ATE400067T1 - Organischer feldeffekttransistor und dessen herstellung - Google Patents

Organischer feldeffekttransistor und dessen herstellung

Info

Publication number
ATE400067T1
ATE400067T1 AT05790320T AT05790320T ATE400067T1 AT E400067 T1 ATE400067 T1 AT E400067T1 AT 05790320 T AT05790320 T AT 05790320T AT 05790320 T AT05790320 T AT 05790320T AT E400067 T1 ATE400067 T1 AT E400067T1
Authority
AT
Austria
Prior art keywords
production
field effect
effect transistor
organic field
osc
Prior art date
Application number
AT05790320T
Other languages
English (en)
Inventor
Beverley Brown
Janos Veres
Simon Dominic Ogier
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Application granted granted Critical
Publication of ATE400067T1 publication Critical patent/ATE400067T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Bipolar Transistors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT05790320T 2004-11-03 2005-10-04 Organischer feldeffekttransistor und dessen herstellung ATE400067T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0424342A GB0424342D0 (en) 2004-11-03 2004-11-03 Process and device

Publications (1)

Publication Number Publication Date
ATE400067T1 true ATE400067T1 (de) 2008-07-15

Family

ID=33523135

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05790320T ATE400067T1 (de) 2004-11-03 2005-10-04 Organischer feldeffekttransistor und dessen herstellung

Country Status (9)

Country Link
US (1) US7691665B2 (de)
EP (1) EP1807884B1 (de)
JP (2) JP5390098B2 (de)
KR (1) KR101332955B1 (de)
AT (1) ATE400067T1 (de)
DE (1) DE602005007926D1 (de)
GB (1) GB0424342D0 (de)
TW (1) TWI388076B (de)
WO (1) WO2006048092A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
JP5217224B2 (ja) * 2007-04-19 2013-06-19 凸版印刷株式会社 薄膜トランジスタの製造方法
CN102105987B (zh) * 2008-07-22 2013-04-03 Dic株式会社 有机晶体管及其制造方法
JP2013504186A (ja) * 2009-09-05 2013-02-04 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 有機電子装置用の溶液加工性パッシベーション層
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8212243B2 (en) 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
US8883546B2 (en) * 2010-09-02 2014-11-11 Merck Patent Gmbh Process for preparing an organic electronic device
JP5630364B2 (ja) 2011-04-11 2014-11-26 大日本印刷株式会社 有機半導体素子の製造方法および有機半導体素子
JP5598410B2 (ja) 2011-04-11 2014-10-01 大日本印刷株式会社 有機半導体素子の製造方法および有機半導体素子
JP2017017216A (ja) * 2015-07-02 2017-01-19 Dic株式会社 半導体組成物、半導体インク

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801512A (en) * 1980-03-11 1989-01-31 University Patents, Inc. Reversible electrochemical doping of conjugated polymers and secondary batteries based thereon
JPH07147409A (ja) * 1993-11-25 1995-06-06 Toshiba Corp 電界効果型素子
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
ATE549753T1 (de) * 1999-07-21 2012-03-15 E Ink Corp Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungen
JP4972260B2 (ja) * 1999-08-31 2012-07-11 イー インク コーポレイション パターニングされた半導体膜を形成する方法
JP3592226B2 (ja) * 2000-10-06 2004-11-24 松下電器産業株式会社 機能性有機薄膜の製造方法
US7439096B2 (en) * 2001-02-21 2008-10-21 Lucent Technologies Inc. Semiconductor device encapsulation
JP2003347400A (ja) * 2002-05-30 2003-12-05 Asahi Kasei Corp 半導体パターンの形成方法
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
EP1434281A3 (de) * 2002-12-26 2007-10-24 Konica Minolta Holdings, Inc. Herstellungsmethode eines Dünnfilmtransistors, Substrat und elektrische Schaltung
JP4479163B2 (ja) 2003-03-24 2010-06-09 コニカミノルタホールディングス株式会社 薄膜トランジスタ及び薄膜トランジスタの作製方法
US6869821B2 (en) * 2002-12-30 2005-03-22 Xerox Corporation Method for producing organic electronic devices on deposited dielectric materials
JP2005086144A (ja) * 2003-09-11 2005-03-31 Asahi Kasei Corp 有機導電性薄膜の形成方法、半導体装置

Also Published As

Publication number Publication date
JP5738944B2 (ja) 2015-06-24
JP2014013912A (ja) 2014-01-23
GB0424342D0 (en) 2004-12-08
TW200631208A (en) 2006-09-01
EP1807884B1 (de) 2008-07-02
US7691665B2 (en) 2010-04-06
WO2006048092A1 (en) 2006-05-11
EP1807884A1 (de) 2007-07-18
DE602005007926D1 (de) 2008-08-14
TWI388076B (zh) 2013-03-01
KR20070083921A (ko) 2007-08-24
US20070259477A1 (en) 2007-11-08
JP5390098B2 (ja) 2014-01-15
KR101332955B1 (ko) 2013-11-25
JP2008519445A (ja) 2008-06-05

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Legal Events

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