| US7851312B2 (en) | 2009-01-23 | 2010-12-14 | Semiconductor Components Industries, Llc | Semiconductor component and method of manufacture |
| US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
| US20120220092A1 (en) * | 2009-10-21 | 2012-08-30 | Vishay-Siliconix | Method of forming a hybrid split gate simiconductor |
| US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
| US8021947B2 (en) | 2009-12-09 | 2011-09-20 | Semiconductor Components Industries, Llc | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
| US8247296B2 (en) | 2009-12-09 | 2012-08-21 | Semiconductor Components Industries, Llc | Method of forming an insulated gate field effect transistor device having a shield electrode structure |
| EP2543072B1 (de) | 2010-03-02 | 2021-10-06 | Vishay-Siliconix | Strukturen und verfahren zur herstellung von doppelgate-vorrichtungen |
| JP5674530B2 (ja) * | 2010-09-10 | 2015-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の制御装置 |
| WO2012158977A2 (en) | 2011-05-18 | 2012-11-22 | Vishay-Siliconix | Semiconductor device |
| US9029215B2 (en) | 2012-05-14 | 2015-05-12 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device having a shield electrode structure |
| US8921184B2 (en) | 2012-05-14 | 2014-12-30 | Semiconductor Components Industries, Llc | Method of making an electrode contact structure and structure therefor |
| JP5802636B2 (ja) | 2012-09-18 | 2015-10-28 | 株式会社東芝 | 半導体装置およびその製造方法 |
| EP3183753B1 (de) | 2014-08-19 | 2025-03-19 | Vishay-Siliconix | Mosfet-halbleiteranordnung |
| US9564506B2 (en) | 2015-01-06 | 2017-02-07 | International Business Machines Corporation | Low end parasitic capacitance FinFET |
| CN105957893A (zh) * | 2016-05-26 | 2016-09-21 | 深圳尚阳通科技有限公司 | 屏蔽栅功率mosfet及其制造方法 |
| CN108010965A (zh) * | 2016-10-30 | 2018-05-08 | 朱江 | 一种沟槽mis半导体装置及其制造方法 |
| US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
| US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
| JP7394038B2 (ja) * | 2020-09-11 | 2023-12-07 | 株式会社東芝 | 半導体装置 |
| JP7481975B2 (ja) | 2020-09-16 | 2024-05-13 | 株式会社東芝 | 半導体装置 |
| CN112271134B (zh) * | 2020-10-20 | 2021-10-22 | 苏州东微半导体股份有限公司 | 半导体功率器件的制造方法 |
| EP4187617A4 (de) * | 2020-10-23 | 2024-02-14 | Nuvoton Technology Corporation Japan | Halbleiteranordnung |
| JP7849321B2 (ja) | 2023-03-22 | 2026-04-21 | 株式会社東芝 | 半導体装置およびその制御回路 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126807A (en) * | 1990-06-13 | 1992-06-30 | Kabushiki Kaisha Toshiba | Vertical MOS transistor and its production method |
| US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
| EP1166363B1 (de) * | 1999-03-01 | 2011-06-29 | GENERAL SEMICONDUCTOR, Inc. | Graben-dmos-transistorstruktur mit pfad mit niedrigem widerstand zu einem drainkontakt auf einer oberen oberfläche |
| DE10211543B4 (de) * | 2002-03-15 | 2005-06-30 | Infineon Technologies Ag | Schaltungsanordnung mit einem Feldeffekttransistor und Verfahren zum Betrieb der Schaltungsanordnung |
-
2003
- 2003-11-29 GB GBGB0327791.0A patent/GB0327791D0/en not_active Ceased
-
2004
- 2004-11-26 EP EP04799251A patent/EP1692725B1/de not_active Expired - Lifetime
- 2004-11-26 US US10/580,624 patent/US7408223B2/en not_active Expired - Lifetime
- 2004-11-26 CN CNB2004800352255A patent/CN100459158C/zh not_active Expired - Fee Related
- 2004-11-26 JP JP2006540761A patent/JP2007512699A/ja not_active Withdrawn
- 2004-11-26 DE DE602004012311T patent/DE602004012311T2/de not_active Expired - Lifetime
- 2004-11-26 AT AT04799251T patent/ATE388489T1/de not_active IP Right Cessation
- 2004-11-26 WO PCT/IB2004/052561 patent/WO2005053031A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005053031A3 (en) | 2005-08-25 |
| DE602004012311T2 (de) | 2009-03-19 |
| EP1692725B1 (de) | 2008-03-05 |
| GB0327791D0 (en) | 2003-12-31 |
| CN1886837A (zh) | 2006-12-27 |
| JP2007512699A (ja) | 2007-05-17 |
| EP1692725A2 (de) | 2006-08-23 |
| CN100459158C (zh) | 2009-02-04 |
| WO2005053031A2 (en) | 2005-06-09 |
| DE602004012311D1 (de) | 2008-04-17 |
| US20070132014A1 (en) | 2007-06-14 |
| US7408223B2 (en) | 2008-08-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |